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5 results on '"load pull measurements"'

1. Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design

Author

Paolo Colantonio, Valeria Vadala, M. Marchetti, Rocco Giofre, Gianni Bosi, Giorgio Vannini, Ernesto Limiti, Antonio Raffo, Gustavo Avolio, Bosi, G, Raffo, A, Vadalà, V, Vannini, G, Avolio, G, Marchetti, M, Giofre', R, Colantonio, P, and Limiti, E

Subjects
Materials science, power amplifier, Settore ING-INF/01, semiconductor device measurement, load pull measurement, 02 engineering and technology, Electron, NO, law.invention, Harmonic analysis, Computer Science::Hardware Architecture, law, load pull measurements, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, semiconductor device measurements, Electrical impedance, business.industry, Plane (geometry), Amplifier, Load pull, Transistor, 020206 networking & telecommunications, Optoelectronics, power amplifiers, load pull measurements, power amplifiers, semiconductor device measurements, business, Microwave
Abstract

In this paper we investigate the complexity of the characterization of electron devices with microwave load-pull systems when harmonically-tuned classes of amplification are adopted. In particular, we highlight the effects of the transistor dynamic nonlinearities on the load impedances at the transistor current-generator plane.

Published
2020

2. Low frequency dithering technique for linearization of current mode class D amplifiers.

Author

Malekzadeh, Foad Arfaei, van Roermund, Arthur, and Mahmoudi, Reza

Abstract

Combination of a band-pass signal with a low frequency sinusoid signal, also known as dithering, will linearize the performance and reduce the reactive power loss of class D amplifiers. The expectations are verified through realization and measurement of a 2 watt current mode LDMOS class D amplifier operating at 2.014 GHz. The drain efficiency is enhanced from 55 to 59 percent, while giving ACPR levels below −33dBc for first WCDMA adjacent channel. [ABSTRACT FROM PUBLISHER]

Published
2012
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3. Deep Submicron CMOS for Millimeter Wave Power Applications.

Author

Ferndahl, M., Nemati, H., Parvais, B., Zirath, H., and Decoutere, S.

Abstract

This letter gives an early assessment of deep submicron planar bulk CMOS devices for millimeter wave power amplifier (PA) applications. Using load pull measurements, a record high power density of 100 mW/mm and a transducer gain of 7 dB at 35 GHz were achieved for a 40 nm physical gate length CMOS device with a total gate width of 192 mum. Furthermore a peak PAE of 33% was reached. This shows that 40 nm gate length CMOS is feasible for medium PAs in the millimeter wave region. [ABSTRACT FROM PUBLISHER]

Published
2008
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4. Accurate active device characterization for a 60GHz 65nm-CMOS Power Amplifier realization

Author

Robert Plana, Didier Belot, Eric Kerherve, Sofiane Aloui, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse 1 Capitole (UT1)-Université Toulouse - Jean Jaurès (UT2J), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
Engineering, business.industry, Amplifier, CMOS, 020208 electrical & electronic engineering, Transistor, Load pull, Electrical engineering, millimeter wave power amplifiers, 020206 networking & telecommunications, Biasing, 02 engineering and technology, 7. Clean energy, Die (integrated circuit), Power (physics), law.invention, law, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Power semiconductor device, 0GHz, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Load pull measurements
Abstract

International audience; A fully integrated Power Amplifier (PA) is fabricated for the 60GHz Wireless Personal Area Network (WPAN). It is based on the 65nm CMOS technology from STMicroelectronics. The PA is matched without serial transmission lines (T-Lines) to reach good performances and low die area. S-parameters and load pull measurement results are demonstrated and compared with electromagnetic simulations for the power transistor. The PA is optimized to deliver the maximum saturated output power (P_sat) under class A biasing. The PA offers a P_sat of 8.3dBm, an Output Compression Point OCP1 of 6.3dBm and a gain of 6.7dB. The die area is 0.29mm^2 with pads.

Published
2010

5. Effect of CF4/O2 plasma damage on AlGaN/GaN HEMTs

Author

Chini, Alessandro, Peroni, M., Romanini, P., Lanzieri, C., Teppati, V., Camarchia, V., Passaseo, A., and Giovanni Verzellesi

Subjects
nitride passivation, pulsed measurements, load pull measurements, dry etch damage, Gallium nitride, high electron mobility transistors, RF power

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