33 results on '"hrstem"'
Search Results
2. Mapping of interstitial atoms using super-resolution and optimized machine-learning techniques
- Author
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Guedj Cyril
- Subjects
imaging ,super-resolution ,superresolution ,machine-learning ,mapping ,interstitials ,tem ,stem ,hrstem ,Microbiology ,QR1-502 ,Physiology ,QP1-981 ,Zoology ,QL1-991 - Abstract
Dedicated machine-learning techniques applied to superresolved HRSTEM images are used to map interstitial atoms with decananometric spatial resolution and picometric precision. This methodology is illustrated with the technologically-relevant case of etched GaN, used for power devices. In general, an average chemical concentration evolution close to a typical erf implantation profile is obtained, in agreement with atomistic simulations.
- Published
- 2024
- Full Text
- View/download PDF
3. Silicide precipitation in aged quasi-α Ti alloys
- Author
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Fossard Frédéric, Armanni Thibaut, Douillard Thierry, Mérot Jean-Sébastien, and Appolaire Benoît
- Subjects
fib/sem tomography ,titanium ,silicides ,hrstem ,Microbiology ,QR1-502 ,Physiology ,QP1-981 ,Zoology ,QL1-991 - Published
- 2024
- Full Text
- View/download PDF
4. Visualizing single-atom promotion of ultra-deep hydrodesulfurization catalysts (Pt-Co-Mo-S)
- Author
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Hansen Lars Pilsgaard, Weise Christian F., Falsig Hanne, Moses Poul G., Helveg Stig, and Brorson Michael
- Subjects
hds catalyst ,single-atom promotion ,hrstem ,Microbiology ,QR1-502 ,Physiology ,QP1-981 ,Zoology ,QL1-991 - Published
- 2024
- Full Text
- View/download PDF
5. Multilayer crystal-amorphous Pd-based nanosheets on Si/SiO2 with interface-controlled ion transport for efficient hydrogen storage.
- Author
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Sarac, Baran, Ivanov, Yurii P., Karazehir, Tolga, Mühlbacher, Marlene, Sarac, A. Sezai, Greer, A. Lindsay, and Eckert, Jürgen
- Subjects
- *
HYDROGEN storage , *PROTON exchange membrane fuel cells , *DIFFUSION coefficients , *MULTILAYERED thin films , *NANOSTRUCTURED materials - Abstract
This contribution shows an unusually high hydrogen storage of multilayer amorphous (A)-crystalline (C) Pd–Si based nanosheets when stacked in the right order. Samples with A/C/A/C/A stacking sequence exhibit 40 and 12 times larger hydrogen sorption than monolithic crystalline and amorphous samples, respectively. The maximum capacitance calculated from the fitting of electrochemical impedance measurements of the same sample is twice larger than that of the conventional polycrystalline Pd films of similar thickness. Five times higher diffusion coefficient calculated from modified Cottrell equation is obtained compared to specimens with C/A/C/A/C stacking. For the A/C/A/C/A multilayers, nanobubbles with diameters of 1–2 nm are homogeneously distributed at Si/SiO 2 interface, and PdH x crystal formation in these regions confirms hydrogen-metal interactions. Furthermore, corrosion-resistant amorphous top layer permits larger amounts of hydrogen ion transfer to inner layers. Thus, hydrogen storage and production can be enhanced by smart design of multilayers targeted for proton exchange membrane electrolysis or fuel cells. [Display omitted] • Ultra-high hydrogen storage in amorphous (A)-crystalline (C) Pd–Si based nanosheets. • Nanobubbles and PdH x crystal formation at metal-Si interface recorded by HR(S)TEM. • Corrosion-resistant amorphous top layer grants hydrogen ion transfer to inner layers. • Modified Cottrell equation yields five times higher diffusion in A/C/A/C/A stacking. • Maximum capacitance of A/C/A/C/A from ECM twice larger than crystal Pd thin film. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF
6. Application of Analytical Electron Microscopy and Tomographic Techniques for Metrology and 3D Imaging of Microstructural Elements in Allvac® 718Plus™
- Author
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Kruk, A., Cempura, G., Lech, S., Wusatowska-Sarnek, A. M., Czyrska-Filemonowicz, A., Ott, Eric, editor, Liu, Xingbo, editor, Andersson, Joel, editor, Bi, Zhongnan, editor, Bockenstedt, Kevin, editor, Dempster, Ian, editor, Groh, Jon, editor, Heck, Karl, editor, Jablonski, Paul, editor, Kaplan, Max, editor, Nagahama, Daisuke, editor, and Sudbrack, Chantal, editor
- Published
- 2018
- Full Text
- View/download PDF
7. Novel Material and Technological Solutions in Foundry Engineering.
- Author
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Wróbel, Tomasz and Wróbel, Tomasz
- Subjects
History of engineering & technology ,Technology: general issues ,AFM microscopy ,Al-Si-Cu secondary aluminum alloy ,Al4C3 carbide ,Babbitt ,Brinell hardness ,Cu precipitate ,EDS analysis ,FTIR ,HIPIMs method ,HRSTEM ,Inconel 740 ,M23C6 ,SEM ,STEM-EDX ,TiAlN layer ,XRD ,XRD analysis ,XRF ,alumina ,aluminosilicate ,austenitizing conditions ,automotive industry ,bell's sound ,bimetallic ,casting composite ,coating thickness ,compound casting ,cooling conditions ,crystallization ,cylinder heads ,dehydroxylation ,ductile cast iron ,graphite ,gravitational segregation ,gray cast iron ,hardness ,heat treatment ,hexagonal alloys ,high-aluminum cast iron ,high-chromium cast iron ,high-tin bronzes ,in situ composite ,inorganic binder ,interfacial ,investment casting ,laser surface alloying ,magnetron sputtering ,martensite transformation ,mechanical ,mechanical properties ,metallic matrix ,microstructure ,monotectic transformation ,moulding sand ,nano-borides ,nanocomposite ,nanoparticle ,natural and artificial aging ,pearlite ,perlite ,phase transformation ,reinforcement particles ,returnable material ,silicon carbide ,solidification ,spontaneous disintegration of the casting structure ,superalloy ,supergravity crystallization ,surface morphology ,texture ,thermal analysis ,thermal and derivative analysis ,titanium carbide ,transmission electron microscopy ,vermiculite ,welding of bell - Abstract
Summary: The Special Issue of the journal Materials, entitled "Novel Material and Technological Solutions in Foundry Engineering", contains very interesting papers from the field of material science concerning topics such as cast composites, layered castings, selected aspects of the crystallisation of alloys and the technology of cast and heat treatment of Al alloys and cast iron, the properties of moulding sands, properties of Ni-base superalloys, the technology of repairing castings using welding.
