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2 results on '"incomplete dipole flipping"'

1. Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO3 Capacitor

Author

Tsung-Kuei Kang, Yu-Yu Lin, Han-Wen Liu, Che-Li Lin, Po-Jui Chang, Ming-Cheng Kao, and Hone-Zern Chen

Subjects
BiFeO3 capacitor, sol–gel method, drive current, hysteresis, subthreshold swing, incomplete dipole flipping, Chemical technology, TP1-1185, Chemical engineering, TP155-156
Abstract

By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO3 capacitor on IDS-VGS hysteresis in the BFO TFT is 0.1–0.2 V. Because dVint/dVGS > 1 is obtained at a wide range of VGS, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.

Published
2021
Full Text
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2. Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO 3 Capacitor.

Author

Kang, Tsung-Kuei, Lin, Yu-Yu, Liu, Han-Wen, Lin, Che-Li, Chang, Po-Jui, Kao, Ming-Cheng, and Chen, Hone-Zern

Subjects
THIN film transistors, CAPACITORS, TRANSISTORS, NANOWIRES, SOL-gel processes, SILICON nanowires, POLYMER colloids
Abstract

By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO3 capacitor on IDS-VGS hysteresis in the BFO TFT is 0.1–0.2 V. Because dVint/dVGS > 1 is obtained at a wide range of VGS, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application. [ABSTRACT FROM AUTHOR]

Published
2021
Full Text
View/download PDF

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