1. (Ge2S8)100-xTex chalcogenide glasses: Physico-mechanical study for NIR optical devices.
- Author
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Aly, Kamal A., Sati, Dinesh C., Dahshan, A., Sharda, Sunanda, and Sharma, Pankaj
- Subjects
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GLASS transition temperature , *CHALCOGENIDE glass , *OPTOELECTRONIC devices , *OPTICAL devices , *PHOTOCONDUCTIVITY - Abstract
To better understand the variations in physical, mechanical, and electrical properties, (Ge 2 S 8) 100-x Te x chalcogenide glasses have been synthesized. These glasses encompass a composition range of 0 ≤ x ≤ 12. The mechanical properties have been studied by determining the longitudinal (ν L) and transverse (ν T) ultrasonic velocities. A network structure evaluation with composition has been performed via parameters like coordination number (< N r >), crosslinking density (D CL), glass transition temperature (T g), etc. Also, the elastic parameters trend values have been associated with the decrease in the cohesive energy value of the system. An overall physical analysis of the Ge-S-Te systems reveals that the system's rigidity and the cross-linking density are decreasing. Within the temperature range of 300–420 K, the temperature dependency of the dark conductivity and photoconductivity has been investigated. The intensity-dependent photoconductivity is governed by a power law, with intensity (I ph = G δ ) with δ lying between 0.5 and 1. The photosensitivity values reveal that the glassy system may be suitable for applications in optoelectronic devices. A correlation among the parameters has been established by calculating elastic parameters and conductivity measurements and evaluating the network structure theoretically. The present efforts clarify the composition-structure dependence and relationship in the Ge-S-Te glass series. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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