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1. GaSb-based tapered diode lasers at 1.93 µm with 1.5-W nearly diffraction-limited power

Author

Pfahler, C., Kaufel, G., Kelemen, M.T., Mikulla, M., Rattunde, M., Schmitz, J., Wagner, J., and Publica

Subjects
high brightness, GaSb, AlGaAsSb, molecular beam epitaxy, mittleres Infrarot, Halbleiterlaser, hochbrillant, Molekularstrahlepitaxie, GaInAsSb, mid-infrared, Trapezlaser, semiconductor laser, tapered laser
Abstract

High-power high-brightness 1.93-µm wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A nearly diffraction-limited continuous-wave output power of 1.5 W together with a remarkable low fast axis divergence of 43° full-width at half-maximum have been demonstrated. The maximum brightness amounts to 32 MW/cm2 sr.

Published
2006

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