8. Determination of intrinsic strain tensor components in nanostructures from HR-(S)TEM images in absence of reference lattice
- Author
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Cherkashin, Nikolay, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
displacement ,polarization ,HRSTEM ,HAADF ,AbStrain ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,strain tensor - Abstract
International audience
- Published
- 2022
9. Coupled experimental and computational investigation of omega phase evolution in a high misfit titanium-vanadium alloy.
- Author
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Choudhuri, D., Zheng, Y., Alam, T., Shi, R., Hendrickson, M., Banerjee, S., Wang, Y., Srinivasan, S.G., Fraser, H., and Banerjee, R.
- Subjects
- *
TITANIUM-vanadium alloys , *PHASE transitions , *CRYSTAL morphology , *PRECIPITATION (Chemistry) , *TRANSMISSION electron microscopy - Abstract
Morphological and compositional evolution of omega (ω) precipitates in a model Titanium-20 wt%Vanadium (or 19 at.%V) alloy has been systematically investigated by coupling transmission electron microscopy and atom probe tomography with atomistic ab initio and continuum microelasticity computations. The initial water quenched microstructure comprised of a fine scale distribution of athermal ω precipitates, which form congruently from the β phase via a complete displacive collapse of {222} β planes, that has been rationalized based on DFT computations. Subsequent annealing at 300 °C, over progressively increasing time periods, resulted in isothermal evolution of the ω precipitates, whose morphology changes from ellipsoidal to cuboidal, accompanied with V rejection. The highly V-enriched β matrix consisted of short V V bond lengths, further distorting the bcc lattice, and increasing the β/ω misfit. This facilitates the change in the morphology of omega precipitates from ellipsoidal to cuboidal resulting in a {001} β habit plane for these precipitates. The coupled experimental and computational approach permits rationalizing the evolution of ω precipitate morphology and composition in such high β−ω misfit β-Ti alloys. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
- View/download PDF
10. Phase decomposition of Ni5Pb2Te3 in diffusion bonded PbTe-Ni interfaces – A TEM and thermodynamic study.
- Author
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Kumar, Dipanjan, Singh, Mahander Pratap, Ravishankar, N., and Chattopadhyay, Kamanio
- Subjects
- *
THERMOELECTRIC apparatus & appliances , *PHASE transitions , *PHASE equilibrium , *HETEROJUNCTIONS , *THERMOELECTRIC generators , *TERNARY alloys - Abstract
The study of metallurgical phase transformations is essential for developing reliable interconnects in thermoelectric devices. PbTe-based devices are used in mid-temperature range applications, with Ni being the most preferred contact metal. Several studies have reported the direct joining of PbTe and Ni through rapid hot-pressing routes. However, the study of equilibrium phase transformations in these processes is complex owing to many external variables (applied pressure, electrical current, and simultaneous sintering of PbTe). Furthermore, the long-term phase transformation behavior of Ni 5 Pb 2 Te 3 and (Ni 3±x Te 2) β 2 phases generated from PbTe/Ni interaction has not been examined. This paper reports the phase decomposition of the high-temperature Ni 5 Pb 2 Te 3 phase in diffusion bonded PbTe/Ni heterointerfaces and presents a general thermodynamic framework to predict such transformations. The phase decomposition is studied through advanced analytical TEM/STEM techniques. The Ni 5 Pb 2 Te 3 phase transforms into monoclinic β 2 and PbTe phases with a lamellae-like arrangement accompanied by the formation of extrinsic stacking faults in the β 2 lamellae. Our work highlights an effective experimental technique (solid-state diffusion bonding) that can be applied to study a metal-contact problem in thermoelectrics and outlines a framework to derive essential thermodynamic data in the absence of any experimental measurements and crystallographic information. [Display omitted] [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF
11. Ammoxidation of propane to acrylonitrile over silica-supported Fe-Bi nanocatalysts.
- Author
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Adams, Richard D., Elpitiya, Gaya, Khivantsev, Konstantin, Blom, Douglas, Alexeev, Oleg S., and Amiridis, Michael D.
