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Intelligent ion gels, which possess highly tunable mechanical, electrical, and stimulus‐responsive properties, have emerged as powerful candidates in the field of artificial intelligence, telemedicine, and health monitoring. To enrich the functionality of ion gels, it is critical to explore the link between the structure and function of ion gels. In this review, we provide an overview of the synthesis path and functional derivatives of ion gels. The conformational relationships of ion gels have been discussed, such as the effect of structure on electrical conductivity as well as sensing properties. From the perspective of stimulus response, the role of ion gels in areas such as bionic haptics, neural devices, artificial muscles, and intelligent displays has also been explored. It is possible that smart ion gels will open up a new horizon in the upcoming smart era, especially after the current challenges are resolved. [ABSTRACT FROM AUTHOR]

Abstract Intelligent ion gels, which possess highly tunable mechanical, electrical, and stimulus‐responsive properties, have emerged as powerful candidates in the field of artificial intelligence, telemedicine, and health monitoring. To enrich the functionality of ion gels, it is critical to explore the link between the structure and function of ion gels. In this review, we provide an overview of the synthesis path and functional derivatives of ion gels. The conformational relationships of ion gels have been discussed, such as the effect of structure on electrical conductivity as well as sensing properties. From the perspective of stimulus response, the role of ion gels in areas such as bionic haptics, neural devices, artificial muscles, and intelligent displays has also been explored. It is possible that smart ion gels will open up a new horizon in the upcoming smart era, especially after the current challenges are resolved.

Inorganic perovskite‐based memory devices have attracted tremendous attention due to their higher level of stability, more feasible synthesis conditions and better performance, as compared to organic–inorganic hybrid perovskite‐based devices. However, better film morphology is an essential issue for the performance of these devices. Here, the all‐inorganic halide perovskite cesium lead bromide (CsPbBr3) films are successfully fabricated via a unique solution processable deposition method at ambient conditions. These films possess satisfactory surface morphology with high crystallinity. These are utilized for reproducible resistive switching layers in the gold/CsPbBr3/indium tin oxide/Glass memory applications. A series of resistive switching layers (i.e., CsPbBr3) with varied thicknesses in the range of 200–500 nm are precisely tailored. The resistive switching responses and retention properties of CsPbBr3 based‐memory devices exhibit long‐term retention (exceeding 10000 s), high on/off ratio (up to 10000), low power consumption (set voltage at 0.25V), and good reproducibility. A model for the formation of filaments in the CsPbBr3 layer is proposed to describe the resistive switching mechanism. Furthermore, the devices exhibit excellent transient behavior, which is beneficial for the security of data storage. These characteristics reveal that cesium lead halide based memristor is promising to be utilized as the next‐generation smart memory device. [ABSTRACT FROM AUTHOR]

Motivated by the phenomena in intelligent electronics supply chains, we study capacity/output decision-making in a supply chain with limited capacity. Based on game theory and constrained extreme value theory, we build a three-stage game model, characterize the corresponding equilibrium and the profit division amongst the supply chain. We also conduct sensitivity analysis to see the effect of the parameters. We find that the supplier (also as a competitor to the buyer) may leverage the limited capacity to push the buyer out of the market, while an additional buying option does not necessarily neutralize the supply shortage threat for the buyer. Our conclusions can provide meaningful managerial insights with respect to the quantity competition in intelligent electronics supply chains. [ABSTRACT FROM AUTHOR]