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Aims: Suboptimal device programming is frequent in non‐responders to cardiac resynchronization therapy (CRT). However, the role of device optimization and the most appropriate technique are still unknown. The aim of our study was to analyse the effect of different CRT optimization techniques within a network meta‐analysis. Methods: A systematic search was conducted on MEDLINE, Embase and CENTRAL for studies comparing outcomes with empirical device settings or optimization using echocardiography, static algorithms or dynamic algorithms. Studies investigating the effect of optimization in non‐responders were also analysed. Results: A total of 17 studies with 4346 patients were included in the quantitative analysis. Of the treatments and outcomes examined, a significant difference was found only between dynamic algorithms and echocardiography, with the former leading to a higher echocardiographic response rate [odds ratio (OR): 2.02, 95% confidence interval (CI) 1.21–3.35], lower heart failure hospitalization rate (OR: 0.75, 95% CI 0.57–0.99) and greater improvement in 6‐minute walk test [mean difference (MD): 45.52 m, 95% credible interval (CrI) 3.91–82.44 m]. We found no significant difference between empirical settings, static algorithms and dynamic algorithms. Seven studies with 228 patients reported response rates after optimization in non‐responders. Altogether, 34.3%–66.7% of initial non‐responders showed improvement after optimization, depending on response criteria. Conclusions: At the time of CRT implantation, dynamic algorithms may serve as a resource‐friendly alternative to echocardiographic optimization, with similar or better mid‐term outcomes. However, their superiority over empirical device settings needs to be investigated in further trials. For non‐responders, CRT optimization should be considered, as the majority of patients experience improvement. [ABSTRACT FROM AUTHOR]

Abstract Aims Suboptimal device programming is frequent in non‐responders to cardiac resynchronization therapy (CRT). However, the role of device optimization and the most appropriate technique are still unknown. The aim of our study was to analyse the effect of different CRT optimization techniques within a network meta‐analysis. Methods A systematic search was conducted on MEDLINE, Embase and CENTRAL for studies comparing outcomes with empirical device settings or optimization using echocardiography, static algorithms or dynamic algorithms. Studies investigating the effect of optimization in non‐responders were also analysed. Results A total of 17 studies with 4346 patients were included in the quantitative analysis. Of the treatments and outcomes examined, a significant difference was found only between dynamic algorithms and echocardiography, with the former leading to a higher echocardiographic response rate [odds ratio (OR): 2.02, 95% confidence interval (CI) 1.21–3.35], lower heart failure hospitalization rate (OR: 0.75, 95% CI 0.57–0.99) and greater improvement in 6‐minute walk test [mean difference (MD): 45.52 m, 95% credible interval (CrI) 3.91–82.44 m]. We found no significant difference between empirical settings, static algorithms and dynamic algorithms. Seven studies with 228 patients reported response rates after optimization in non‐responders. Altogether, 34.3%–66.7% of initial non‐responders showed improvement after optimization, depending on response criteria. Conclusions At the time of CRT implantation, dynamic algorithms may serve as a resource‐friendly alternative to echocardiographic optimization, with similar or better mid‐term outcomes. However, their superiority over empirical device settings needs to be investigated in further trials. For non‐responders, CRT optimization should be considered, as the majority of patients experience improvement.

In this work, numerical simulation results on SnSe solar cells are presented. The influence of loss mechanisms such as radiative recombination, SnSe bulk recombination, and CdS/SnSe interface recombination on the device is studied in detail under and without the influence of resistances for the first time. In the first step, our model is validated by accurately reproducing the experimental available data. We found that non-radiative recombination originated by SnSe bulk defects in combination with high series resistances are dominant loss mechanisms, resulting in efficiency values lower than 2 %. In addition, the important role of the CdS/SnSe interface is also evidenced, since SnSe solar cells without bulk defects and resistances would not be able to overcome the efficiency barrier of 10 % because of the cliff-like band alignment. The role of each loss mechanism on SnSe solar cell performance was studied as a function of material thicknesses, carrier concentrations, bulk and interface defects, and resistances for device optimization. We demonstrated that conversion efficiency of 21.8 % with an open-circuit voltage, short-circuit current density, and fill factor values of 0.82 V, 31.6 mA/cm2, 84.6 %, respectively can be achieved in the optimized device under the standard conditions of AM 1.5G illumination and 300 K.

Abstract The Schockley–Quisser (SQ) limit of 28.64% is distant from the Sb2S3 solar cells’ record power conversion efficiency (PCE), which is 8.00%. Such poor efficiency is mostly owing to substantial interface-induced recombination losses caused by defects at the interfaces and misaligned energy levels. The endeavor of this study is to investigate an efficient Sb2S3 solar cell structure via accurate analytical modeling. The proposed model considers different recombination mechanisms such as non-radiative recombination, Sb2S3/CdS interface recombination, Auger, SRH, tunneling-enhanced recombination, and their combined impact on solar cell performance. This model is verified against experimental work (Glass/ITO/CdS/Sb2S3/Au) where a good coincidence is achieved. Several parameters effects such as thickness, doping, electronic affinity, and bandgap are scrutinized. The effect of both bulk traps located in CdS and Sb2S3 on the electrical outputs of the solar cell is analyzed thoroughly. Besides, a deep insight into the effect of interfacial traps on solar cell figures of merits is gained through shedding light into their relation with carriers’ minority lifetime, diffusion length, and surface recombination velocity. Our research findings illuminate that the primary contributors to Sb2S3 degradation are interfacial traps and series resistance. Furthermore, achieving optimal band alignment by fine-tuning the electron affinity of CdS to create a Spike-like conformation is crucial for enhancing the immunity of the device versus the interfacial traps. In our study, the optimized solar cell configuration (Glass/ITO/CdS/Sb2S3/Au) demonstrates remarkable performance, including a high short-circuit current (J SC ) of 47.9 mA/cm2, an open-circuit voltage (V OC ) of 1.16 V, a fill factor (FF) of 54%, and a notable improvement in conversion efficiency by approximately 30% compared to conventional solar cells. Beyond its superior performance, the optimized Sb2S3 solar cell also exhibits enhanced reliability in mitigating interfacial traps at the CdS/Sb2S3 junction. This improved reliability can be attributed to our precise control of band alignment and the fine-tuning of influencing parameters.