- Subjects
- *
AMMOXIDATION , *ACRYLONITRILE , *SILICA , *CATALYSTS , *CHEMICAL sample preparation , *DECARBONYLATION - Abstract
Ammoxidation of propane to acrylonitrile was examined over a Fe 3 BiO x /SiO 2 sample prepared by thermal decarbonylation of [Et 4 N][Fe 3 (CO) 10 (μ 3 -Bi)] on the surface of mesoporous silica. Catalytic measurements performed at 500 °C showed that this sample yields 49% acrylonitrile selectivity at 36% propane conversion when a 5.5%C 3 H 8 /30%O 2 /11%NH 3 /He balance reaction mixture was used at a GHSV of 1360 h −1 . HRSTEM, EDS, and XPS measurements indicate that mixed Fe 3 BiO 6 oxide particles less than 2 nm in size were formed on the surface of this material under reaction conditions. A Fe/Bi atomic ratio in these particles is approximately 3:1 and the Fe and Bi ions both are in the +3 oxidation state. A Fe-Bi/SiO 2 sample prepared by co-impregnation of individual Fe and Bi salts had very low activity and low selectivity for acrylonitrile formation from propane under similar experimental conditions due to larger sizes of particles formed under reaction conditions and enrichment of their surface with Fe. [ABSTRACT FROM AUTHOR]
- Published
- 2015
- Full Text
- View/download PDF
12. Analysis of γ′ Precipitates, Carbides and Nano-Borides in Heat-Treated Ni-Based Superalloy Using SEM, STEM-EDX, and HRSTEM
- Author
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Rafał Cygan, Małgorzata Grudzień-Rakoczy, Łukasz Rakoczy, Bogdan Rutkowski, Anna Zielińska-Lipiec, and Wiktoria Ratuszek
- Subjects
Morphology (linguistics) ,Materials science ,HRSTEM ,02 engineering and technology ,lcsh:Technology ,01 natural sciences ,Article ,Carbide ,law.invention ,STEM-EDX ,superalloy ,law ,Phase (matter) ,0103 physical sciences ,Nano ,Microscopy ,General Materials Science ,M23C6 ,lcsh:Microscopy ,nano-borides ,lcsh:QC120-168.85 ,010302 applied physics ,lcsh:QH201-278.5 ,lcsh:T ,021001 nanoscience & nanotechnology ,Microstructure ,Superalloy ,Chemical engineering ,lcsh:TA1-2040 ,lcsh:Descriptive and experimental mechanics ,lcsh:Electrical engineering. Electronics. Nuclear engineering ,Electron microscope ,lcsh:Engineering (General). Civil engineering (General) ,0210 nano-technology ,lcsh:TK1-9971 - Abstract
The microstructure of a René, 108 Ni-based superalloy was systematically investigated by X-ray diffraction, light microscopy, energy-dispersive X-ray spectroscopy, and electron microscopy techniques. The material was investment cast in a vacuum and then solution treated (1200 °, C-2h) and aged (900 °, C-8h). The &gamma, matrix is mainly strengthened by the ordered L12 &gamma, &prime, phase, with the mean &gamma, /&gamma, misfit, &delta, +0.6%. The typical dendritic microstructure with considerable microsegregation of the alloying elements is revealed. Dendritic regions consist of secondary and tertiary &gamma, precipitates. At the interface of the matrix with secondary &gamma, precipitates, nano M5B3 borides are present. In the interdendritic spaces additionally primary &gamma, precipitates, MC and nano M23C6 carbides were detected. The &gamma, precipitates are enriched in Al, Ta, Ti, and Hf, while channels of the matrix in Cr and Co. The highest summary concentration of &gamma, formers occurs in coarse &gamma, surrounding MC carbides. Borides M5B3 contain mostly W, Cr and Mo. All of MC carbides are enriched strongly in Hf and Ta, with the concentration relationship between these and other strong carbide formers depending on the precipitate&rsquo, s morphology. The nano M23C6 carbides enriched in Cr have been formed as a consequence of phase transformation MC + &gamma, &rarr, M23C6 + &gamma, during the ageing treatment.
- Published
- 2020
13. Microstructural Characterisation of Austenitic Heat Resistant Sanicro 25 Steel after Steam Oxidation
- Author
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Bogdan Rutkowski
- Subjects
Heat resistant ,Materials science ,HRSTEM ,Scanning electron microscope ,Oxide ,02 engineering and technology ,lcsh:Technology ,01 natural sciences ,Article ,Matrix (geology) ,chemistry.chemical_compound ,steam oxidation ,0103 physical sciences ,General Materials Science ,steel ,lcsh:Microscopy ,lcsh:QC120-168.85 ,010302 applied physics ,Austenite ,lcsh:QH201-278.5 ,lcsh:T ,Metallurgy ,021001 nanoscience & nanotechnology ,Microstructure ,Amorphous solid ,chemistry ,lcsh:TA1-2040 ,SEM ,lcsh:Descriptive and experimental mechanics ,lcsh:Electrical engineering. Electronics. Nuclear engineering ,lcsh:Engineering (General). Civil engineering (General) ,0210 nano-technology ,lcsh:TK1-9971 ,Water vapor - Abstract
Microstructural and morphological observations of the surface scale on a high Cr and Ni austenitic heat resistant steel oxidised in water vapour at 700 °, C are reported. Analysis of microstructure was carried out by analytical techniques of transmission- and scanning electron microscopy. Investigation of M23C6 nucleated at the interface between matrix and the Z-phase precipitates after exposing to high temperature showed semicoherency between M23C6 and the matrix and no coherency with the Z-phase. Plates developed on the oxide scale surface consist of Cr2O3 crystals separated by amorphous SiO2.
- Published
- 2020
- Full Text
- View/download PDF
14. Precipitation of ordered phases in metallic solid solutions: A synergistic clustering and ordering process
- Author
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Viswanathan, G.B., Banerjee, R., Singh, A., Nag, S., Tiley, J., and Fraser, H.L.
- Subjects
- *
SOLID solutions , *PHASE separation method (Engineering) , *NICKEL alloys , *SCANNING transmission electron microscopy , *CHEMICAL decomposition , *AMMONIUM paratungstate - Abstract
The precipitation mechanism of ordered phases in metallic solid solutions has been a long-standing controversy due to the competing roles of chemical clustering (or phase separation) and chemical ordering. In the present study, this controversy has been resolved through the coupled use of aberration-corrected high-resolution scanning transmission electron microscopy and atom probe tomography. The experimental results, obtained at atomic resolution, can only be interpreted satisfactorily on the basis of phase separation via spinodal decomposition followed by chemical ordering. [ABSTRACT FROM AUTHOR]
- Published
- 2011
- Full Text
- View/download PDF
15. Atomically resolved microscopy of ion implantation induced dislocation loops in 4H-SiC.
- Author
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Karlsson, L.H., Hallén, A., Birch, J., Hultman, L., and Persson, P.O.Å.
