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Indium oxide and doped indium oxide films were successfully grown utilizing a plasma-enhanced atomic layer deposition supercycling process, which was found to be an effective means of controlling films' composition and, hence, their properties. Using trimethylindium and oxygen plasma as an indium precursor and a co-reactant, respectively, a growth rate of approximately 1.26 Å per cycle was obtained based on thickness measurements by spectroscopic ellipsometry. Three distinct dopants, Sn, Ti, and Mo, have been incorporated into indium oxide. The effects of dopant type, cycle ratio of dopant to indium oxide, and thermal annealing on the structural, electrical, and optical properties were studied. The deposited films consisted of polycrystalline columnar grains perpendicular to the substrate with a cubic bixbyite structure and [111] as the favored growth direction. Thermal annealing had a significant effect on the film characteristics, resulting in an order of magnitude reduction in resistivity, as well as changes in transmittance in the near-infrared (NIR) and ultraviolet (UV) regions. The lowest resistivities achieved for Sn-doped, Ti-doped, and Mo-doped were 2.8 × 10−4, 4.2 × 10−4, and 6.1 × 10−4 Ω cm, respectively. The changes are attributed to dopant activation, as the UV shift between the differently doped samples may be linked to the Moss–Burstein effect and the NIR behavior can be explained by an increase in charge carrier density, as predicted by the Drude model. The three dopants primarily provide a trade-off between electrical resistance and NIR transparency. Mo-doped films exhibited the highest near-infrared transparency, while Sn-doped films offered the lowest sheet resistance. [ABSTRACT FROM AUTHOR]

Gallium nitride (GaN)- based lasers are extensively employed in display, lighting, and communication applications due to their visible laser emission. Despite notable advancements in their performance and reliability, sustained device functionality over extended periods remains a challenge. Among the diverse mechanisms contributing to degradation, the deterioration of quantum wells poses a persistent obstacle. In this study, we investigated the atomic-level degradation of quantum wells within GaN-based laser diodes utilizing atom probe microscopy. Our analysis revealed a substantial increase in indium fluctuation, accompanied by the formation of indium protrusions at the quantum well interfaces, which provides a credible explanation for the observed increase in FWHM (full width at half maximum) of the spontaneous spectra of lasers following prolonged operation. Additionally, magnesium analysis yielded no evidence of diffusion into the quantum well region. Combined with prior studies, we attribute the degradation of quantum wells primarily to the formation of indium-related non-radiative recombination centers. [ABSTRACT FROM AUTHOR]

InN holds great promise for a wide range of applications, including broadband optical devices, high-frequency electronic devices, and serving as a substrate for highly sensitive gas detectors and efficient catalysts. Nevertheless, production of high-quality InN thin films through epitaxy has remained a significant challenge. This is primarily due to complexities arising from the low dissociation temperature and the high N2 equilibrium pressure of InN, which lead to formation of numerous nitrogen vacancies and a propensity to generate indium metal nanoparticles. Efficacy of the indium bilayer pre-deposition method for InN film growth has been established in prior studies. In this work, we introduce a specialized hydrogen insertion method to further enhance nitridation of the indium bilayer. The corresponding kinetic mechanism has been demonstrated through theoretical simulations and practical epitaxy experiments, leading to the development of an optimized hydrogen insertion process. This research represents a substantial improvement over existing InN epitaxial methods that involve control of the indium bilayer and introduces a novel mechanism for enhancing InN heteroepitaxy. [ABSTRACT FROM AUTHOR]

In this work, a low-profile optical transparent wideband metamaterial absorber based on radiation–absorption reciprocal theory is proposed. The top layer and bottom layer are composed of indium tin oxide–polyethylene terephthalate films, and the middle layer is a transparent substrate polymethyl methacrylate. The method of transparent wideband absorption using reciprocal theory is proposed to guide the design. Based on characteristic mode analysis and calculated equivalent aperture efficiency, the absorber consisting of composite resonators is analyzed and designed. The equivalent circuit model and surface current distributions are studied to verify the design. The numerical results show that high absorption of greater than 90% in the frequency range of 5.7–16.4 GHz is obtained. A wideband absorption rate of greater than 80% at a 60° incident angle under TM polarization and an absorption rate of greater than 65% at a 60° incident angle under TE polarization are obtained. The proposed design has the advantages of broadband absorption, polarization insensitivity, light transmittance of more than 70%, and compact structure, which can be applied to special scenes that require optical transparency, such as anechoic chamber glass and cockpit glass. [ABSTRACT FROM AUTHOR]

We investigate the sub-bandgap optical absorption (SOA) in 300-nm-thick Al1−xInxN alloys used in cladding layers of edge-emitting laser diodes and distributed Bragg reflectors of vertical-cavity surface-emitting lasers. Al1−xInxN alloys, with indium content x ranging from 0.114 to 0.185, were grown by metal-organic chemical vapor deposition on a c-plane GaN/sapphire template. SOAs on 300-nm-thick thin films were characterized using photothermal deflection spectroscopy (PDS). Thermal emission, such as nonradiative recombination with phonon emission, is the dominant energy relaxation process occurring after SOA in Al1−xInxN alloys. The absorption coefficient of the SOA was estimated to be 0.6–7.0 × 103 cm−1 in these samples by combining PDS and spectroscopic ellipsometry. The drastic increase in the SOA, when x exceeded the lattice-matched composition of the GaN/sapphire template, indicates that impurities, vacancy-type defects, and their complexes with increasing x are possible candidates that result in SOA in Al1−xInxN alloys. [ABSTRACT FROM AUTHOR]

This research explores the gas-sensing characteristics of undoped SnO 2 , as well as indium (In:SnO 2) and titanium (Ti:SnO 2) doped SnO 2 nanostructures, which were synthesized using a homogeneous precipitation technique. Structural analyses indicate the presence of a tetragonal rutile phase with a preferred orientation along the (110) plane, with both doped samples showing shifts towards higher angles. Raman spectroscopy confirms the vibrational modes associated with SnO 2 in both the pure and In: SnO 2 samples, while the Ti: SnO 2 sample reveals vibrational modes corresponding to both SnO 2 and TiO 2. Fourier-transform infrared (FTIR) spectroscopy indicates shifts in the O-Sn-O and Sn-O bonds in the doped samples, suggesting the effects of doping. X-ray photoelectron spectroscopy (XPS) results imply a combination of SnO and SnO 2 phases in the undoped SnO 2 , while In: SnO 2 samples display In-O bonding and the presence of metallic indium, and Ti: SnO 2 shows Ti-O bonding. Scanning electron microscopy (SEM) images show agglomerated particles in the pure and In-doped samples, whereas the Ti-doped samples exhibit a flake-like structure. Transmission electron microscopy (TEM) analysis verifies the integration of dopants into the SnO 2 crystal lattice, with average crystallite sizes measured at 44.46 nm for undoped, 34.06 nm for In: SnO 2 , and 42.63 nm for Ti: SnO 2. Gas-sensing experiments for CO 2 detection reveal that In: SnO 2 demonstrates the most significant sensing response. These results underscore the impact of doping on the structural, morphological, and gas-sensing attributes of SnO 2 nanostructures, offering important insights for the advancement of efficient carbon dioxide sensors. [ABSTRACT FROM AUTHOR]

