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In this paper, we focus on the growth of ?- and ?/?-Ga2O3 thin films via metal-organic vapor phase epitaxy on c-plane sapphire using water and trimethyl-gallium at temperatures between 610 and 650 °C. Using these precursors, the monoclinic ?-phase is usually obtained only at temperatures higher than 700 °C. We show here, for the first time, that both ?- and ?-Ga2O3 can also be obtained by tuning the growth rate of the film, that is, by controlling the supersaturation of the vapor phase. The experimental findings are discussed in the framework of classical nucleation theory and Ostwald's step rule, showing the interplay of thermodynamic (related to different chemical potentials for the metastable ?/? phase and the stable ? phase) and kinetic effects (mainly related to different surface energy barriers for nuclei of different crystallographic phases/ planes). The experimental conditions that permit the nucleation and growth of the desired Ga2O3 polymorph are identified and thoroughly explained, giving to this work a fundamental as well as a technological relevance.

The good control of the n-type doping is a key issue for the fabrication of efficient devices based on e-Ga2O3 epilayers. In this work we studied the possibility of doping the e-Ga2O3 thin films, epitaxially grown on c-oriented sapphire by metal-organic chemical vapor deposition, by means of a post-deposition treatment. For the first time, the n-type doping was achieved by depositing a tin-rich SnO2 film on top of the e-Ga2O3 layer and keeping this bi-layer system for 4 h at a temperature of 600 °C in an evacuated furnace. The diffusion of Sn atoms into the e-Ga2O3 film is evidenced by time-of-flight secondary-ion mass spectrometry depth profiles. Room-temperature resistivity of the order of 1 Ω•cm is obtained and the electrical characterization revealed a conduction mechanism based on variable range hopping, according to the Mott's model.