- Subjects
- *
ION implantation , *DISLOCATION loops , *LATTICE theory , *ATOMIC structure , *DOPING agents (Chemistry) - Abstract
During high temperature electrical activation of ion-implanted dopant species in SiC, extrinsic dislocation loops are formed on the basal planes of the SiC lattice. Investigations have suggested Si-based loops are caused in accordance with the well-known +1 model. Herein we apply aberration corrected STEM to resolve the atomic structure of these loops. It is shown that the dislocation loops formed during annealing of Al-implanted SiC consist of an extra inserted Si-C bilayer of the (0001) polar sense, which upon insertion into the lattice causes a local extrinsic stacking fault. The +1 model thus needs to be expanded for binary systems. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF
16. HREM of the {111} surfaces of iron oxide nanoparticles
- Author
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Lovely, G.R., Brown, A.P., Brydson, R., Kirkland, A.I., Meyer, R.R., Chang, L.Y., Jefferson, D.A., Falke, M., and Bleloch, A.
- Subjects
- *
NANOPARTICLES , *MAGNETITE , *MAGHEMITE , *IRON oxides - Abstract
Abstract: Mixed phase Fe3O4-γ-Fe2O3 (magnetite–maghemite) iron oxide nanoparticles have been fabricated by colloidal routes. HRTEM/HRSTEM images of the nanoparticles show the presence of {111} facets that terminate with enhanced contrast, which is shown to be caused by the presence of additional cations at the edges of the nanoparticles. HRTEM images were taken on a FEI CM200 FEGTEM, a JEOL 3100 with a LaB6 source, and a double aberration corrected JEOL-JEM 2200FS FEGTEM. The enhanced contrast effect was observed on the {111} surface atomic layers resolved using each machine. HRSTEM images, taken on an aberration corrected STEM, resolved enhanced contrast at specific surface sites. Exit wave reconstruction was also carried out on focal series taken on a double aberration corrected JEOL-JEM 2200FS and showed similar highly resolved enhanced contrast at specific surface cation sites. It is apparent that additional cations are occupying the {111} terminating layers of these nanoparticle surfaces. The use of different microscopes and techniques in this paper provides strong evidence that the enhanced contrast is a real effect and not an effect caused by microscope aberrations. [Copyright &y& Elsevier]
- Published
- 2006
- Full Text
- View/download PDF
17. Dependence of Dipole Layer on Graphite Surface on Size of Contacting Gold Nanoparticles
- Author
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S. W. Mugo
- Subjects
HRSTEM ,SKPM ,charge transfer ,TEM ,Graphene ,STEM - Abstract
The interfacial dipole on pyrolytic graphite surface shows a high dependence with size and coverage of gold nanoparticles. Small nanoparticles with an average size of 2.4 nm exhibit a large dipole moment, decreasing with increasing particle diameter. The value becomes negative for nanoparticles > 6 nm. The behaviour is described by charge densities created after charge transfer between individual gold nanoparticles and graphite surface. The subsequent decrease in dipole for large nanoparticles is shown to be due to depolarization effects. The study provides a novel method to control electronic properties at metal-graphite interface which is useful in graphene electronic devices and catalysis on support.
- Published
- 2019
18. Growth model for high-Al containing CVD TiAlN coatings on cemented carbides using intermediate layers of TiN.
- Author
-
Ben Hassine, Mohamed, Andrén, Hans-Olof, Iyer, Anand H.S., Lotsari, Antiope, Bäcke, Olof, Stiens, Dirk, Janssen, Wiebke, Manns, Thorsten, Kümmel, Johannes, and Halvarsson, Mats
- Subjects
- *
ENERGY dispersive X-ray spectroscopy , *SCANNING transmission electron microscopy , *ELECTRON microscope techniques , *SURFACE coatings , *TIN - Abstract
This work concerns high Al-containing Ti x Al 1-x N coatings prepared using low pressure-chemical vapour deposition (LP-CVD). The coatings were examined using electron microscopy techniques, such as scanning transmission electron microscopy (STEM), energy dispersive X-ray analysis (EDX) and transmission Kikuchi diffraction (TKD). An intermediate TiN-layer with a 〈211〉 texture consisting of twinned, needle-shaped grains influences the subsequent growth of the TiAlN layer. The TiAlN grains were columnar with a texture of 〈211〉. As the grains grow along 〈111〉, with {001} facets, this led to a tilted pyramid surface morphology. The grains developed an internal periodic epitaxial nanolamella structure. The thicknesses were 2 nm for the low (x = 0.6) and 6 nm for the high (x = 0.9) Al-containing lamellae. The TiAlN layer growth could be described by a "two-wing" model, where two TiAlN grains with a twin-related orientation grow on a twinned TiN grain, where the two TiAlN grains gradually switch sides, making the appearance of two wings of columnar grains. In general, this work shows that it should be possible to control the growth of TiAlN layers by controlling the texture and morphology of an intermediate layer, such as TiN. • High Al-containing Ti 1-x Al x N coatings (x = 0.85) deposited using LP-CVD • Pairs of epitaxially grown TiAlN grains form on top of twinned TiN grains. • 〈112〉 texture of TiAlN grains controlled by ⟨112⟩ texture of underlying TiN layer • Columnar TiAlN grew along ⟨111⟩ with {001} facets, leading to tilted pyramid. • {001} Ti 1-x Al x N facets develop an internal periodic nano-lamella structure. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