The Schockley–Quisser (SQ) limit of 28.64% is distant from the Sb2S3 solar cells' record power conversion efficiency (PCE), which is 8.00%. Such poor efficiency is mostly owing to substantial interface-induced recombination losses caused by defects at the interfaces and misaligned energy levels. The endeavor of this study is to investigate an efficient Sb2S3 solar cell structure via accurate analytical modeling. The proposed model considers different recombination mechanisms such as non-radiative recombination, Sb2S3/CdS interface recombination, Auger, SRH, tunneling-enhanced recombination, and their combined impact on solar cell performance. This model is verified against experimental work (Glass/ITO/CdS/Sb2S3/Au) where a good coincidence is achieved. Several parameters effects such as thickness, doping, electronic affinity, and bandgap are scrutinized. The effect of both bulk traps located in CdS and Sb2S3 on the electrical outputs of the solar cell is analyzed thoroughly. Besides, a deep insight into the effect of interfacial traps on solar cell figures of merits is gained through shedding light into their relation with carriers' minority lifetime, diffusion length, and surface recombination velocity. Our research findings illuminate that the primary contributors to Sb2S3 degradation are interfacial traps and series resistance. Furthermore, achieving optimal band alignment by fine-tuning the electron affinity of CdS to create a Spike-like conformation is crucial for enhancing the immunity of the device versus the interfacial traps. In our study, the optimized solar cell configuration (Glass/ITO/CdS/Sb2S3/Au) demonstrates remarkable performance, including a high short-circuit current (JSC) of 47.9 mA/cm2, an open-circuit voltage (VOC) of 1.16 V, a fill factor (FF) of 54%, and a notable improvement in conversion efficiency by approximately 30% compared to conventional solar cells. Beyond its superior performance, the optimized Sb2S3 solar cell also exhibits enhanced reliability in mitigating interfacial traps at the CdS/Sb2S3 junction. This improved reliability can be attributed to our precise control of band alignment and the fine-tuning of influencing parameters. [ABSTRACT FROM AUTHOR]

Charge balance is one of the most important factors for realizing high performance organic light emitting devices (OLEDs). In this work, we provide a novel strategy to improve the charge balance in OLEDs by optimizing the hole injection layer (HIL) as well as the electron transporting layer (ETL) and thereby controlling the charge carrier supplies in the device. First, we develop a p‐dopant material (PD02), with a lowest unoccupied molecular orbit (LUMO) of −4.63 eV, much shallower than that of the commercial material (PD01) of which the LUMO is −5.04 eV. Nevertheless, this enables us to modulate the supply of holes to the emissive layer through tuning doping concentration. We demonstrate that device performances are significantly improved by employing such a scheme. With a 23% molar doping of PD02, a bottom emission red OLED achieves an external quantum efficiency (EQE) of over 30%, an operating voltage of 3.4 V and a LT95 ~15,000 h at 10 mA/cm2, with a Digital Cinema Initiative P3 (DCI‐P3) chromaticity of CIE (X, Y) = (0.68, 0.32). Moreover, the efficiency roll‐off is suppressed up till ~3500 cd/m2, a desirable feature in display applications. The lateral conductivity of by using such HIL is also found to be much lower than that of PD01, resulting in reduced crosstalk among RGB pixels. Next, a new electron transporting material (ETM‐02) with a deep LUMO of −2.86 eV is also introduced to further optimize the charge balance. Although devices with ETM‐02 shows lower voltage and higher EQE, lifetime is compromised. In order to improve lifetime, additional fine tuning of the charge balance is essential. Finally, a second p‐dopant PD03 with a LUMO of −4.91 eV is added to the HIL to further extend the modulation flexibility in the hole injection. A double‐layer HIL consisting of 8 nm of HTM:16% PD02 and 2 nm of HTM:3% PD03, where the former is in contact with anode, is adopted in the device structure. The bottom emission deep red device achieve EQE over 30%, an operating voltage of 3.2 V and an improved LT95 ~13,000 h at 10 mA/cm2 with a BT.2020 range chromaticity of CIE (X, Y) = (0.701, 0.299). In the double HIL configuration, the introduction of PD03 provides one more parameter for tuning and therefore improves the overall device performances. [ABSTRACT FROM AUTHOR]

Huge advancements in the understanding of photovoltaic (PV) physics have been made, but still, PV has not overtaken conventional energy sources due to PV materials cost, toxicity, and stability concerns. In the pursuit of discovering a new solar energy harvester which satisfies criteria such as low cost, earth-abundance, non-toxicity, high efficiency and long-term stability, extensive research has been conducted on the potential of copper iron oxide (CuFeO2), also known as delafossite oxide. CuFeO2 possesses optimal bandgap (1.5 eV), with a high absorption coefficient and carrier mobility, suitable for potentially cost-effective solar cells. Theoretical modelling based on the optical and electrical characteristics of the CuFeO2 system is performed here on delafossite CuFeO2 to examine its photovoltaic performance. We explored various buffer counterparts for CuFeO2 absorber, and a stack of p–n+–n++is simulated for device optimization. ZnO showed zero conduction band offset with CuFeO2 and a corresponding efficiency of 28% for CuFeO2/ZnO/ITO (p–n+–n++) device. The optimal range of crucial design parameters, such as doping profile, absorber thickness, surface recombination velocity, back contact work function, resistances, and bulk defects, that allow CuFeO2 solar cells to reach power conversion efficiencies above 25% are quantified. The spectrum loss (thermalization and non-absorption loss) stands at 59.6%, extrinsic recombination loss at 12.3%, and the performance ceiling of CuFeO2 at 28.1%. Theoretical analysis shows that the maximum achievable efficiency of 28% is close to the Shockley–Queisser (S–Q) limit and comparable to contemporary inorganic solar cells. The findings presented in this study are anticipated to stimulate experimentalists to fabricate stable, high-efficiency CuFeO2-based thin film solar cells. [ABSTRACT FROM AUTHOR]