Abstract\nKEY POINTSSphalerite is the main Zn ore mineral and is the primary source of Cd, Ge and In, and a minor source of Ga. Owing to a shift from fossil fuel to renewable energy sources, these four minor elements have progressively become more important to the economy. Despite this, resources of Cd, Ga, Ge and In are rarely reported, as these metals are not considered material to the economics of resource development. As a result, the distribution of these elements between and within deposits is poorly known, and national and international resources are largely unreported. Following previous studies, we have compiled analytical data for Cd, Ga, Ge and In from sphalerite and used global and local ore geochemical datasets to assess geochemical controls on the concentration of these elements in Zn deposits. Our results are similar to those of previous studies and suggest that lower-temperature deposits are enriched in Ge, whereas higher-temperature deposits are enriched in In. However, modelling of hydrothermal geochemistry indicates other factors are important in concentrating these metals. In particular, the oxidation state of the fluid (oxidised vs reduced) and the depositional mechanisms also have a strong influence in Ga, Ge and In enrichment. Reduction of oxidised fluids is particularly effective in depositing Ge, whereas cooling very effectively deposits In and, in some cases, Ge. As a consequence, some higher-temperature deposits (e.g. high sulfidation epithermal and some volcanic-hosted massive sulfide) can be Ge-enriched, and some lower-temperature deposits (e.g. siliciclastic–carbonate shale-hosted deposits) can be enriched in In. Using the existing ore geochemical data and calculated characteristic Ge/Zn and In/Zn ratios, indicative estimates have been made on the endowment of Australian Zn deposits of Ge and In. These estimates highlight the potential of the North Australian Zinc Belt for Ge and for VHMS deposits for In. Although there is a large amount of uncertainty in the estimates, they are indicative of the potential for these metals in Australia.The efficacy of metal leaching from regional alteration zones depends on the temperature of alteration and the alteration minerals. For example, low-temperature (<200 °C) chlorite-rich zones tend to sequester zinc, whereas zinc is leached from higher-temperature, chlorite-rich zones.The concentrations of Ga, Ge and In in sphalerite and zinc ores depend not only on temperature but also on the redox state of the ore fluids and sphalerite depositional mechanisms.The endowment of Ge, In and other critical minerals in zinc deposits can be/has been estimated using typical (median) ratios of these elements to zinc for individual deposits or deposit types and zinc endowments of individual deposits. [ABSTRACT FROM AUTHOR]

The urgent necessity to remove dangerous lead from the commonly used metal halide perovskite solar cells (PSCs) requires the exploration of effective and reliable lead-free perovskite substitutes. In this study, we conduct a performance analysis of Sn-based PSCs incorporating a low-temperature indium sulfide electron transporting layer (ETL) and use SCAPS-1D simulation to evaluate the PSC performance. We investigate multiple parameters that determine the PSC performance, such as the thickness and defect density of the Sn-based perovskite layer, as well as the defect density at the ETL/perovskite interface. The optimization procedure produced outstanding outcomes with maximum power conversion efficiency (PCE) of 21.57%, 24.03%, and 21.93% for CsSnI3, FASnI3, and MASnI3, respectively. The proposed device structure and parameters could potentially advance the experimental work and provide a new approach for optimizing the construction of Sn-based PSCs, thereby opening up new possibilities for future study in this field. [ABSTRACT FROM AUTHOR]

Herein, neutral mononuclear indium(III) complexes (In-1–In-3) containing 2,6-di(1H-pyrrol-2-yl)pyridine and substituted dipyridylpyrrole pincer ligand were employed as photosensitizers (PS) in photocatalytic CO2 reduction. In-2 exhibits good photo-activity and selectivity, which is superior to the classic PS Ru(bpy)32+. The amount of CO generation is 28.4 μmol with a CO selectivity of 93% when using In-2 as a PS and CoPc as a catalyst in CH3CN media. [ABSTRACT FROM AUTHOR]

Indium–salen complexes with electron‐donating 9,9‐dimethyl‐9,10‐dihydroacridine (DMAC) groups at positions 4 (DMACIn1) and 4 and 6 (DMACIn2) were synthesized and characterized to investigate the effect of the substituents number and structural rigidity on photophysical properties. The single crystal structure of DMACIn1 revealed highly twisted arrays (83–89°) between the DMAC groups and salen moieties and a nearly square‐pyramidal geometry around the indium center. Both complexes exhibited green fluorescence in toluene at 298 K and in rigid states (in toluene at 77 K and in a film), which originates from intramolecular charge transfer (ICT) transitions. The absolute photoluminescence quantum yields (PLQYs) of DMACIn1 and DMACIn2 were low in solution but high in the rigid states. The film‐state PLQY of DMACIn2 (59.5%) was more than five‐fold higher than that of DMACIn1 (11.1%). A similar result was observed in toluene at 77 K. These findings were rationalized in terms of the beneficial effects of structural rigidity and higher number of DMAC donors on ICT‐based radiative decay. The experimental results agreed with those of computational studies. [ABSTRACT FROM AUTHOR]

The rapid and skillful detection of toxic gases is a crucial requirement for the advancement of gas sensors. In this study, we fabricated undoped and In-doped (1 %, 3 %, and 5 % by weight) ZnO films using a two-step modified SILAR deposition technique. The ethanol gas sensing properties of both undoped and In-doped ZnO films were examined across a range of operating temperatures (from room temperature, 27 °C–200 °C) and concentrations (1 ppm–50 ppm). Of all the films, those doped with 5 % Indium exhibited the most stable, reproducible, and highest response, achieving 86.27 % at 50 ppm ethanol at an operating temperature of 100 °C. Compared to the undoped ZnO films, all Indium-doped ZnO films demonstrated significantly shorter response times (17 s) and recovery times (19 s). The response of all the deposited films to various gases such as acetone, methanol, toluene, xylene, and formaldehyde was lower than their response to ethanol. The mechanism behind the enhanced sensing characteristics of the Indium-doped ZnO films is explored. Additionally, the impact of humidity on sensor performance was investigated. This study reveals that 5 % In-doped ZnO films hold great potential as materials for ethanol gas sensing applications. [ABSTRACT FROM AUTHOR]

β‐Ga2O3 is an emerging ultra‐wide bandgap semiconductor with great promise for power electronics and optoelectronics. Alloys in the In2O3‐Ga2O3 system are interesting for optoelectronic applications, particularly where bandgap tuning is desirable. Herein, β‐(InxGa1–x)2O3 alloys with target compositions x = 0.025 or 0.10 are grown from the melt using the Czochralski and vertical gradient freeze techniques. Growth with 10 mol% In yields only small, needle‐like crystals, while 2.5 mol% In allows growth of centimeter‐sized single crystals. A substantial degree of indium segregation is unveiled by spatial measurements of lattice parameters and the bandgap. The bandgap decreases by a maximum of 0.28 eV in the case of the highest In content crystals. Z‐contrast transmission electron microscopy confirms a solely octahedral coordination of In in the β‐Ga2O3 lattice. With indium concentrations higher than 2.5 mol%, samples contain micron‐scale voids that impart a dark coloration. All measured crystals are electrically conductive, with carrier concentrations varying 1016–1017 cm−3 depending upon the location of the sample in the growth. Lastly, a unique luminescence with unknown origin centered around 2.0 eV is revealed by photoluminescence spectroscopy. [ABSTRACT FROM AUTHOR]