- View/download PDF
19. A new transition metal trichalcogenide TaNbSe6 with high yield strength.
- Author
-
Xiang, Junxiang, Wang, Zhi, Huang, Meng, Shi, Lei, Yu, Qian, and Xiang, Bin
- Subjects
- *
TRANSITION metals , *MECHANICAL behavior of materials , *TENSILE strength , *YOUNG'S modulus , *TENSILE tests , *TANTALUM - Abstract
Quasi-one-dimensional transition metal trichalcogenides (TMTs) feature many valuable properties that make them promising for future downscaled and flexible electronics. However, research efforts on new TMT family members and the mechanical properties of these materials remain insufficient. In this paper, the tensile strength of a new conductive ternary TMT, TaNbSe 6 , is studied by in situ tensile testing using transmission electron microscopy. Our results reveal that the TaNbSe 6 nanobelts have a Young's modulus of 64.8 GPa and yield strength of 9.2 GPa. This outstanding tensile strength results from the novel structure of TaNbSe 6 , in which the Ta and Nb double prisms appear alternately along the c axis. Our work opens a door for exploring other TMTs and expanding mechanical properties for future applications. • We successfully synthesized a new ternary transition metal trichalcogenides, TaNbSe 6. • A novel orderly structure was interpreted from HRSTEM results of the TaNbSe 6 nanobelts. • High tensile yield strength of 9.2 GPa was demonstrated by in situ TEM test for TaNbSe 6 nanobelts. • This high tensile yield strength is explained by the structure and chemical bonding condition. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
- View/download PDF
20. Synthesis of platinum nanostructures in zeolite mordenite using a solid-state reduction method
- Author
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Quiñones, Leonel, Grazul, John, and Martínez-Iñesta, María M.
- Subjects
- *
NANOSTRUCTURED materials , *PLATINUM , *MORDENITE , *SODIUM borohydride , *CRYSTAL whiskers , *ZEOLITES - Abstract
Abstract: Platinum nanoparticles and nanowires have been synthesized inside zeolite mordenite using a solid-state reduction method. Tetrammine platinum nitrate was introduced into the pores via incipient wetness impregnation and it was reduced using powder sodium borohydride. With this method it was possible to obtain single crystal nanowires along the edges of the zeolite particle. The molar ratio of the reducing agent to platinum atoms was a critical parameter for the formation of either uniform nanoparticles or nanowires. Using a regular aqueous sodium borohydride solution reduction it was not possible to obtain nanowires in this zeolite. To the best of the author''s knowledge this is the first time sodium borohydride in its solid form is used as a reducing agent to form nanostructures and this is also the first time a solid-state method is used to form nanostructures in a zeolite. [Copyright &y& Elsevier]
- Published
- 2009
- Full Text
- View/download PDF
21. Analysis of γ′ Precipitates, Carbides and Nano-Borides in Heat-Treated Ni-Based Superalloy Using SEM, STEM-EDX, and HRSTEM.
- Author
-
Rakoczy, Łukasz, Rutkowski, Bogdan, Grudzień-Rakoczy, Małgorzata, Cygan, Rafał, Ratuszek, Wiktoria, and Zielińska-Lipiec, Anna
- Subjects
- *
NICKEL alloys , *HEAT resistant alloys , *ELECTRON microscope techniques , *CARBIDES , *PHASE transitions , *INVESTMENT casting - Abstract
The microstructure of a René 108 Ni-based superalloy was systematically investigated by X-ray diffraction, light microscopy, energy-dispersive X-ray spectroscopy, and electron microscopy techniques. The material was investment cast in a vacuum and then solution treated (1200 °C-2h) and aged (900 °C-8h). The γ matrix is mainly strengthened by the ordered L12 γ′ phase, with the mean γ/γ′ misfit, δ, +0.6%. The typical dendritic microstructure with considerable microsegregation of the alloying elements is revealed. Dendritic regions consist of secondary and tertiary γ′ precipitates. At the interface of the matrix with secondary γ′ precipitates, nano M5B3 borides are present. In the interdendritic spaces additionally primary γ′ precipitates, MC and nano M23C6 carbides were detected. The γ′ precipitates are enriched in Al, Ta, Ti, and Hf, while channels of the matrix in Cr and Co. The highest summary concentration of γ′-formers occurs in coarse γ′ surrounding MC carbides. Borides M5B3 contain mostly W, Cr and Mo. All of MC carbides are enriched strongly in Hf and Ta, with the concentration relationship between these and other strong carbide formers depending on the precipitate's morphology. The nano M23C6 carbides enriched in Cr have been formed as a consequence of phase transformation MC + γ → M23C6 + γ′ during the ageing treatment. [ABSTRACT FROM AUTHOR]