Huge advancements in the understanding of photovoltaic (PV) physics have been made, but still, PV has not overtaken conventional energy sources due to PV materials cost, toxicity, and stability concerns. In the pursuit of discovering a new solar energy harvester which satisfies criteria such as low cost, earth-abundance, non-toxicity, high efficiency and long-term stability, extensive research has been conducted on the potential of copper iron oxide (CuFeO2), also known as delafossite oxide. CuFeO2 possesses optimal bandgap (1.5 eV), with a high absorption coefficient and carrier mobility, suitable for potentially cost-effective solar cells. Theoretical modelling based on the optical and electrical characteristics of the CuFeO2 system is performed here on delafossite CuFeO2 to examine its photovoltaic performance. We explored various buffer counterparts for CuFeO2 absorber, and a stack of p–n+–n++is simulated for device optimization. ZnO showed zero conduction band offset with CuFeO2 and a corresponding efficiency of 28% for CuFeO2/ZnO/ITO (p–n+–n++) device. The optimal range of crucial design parameters, such as doping profile, absorber thickness, surface recombination velocity, back contact work function, resistances, and bulk defects, that allow CuFeO2 solar cells to reach power conversion efficiencies above 25% are quantified. The spectrum loss (thermalization and non-absorption loss) stands at 59.6%, extrinsic recombination loss at 12.3%, and the performance ceiling of CuFeO2 at 28.1%. Theoretical analysis shows that the maximum achievable efficiency of 28% is close to the Shockley–Queisser (S–Q) limit and comparable to contemporary inorganic solar cells. The findings presented in this study are anticipated to stimulate experimentalists to fabricate stable, high-efficiency CuFeO2-based thin film solar cells. [ABSTRACT FROM AUTHOR]

A large efficiency improvement, ≈4.5 times, in a solar cell based on earth‐abundant low‐cost SnS absorber with configuration glass/Mo/SnS/CdS/i‐ZnO/AZO/Al is reported in sharp contrast to prior experimental reports in the literature. Efficiency enhancement is attributed to tailored design at the absorber/buffer interface implemented via two‐step design modification vis‐à‐vis experimental benchmark. Design tailoring using simulation comprises substitution of sulfur composition in SnS by Se followed by replacing CdS buffer layer with wide bandgap, nontoxic Zn (O, S). The effect of sulfur composition variation by Se (i.e., SnS1−xSex) indicates an optimal Se mole fraction (x = 0.4) exhibiting maximum efficiency. In addition, optimization of the thickness, carrier density, and bulk defect density of the SnS1−xSex absorber result in an improved design. Replacing CdS buffer layer by ZnO1−ySy in SnS absorber‐based solar cell results in substantial improvement in device parameters; open circuit voltage (VOC) of ≈86% and current density (JSC) of ≈78% due to optimal band alignment at the SnS1−xSex/ZnO1−ySy heterojunction. It occurs when the sulfur mole fraction is 60% in the absorber layer and 70% in the buffer layer causing efficiency to rise to ≈17.87%. An optimal design comprising all the parameters including metal back contact work function, series and shunt resistance deliver an efficiency of ≈19.2%. [ABSTRACT FROM AUTHOR]

Background: We aimed to evaluate if optimization by maximizing QRS duration (QRSd) reduction is feasible in an all-comer cardiac resynchronization therapy (CRT) population, and if reduced, QRSd is associated with a better clinical outcome. Methods: Patients with LBBB receiving CRT implants during the period 2015–2020 were retrospectively evaluated. Implants from 2015–2017 were designated as controls. Starting from 2018, an active 12-lead electrogram-based optimization of QRSd reduction was implemented (intervention group). QRSd reduction was evaluated in a structured way at various device AV and VV settings, aiming to maximize the reduction. The primary endpoint was a composite of heart failure hospitalization or death from any cause. Results: A total of 254 patients were followed for up to 6 years (median 2.9 [1.8–4.1]), during which 82 patients (32%) reached the primary endpoint; 53 deaths (21%) and 58 (23%) heart failure hospitalizations. Median QRS duration pre-implant was 162 ms [150–174] and post-implant 146ms [132–160]. Mean reduction in QRS duration was progressively larger for each year during the intervention period, ranging from − 9.5ms in the control group to − 24 in the year 2020 (p = 0.005). QRS reduction > 14 ms (median value) was associated with a lower risk of death or heart failure hospitalization (adjusted HR 0.54 [0.29–0.98] (p = 0.04). Conclusions: Implementing a general strategy of CRT device optimization by aiming for shorter QRS duration is feasible in a structured clinical setting and results in larger reductions in QRS duration post-implant. In patients with a larger QRS reduction, compared to those with a smaller QRS reduction, there is an association with a better clinical outcome. [ABSTRACT FROM AUTHOR]

The existing von Neumann architecture for artificial intelligence (AI) computations suffers from excessive power consumption and memory bottlenecks. As an alternative, compute-in-memory (CIM) technology has been emerging. Among various CIM device candidates, split-gate NOR flash offers advantages such as a high density and low on-state current, enabling low-power operation, and benefiting from a high level of technological maturity. To achieve high energy efficiency and high accuracy in CIM inference chips, it is necessary to optimize device design by targeting low power consumption at the device level and surpassing baseline accuracy at the system level. In split-gate NOR flash, significant factors that can cause CIM inference accuracy drop are the device conductance variation, caused by floating gate charge variation, and a low on-off current ratio. Conductance variation generally has a trade-off relationship with the on-current, which greatly affects CIM dynamic power consumption. In this paper, we propose strategies for designing optimal devices by adjusting oxide thickness and other structural parameters. As a result of setting Tox,FG to 13.4 nm, TIPO to 4.6 nm and setting other parameters to optimal points, the design achieves erase on-current below 2 μA, program on-current below 10 pA, and off-current below 1 pA, while maintaining an inference accuracy of over 92%. [ABSTRACT FROM AUTHOR]

A machine learning (ML) method was used to optimize the trap distribution of the charge trap nitride (CTN) to simultaneously improve its performance/reliability (P/R) characteristics, which are tradeoffs in 3-D NAND flash memories. Using an artificial neural network (ANN), we modeled the relationship between trap distributions and P/R characteristics. The ANN was trained using a large experimentally-calibrated technology computer-aided design (TCAD) simulation dataset. The gradient descent method was adapted to optimize the trap distribution, achieving the best P/R characteristics based on the well-trained ANN. Eventually, we found the best trap profile distributed in both space and energy. In particular, the energetic trap distribution had a larger impact on the P/R characteristics than that of the spatial trap distribution. Furthermore, in terms of the P/R characteristics, it was generally preferable to increase all inputs of the energetic trap distribution. However, the acceptor-like trap energy level ( $E_{TA}$ ) and its standard deviation ( $\sigma _{EA}$ ) caused a tradeoff between P/R characteristics; therefore, ML was used to determine their optimal points. The proposed ML method allows the optimization of trap distribution to obtain the best P/R characteristics rapidly and quantitatively. Our findings could be used as a guideline for determining the physical properties of CTN in 3-D NAND flash cells.