To investigate nonradiative recombination processes in indium gallium nitride (InGaN)‐based red light‐emitting diodes (LEDs), an InGaN‐based red LED with a hybrid quantum well (QW) structure consisting of red and blue single quantum wells (SQWs) is characterized by micro‐photoluminescence (μ‐PL) spectroscopy. The μ‐PL mapping of the red emission reveals numerous dark spots with various sizes and contrasts. Not only the red and blue (from a blue SQW) but green emission bands are observed at some red dark spots, suggesting that indium (In) segregation is one of the causes of nonradiative recombination in the red emission. Comparing the blue and green emission images to the red emission image reveals that the dark spots in the intensity map of the red emission can be classified into four types. Through this correlative analysis, the red dark spots associated with the dark areas in the intensity map of the blue emission are attributed to the major nonradiative recombination centers in the red emission. [ABSTRACT FROM AUTHOR]

This article is aimed at understanding of the complex design of metalorganic chemical vapour deposition ‐grown InGaN‐based red light‐emitting diode (LED) structure. The contribution of different elements of red LED structure to the stress distribution and threading dislocation density (TDD) evolution is theoretically investigated. For this purpose a self‐consistent modeling of the structure growth process is used, taking into account stress‐modulated indium incorporation, mismatch stress relaxation by threading dislocations and V‐pits, and nucleation of new threading dislocations. The simulation results, consisting of composition, stress, and TDD profiles, are then utilized for modeling of device operation, which allows to analyze contribution of different elements to the heterostructure operation. [ABSTRACT FROM AUTHOR]

Molecular beam epitaxy is applied for the GaN/InGaN growth under In‐bilayer stabilized conditions, which require substrate temperatures above 580 °C for sufficient indium desorption. Under these conditions the indium content is limited to xIn≤0.3$x_{\text{In}} \leq 0.3$, as determined by a novel reflection high energy electron diffraction technique, which is based on indium adsorption and subsequent consumption at varying gallium flux. As‐grown structures show degraded surfaces after indium desorption. This effect is eliminated by applying excess gallium before and after InGaN growth, which results in morphologies and dislocation densities comparable to GaN/AlGaN structures. [ABSTRACT FROM AUTHOR]

We successfully decorated metallic 1T phase WS 2 (1T-WS 2) on the surface of ZnIn 2 S 4 and investigated the synergistic effect of 1T-WS 2 on ZnIn 2 S 4. Under simulated solar irradiation, the optimal hydrogen production rate of 1T-WS 2 /ZnIn 2 S 4 reaches 30.90 mmol/h g−1, which is 3.38 times higher than that of single ZnIn 2 S 4. [Display omitted] Improving the separation efficiency of carriers is an important part of enhancing photocatalytic activity. Herein, we successfully decorated metallic 1T phase tungsten disulfide (1T-WS 2) on the surface of zinc indium sulfide (ZnIn 2 S 4) and investigated the synergistic effect of 1T-WS 2 on ZnIn 2 S 4. The characterization results show that 1T-WS 2 improves the light absorption capacity and utilization efficiency, increases the catalytic active site, improves the photogenerated charge separation efficiency, and optimizes the reduction potential of ZnIn 2 S 4. Theoretical calculations show that compared with ZnIn 2 S 4 , 1T-WS 2 /ZnIn 2 S 4 has a smaller adsorption Gibbs free energy of the intermediate state H*, which is conducive to the catalytic reaction. Under simulated solar irradiation, the hydrogen (H 2) production rate of 1T-WS 2 /ZnIn 2 S 4 with a loading of 12 wt% reaches 30.90 mmol h−1 g−1, which is 3.38 times higher than that of single ZnIn 2 S 4 (9.13 mmol h−1 g−1). In addition, the apparent quantum efficiency of 1T-WS 2 /ZnIn 2 S 4 with a loading of 12 wt% reaches 21.14 % under monochromatic light at a wavelength of λ = 370 nm. This work analyzes the light absorption and carrier separation to the catalytic site, and elucidates the mechanism for the enhancement of the photocatalytic hydrogen production performance. [ABSTRACT FROM AUTHOR]

Though indium has been removed from the fifth list (2023) of critical raw materials for the European Union list of critical metals, its recovery is still of paramount importance due to its wide use in a series of high-tech industries. As its recovery is closely associated with zinc mining, the recycling of In-bearing wastes is also of interest, for both profitable and environmental reasons. With unit operations (in hydrometallurgy and pyrometallurgy or extractive metallurgy) playing a key role in the recycling of indium, the present work reviewed the most recent innovations (2024) regarding the use of these operations in the recovery from this valuable metal from different solid or liquid wastes. [ABSTRACT FROM AUTHOR]

The Fe/MgAl2O4 catalysts modified with In were prepared by joint impregnation of aluminum–magnesium spinel with solutions of metal nitrate salts. Data on the adsorptive and reductive properties of the catalysts obtained by the in situ magnetic method, XPS, thermolysis, and IR spectroscopy of adsorbed CO are compared. It was established that the presence of indium in the catalyst inhibits the reduction of iron oxides to magnetite, as well as the stage of water removal from the catalysts and the decomposition of metal nitrates. It was shown by IR spectroscopy that the main adsorption sites are the structures that include Fe2+ cations. [ABSTRACT FROM AUTHOR]

Rechargeable aqueous zinc-metal batteries, considered as the possible post-lithium-ion battery technology for large-scale energy storage, face severe challenges such as dendrite growth and hydrogen evolution side reaction (HER) on Zn negative electrode. Herein, a three-dimensional Cu-In alloy interface is developed through a facile potential co-replacement route to realize uniform Zn nucleation and HER anticatalytic effect simultaneously. Both theoretical calculations and experimental results demonstrate that this bifunctional Cu-In alloy interface inherits the merits of low Zn-nucleation overpotential and high HER overpotential from individual copper and indium constituents, respectively. Moreover, the dynamical self-reconstruction during cycling leads to an HER-anticatalytic and zincophilic gradient hierarchical structure, enabling highly reversible Zn chemistry with dendrite-free Zn (002) deposition and inhibited HER. Moreover, the improved interface stability featured by negligible pH fluctuations in the diffusion layer and suppressed by-product formation is evidenced by in-situ scanning probe technology, Raman spectroscopy, and electrochemical gas chromatography. Consequently, the lifespan of the CuIn@Zn symmetric cell is extended to more than one year with a voltage hysteresis of 6 mV. Importantly, the CuIn@Zn negative electrode is also successfully coupled with high-loading iodine positive electrode to fabricate Ah-level (1.1 Ah) laminated pouch cell, which exhibits a capacity retention of 67.9% after 1700 cycles. Rechargeable aqueous Zn metal batteries are impeded by dendrite growth and the hydrogen evolution side reaction. Here, authors develop a bifunctional Cu-In alloy interface to realize uniform Zn nucleation and prevent hydrogen evolution, enabling operation of Ah-level Zn metal pouch cells. [ABSTRACT FROM AUTHOR]