- Published
- 2020
- Full Text
- View/download PDF
22. Microstructural Characterisation of Austenitic Heat Resistant Sanicro 25 Steel after Steam Oxidation.
- Author
-
Rutkowski, Bogdan
- Subjects
- *
HEAT resistant steel , *SCANNING electron microscopy techniques , *STEEL , *WATER vapor , *HEAT , *OXIDATION , *INTERFACES (Physical sciences) - Abstract
Microstructural and morphological observations of the surface scale on a high Cr and Ni austenitic heat resistant steel oxidised in water vapour at 700 °C are reported. Analysis of microstructure was carried out by analytical techniques of transmission- and scanning electron microscopy. Investigation of M23C6 nucleated at the interface between matrix and the Z-phase precipitates after exposing to high temperature showed semicoherency between M23C6 and the matrix and no coherency with the Z-phase. Plates developed on the oxide scale surface consist of Cr2O3 crystals separated by amorphous SiO2. [ABSTRACT FROM AUTHOR]
- Published
- 2020
- Full Text
- View/download PDF
23. Interfacial atomic structure analysis at sub-angstrom resolution using aberration-corrected STEM
- Author
-
Hsiao, Chien-Nan, Kuo, Shou-Yi, Lai, Fang-I, and Chen, Wei-Chun
- Published
- 2014
- Full Text
- View/download PDF
24. Atomically resolved microscopy of ion implantation induced dislocation loops in 4H-SiC
- Author
-
Anders Hallén, Jens Birch, Lennart Karlsson, Per Persson, and Lars Hultman
- Subjects
Materials science ,Annealing (metallurgy) ,02 engineering and technology ,01 natural sciences ,Inorganic Chemistry ,chemistry.chemical_compound ,stomatognathic system ,Lattice (order) ,0103 physical sciences ,Microscopy ,Silicon carbide ,General Materials Science ,Ion implantation ,HRSTEM ,Dislocation loop ,010302 applied physics ,Oorganisk kemi ,Condensed matter physics ,Dopant ,Mechanical Engineering ,Bilayer ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Crystallography ,chemistry ,Mechanics of Materials ,0210 nano-technology ,Stacking fault - Abstract
During high temperature electrical activation of ion-implanted dopant species in SiC, extrinsic dislocation loops are formed on the basal planes of the SiC lattice. Investigations have suggested Si-based loops are caused in accordance with the well-known +1 model. Herein we apply aberration corrected STEM to resolve the atomic structure of these loops. It is shown that the dislocation loops formed during annealing of Al-implanted SiC consist of an extra inserted Si-C bilayer of the (0001) polar sense, which upon insertion into the lattice causes a local extrinsic stacking fault. The +1 model thus needs to be expanded for binary systems. (C) 2016 Elsevier B.V. All rights reserved. Funding Agencies|Swedish Research Council [621-2012-4359, 622-2008-405]
- Published
- 2016
25. Atomically resolved microscopy of ion implantation induced dislocation loops in 4H-SiC
- Author
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Karlsson, L. H., Hallen, Anders, Birch, J., Hultman, L., Persson, P. O. A., Karlsson, L. H., Hallen, Anders, Birch, J., Hultman, L., and Persson, P. O. A.
- Abstract
During high temperature electrical activation of ion-implanted dopant species in SiC, extrinsic dislocation loops are formed on the basal planes of the SiC lattice. Investigations have suggested Si-based loops are caused in accordance with the well-known +1 model. Herein we apply aberration corrected STEM to resolve the atomic structure of these loops. It is shown that the dislocation loops formed during annealing of Al-implanted SiC consist of an extra inserted Si-C bilayer of the (0001) polar sense, which upon insertion into the lattice causes a local extrinsic stacking fault. The +1 model thus needs to be expanded for binary systems. (C) 2016 Elsevier B.V. All rights reserved., QC 20161007
- Published
- 2016
- Full Text
- View/download PDF
26. Assessment of a nanocrystal 3-D morphology by the analysis of single HAADF-HRSTEM images
- Author
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Stroppa, Daniel G, Righetto, Ricardo D, Montoro, Luciano A, Houben, Lothar, Barthel, Juri, Cordeiro, Marco AL, Leite, Edson R, Weng, Weihao, Kiely, Christopher J, and Ramirez, Antonio J
- Published
- 2013
- Full Text
- View/download PDF
27. Interfacial atomic structure analysis at sub-angstrom resolution using aberration-corrected STEM
- Author
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Fang-I Lai, Wei-Chun Chen, Shou-Yi Kuo, and Chien-Nan Hsiao
- Subjects
Z contrast ,HRTEM ,HRSTEM ,HAADF ,EELS ,Materials science ,Silicon ,Physics::Instrumentation and Detectors ,chemistry.chemical_element ,Substrate (electronics) ,Epitaxy ,Aberration correction ,EDS ,Materials Science(all) ,General Materials Science ,High-resolution transmission electron microscopy ,Nano Express ,business.industry ,Resolution (electron density) ,Condensed Matter Physics ,Crystallography ,chemistry ,Electron optics ,Optoelectronics ,business ,Single crystal ,Molecular beam epitaxy - Abstract
The atomic structure of a SiGe/Si epitaxial interface grown via molecular beam epitaxy on a single crystal silicon substrate was investigated using an aberration-corrected scanning transmittance electron microscope equipped with a high-angle annular dark-field detector and an energy-dispersive spectrometer. The accuracy required for compensation of the various residual aberration coefficients to achieve sub-angstrom resolution with the electron optics system was also evaluated. It was found that the interfacial layer was composed of a silicon single crystal, connected coherently to epitaxial SiGe nanolaminates. In addition, the distance between the dumbbell structures of the Si and Ge atoms was approximately 0.136 nm at the SiGe/Si interface in the [110] orientation. The corresponding fast Fourier transform exhibited a sub-angstrom scale point resolution of 0.78 Å. Furthermore, the relative positions of the atoms in the chemical composition line scan signals could be directly interpreted from the corresponding incoherent high-angle annular dark-field image.
- Published
- 2014
- Full Text
- View/download PDF
28. Assessment of a nanocrystal 3-D morphology by the analysis of single HAADF-HRSTEM images
- Author
-
Lothar Houben, Weihao Weng, L. A. Montoro, Christopher J. Kiely, Antonio J. Ramirez, Marco Al Cordeiro, Daniel G. Stroppa, Juri Barthel, Ricardo D. Righetto, and Edson R. Leite
- Subjects
Materials science ,HAADF ,HRSTEM ,Nano Express ,business.industry ,Nanochemistry ,Nanotechnology ,Nanocrystal modeling ,Crystal structure ,Condensed Matter Physics ,Nanocrystalline material ,Characterization (materials science) ,Optics ,Nanocrystal ,Materials Science(all) ,Atom ,Scanning transmission electron microscopy ,General Materials Science ,Tomography ,business ,3-D morphology ,ddc:600 - Abstract
This work presents the morphological characterization of CeO2 nanocrystals by the analysis of single unfiltered high-angle annular dark-field (HAADF)-high-resolution scanning transmission electron microscopy (HRSTEM) images. The thickness of each individual atomic column is estimated by the classification of its HAADF integrated intensity using a Gaussian mixture model. The resulting thickness maps obtained from two example nanocrystals with distinct morphology were analyzed with aid of the symmetry from the CeO2 crystallographic structure, providing an approximation for their 3-D morphology with high spatial resolution. A confidence level of ±1 atom per atomic column along the viewing direction on the thickness estimation is indicated by the use of multislice image simulation. The described characterization procedure stands out as a simple approach for retrieving morphological parameters of individual nanocrystals, such as volume and specific surface areas for different crystalline planes. The procedure is an alternative to the tilt-series tomography technique for a number of nanocrystalline systems, since its application does not require the acquisition of multiple images from the same nanocrystal along different zone axes.