Particle swarm optimization (PSO), genetic algorithm (GA), and nonlinear simplex optimization method (SOM) are some of the most prominent gradient-free optimization algorithms in engineering. When it comes to a common group of electromagnetic optimization problems wherein less than 10 optimization parameters are present in the problem domain, SOM features faster convergence rate vs PSO and GA. Nevertheless, PSO and GA still outperform SOM by having more accuracy in finding the global minimum. To improve the accuracy of SOM in problems with few optimization parameters, a quasi-gradient (Q-G) search direction is added to the conventional algorithm. An extra decision is made by the proposed algorithm to move alongside the reflection or quasi-gradient direction during the error-reduction operations. This modification will improve the accuracy of SOM, which otherwise fails in the examples presented in this article, to levels similar to PSO and GA, while retaining approximately 33% faster convergence speed with relatively small number of parameters, and 20% faster convergence speed with larger number of optimization parameters. Following a standard benchmark test verification, the proposed algorithm successfully solves a suite of electromagnetic optimization problems. Representative examples include the optimization of absorber dimensions in an anechoic chamber, and estimation of the properties of an unknown embedded object by scattered microwave signals.

Quantum dot based luminescent solar concentrators (QDLSCs) are a special class of transparent photovoltaics (TPV), especially suited for building integrated photovoltaics (BIPV). Photons are absorbed by luminescent species in a waveguide and emitted at a red-shifted wavelength. Due to total internal reflection, these photons are absorbed by the solar cells attached to the sides. Successful deployment requires high conversion efficiency and high transparency, which are contradictory requirements. We have performed Monte-Carlo ray tracing simulations to investigate single, double, and triple QDLSCs and have assessed their optical and electrical performance. To this end, eight different semiconductor quantum dot materials have been used with various absorption and emission properties, and Stokes' shift. Device efficiency is analyzed for different average visible transmission (AVT) values, thus considering the human photopic response. The range of luminescent quantum efficiencies (30%–70%) leads to maximum efficiency of 2% for a single QDLSC, 2.4% for a double, and 2.7% for a triple structure, at high transparency and good color rendering index. Further improvements are possible towards > 5% at high transparency with near-unity quantum efficiencies. [Display omitted] • Optimization of conversion efficiency and visual aspects of luminescent solar concentrators. • Nanocrystals are used in single, double, and triple configurations. • Device efficiency and chromaticity aspects need to be optimized in a combined manner. [ABSTRACT FROM AUTHOR]

The latest advances in perovskite solar cells (PSCs) are reported with efficiencies over 25%. PSCs are one of the best developing research-level photovoltaic technologies. To the best of our knowledge, for the first time, we optimize all parameters containing thicknesses, conduction and valence band offset of ETLs (electron transport layers) and hole transport layer, defect densities and doping concentration densities for Cs0.05(FA0.77 MA0.23)0.95Pb(I0.77Br0.23)3. As an absorber layer with numerous stacked ETLs including SnO2/C60, ZnO/C60, TiO2/C60, CdZnS/C60 and CdSe/C60 are used. To find the efficiency, the SCAPS (Solar Cell Capacitance Simulator)-1D program is performed to realize which of stacked ETLs is more appropriate for both cost-effectiveness and high efficiency. After all, the efficiency for stacked SnO2/C60 at 31.16%, stacked ZnO/C60 at 31.22%, stacked TiO2/C60 at 30.55%, stacked CdZnS/C60 at 30.46% and stacked CdSe/C60 at 31.24% are reached. [ABSTRACT FROM AUTHOR]

Introduction: Human-in-the-loop optimization algorithms have proven useful in optimizing complex interactive problems, such as the interaction between humans and robotic exoskeletons. Specifically, this methodology has been proven valid for reducing metabolic cost while wearing robotic exoskeletons. However, many prostheses and orthoses still consist of passive elements that require manual adjustments of settings.Methods: In the present study, we investigated if human-in-the-loop algorithms could guide faster manual adjustments in a procedure similar to fitting a prosthesis. Eight healthy participants wore a prosthesis simulator and walked on a treadmill at 0.8 ms−1 under 16 combinations of shoe heel height and pylon height. A human-in-the-loop optimization algorithm was used to find an optimal combination for reducing the loading rate on the limb contralateral to the prosthesis simulator. To evaluate the performance of the optimization algorithm, we used a convergence criterium. We evaluated the accuracy by comparing it against the optimum from a full sweep of all combinations.Results: In five out of the eight participants, the human-in-the-loop optimization reduced the time taken to find an optimal combination; however, in three participants, the human-in-the-loop optimization either converged by the last iteration or did not converge.Discussion: Findings from this study show that the human-in-the-loop methodology could be helpful in tasks that require manually adjusting an assistive device, such as optimizing an unpowered prosthesis. However, further research is needed to achieve robust performance and evaluate applicability in persons with amputation wearing an actual prosthesis.

We demonstrate improved charge balance in organic light emitting devices (OLEDs) by optimizing the hole injection layer (HIL) to control the hole density through the device. Two novel p‐dopants (PDs), PD02 with a shallow lowest unoccupied molecular orbital (LUMO) at ‐4.63 eV (reported in our previous work) and PD03 with a relatively deep LUMO of ‐4.91 eV were used. A two‐layer HIL consisting of HTM:PD02 and HTM:PD03 introduces new design flexibility to improve charge balance in the light emission layer. Using 16% by mass of PD02 and 3% by mass of PD03, we achieve, (1) a bottom emission deep red device with an external quantum efficiency (EQE) of over 30% at a CIE of (0.701, 0.299), an operating voltage of 3.2 V and LT95~13, 000 h at 10 mA/cm2. In particular, the efficiency roll‐off of this device is greatly reduced, which is highly desirable in the display industry. (2) a top emission deep red device with a current efficiency (CE) of 75 cd/A at a CIE of (0.707, 0.293), an operating voltage of 3.6 V and LT95 over 15, 000 h at 10 mA/cm2. An additional benefit from this novel dual p‐doped HIL approach is its much lower lateral conductivity compared to the standard single HIL device structure, resulting in reduced lateral crosstalk between RGB pixels. [ABSTRACT FROM AUTHOR]