Targeted theranostics heavily rely on metal isotopes conjugated to antibodies. Single‐domain antibodies, known as nanobodies, are much smaller in size without compromising specificity and affinity. The conventional way of conjugating metals to nanobodies involves non‐specific modification of amino acid residues with bifunctional chelating agents. We demonstrate that mutagenesis of a single residue in a nanobody creates a triple cysteine motif that selectively binds bismuth which is, for example, used in targeted alpha therapy. Two mutations create a quadruple cysteine mutant specific for gallium and indium used in positron emission tomography and single‐photon emission computed tomography, respectively. Labelling is quantitative within a few minutes. The metal nanobodies maintain structural integrity and stability over weeks, resist competition from endogenous metal binders like glutathione, and retain functionality. [ABSTRACT FROM AUTHOR]

Large-scale and air-stable two-dimensional metal layers intercalated at the interface between epitaxial graphene and SiC offer an appealing material for quantum technology. The atomic and electronic details, as well as the control of the intercalated metals within the interface, however, remain very limited. In this Letter, we explored ultrathin indium confined between graphene and SiC using cryogenic scanning tunneling microscopy, complemented by first-principle density functional theory. Bias-dependent imaging and tunneling spectroscopy visualize a triangular superstructure with a periodicity of 14.7 ± 3 Å and an occupied state at about −1.6 eV, indicating proof of highly crystalline indium. The scanning tunneling microscopy tip was used to manipulate the number of indium layers below graphene, allowing to identify three monatomic In layers and to tune their corresponding electronic properties with atomic precision. This further allows us to attribute the observed triangular superstructure to be solely emerging from the In trilayer, tentatively explained by the lattice mismatch induced by lattice relaxation in the topmost In layer. Our findings provide a microscopic insight into the structure and electronic properties of intercalated metals within the graphene/SiC interface and a unique possibility to manipulate them with atomic precision using the scanning probe technique. [ABSTRACT FROM AUTHOR]

Aqueous trivalent metal batteries represent a compelling candidate for energy storage due to the intriguing three‐electron transfer reaction and the distinct properties of trivalent cations. However, little research progress has been achieved with trivalent batteries due to the inappropriate redox potentials and drastic ion hydrolysis side reactions. Herein, the appealing yet underrepresented trivalent indium is selected as an advanced metal choice and the crucial effect of substrate on its plating mechanism is revealed. When copper foil is used, an indiophilic indium‐copper alloy interface can be formed in situ upon plating, exhibiting favorable binding energies and low diffusion energy barriers for indium atoms. Consequently, a planar, smooth, and dense indium metal layer is uniformly deposited on the copper substrate, leading to outstanding plating efficiency (99.8–99.9%) and an exceedingly long lifespan (6.4–7.4 months). The plated indium anode is further paired with a high‐mass‐loading Prussian blue cathode (2 mAh cm−2), and the full cell (negative/positive electrode capacity, N/P = 2.5) delivers an excellent cycling life of 1000 cycles with 72% retention. This work represents a significant advancement in the development of high‐performance trivalent metal batteries. [ABSTRACT FROM AUTHOR]

Transformations enabling the synthesis of α‐alkyl, α′‐2‐azinyl amines by addition of 2‐heteroaryl‐based nucleophiles to in situ‐generated and non‐activated alkyl‐substituted iminium ions are extremely rare. Approaches involving classical 2‐azinyl organometallics, such as the corresponding Grignard reagents, often fail to produce the desired products. Here, we report an operationally straightforward solution to this problem through the development of a multicomponent coupling process wherein a soft 2‐azinyl indium nucleophile, generated in situ from the corresponding 2‐iodo heteroarene and indium powder, adds to an iminium ion that is also formed directly in the reaction. This modular carbonyl azinylative amination (CAzA) displays a broad scope and only a metal reductant is needed to generate a reactive 2‐azinyl nucleophile. Beyond the addition to iminium ions, the 2‐azinyl addition to polyfluoromethyl ketones forms the corresponding tertiary alcohols. Together, the products of these reactions possess a high degree of functionality, are typically challenging to synthesize by other methods, and contain motifs recognized as privileged in the context of pharmaceuticals and agrochemicals. [ABSTRACT FROM AUTHOR]

Herein we report a new, practical and efficient preparation of benzofuran-3-carboxylates and naphthofuran-3-carboxylates starting from β-nitroacrylates and phenols. The reaction is promoted by indium trichloride and leads to the target compounds in good to very good yields under microwave irradiation. [ABSTRACT FROM AUTHOR]

[Display omitted] To achieve rapid preparation of hydrogels without using conventional chemical initiators, a stable suspension of eutectic gallium indium (EGaIn) liquid metal nanoparticles is explored by probe-sonicating the metal in an aqueous solution. Liquid metal suspension was sonicated to serve as a photo-initiator for acrylamide polymerization and produce hydrogels. The initiation effect comes from the fact that liquid metal suspension after sonication can produce a large number of free radicals when exposed to ultraviolet (UV) radiation, leading to initiation. The changes of liquid metal nanodroplets under UV light irradiation have been systematically investigated. Further, the liquid metal colloidal solutions were used to prepare hydrogels with the same transparency and adjustable mechanical properties as the samples initiated by commercial photo-initiators. This work shows the great application potential of liquid metal in the preparation of hydrogels and provides a new technical idea for the design of multifunctional hydrogels. [ABSTRACT FROM AUTHOR]

Crafting an inorganic semiconductor heterojunction with defect engineering and morphology modulation is a strategic approach to produce clean energy by the highly efficient light-driven splitting of water. In this paper, a novel Z-scheme sulfur-vacancy containing Zn 3 In 2 S 6 (Vs-Zn 3 In 2 S 6) nanosheets/In 2 O 3 hollow hexagonal prisms heterostructrue (Vs-ZIS6INO) was firstly constructed by an oil bath method, in which Vs-Zn 3 In 2 S 6 nanosheets grew on the surfaces of In 2 O 3 hollow hexagonal prisms to form a hollow core–shell structure. The obtained Vs-ZIS6INO heterostructrue exhibited much enhanced activity of the production of H 2 and H 2 O 2 by the light-driven water splitting. In particular, under visible light irradiation (λ > 420 nm), the rate of generation of H 2 of Vs-ZIS6INO sample containing 30 wt% Vs-Zn 3 In 2 S 6 (30Vs-ZIS6INO) could reach 3721 μmol g–1h−1, which was 87 and 6 times higher than those of Zn 3 In 2 S 6 (43 μmol g–1h−1) and Vs-Zn 3 In 2 S 6 (586 μmol g–1h−1), respectively. Meanwhile, 30Vs-ZIS6INO could exhibit the rate of H 2 O 2 production of 483 μmol g–1h−1 through the dual pathways of indirect 2e– oxygen reduction (ORR) and water oxidation (WOR) without adding any sacrifice agents, far exceeding In 2 O 3 (7 μmol g–1h−1) and Vs-Zn 3 In 2 S 6 (58 μmol g–1h−1). The excellent photocatalytic activities of H 2 and H 2 O 2 generations of Vs-ZIS6INO sample might result from the synergistic effect of the sulfur vacancy, hollow core–shell structure, and Z-scheme heterostructure, which accelerated the electron delocalization, enhanced the absorption and conversion of solar energy, reduced the carrier diffusion distance, and ensured high REDOX ability. In addition, the possible photocatalytic mechanisms for the production of H 2 and H 2 O 2 were discussed in detail. This study provided a new idea and reference for constructing the novel and efficient inorganic semiconductor heterostructures by coordinating vacancy defect and morphology design to adequately utilize water splitting for the production of clean energy. [ABSTRACT FROM AUTHOR]