- Published
- 2013
- Full Text
- View/download PDF
29. Propriétés structurales, optiques et électroniques des couches d'InN et hétérostructures riches en indium pour applications optoélectroniques
- Author
-
Mutta, G. R., Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Caen, Pierre Ruterana(pierre.ruterana@ensicaen.fr), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), and Ruterana, Pierre
- Subjects
bulk electrical conduction ,HRTEM ,PAMBE ,HRSTEM ,conduction électrique en volume ,puits quantique ,MBE ,InGaN ,InN ,fluctuations de composition ,low frequency noise ,STEM ,bruit basse fréquence ,[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,GaN ,MOVPE ,quantum wells ,In compositional fluctuations ,TEM ,MET ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] - Abstract
The nitride semiconductors (AlN, GaN, InN) are subject to a large research effort due to their numerous applications, such as light emitting diodes, high power and high frequency components. The aim of this work has been twofold: to investigate the electrical conduction in InN layers and the origin of the high emission efficiency in InGaN/GaN Quantum Wells (QWs). The surface electron accumulation in InN layers is still an important limitation to device applications. We have explored this point using low frequency noise measurements on Plasma Assisted Molecular Beam Epitaxy (PAMBE) InN layers and we demonstrated that the bulk electrical conductivity of InN can be accessed. The investigation of quantum wells produced by Molecular Beam Epitaxy (MBE) or Metalorganic Vapour Phase Epitaxy (MOVPE), has been carried out through microstructural analyses by Transmission Electron Microscopy techniques(TEM, HRTEM, STEM) in correlation with optical properties on a large number of samples grown in different growth conditions. This experimental work has allowed us to obtain a critical view on the role of the growth conditions and such parameters as the well morphology, composition fluctuations, as well as the V shaped defects on the current explanations of high emission efficiency in InGaN/GaN QWs., Les semi-conducteurs nitrures (AlN, GaN, InN) focalisent une activité de recherche intense en raison de nombreuses applications comme les diodes électroluminescentes, les composants de puissance ou hyperfréquence. Dans cette recherche, nous avons abordé le travail sous deux angles: a) la conduction électrique dans les couches d'InN produites par croissance épitaxiale aux jets moléculaires assistée par plasma (PAMBE) et une recherche sur l'origine de la forte émission bleue dans les puits de quantiques d'InGaN/GaN. L'accumulation d'électron en surface dans les couches d'InN constitue une limitation importante pour la fabrication de composants. Au cours de ce travail, nous avons exploré l'utilisation des mesures de bruit de basse fréquence sur les couches d'InN et pu accéder à leur conductivité électrique en volume. L'étude des puits quantiques d'InGaN/GaN, obtenue par croissance épitaxiale aux jets moléculaires (MBE) ou épitaxie en phase vapeurs aux organométalliques (MOVPE) , a été effectuée par analyses de la microstructure par microscopie électronique en transmission (MET, HRTEM et STEM) en corrélation avec les propriétés optiques d'un grand nombre d'échantillons provenant de conditions de croissance différentes. Ce travail nous a permis d'acquérir une vision plus critique du rôle des conditions de fabrication et des paramètres comme la morphologie, les fluctuations de composition et la présence des défauts en V sur les explications actuellement avancées pour la forte efficacité d'émission dans les puits quantiques d' InGaN/GaN.
- Published
- 2012
30. Structural, optical and electronic properties of InN thinfilms and In alloys
- Author
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Mutta, Geeta Rani, Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Université de Caen, Pierre RUTERANA, Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Référent, Greyc
- Subjects
bulk electrical conduction ,HRTEM ,puits quantique ,conduction électrique en volume ,PAMBE ,HRSTEM ,MBE ,InGaN ,InN ,[SPI.ELEC] Engineering Sciences [physics]/Electromagnetism ,fluctuations de composition ,low frequency noise ,bruit basse fréquence ,STEM ,[SPI.TRON] Engineering Sciences [physics]/Electronics ,GaN ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,MOVPE ,[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism ,quantum wells ,In compositional fluctuations ,TEM ,MET - Abstract
The nitride semiconductors (AlN, GaN, InN) are subject to a large research effort due to their numerous applications, such as light emitting diodes, high power and high frequency components. The aim of this work has been twofold: to investigate the electrical conduction in InN layers and the origin of the high emission efficiency in InGaN/GaN Quantum Wells (QWs).The surface electron accumulation in InN layers is still an important limitation to device applications. We have explored this point using low frequency noise measurements on Plasma Assisted Molecular Beam Epitaxy (PAMBE) InN layers and we demonstrated that the bulk electrical conductivity of InN can be accessed.The investigation of quantum wells produced by Molecular Beam Epitaxy (MBE) or Metalorganic Vapour Phase Epitaxy (MOVPE), has been carried out through microstructural analyses by Transmission Electron Microscopy techniques(TEM, HRTEM, STEM) in correlation with optical properties on a large number of samples grown in different growth conditions. This experimental work has allowed us to obtain a critical view on the role of the growth conditions and such parameters as the well morphology, composition fluctuations, as well as the V shaped defects on the current explanations of high emission efficiency in InGaN/GaN QWs., Les semi-conducteurs nitrures (AlN, GaN, InN) focalisent une activité de recherche intense en raison de nombreuses applications comme les diodes électroluminescentes, les composants de puissance ou hyperfréquence. Dans cette recherche, nous avons abordé le travail sous deux angles: a) la conduction électrique dans les couches d'InN produites par croissance épitaxiale aux jets moléculaires assistée par plasma (PAMBE) et une recherche sur l'origine de la forte émission bleue dans les puits de quantiques d'InGaN/GaN.L'accumulation d'électron en surface dans les couches d'InN constitue une limitation importante pour la fabrication de composants. Au cours de ce travail, nous avons exploré l'utilisation des mesures de bruit de basse fréquence sur les couches d'InN et pu accéder à leur conductivité électrique en volume.L'étude des puits quantiques d'InGaN/GaN, obtenue par croissance épitaxiale aux jets moléculaires (MBE) ou épitaxie en phase vapeurs aux organométalliques (MOVPE) , a été effectuée par analyses de la microstructure par microscopie électronique en transmission (MET, HRTEM et STEM) en corrélation avec les propriétés optiques d'un grand nombre d'échantillons provenant de conditions de croissance différentes. Ce travail nous a permis d'acquérir une vision plus critique du rôle des conditions de fabrication et des paramètres comme la morphologie, les fluctuations de composition et la présence des défauts en V sur les explications actuellement avancées pour la forte efficacité d'émission dans les puits quantiques d' InGaN/GaN.