Vertical waste heat recovery devices are emerging but are immature. The vertical waste heat recovery devices of circular, square, and optimized designs were analyzed for a full capacity of 8 tons of sintered ore. Using DEM theory, the effects of particle size distribution, velocity, and wall forces on void fraction distribution and particle flow were examined. The circular device demonstrated superior mixed particle flow compared to the square device, achieving integrated flow for 50 % of particles in the cone, in contrast to 26 % for the square device. An optimized circular device achieved integral flow for 90 % of particles, significantly enhancing overall flow and reducing wall adhesion, attributed to its improved internal design. Through insert and distributor design, the overall particle flow within the device improved, with almost no particles remaining on the walls. These findings underscore the potential for enhanced heat recovery efficiency through optimized internal structures in waste heat recovery devices. [Display omitted] • The circular device achieved 50 % overall flow; the square device reached only 26 %. • The optimized design increased overall flow to 90 %, enhancing particle distribution. • Particle impact on the bottom was minimized at a critical stacking height. • Modeling irregular spheres with spherical particles captured realistic flow behavior. • Internal structural optimization enhanced particle flow and reduced wall effects. [ABSTRACT FROM AUTHOR]

• Numerical calculations on SnSe solar cells are presented. • Study of loss mechanisms limiting SnSe solar cells for the first time. • Experimental data reported on SnSe solar cells are reproduced with good agreement. • Defects in SnSe bulk and series resistances have a detrimental role rather than SnSe/CdS interface. • The path for further SnSe solar cell optimization is presented. In this work, numerical simulation results on SnSe solar cells are presented. The influence of loss mechanisms such as radiative recombination, SnSe bulk recombination, and CdS/SnSe interface recombination on the device is studied in detail under and without the influence of resistances for the first time. In the first step, our model is validated by accurately reproducing the experimental available data. We found that non-radiative recombination originated by SnSe bulk defects in combination with high series resistances are dominant loss mechanisms, resulting in efficiency values lower than 2 %. In addition, the important role of the CdS/SnSe interface is also evidenced, since SnSe solar cells without bulk defects and resistances would not be able to overcome the efficiency barrier of 10 % because of the cliff-like band alignment. The role of each loss mechanism on SnSe solar cell performance was studied as a function of material thicknesses, carrier concentrations, bulk and interface defects, and resistances for device optimization. We demonstrated that conversion efficiency of 21.8 % with an open-circuit voltage, short-circuit current density, and fill factor values of 0.82 V, 31.6 mA/cm2, 84.6 %, respectively can be achieved in the optimized device under the standard conditions of AM 1.5G illumination and 300 K. [ABSTRACT FROM AUTHOR]

In this paper, we use numerical simulations to investigate ultrathin Cu (In1−xGax) Se2 solar cells. In the first part, we focus on the cell configuration in which the PV parameters fit and match the fabricated cell characteristics. Our goal is to investigate the impact of different loss mechanisms, such as interface trap density (Dit) and absorber trap density (Nt), in different cell pitch sizes on cell performances. Dit defines the number of carrier traps at CIGS/Al2O3 interfaces to recombine with photogenerated carriers. Nt defines the number of carrier traps in the absorber layer. Recombination through traps has been found to be the primary loss process in the investigated cell. Additional numerical simulations reveal appreciable gains in cell performance for various cell pitch sizes, absorber doping densities, Ga content, and graded bandgap under AM1.5 illumination. Research during the recent decade has clarified that the most promising strategy to achieve maximum efficiency consists of the so-called tandem configuration. Therefore, we here propose a u-CIGS/PERT silicon device employing, as a top cell, a u-CIGS cell optimized to take into account the above procedure. The results of these simulations provide insights into the optimization of ultrathin-film CIGS solar cells. [ABSTRACT FROM AUTHOR]

Light-emitting diodes (LEDs) based on halide perovskite nanocrystals have attracted extensive attention due to their considerable luminescence efficiency, wide color gamut, high color purity, and facile material synthesis. Since the first demonstration of LEDs based on MAPbBr 3 nanocrystals was reported in 2014, the community has witnessed a rapid development in their performances. In this review, a historical perspective of the development of LEDs based on halide perovskite nanocrystals is provided and then a comprehensive survey of current strategies for high-efficiency lead-based perovskite nanocrystals LEDs, including synthesis optimization, ion doping/alloying, and shell coating is presented. Then the basic characteristics and emission mechanisms of lead-free perovskite and perovskite-related nanocrystals emitters in environmentally friendly LEDs, from the standpoint of different emission colors are reviewed. Finally, the progress in LED applications is covered and an outlook of the opportunities and challenges for future developments in this field is provided., (© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.)

In recent years, gallium nitride (GaN) has exhibited tremendous potential for power electronic devices owing to its wider energy band gap, higher breakdown electric field, and higher carrier mobility [1]–[4]. Thanks to the availability of low-dislocation-density bulk GaN substrates and the intrinsic advantages of the vertical device topology, GaN-based vertical SBDs have been developed extensively towards high voltage and high current applications [5]–[7]. However, similar to the lateral GaN SBDs based on the AlGaN/GaN heterostructures, GaN vertical SBDs also suffer from reverse leakage issues due to the energy barrier lowering effect at high reverse bias condition. To achieve a decent device performance, several device architectures have been developed, such as junction barrier Schottky (JBS) diode [8], MPS diode [9]–[12], and trench metal-insulator-semiconductor barrier Schottky (TMBS) diode [13], [14], which are designed to move the peak electric field from the interface of the Schottky junction to the inside of the device at high reverse bias, leading to a higher breakdown voltage and a lower reverse leakage current.