Indium is considered a valuable and irreplaceable material for a variety of applications that improve the quality of human life. Due to its limited availability and the growing demand, it is mandatory to find sustainable solutions for indium recovery from end-of-life devices. The green indium patented technology SCRIPT (ITA202018000008207) focuses on recovering indium from ground LCD panels, developed through laboratory scale investigation. The process ensures high recovery efficiencies of indium (>90%), features a simple design, and fully exploits the solid residue with the production of a concrete for building applications. This manuscript presents a study focused on the validation and optimization of the patented SCRIPT technology at the bench scale, driven by sustainability assessment. Bench scale experiments successfully validated the technology, improving its technology readiness level. Furthermore, an environmental sustainability assessment highlighted the importance of treating the finest fraction, which has the highest indium concentration. Optimization tests at the bench scale demonstrated that water could be recirculated for more than five cycles. The economic sustainability tests highlighted that when the indium concentration in the material fed into the recycling plant is above 1000 mg/kg, the technology is cost effective and worth investment. Our study is fundamental for boosting indium recycling in the world. Moreover, our methodological approach represents a guideline for achieving sustainability goals within circular economy approaches for strategic metals in complex matrices. [ABSTRACT FROM AUTHOR]

Transconductance (gm) is one important figure of merit for benchmarking organic electrochemical transistor (OECT) biosensors, which nevertheless experiences undesired fluctuation instead of keep constant during the target detection of varied concentrations. Light‐matter interplay is recently shown as a potential way to regulate the OECT characteristics, e.g. maximum gm at zero gate bias is achieved. In this work, the challenge of unstable gm is addressed by using a unique metal‐organic framework (MOF)‐derived hollow tube indium sulfide (m‐In2S3) as the photogate. Interestingly, the light irradiation on m‐In2S3 generate a straight transfer curve, leading to a stable gm that is desirable for biological application. Exemplifying by an aptasening, such a device is then tested for protein quantification with a stable sensitivity during the detection. This work features the feasibility of light‐matter interplay to achieve a stable gm in organic electronics. [ABSTRACT FROM AUTHOR]

Subnanometer metal clusters show advantages over conventional metal nanoparticles in numerous catalytic reactions owing to their high percentage of exposed surface sites, abundance of under‐coordinated metal sites and unique electronic structures. However, the applications of subnanometer metal clusters in high‐temperature catalytic reactions (>600 °C) are still hindered, because of their low stability under harsh reaction conditions. In this work, we have developed a zeolite‐confined bimetallic PtIn catalyst with exceptionally high stability against sintering. A combination of experimental and theoretical studies shows that the isolated framework In(III) species serve as the anchoring sites for Pt species, precluding the migration and sintering of Pt species in the oxidative atmosphere at ≥650 °C. The catalyst comprising subnanometer PtIn clusters exhibits long‐term stability of >1000 h during a cyclic reaction‐regeneration test for ethane dehydrogenation reaction. [ABSTRACT FROM AUTHOR]

Although the adduct of aluminum trichloride with thionyl chloride has been reported, no thionyl chloride adduct of a main group element Lewis acid or organometallic compound has been structurally characterized. In this communication we present the synthesis and reactivity of the structurally ascertained adduct of thionyl chloride with tris(pentafluoroethyl)gallane as a representative of a main group element Lewis acid. Gallium and indium compounds with electron withdrawing groups, e.g. the pentafluoroethyl ligand, display versatile properties. While gallates and indates, [MR4]−, behave as weakly coordinating anions, neutral gallanes and indanes, MR3, are strong Lewis acids. Salts with the tetrakis(pentafluoroethyl)gallate and ‐indate, [M(C2F5)4]− (M=Ga, In), have recently been studied in detail. In contrast to this, work on the syntheses of the free Lewis superacids M(C2F5)3 (M=Ga, In) is scarce and underdeveloped. The hydrates [M(C2F5)3(OH2)2] proved to be suitable starting materials, particularly due to their thermal stability. Herein we report on synthesis and characterization of reactive adducts, [M(C2F5)3D], with the weak donor molecules (D) SOCl2 and Me3SiF. The effective Lewis acidities of Ga(C2F5)3 and In(C2F5)3 were experimentally determined by the (modified) Gutmann‐Beckett method and their catalytic potential is showcased. [ABSTRACT FROM AUTHOR]

Gallium and indium, metals present in light-emitting diode (LED) lighting technology, can be effectively recovered from aqueous solutions by sorption. For this purpose, carbonaceous materials, such as activated carbon, or low-cost biosorbents as beer bagasse, spent coffee grounds or peanut shells, and a low-cost zeolite as chabazite, were characterized by BET, FTIR, XRD, and SEM analysis prior use. Protonated chabazite, with high surface area (505 m2/g) and a Si/Al molar ratio of 3.4, showed high sorption capacities for gallium (56 mg/g) and indium (92 mg/g), which is 10 to 30 times higher than those of our carbonaceous materials (T = 298 K, pH < 3, dosage = 1 g/L). Sorption experiments with both metals in solution showed a competitive effect between gallium and indium for the sorption sites of the chabazite, showing more affinity toward gallium than indium. Ga3+sorbed/In3+sorbed molar ratio above 2 was achieved for the same initial concentration of both metals, increasing to almost 3 when the initial gallium concentration increased, which was appropriate since gallium concentration tends to be higher in LED chips. However, the sorption capacity for both metals was always around 0.35 mmol Ga + In/g. The selectivity of the chabazite was conditioned by different behavior of both metals in aqueous solution at the sorption pH (below 3.5) being the predominant species in solution Ga(OH)2+ for gallium and In3+ for indium. Sorption with protonated chabazite can be used in the treatment of spent LEDs leachate for the dual purpose of water purification and selective metal separation. [ABSTRACT FROM AUTHOR]

The results of the thermalized flux calculation that incorporate radiative capture reactions in the presence and absence of polyethylene blocks that form an enclosure for a deuteron-deuteron (D-D) neutron generator are presented. This method can be used to measure the moderated neutron flux component in a mixture of moderated and primary neutron spectra. Using 20-cm-thick polyethylene blocks to surround a D-D neutron generator, the moderation of primary neutrons was investigated using nine indium foils. In this paper, the relationship between the moderated neutron flux and the radiative capture rates in the presence and absence of polyethylene blocks is derived. This is compared to a MCNP simulation and a calculation of modulated flux that ignore the primary neutron components. [ABSTRACT FROM AUTHOR]

