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We present a 940 nm quasi-continuous wave semiconductor laser designed as a building block for high-power fiber coupled pump modules. The laser comprises a $400~\mathrm{\mu} \mathrm{m} $ narrow-stripe array mounted on an aluminum nitride substrate using hard solder. The chip has been optimized for high optical power and low lateral far-field angles. Two vertical and six lateral structure variations have been investigated to determine the best achievable performance. Operating at 1 ms pulse width and a repetition rate of 10 Hz, the laser device reaches a maximum pulse power of 86 W from a $400~\mathrm{\mu} \mathrm{m} $ aperture and more than 62% maximum conversion efficiency. Low lateral far-field angles (95% power enclosed) of 11.5° and 13.5°, depending on the epitaxial design, enable efficient multimode fiber coupling. The potential for highly reliable applications has been demonstrated.

High-power 2.3-μm In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-μm-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 μs/300 Hz) at a heatsink temperature of 18°C. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency was about 50%. Individual laser differential gain with respect to current was about twice as high as in InP-based laser heterostructures, demonstrating the potential of GaSb-based material system for high-power CW room-temperature laser diode arrays. [ABSTRACT FROM PUBLISHER]