The existing von Neumann architecture for artificial intelligence (AI) computations suffers from excessive power consumption and memory bottlenecks. As an alternative, compute-in-memory (CIM) technology has been emerging. Among various CIM device candidates, split-gate NOR flash offers advantages such as a high density and low on-state current, enabling low-power operation, and benefiting from a high level of technological maturity. To achieve high energy efficiency and high accuracy in CIM inference chips, it is necessary to optimize device design by targeting low power consumption at the device level and surpassing baseline accuracy at the system level. In split-gate NOR flash, significant factors that can cause CIM inference accuracy drop are the device conductance variation, caused by floating gate charge variation, and a low on-off current ratio. Conductance variation generally has a trade-off relationship with the on-current, which greatly affects CIM dynamic power consumption. In this paper, we propose strategies for designing optimal devices by adjusting oxide thickness and other structural parameters. As a result of setting Tox,FG to 13.4 nm, TIPO to 4.6 nm and setting other parameters to optimal points, the design achieves erase on-current below 2 μA, program on-current below 10 pA, and off-current below 1 pA, while maintaining an inference accuracy of over 92%.

Cardiac resynchronization therapy (CRT) has developed into a very effective technology for patients with decreased systolic function and has substantially improved patients' clinical course. However, non-responsiveness to CRT, described as lack of reverse cardiac chamber remodeling, leading to lack to improve symptoms, heart failure hospitalizations or mortality, is common, rather unpredictable, and not fully understood. This article aims to discuss key factors that are impacting CRT response, from patient selection to LV lead position, to structured follow-up in CRT clinics. Secondly, common causes and interventions for CRT non-responsiveness are discussed. Next, insight is given into technologies representing new and feasible interventions as well as pacing strategies in this group of patients that remain challenging to treat. Finally, an outlook is given into future scientific development. Despite the progress that has been made, CRT non-response remains a significant and complex problem. Patient management in interdisciplinary teams including heart failure, imaging, and cardiac arrhythmia experts appears critical as complexity is increasing and CRT non-response often is a multifactorial problem. This will allow optimization of medical therapy, and the use of new integrated sensor technologies and telemedicine to ultimately optimize outcomes for all patients in need of CRT. [ABSTRACT FROM AUTHOR]

We report gallium nitride (GaN) vertical trench junction barrier Schottky (TJBS) diodes and systematically analyzed the effects of the key design parameters on the reverse and forward characteristics of the devices. By taking advantage of the shielding effects from both the trenches and pn junctions in the TJBS structure, the high electric field at the Schottky contact region can be effectively suppressed. We found that the doping concentration, thickness, and spacing of p-GaN, as well as the depth and angle of the trench sidewalls are closely associated with the electric field distribution and the reverse characteristics of the TJBS diodes. With an optimal set of design parameters, the local electric field crowding at either the corner of the trench or the edge of the p-GaN can also be alleviated, resulting in a boosted breakdown voltage of up to 1250 V in the TJBS diodes. In addition, an analytical model was developed to explore the physical mechanism behind the forward conduction behaviors. We believe that the results can provide a systematical design strategy for the development of low-loss, high-voltage, and high-power GaN power diodes towards an efficient power system. [ABSTRACT FROM AUTHOR]

Left ventricular (LV) dP/dt max provides a sensitive measure of the acute hemodynamic response to cardiac resynchronization therapy (CRT) and can predict reverse remodeling on echocardiography. Its use to guide LV lead placement has been shown to improve outcomes in a multicenter randomized trial. Given the invasive protocol required for measurement, it is unlikely to be universally beneficial for patients undergoing CRT but may be useful for patients who do not respond to conventional CRT, or in those who have borderline indications or risk factors for non-response. In such cases, LV dP/dt max may help guide LV lead placement, optimize device programming, and select the best alternative method of delivering CRT, such endocardial LV pacing or conduction system pacing. [ABSTRACT FROM AUTHOR]

In this work, we provide a novel strategy to improve the charge balance in organic light emitting devices (OLEDs) by optimizing the hole injection layer (HIL) and thereby controlling the overall hole supply in the device. The lowest unoccupied molecular orbit (LUMO) of the p‐dopant proposed in this work, PD02, is ‐4.63 eV, much shallower than that of the commercial material (PD01). Nevertheless, this enables use of the doping concentration to modulate the supply of holes to the emissive layer to control the charge balance. We demonstrate that device performances are significantly improved by employing such a scheme. With 23% molar doping of PD02, a bottom emission red OLED achieves external quantum efficiency (EQE) over 30%, operating voltage of 3.4 V and LT95 ~ 15,000 h at 10 mA/cm2. Moreover, the efficiency roll‐off is also suppressed up till ~ 3,500 cd/m2, a desirable feature in display applications. A study of exciton distribution within the emissive layer suggests that improved charge balance is indeed achieved in the optimized structure. An additional benefit from the modified HIL is its lower lateral conductivity relative to the standard formula, which reduces crosstalk between RGB pixels. [ABSTRACT FROM AUTHOR]

The piezoelectric nature of collagen has been known for decades, yet its manifestation across, and interactions between, hierarchies remains elusive. Here, piezoelectricity at the tropocollagen‐, microfibril‐, and fibril‐level hierarchies is examined experimentally, using collagen assembled from solution onto muscovite mica substrates. An amplification of the d15 response of 35–50% is observed between the tropocollagen and fibril levels, with no difference observed between the microfibril and fibril levels. Comparison of experimental results with simulation indicates the potential to optimize collagen piezoresponse via tropocollagen packing to exceed the piezoelectric properties of native collagen fibrils. By improving electromechanical performance through adjustments to winding angle and packing, it may therefore be possible to utilize collagen in low‐cost, biodegradable, and biocompatible sensing or harvesting devices. [ABSTRACT FROM AUTHOR]

A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain. [ABSTRACT FROM AUTHOR]

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Carbon nanotube (CNT) field-effect transistors (FETs) have recently reached high-frequency (HF) performance similar to that of silicon RF-CMOS at the same gate length despite a tube density and current per tube that are far from the physical limits and suboptimal device architecture. This work reports on an investigation of the optimal device design for practical HF applications in terms of cut-off frequencies, power gain, and linearity. Different fundamental designs in the gate contact arrangement are considered based on a 3D device simulation of both CNTs and contacts. First, unit cells with a single CNT and minimal contact sizes are compared. The resulting simulation data are then extended toward a structure with two gate fingers and realistic contact sizes. Corresponding parasitic capacitances, as well as series and contact resistances, have been included for obtaining realistic characteristics and figures of merit that can be used for comparison with corresponding silicon RF MOSFETs. Finally, a sensitivity analysis of the device architecture with the highest performance is performed in order to find the optimal device design space. [ABSTRACT FROM AUTHOR]