The Lautenthal sphalerite-galena vein deposit is part of the world-class Upper Harz Pb-Zn-Ag district in the Harz uplift block of the Paleozoic Variscan fold belt in Germany. Its sphalerite-dominated mineral association was studied using bulk-ore chemistry, electron probe microanalysis, and laser ablation-ICP-mass spectrometry. Gallium and locally In are the main high-tech-relevant trace elements hosted by sphalerite, with up to 150 ppm Ga and up to 380 ppm In in hand-picked sphalerite samples (mean In/Zn, 0.70 × 10−3). Ore concentrates (≤ 50 kg) contain up to 65 ppm Ga and up to 109 ppm In (mean In/Zn, 0.36 × 10−3). Accessory Fe-Co-rich gersdorffite-1 occurs in the earlier quartz-sulfide ore stage and Sb-rich gersdorffite-2 in the later carbonate-sulfide stage. Enrichment patterns of In are either defined by overprinting textures in the Fe-richer sphalerite-1 of the earlier stage, or relate to primary growth zoning in Fe-poor sphalerite-2 of the later stage. Using the sphalerite geothermometer GGIMFis, formation temperatures (median) of sphalerite-1 were estimated at ~ 230 °C for the Lautenthal orebody and at ~ 175 °C for the Bromberg orebody, which may indicate lateral T-zonation for the earlier ore stage. Sphalerite-2 data indicate formation temperatures of ~ 185 °C (median). Copper-bearing brines of the carbonate-sulfide stage with assumed temperatures of ~ 250 °C initiated replacement of In-poor sphalerite-1 by chalcopyrite and remobilization of Zn and trace elements. Indium-rich sphalerite-2 occurs associated with calcite and fine-grained galena. A direct spatial or temporal link of ore formation to a magmatic-hydrothermal system is unlikely, which contrasts to In-rich epithermal and tin-polymetallic vein deposits worldwide. [ABSTRACT FROM AUTHOR]

With the rapid development of the electronic information industry, the reliability of electronic interconnection materials is crucial for the longevity of electronic components. Bi-based alloys have garnered significant attention as potential candidates for high-temperature solders. However, the inherent brittleness of Bi-based alloys has been a limiting factor in their application. In order to develop high-temperature Bi-based solders with superior performance, In element was chosen to modify the Bi-2Ag-0.5Cu alloy. Through the introduction of Ag2In and BiIn phases, much finer microstructure of Bi-based alloy can be achieved (grain size decreases from 80µm to 30 µm). Adding 2% Indium has led to notable improvements in ultimate tensile strength (·UTS) and fracture strain (3/4f), by 76.9% and 55.1% compared to Bi-2Ag-0.5Cu, respectively. Additionally, the melting point of the Bi-2Ag-0.5Cu-2In alloy is 534.3 K, meeting the specified requirements for a high-temperature solder. [ABSTRACT FROM AUTHOR]

[Display omitted] • The use of scarce indium has been avoided. • AgGaS 2 has been attested to its encouraging prospect for H 2 O 2 photosynthesis. • Synthesized AgGaS 2 features hollow nanoflake-cluster morphology. • AgGaS 2 on carbon nitride edges forms novel p-n junction for performance enhancement. • Photoreduction of Ag+ has been suppressed thus improving the stability of AgGaS 2. Hydrogen peroxide (H 2 O 2) is a promising solar fuel and its photocatalytic production has been regarded as a green and sustainable alternative to the conventional anthraquinone method. Ternary metal sulfide photocatalysts with unique superiorities are arousing increasing attention. However, photocorrosion still exists and the extensive use of scarce indium renders a limited prospect. Herein, silver thiogallate (AgGaS 2) with latent advantages in electronic properties and higher reserves of gallium than indium is reported for the first time in H 2 O 2 photosynthesis. Experiments have unveiled that the activity of single unmodified AgGaS 2 surpasses that of many counterparts. Furthermore, a novel type-Ⅱ heterostructure with hollow AgGaS 2 nanoflake-clusters grown on the edges of carbon nitride has been constructed with enhanced photocatalytic performance. In the presence of isopropanol as a sacrificial reagent, the optimum heterostructure produces H 2 O 2 with concentration 3.4 times higher than that by AgGaS 2 in a long-term reaction. Besides, it maintains 87 % of initial activity after five cycles, outperforming that of AgGaS 2 (35 %). Improvement and inactivation mechanisms are carefully investigated, confirming that the internal electric fields at the heterointerfaces between AgGaS 2 and carbon nitride promote the separation of photogenerated charge carriers and suppress the photoreduction of Ag+, which are main reasons for the enhanced activity and stability of the heterostructure. This work has attested to the potential of indium-free AgGaS 2 in H 2 O 2 photosynthesis with the elucidated improvement and inactivation mechanisms for follow-up optimizations. [ABSTRACT FROM AUTHOR]

X‐ray photoelectron spectroscopy (XPS) is widely employed across various research fields due to its surface and chemical sensitivity. However, accurate interpretation poses a challenge due to the lack of comprehensive reference data in the literature, leading to misinterpretation, especially among novice users. Analyzing the chemical state of indium and indium‐containing compounds is particularly challenging due to subtle shifts in the binding energies of the commonly used 3d core line. This paper presents and discusses a collection of reference data, including the In 3d, In 3p, In 4d, In MNN, and relevant counter ion signals. Additionally, it explores other useful information such as the modified Auger parameter and Wagner (or chemical state) plots. The utility of X‐ray–induced Auger electrons is demonstrated in the speciation of mixed systems. [ABSTRACT FROM AUTHOR]

Indium nitride (InN) is an interesting material for future electronic and photonic-related applications, as it combines high electron mobility and low-energy band gap for photoabsorption or emission-driven processes. In this context, atomic layer deposition techniques have been previously employed for InN growth at low temperatures (typically <350 °C), reportedly yielding crystals with high quality and purity. In general, this technique is assumed to not involve any gas phase reactions as a result from the time-resolved insertion of volatile molecular sources into the gas chamber. Nonetheless, such temperatures could still favor the precursor decomposition in the gas phase during the In half-cycle, therefore altering the molecular species that undergoes physisorption and, ultimately, driving the reaction mechanism to pursue other pathways. Thence, we herein evaluate the thermal decomposition of relevant In precursors in the gas phase, namely, trimethylindium (TMI) and tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) indium (III) (ITG), by means of thermodynamic and kinetic modeling. According to the results, at T = 593 K, TMI should exhibit partial decomposition of ∼8% after 400 s to first generate methylindium and ethane (C2H6), a percentage that increases to ∼34% after 1 h of exposure inside the gas chamber. Therefore, this precursor should be present in an intact form to undergo physisorption during the In half-cycle of the deposition (<10 s). On the other hand, the ITG decomposition starts already at the temperatures used in the bubbler, in which it slowly decomposes as it is evaporated during the deposition process. At T = 300 °C, the decomposition is a fast process that reaches 90% completeness after 1 s and where equilibrium, at which almost no ITG remains, is achieved before 10 s. In this case, the decomposition pathway is likely to occur via elimination of the carbodiimide ligand. Ultimately, these results should contribute for a better understanding of the reaction mechanism involved in the InN growth from these precursors. [ABSTRACT FROM AUTHOR]