- Published
- 2012
31. 2D atomic mapping of oxidation states in transition metal oxides by scanning transmission electron microscopy and electron energy-loss spectroscopy
- Author
-
Haiyan Tan, Emrah Yücelen, Jo Verbeeck, Stuart Turner, and Gustaaf Van Tendeloo
- Subjects
010302 applied physics ,Materials science ,Valence (chemistry) ,EELS ,HRSTEM ,Electron energy loss spectroscopy ,Physics ,General Physics and Astronomy ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Charge ordering ,Condensed Matter::Materials Science ,Transition metal ,Chemical physics ,0103 physical sciences ,Scanning transmission electron microscopy ,Physics::Atomic and Molecular Clusters ,Energy filtered transmission electron microscopy ,Atomic physics ,0210 nano-technology ,High-resolution transmission electron microscopy ,Valence electron - Abstract
Using a combination of high-angle annular dark-field scanning transmission electron microscopy and atomically resolved electron energy-loss spectroscopy in an aberration-corrected transmission electron microscope we demonstrate the possibility of 2D atom by atom valence mapping in the mixed valence compound Mn3O4. The Mn L2,3 energy-loss near-edge structures from Mn2+ and Mn3+ cation sites are similar to those of MnO and Mn2O3 references. Comparison with simulations shows that even though a local interpretation is valid here, intermixing of the inelastic signal plays a significant role. This type of experiment should be applicable to challenging topics in materials science, such as the investigation of charge ordering or single atom column oxidation states in, e.g., dislocations.
- Published
- 2011
32. 2D atomic mapping of oxidation states in transition metal oxides by scanning transmission electron microscopy and electron energy-loss spectroscopy
- Author
-
Tan, H. (author), Turner, S. (author), Yücelen, E. (author), Verbeeck, J. (author), Van Tendeloo, G. (author), Tan, H. (author), Turner, S. (author), Yücelen, E. (author), Verbeeck, J. (author), and Van Tendeloo, G. (author)
- Abstract
Using a combination of HAADF-STEM imaging and atomically resolved EELS in an aberration-corrected TEM we demonstrate the possibility of 2D atom by atom valence mapping in the mixed valence compound . The ELNES from and cation sites are similar to those of and references. Comparison with simulations shows that even though a local interpretation is valid here, intermixing of the inelastic signal plays a significant role. This type of experiments should be applicable to challenging topics in materials science, like the investigation of charge ordering or single atom column oxidation states in e.g. dislocations., Kavli Institute of Nanoscience Delft, Applied Sciences
- Published
- 2011
- Full Text
- View/download PDF
33. Controlling Structural Anisotropy of Anisotropic 2D Layers in Pseudo-1D/2D Material Heterojunctions.
- Author
-
Chen B, Wu K, Suslu A, Yang S, Cai H, Yano A, Soignard E, Aoki T, March K, Shen Y, and Tongay S
- Abstract
Chemical vapor deposition and growth dynamics of highly anisotropic 2D lateral heterojunctions between pseudo-1D ReS
2 and isotropic WS2 monolayers are reported for the first time. Constituent ReS2 and WS2 layers have vastly different atomic structure, crystallizing in anisotropic 1T' and isotropic 2H phases, respectively. Through high-resolution scanning transmission electron microscopy, electron energy loss spectroscopy, and angle-resolved Raman spectroscopy, this study is able to provide the very first atomic look at intimate interfaces between these dissimilar 2D materials. Surprisingly, the results reveal that ReS2 lateral heterojunctions to WS2 produce well-oriented (highly anisotropic) Re-chains perpendicular to WS2 edges. When vertically stacked, Re-chains orient themselves along the WS2 zigzag direction, and consequently, Re-chains exhibit six-fold rotation, resulting in loss of macroscopic scale anisotropy. The degree of anisotropy of ReS2 on WS2 largely depends on the domain size, and decreases for increasing domain size due to randomization of Re-chains and formation of ReS2 subdomains. Present work establishes the growth dynamics of atomic junctions between novel anisotropic/isotropic 2D materials, and overall results mark the very first demonstration of control over anisotropy direction, which is a significant leap forward for large-scale nanomanufacturing of anisotropic systems., (© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)- Published
- 2017
- Full Text
- View/download PDF
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