The emerging memories are great candidates to establish neuromorphic computing challenging non-Von Neumann architecture. Emerging non-volatile resistive random-access memory (RRAM) attracted abundant attention recently for its low power consumption and high storage density. Up to now, research regarding the tunability of the On/Off ratio and the switching window of RRAM devices remains scarce. In this work, the underlying mechanisms related to gate tunable RRAMs are investigated. The principle of such a device consists of controlling the filament evolution in the resistive layer using graphene and an electric field. A physics-based stochastic simulation was employed to reveal the mechanisms that link the filament size and the growth speed to the back-gate bias. The simulations demonstrate the influence of the negative gate voltage on the device current which in turn leads to better characteristics for neuromorphic computing applications. Moreover, a high accuracy (94.7%) neural network for handwritten character digit classification has been realized using the 1-transistor 1-memristor (1T1R) crossbar cell structure and our stochastic simulation method, which demonstrate the optimization of gate tunable synaptic device.

Existing obstacle avoidance systems do not consider the situation of hollowed-out obstacles. Therefore, in this paper, we design an assistive cane with visual odometry based on these requirements of the blind to aid them in attaining safe indoor navigation. The proposed device is portable, compact and adaptable. The assistive cane with visual odometry can be used not only to directly detect obstacles, but also to draw the attention of people around, providing multiple protection for the blind. In order to optimize the device parameters, we select the height of the camera and the speed of the voice broadcast as factors to design a complete factorial design, aiming to explore the parameter level that can make the passing time shortest and the success rate of obstacle avoidance highest. We invited two visually impaired people and two blindfolded students with normal vision as the experimental subjects. Each subject was required to conduct the experiments under nine combinations of device parameters. The subjects tried to avoid obstacles according to the voice prompts. The passing time and the success rate of obstacle avoidance were recorded. The experimental results show that the broadcast speed causes the significant effect to the success rate and both the two factors affect the passing time. In addition, we discuss the results of different subjects’ response surfaces and perceptual patterns and get the conclusion that different visual perceptual patterns, namely route representation and two different survey representations, have a certain impact on the setting of the optimal parameter level and the optimal passing time. The congenitally blind subject with route representation has the shortest optimal passing time in an unfamiliar environment, and the camera height should be set at the center of the hollowed-out obstacle, while the results are somewhat different for the acquired visual impairment subjects and the blindfolded normal vision subjects with survey representation. The camera height should be set between the center and the upper position of the obstacle. In summary, the camera height should be set at the center of the hollowed-out barrier and the broadcast speed should be set at the highest level. At the same time, the device parameters should be adjusted appropriately according to the visual perception pattern of users. Further researches are needed to analyze the perceptual patterns in depth. [ABSTRACT FROM AUTHOR]

Abstract Implantable electrophoretic drug delivery devices have shown promise for applications ranging from treating pathologies such as epilepsy and cancer to regulating plant physiology. Upon applying a voltage, the devices electrophoretically transport charged drug molecules across an ion‐conducting membrane out to the local implanted area. This solvent‐flow‐free “dry” delivery enables controlled drug release with minimal pressure increase at the outlet. However, a major challenge these devices face is limiting drug leakage in their idle state. Here, a method of reducing passive drug leakage through the choice of the drug co‐ion is presented. By switching acetylcholine's associated co‐ion from chloride to carboxylate co‐ions as well as sulfopropyl acrylate‐based polyanions, steady‐state drug leakage rate is reduced up to sevenfold with minimal effect on the active drug delivery rate. Numerical simulations further illustrate the potential of this method and offer guidance for new material systems to suppress passive drug leakage in electrophoretic drug delivery devices.

Implantable electrophoretic drug delivery devices have shown promise for applications ranging from treating pathologies such as epilepsy and cancer to regulating plant physiology. Upon applying a voltage, the devices electrophoretically transport charged drug molecules across an ion‐conducting membrane out to the local implanted area. This solvent‐flow‐free "dry" delivery enables controlled drug release with minimal pressure increase at the outlet. However, a major challenge these devices face is limiting drug leakage in their idle state. Here, a method of reducing passive drug leakage through the choice of the drug co‐ion is presented. By switching acetylcholine's associated co‐ion from chloride to carboxylate co‐ions as well as sulfopropyl acrylate‐based polyanions, steady‐state drug leakage rate is reduced up to sevenfold with minimal effect on the active drug delivery rate. Numerical simulations further illustrate the potential of this method and offer guidance for new material systems to suppress passive drug leakage in electrophoretic drug delivery devices. [ABSTRACT FROM AUTHOR]

This paper presents a framework for automated optimization of double-heater convective PCR (DH-cPCR) devices by developing a computational fluid dynamics (CFD) simulation database and artificial neural network (ANN) model. The optimization parameter space that includes the capillary tube geometries and the heater sizes of DH-cPCR is established, and a database consisting of nearly 10,000 CFD simulations is constructed. The database is then used to train a two-stage ANN models that select practically relevant data for modeling and predict PCR device performance. The trained ANN model is then combined with the gradient-based and the heuristics optimization approaches to search for optimal device configuration that possesses the shortest DNA doubling time. The entire design process including model meshing and configuration, parallel CFD computation, database organization, and ANN training and utilization is fully automated. Case studies confirm that the proposed framework can successfully find the optimal device configuration with an error of less than 0.3 s, and hence, representing a cost-effective and rapid solution of DH-cPCR device design. [ABSTRACT FROM AUTHOR]

Remote areas in Northwest China are blind regions without large-scale power grid coverage. To satisfy the residential electricity demand, it is essential to utilize small-scale distributed wind power systems and increase wind energy utilization. The seagull airfoil wind energy conversion device is adopted to improve the aerodynamic performance and increase the use of wind energy. Based on the wind tunnel experiment and numerical simulation, the bending shape of the seagull airfoil is optimized. Further, the cascade structure is constructed using the central bending seagull airfoil to explore the flow mechanisms. The front and rear cascades are the main and secondary regions, accounting for 84% and 16% of the force generated, respectively. The deformation of the blade is significantly larger at the trailing edge than at the leading edge, thereby exhibiting unique deformation characteristics of seagull airfoils. When the impeller is rotated, the average force of each seagull airfoil was 15.1% more than that of the flat airfoil, thereby enabling the absorption of more wind energy and device optimization. Owing to the stress and deformation distribution, the seagull airfoil blade can adapt to different aerodynamic loads by changing the cambers and angles of attack to ensure smooth operation of the device. [ABSTRACT FROM AUTHOR]