Whispering gallery mode resonators (WGMRs) have garnered significant interest due to their potential applications in the fields of electro-optic modulation and microwave to optical photon conversion. In this study, we have leveraged an electro-optic crystal, lead indium niobate-lead magnesium niobate-lead titanate (PIN-PMN-PT), to fabricate a high-quality WGMR. Our investigation revealed that the crystal composition used in this work is 0.24PIN-0.45PMN-0.31PT, and each element of the whole sample is homogeneously distributed. The dielectric properties of the sample revealed the necessity of limiting the temperature and external electric field frequency to below 100 °C and 106 Hz, respectively. The obtained optical quality factor value (Q value) of the resonator is ∼0.7 × 105. Impressively, our resonator could be conveniently tuned by exploiting the enormous inverse piezoelectric effect d31 of the crystal, thereby alleviating the need for precise fabrication. Furthermore, a theoretical analysis of our resonator revealed that a calculated resonance wavelength shift is within a broad range of 2.16 nm. Intriguingly, if the surface roughness of the resonator is reduced tenfold, we can increase the calculated Q value dependent on surface scattering by 104. Our finding showcases the tremendous potential of the PIN-PMN-PT crystal-based WGMR as versatile building blocks for a variety of applications in the burgeoning field of photonic technology. [ABSTRACT FROM AUTHOR]

Herein, we report an efficient route for coumarin C3‐C4 fused imidazole scaffolds via indium chloride‐mediated single‐step transformation of 4‐azido‐coumarin with amines/aldehydes and coumarin C3‐C4 fused 5‐substituted‐1,4‐benzodiazepine scaffolds with 1,2‐azide‐nitrogen migration through two‐step sequential synthesis via the transitory intermediacy of 2,3‐bridged‐2H‐azirine. A plausible mechanistic pathway has been proposed from the control/entrapment experiments and 1H‐NMR studies. This protocol provides the reaction condition‐dependent product selectivity, structural diversification, and excellent yields. [ABSTRACT FROM AUTHOR]

By solvothermal reactions of fluoro substituted biphenyl‐3,3',5,5'‐tetracarboxylic acids (H4BPTC) with the respective metal salts, four new MOFs with the MFM‐300 topology were synthesized, namely [MIII2(OH)2(L)] with MIII=Ga3+, In3+ and L=4‐mF‐BPTC4− and 4,4'‐dF‐BPTC4−. Three of them were refined from X‐ray single crystal diffraction data (I4122, Z=4), [Ga2(OH)2(4,4'‐dF‐BPTC)] was confirmed by Le Bail fits based on synchrotron powder diffraction data. To the best of our knowledge, these four compounds represent the very first examples of MFM‐300 type MOFs with a substituted BPTC4− linker. With increasing fluorination of the linker, the thermal stability decreases, as the decarboxylation of the linker is facilitated. On the other hand, the gas uptake is enhanced significantly. E.g. the CO2 uptake (273 K, 1 bar) increases from 124 cm3/g for [Ga2(OH)2(4‐mF‐BPTC)] to 136 cm3/g for [Ga2(OH)2(4,4'‐dF‐BPTC)]. Surprisingly, the exact determination of specific surface areas (SBET) turned out to be difficult. It is supposed that due to transient open metal sites, complete removal of solvent molecules (DMF, acetone) is not always possible before degradation of the framework starts. [ABSTRACT FROM AUTHOR]

The recent observations of superconductive ordering in low-dimensional systems comprising twisted and rhombohedral ABC-stacked multilayer graphene have attracted significant attention. One-dimensional moiré superlattices and flat-bands have been interestingly reported to occur also in collapsed chiral carbon nanotubes. In this work we report the unusual stabilization of hexagonal moiré-like superlattices in partially-collapsed carbon nano-onions (CNOs). Such a structural transition was identified by employing indium-isopropoxide as a growth-promoter, during the pyrolysis of fixed quantities of ferrocene, dichlorobenzene and sulfur. Raman point and mapping spectroscopy analyses highlight a significant enhancement in the D-band intensity with the increase of the indium-isopropoxide concentration, up to a maximum for a precursor quantity of 10 mg. A uniform growth product consisting of stacking-faults-rich partially collapsed CNOs is demonstrated. Larger amounts of indium-isopropoxide were instead found to yield a transition from CNO to carbon nanotubes (CNTs) and consequential depletion of the D-band intensity-parameter. [ABSTRACT FROM AUTHOR]

Electrocatalysts based on high‐valent indium are promising for formate production via CO2 electroreduction. However, reconstruction often occurs during the reaction progress, resulting in a decline in catalytic performance. Here, a composite of In2O3/In2S3 is developed, and its catalytic performance exceeds that of either individual phase, particularly in stability. Analysis of morphology, valence state, and in situ Raman spectroscopy reveals that In2O3 is well preserved during the reaction. Theoretical calculations suggest that the desorption energy of lattice oxygen on In2O3 can be strengthened due to In2O3‐In2S3 bonding within the composite. This reinforcement facilitates the formation of more active sites and promotes CO2 adsorption, further decreasing the energy barrier of formate production to only 0.12 eV. As a result, the composite exhibits a formate selectivity over 95.05% at –1.13 V vs reversible hydrogen electrode accompanied by a partial current density of 434.4 mA cm–2. Notably, the selectivity of formate maintains over 95% even after 50 h at an industrial‐level current density of 200 mA cm–2, 17 times longer than the individual phase. Furthermore, 18.33% solar‐to‐formate and 19.49% solar‐to‐fuel are obtained when coupled with III‐V solar cells, demonstrating its feasibility. [ABSTRACT FROM AUTHOR]

The impact of light‐induced degradation (LID) treatments is investigated using low‐temperature photoluminescence in Si:In. A feature called as the P‐line, located at 1.118 eV, provides information on the decisive energy barrier for the LID effect. The intensity of the P‐line can be reproducibly influenced by illumination and annealing treatments. The decay of the P‐line after quenching, illumination, and moderate annealing of the silicon samples is measured as function of time and annealing temperature. Both indium‐doped as‐grown Czochralski and indium implanted float‐zone silicon wafers are examined and their behavior is compared. Based on these measurements, an energy barrier for the P‐line defect transition E(2)(1)all=(0.62±0.06) eV$E_{\left(\right. 2 \left.\right) \left(\right. 1 \left.\right)}^{\text{all}} = \left(\right. 0.62 \pm 0.06 \left.\right) \textrm{ } \text{eV}$ is calculated. The LID defect model is used to discuss the results. [ABSTRACT FROM AUTHOR]

