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Featured Application: High-efficiency and fast power switches with low-latency driver stages have been demonstrated using GaN HEMTs on Si. Through this monolithic integration technology, high-voltage DC-DC converters can achieve high conversion efficiency at high switching frequencies. This paper presents a novel integrated half-bridge driver architecture using GaN-on-Si process for high-speed and high-voltage DC-DC converters. The entire circuit includes only enhancement mode (E-mode) and depletion-mode (D-mode) GaN transistors. The high-side driver circuit adopts the E-stacked E/D-mode (EED) architecture, which can directly drive the gate of the high-side transistor with a low-voltage signal without using an additional level shifter, which simplifies the design and reduces propagation delay. In addition, the low-side power transistor is driven by stacking two D/E-mode devices. This architecture separates the high-side pulse from the low-side drive signal to prevent false triggering of the low-side driver. The designed fully integrated GaN driver can output a high-voltage pulse wave with an operating frequency greater than 1 MHz when the input voltage is greater than 200 V. The rise and fall times of the high-voltage pulse wave operating at a peak voltage of 200 V are 54.4 ns and 57.6 ns, respectively. The experimental results show that the circuit can effectively drive the half-bridge circuit and be applied to a buck converter. The designed buck converter can deliver up to 20.5 W of output power, and the maximum efficiency achieves 90.7%. [ABSTRACT FROM AUTHOR]

The Metacapacitors project aims to improve efficiency, functionality and form factor of offline power converters suitable for LED solid-state lighting, with a view to developing an attractive technology platform for load management and power conversion across a broad range of applications. Based on integrated switched-capacitor (SC) topologies, the project adopts an integrated approach from materials to devices to circuits. We designed capacitors based on high-κ dielectric nanocrystals, that can be prepared using high-throughput microfabrication/ nanotechnology techniques, ink deposition and multilayering. The capacitor dielectric, a nanocomposite composed of (Ba, Sr)TiO3 nanocrystals in polyfurfuryl alcohol (BST/PFA, κ > 20, 100Hz-1 MHz, loss < 0.01, 20 kHz), targets a high volumetric capacitance density and ripple current capability. The Dielectric is demonstrated to function in a finished capacitor >1000 h at 125°C. The capacitors were board integrated with a custom hybrid-switched-capacitor-resonant dc-dc converter IC. The converter integrates a balanced SC front-end with a series resonant tank, enabling nearly lossless current regulation and tranformerless galvanic isolation. The converter IC can be stacked in the voltage domain to interface a range of inputs. The tested driver delivers about 15 Wat 470 mA to a string of 12 LEDs with 90% peak efficiency.

This article presents a power converter topology with integrated driving and charging capability of switched reluctance motor (SRM) drive for electric vehicle (EV) application. In the driving mode, the bus voltage can be adjusted flexibly by the front-end buck converter, which meets the requirements of the speed open-loop and closed-loop control. Besides, higher voltage demagnetization can be achieved by connecting the upper freewheeling diodes of the asymmetric half-bridge converter to the battery bank, thus can accelerate the demagnetization process, extend the dwell angle, and enhance the output of the motor. In battery charging mode, a bridgeless rectifier converter is constructed by utilizing two-phase windings of the SRM and the existing power devices of integrated power converter, without additional inductors and charging units. The battery charging and power factor correction control can be realized by closed-loop control of charging current. Detailed analysis and experiments on a 1 kW 12/8 structure prototype SRM validate the effectiveness of the proposed technologies. [ABSTRACT FROM AUTHOR]

This paper presents a novel integrated half-bridge driver architecture using GaN-on-Si process for high-speed and high-voltage DC-DC converters. The entire circuit includes only enhancement mode (E-mode) and depletion-mode (D-mode) GaN transistors. The high-side driver circuit adopts the E-stacked E/D-mode (EED) architecture, which can directly drive the gate of the high-side transistor with a low-voltage signal without using an additional level shifter, which simplifies the design and reduces propagation delay. In addition, the low-side power transistor is driven by stacking two D/E-mode devices. This architecture separates the high-side pulse from the low-side drive signal to prevent false triggering of the low-side driver. The designed fully integrated GaN driver can output a high-voltage pulse wave with an operating frequency greater than 1 MHz when the input voltage is greater than 200 V. The rise and fall times of the high-voltage pulse wave operating at a peak voltage of 200 V are 54.4 ns and 57.6 ns, respectively. The experimental results show that the circuit can effectively drive the half-bridge circuit and be applied to a buck converter. The designed buck converter can deliver up to 20.5 W of output power, and the maximum efficiency achieves 90.7%.