A 7.1-μm-pitch lock-in pixel (LIP) CMOS image sensor (CIS) that is capable of simultaneously phasing with two different near-infrared-band (NIR-band) light pulses is developed for remote physiological measurement, particularly a heart rate variability (HRV) signal monitor. The proposed dual NIR-band lock-in operation is realized by a four-tap-wise charge modulation with adjacent two-tap LIPs by means of a column-interdigital pixel driving scheme combining with in-LIP lateral electric field modulators (LEFMs). For attaining the weak HRV signal, the implemented CIS achieves a subelectron temporal noise of 0.67 e−rms at 64 times correlated multiple sampling (CMS) and a high charge modulation contrast (MC) up to 96% at maximum. These remarkable properties primarily result from the in-LIP dark current and LEFM controlling optimizations proposed in device domain. The experimental results show that the developed CIS exhibits not only a 98.5% accuracy in HRV signal capture with −39.1-dB signal-to-background ratio (SBR) against a fluctuant brightness ambient light but also a moderate artificial motion robustness benefited from the proposed dual NIR-band lock-in technique. [ABSTRACT FROM AUTHOR]

A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.

In this article, we have systematically investigated the impact of different structural parameters on the breakdown voltage for GaN-based trench MIS barrier-controlled Schottky (TMBS) rectifier. Compared with the planar Schottky rectifier, the TMBS rectifier has field plates on the mesa sidewalls so that the drift region can be depleted in a 2-D manner, which helps to decrease the electric field at the metal/mesa interface. However, the adoption of mesas can make the electric potential lines at the mesa corner dense and has large curvatures. Therefore, the premature breakdown can occur when the electric field therein reaches the critical condition. We find that the electric field profiles can be affected by insulation layer thickness, mesa width, trench depth, and different types of insulation layers. Then, we increase the breakdown voltage by homogenizing the electric field distribution in the mesa region, e.g., the electric field at mesa corners can be decreased by adopting properly thick sidewall insulator and small trench depth. Meanwhile, TMBS rectifier using sidewall insulating material with a large dielectric constant more favors a large breakdown voltage. [ABSTRACT FROM AUTHOR]

This study uses a data-driven approach to address the complexities associated with research focused multi-sleeve Cone Penetration Test (CPT) devices, particularly focusing on the multi-friction attachment (MFA) and multi-piezo-friction attachment (MPFA) CPT devices. Hindered by time-consuming assembly and susceptibility to sensor stream losses due to extensive electronic components, these advanced devices demand optimization to transform from research devices to practice-suitable devices. This study aims at optimizing the design of the multi-sleeve CPT devices using machine learning, with soil type classification performance as the primary metric for device configuration effectiveness. The research scope centers not on using machine learning for soil classification but on refining the design of multi-sleeve CPT devices. A two-phase data-driven approach is adopted, testing various feature combinations across eight machine learning models. The first phase involves identifying the most suitable model for the dataset, followed by a refinement of features to balance sensor number minimization and soil classification accuracy. The result is a proposed configuration for a multi-sleeve CPT device, simplifying the original design while maintaining robustness, thereby enhancing cost-efficiency and operational effectiveness in geotechnical practice. This work sheds light on how the integration of machine learning can guide the design optimization of geotechnical instruments. [ABSTRACT FROM AUTHOR]

Interfacial engineering provides an important tool for optimizing the performances of optoelectronic devices. We show that poly[(2,7-(9,9′-dioctyl)fluorene)-alt-(2,7-(9,9′-bis(5″-trimethylammonium bromide)pentyl)fluorene)])], an alcohol-soluble π-conjugated polymer based on polyfluorene backbone and ammonium groups on the alkyl side chains, is capable of modifying the interface between the organic layer and the metal cathode in both organic solar cells and light-emitting diodes based on commercial materials and conventional architectures, improving their performances. The introduction of the cathode interlayer enhances the efficiency of a red-emitting phosphorescent OLED by 15% and decreases its turn-on voltage. The same polymer improves the power conversion efficiency of a PTB7/PC71BM solar cell by 55% and shows a beneficial effect in terms of device stability. [ABSTRACT FROM AUTHOR]

This paper introduces a device performance optimization approach for the FinFET through optimization of the gate length. As a result of reducing the gate length, the leakage current (Ioff) increases, and consequently, the stress along the channel enhances which leads to an increase in the drive current (Isat) of the PMOS. In order to sustain Ioff, work function is adjusted to offset the effect of the increased stress. Changing the gate length of the transistor yields different drive currents when the leakage current is fixed by adjusting the work function. For a given device, an optimal gate length is found to provide the highest drive current. As an example, for a standard performance device with Ioff = 1 nA/um, the best performance Isat = 856 uA/um is at L = 34 nm for 14 nm FinFET and Isat = 1130 uA/um at L = 21 nm for 7 nm FinFET. A 7 nm FinFET will exhibit performance boost of 32% comparing with 14 nm FinFET. However, applying the same method to a 5 nm FinFET, the performance boosting is out of expectance comparing to the 7 nm FinFET, which is due to the severe short-channel-effect and the exhausted channel stress in the FinFET. [ABSTRACT FROM AUTHOR]

Photonics has been widely explored in computing and communications, mainly to rationalize the relationship between device size minimization and data processing/transmission maximization. Generally driven by optimization and modeling techniques, the design of photonic devices is often performed by bio-inspired algorithms integrated to electromagnetic solvers, which have achieved advances but is still time-consuming. As an alternative to a costly finite element method (FEM) solver, a multilayer perceptron (MLP) neural network is proposed for computing power coupling efficiency of photonic couplers, originally designed through an integrated evolutionary strategy (ES) and FEM routine. We address the ES-FEM design of two efficient couplers, present the MLP implementation and the MLP training and testing over the routine generated datasets, and measure MLP and FEM runtime. MLP suitably predicted the power coupling efficiency of a variety of unknown couplers on tests. The measured runtime showed MLP is ∼10 5 faster than FEM. In conclusion, MLP is a potential tool to be integrated to ES on the design of such photonic couplers. [ABSTRACT FROM AUTHOR]