Indium seals have been used extensively in ultra-high vacuum and cryogenic applications. Typically, these seals use indium alongside or in place of other metal gaskets in stainless-steel vacuum flanges, with some custom applications for flanges sealing directly with glass (optics or tubes). Here, we present the design and performance of three pressed indium seals (99.99% In) between aluminum and 0.5 in. diameter sapphire optics and aluminum and gold coated Kovar semiconductor packages (TO-66 and TO-39). Test fixtures were designed to mimic those of future tunable diode laser spectrometers for Earth, planetary, and manned spaceflight environmental monitoring applications. Successful high-hermeticity seals [<10−10 atm cc/s (He)] were achieved for all seals formed with sufficient pressure applied to allow indium to flow between mating surfaces. The hermeticity of the seals was maintained after temperature cycling (−10 to +80 °C, 20 cycles), with the optical seals surviving extended duration tests (−55 to +85 °C, per MIL-STD-883). Semiconductor packages (TO-39) subjected to these extended tests saw a moderate increase in leak rate [∼5 × 10−9 atm cc/s (He)]; however, further testing showed that either the glass-metal package seals or the indium were affected (the sample size was too small to draw firm conclusions for future applications). Overall, these results suggest long-term survivability of indium seals for Kovar–aluminum and sapphire–aluminum interfaces [>10 years at 10−10 atm cc/s (He)], where the coefficient of thermal expansion differs by approximately four times. [ABSTRACT FROM AUTHOR]

Titanium dioxide (TiO2) catalysts are primarily utilized under ultraviolet light, and their potential in industrial applications remains largely untapped. To address this issue, our study uses a one-pot impregnation method to prepare a series of In-TiO2/TSS(X) (TSS, Tobacco stem silk. X, the molar ratio of In/Ti) catalysts. Among them, the degradation performance of the In-TiO2/TSS(2.0) material increased from 13.8% for TiO2 to an impressive 92.9%. By establishing a first-order kinetic model, it was determined that the degradation performance of the In-TiO2/TSS(2.0) material surpassed that of TiO2 by a factor of 24. Structural characterization revealed that the introduction of tobacco stem silk templates did not alter the crystal phase of TiO2 and that the main component of the catalyst remained TiO2. Not only that, an O–In structure formed on the surface of the TiO2, leading to a significant increase in the material's specific surface area. Furthermore, principle tests were conducted, revealing significant enhancements in its light absorption capacity, intensity, and photocurrent density. Through active species trapping experiments, it was observed that, in the photocatalytic degradation process of this catalyst series, holes (h+) played the primary role, while the hydroxyl ion (·OH) and superoxide ion (·O2−) acted as auxiliary species. [ABSTRACT FROM AUTHOR]

This report documents evaluation of simultaneous estimation of multiple interfacial heat transfer coefficients (HTCs) using transient measurements from an experiment designed for steady-state operation. The design of a mirror system for directing X-rays under cryogenic conditions requires knowledge of the interfacialHTC (contact conductance) between silicon and indium. An experimental apparatus was constructed to measure temperatures in a stack of five 7.62-mm thick pucks of silicon separated by 0.1-mm thick sheets of indium, which is operated under cryogenic temperatures in vacuum. Multiple pucks and interfaces are incorporated into the apparatus to allow evaluation of HTCs for surfaces of different roughness from a single experiment. Analysis of the sensitivity of each of the measured temperatures to each of the unknown HTCs reveals lack of linear independence of these sensitivities and suggests the recovery of the HTCs will be challenging. Artificially noised "data" were created from two different computational models by solving for temperatures and adding random Gaussian noise with a specified standard deviation. These data are subsequently analyzed using two different iterative parameter estimation methods: a Levenberg scheme and a Tikhonov iterative scheme. The required sensitivity matrix is computed using forward finite difference approximations. The results for the heat transfer coefficients for this model problem suggest that coefficients cannot be estimated independently, but the ratios relative to one of the unknowns can be recovered. [ABSTRACT FROM AUTHOR]

Oxide semiconductor-based thin-film transistors (TFTs) are promising candidates for display backplanes and memory device applications. To achieve high device performance and sustain the electrical properties under prolonged operation, it is important to overcome the mobility–stability trade-off in oxide TFTs. Here, we propose a bilayer-structured semiconductor stack formed by plasma-enhanced atomic layer deposition (PEALD), where an indium-free gallium zinc oxide (GZO) film is grown on top of indium gallium zinc oxide (IGZO), to be implemented in top gate devices. Applying a GZO layer (with optimum Ga to Zn ratio) between the IGZO and the gate insulator (GI) resulted in two major effects: interface engineering and band alignment modulation. While maintaining a sufficiently large field effect mobility (31.9 cm2 V−1 s−1), considerable improvements in device reliability were observed concerning positive-bias thermal stress (PBTS) and negative-bias illumination stress (NBIS) compared to TFTs incorporating IGZO single layers. This suggests that proper composition control through PEALD in the bilayer oxide semiconductor TFT may help achieve an appropriate balance between mobility and reliability. [ABSTRACT FROM AUTHOR]

This study focuses on zinc oxide by both computational and experimental methods. Pure and In-doped ZnO thin films were produced by spray pyrolysis at 300∘C onto glass substrate. X-ray patterns reveal the polycrystalline structure according to wurtzite along the (002) direction recording a smaller grain size in nanometric scale. This aspect is confirmed by AFM scanned pictures. High transparency of thin film is observed in spite of the indium insertion into ZnO lattice which decreases it slightly. A wide bandgap exceeds 3 eV of such as-grown films were recorded. Blue and orange emissions were detected as confirmed by photoluminescence analysis. Computational result analysis is used to demonstrate the ideal geometries in the ground states of pure and doped ZnO. The UV–visible absorption band shifts from 360 nm to 448 nm as a result of In-doping. The HUMO and LUMO diagrams demonstrate a drop in energy E as a result of doping, and the DOS profiles validate and confirm this detail. Also, the effect of indium on the linear and nonlinear optical parameters of zinc oxide was discussed. [ABSTRACT FROM AUTHOR]

Light‐emitting diodes (LED) are widely used for energy savings. A lot of different materials and especially metals are needed to produce LED. End‐of‐life LED contain critical metals like indium or rare earth elements. In this study, first a thermochemical step is used to recover the critical metal indium from LED with hydrochloric acid‐containing vapor from polyvinyl chloride as chlorine source. Then, the LED residue is leached with sulfuric acid and hydrogen peroxide. From the leachate, the heavy rare earth element lutetium can be extracted with n‐octanol and tributyl phosphate. [ABSTRACT FROM AUTHOR]

Liquid metal alloys can accumulate specific solute metal atoms on their surface, creating distinct quasi‐ordered atomic layers. Such atomic layers can be tuned by varying the alloy composition to form catalytic interfaces suited for multi‐step reactions. Here, the surface enrichment in gallium‐indium alloys is studied and utilized for carbon dioxide (CO2) electrochemical reduction. The results show that adding a small amount of indium (16.8 at%) to gallium leads to a significant indium enrichment of >83 at% on the topmost layer of the alloy. This enrichment dictates the CO2 conversion pathway, leading to 98% faradaic efficiency toward formate at −1.90 V vs reversible hydrogen electrode (RHE). This study produces unprecedented insights into key interfacial processes and lays the foundation for significant further work within the areas of catalysis and liquid metals. [ABSTRACT FROM AUTHOR]