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3 results on '"infrared nanocrystal"'

1. Field effect transistor and photo transistor of narrow band gap nanocrystal arrays using ionic glasses

Author

Nicolas Goubet, Ulrich Nguétchuissi Noumbé, Yoann Prado, Charlie Gréboval, Audrey Chu, Emmanuel Lhuillier, Abdelkarim Ouerghi, Bertille Martinez, Sandrine Ithurria, Junling Qu, Hervé Aubin, Julien Ramade, Clément Livache, Jean-Francois Dayen, Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), Université de Strasbourg (UNISTRA)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), De la Molécule aux Nanos-objets : Réactivité, Interactions et Spectroscopies (MONARIS), Institut de Chimie du CNRS (INC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) (LPEM), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), ANR-18-CE30-0023,IPER-Nano2,Nanocristaux de perovskite inorganique pour la nanophotonique(2018), ANR-11-IDEX-0004,SUPER,Sorbonne Universités à Paris pour l'Enseignement et la Recherche(2011), ANR-15-CE09-0014,NanoDoSe,Dopage de Nanocristaux Semiconducteurs par chimie douce(2015), European Project: 756225,blackQD, Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, and Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, infrared nanocrystal, Bioengineering, 02 engineering and technology, Photodetection, Dielectric, Capacitance, HgTe, law.invention, field effect transistor, Operating temperature, law, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Photocurrent, business.industry, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Photodiode, Nanocrystal, ionic glass, infrared, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, solid state gating, LaF3, ionic glasses, HgTe nanocrystal
Abstract

The gating of nanocrystal films is currently driven by two approaches: either the use of a dielectric such as SiO2 or the use of electrolyte. SiO2 allows fast bias sweeping over a broad range of temperatures but requires a large operating bias. Electrolytes, thanks to large capacitances, lead to the significant reduction of operating bias but are limited to slow and quasi-room-temperature operation. None of these operating conditions are optimal for narrow-band-gap nanocrystal-based phototransistors, for which the necessary large-capacitance gate has to be combined with low-temperature operation. Here, we explore the use of a LaF3 ionic glass as a high-capacitance gating alternative. We demonstrate for the first time the use of such ionic glasses to gate thin films made of HgTe and PbS nanocrystals. This gating strategy allows operation in the 180 to 300 K range of temperatures with capacitance as high as 1 μF·cm-2. We unveil the unique property of ionic glass gate to enable the unprecedented tunability of both magnitude and dynamics of the photocurrent thanks to high charge-doping capability within an operating temperature window relevant for infrared photodetection. We demonstrate that by carefully choosing the operating gate bias, the signal-to-noise ratio can be improved by a factor of 100 and the time response accelerated by a factor of 6. Moreover, the good transparency of LaF3 substrate allows back-side illumination in the infrared range, which is highly valuable for the design of phototransistors.

Published
2019

2. Recent Progresses in Mid Infrared Nanocrystal Optoelectronics

Author

Philippe Guyot-Sionnest, Emmanuel Lhuillier, Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), James Franck Institute, University of Chicago, ANR-11-IDEX-0004,SUPER,Sorbonne Universités à Paris pour l'Enseignement et la Recherche(2011), and ANR-11-IDEX-0004,SUPER(2011)

Subjects
Materials science, Infrared, infrared nanocrystal, Nanotechnology, 02 engineering and technology, Photodetection, 010402 general chemistry, intraband, 01 natural sciences, interband, mercury chalcogenides, Electrical and Electronic Engineering, Thin film, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Absorption (electromagnetic radiation), Plasmon, business.industry, Doping, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Nanocrystal, Quantum dot, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; Over the past few years, colloidal nanoparticles have started to be investigated for their optical properties in the mid-infrared, past 3 microns. Research on detector application has led to background limited detection and fast video imaging at 5 microns. With further development, one could imagine that these new materials could vastly reduce the costs of infrared technology and this would lead to a trove of new applications for infrared imaging into our daily lives. This article reviews the progress regarding the optical, transport and photodetection properties of thin film based on these materials, and the three different ways by which infrared resonances have been realized with colloidal nanoparticles: interband absorption with small gap semiconductor quantum dots, intraband absorption in lightly doped quantum dots, and plasmonic resonances in heavily doped nanocrystals.

Published
2017
Full Text
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3. Field-Effect Transistor and Photo-Transistor of Narrow-Band-Gap Nanocrystal Arrays Using Ionic Glasses.

Author

Gréboval C, Noumbe U, Goubet N, Livache C, Ramade J, Qu J, Chu A, Martinez B, Prado Y, Ithurria S, Ouerghi A, Aubin H, Dayen JF, and Lhuillier E

Abstract

The gating of nanocrystal films is currently driven by two approaches: either the use of a dielectric such as SiO 2 or the use of electrolyte. SiO 2 allows fast bias sweeping over a broad range of temperatures but requires a large operating bias. Electrolytes, thanks to large capacitances, lead to the significant reduction of operating bias but are limited to slow and quasi-room-temperature operation. None of these operating conditions are optimal for narrow-band-gap nanocrystal-based phototransistors, for which the necessary large-capacitance gate has to be combined with low-temperature operation. Here, we explore the use of a LaF 3 ionic glass as a high-capacitance gating alternative. We demonstrate for the first time the use of such ionic glasses to gate thin films made of HgTe and PbS nanocrystals. This gating strategy allows operation in the 180 to 300 K range of temperatures with capacitance as high as 1 μF·cm -2 . We unveil the unique property of ionic glass gate to enable the unprecedented tunability of both magnitude and dynamics of the photocurrent thanks to high charge-doping capability within an operating temperature window relevant for infrared photodetection. We demonstrate that by carefully choosing the operating gate bias, the signal-to-noise ratio can be improved by a factor of 100 and the time response accelerated by a factor of 6. Moreover, the good transparency of LaF 3 substrate allows back-side illumination in the infrared range, which is highly valuable for the design of phototransistors.

Published
2019
Full Text
View/download PDF

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