With the advantages of less carbon dioxide emissions and high fuel efficiency, plug-in hybrid electrical vehicle (PHEV) is an attractive means of transportation. This article presents an electrified powertrain for PHEV containing switched reluctance generator (SRG), switched reluctance motor (SRM), and integrated power converters, which could achieve various driving and flexible on-board charging functions. The operation states of SRG and SRM with the integrated topology is analyzed. Five driving modes for PHEV are implemented and can be smoothly switched by controlling the front-end converter according to the load conditions. For the PHEV charging mode, a single-phase ac–dc rectifier is constituted by the windings and power converter of SRG with the capability of input power factor correction. The traction and auxiliary batteries chargers are formed by the windings and power converter of SRM. Three charging modes also are achieved and no complex control strategies are required to avoid the rotation of rotors. The three-phase 12/8 poles SRG and SRM experimental platform are built. The experiments are carried out to verify the effectiveness of proposed integrated powertrain and the corresponding control schemes. [ABSTRACT FROM AUTHOR]

This paper presents an analytical and experimental comparison of a two-phase buck converter and a two-phase, series capacitor buck converter. The limitations of a conventional buck converter in high-current (10 A or more), and high-frequency (HF, 3–30 MHz) point-of-load voltage regulators with large voltage conversion ratios (10-to-1) are highlighted. The series capacitor buck converter exhibits desirable characteristics at HF, including lower switching loss, less inductor current ripple, automatic phase current balancing, duty ratio extension, and soft charging of the energy transfer capacitor. Analysis of the topologies indicates that switching loss and inductor core loss can dominate at HF. Results from side-by-side 12 V input, 1.2 V output hardware prototypes demonstrate that the series capacitor buck converter has up to 12 percentage points higher efficiency at 3 MHz and reduces power loss by up to 33% at full load (10 A). Some guidelines for inductor selection are provided, and a switch stress comparison reveals that the maximum converter switch stress is reduced by 30%. [ABSTRACT FROM AUTHOR]

The PowerChip research program is developing technologies to radically improve the size, integration, and performance of power electronics operating at up to grid-scale voltages (e.g., up to 200 V) and low-to-moderate power levels (e.g., up to 50 W) and demonstrating the technologies in a high-efficiency light-emitting diode driver, as an example application. This paper presents an overview of the program and of the progress toward meeting the program goals. Key program aspects and progress in advanced nitride power devices and device reliability, integrated high-frequency magnetics and magnetic materials, and high-frequency converter architectures are summarized. [ABSTRACT FROM AUTHOR]

Integration of efficient power converters requires technology for efficient, high-power on-chip inductors and transformers. Increases in switching frequency, facilitated by advances in circuit designs and silicon or wide-bandgap semiconductors, can enable miniaturization, but only if the magnetics technology works well at the higher frequencies. Technologies, geometries, and scaling of air-core and magnetic-core inductors and transformers are examined, and their potential for integration is discussed. Air-core inductors can use simpler fabrication, and increasing frequency can always be used to decrease their size, but magnetic cores can decrease the required thickness without requiring as high a frequency. [ABSTRACT FROM AUTHOR]

In this paper we present an asynchronous finite-state machine digital controller co-integrated with an on-chip non-inverting buck-boost power converter with dynamic signal-tracking capabilities. The mostly-digital controller functionally implements a non-PWM zone-wise control law through asynchronous circuitry, thus exhibiting self-timed minimum latency and ultra low power operation due to gate switching activity. Experimental results on a 0.35 μm CMOS technology demonstrate an efficiency up to 80 % with a switching frequency of 2.86 MHz. [ABSTRACT FROM AUTHOR]