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There is increasing interest in using specialized circuits based on emerging technologies to develop a new generation of smart devices. The process and device variability exhibited by such materials, however, can present substantial challenges for designing circuits. Three models are considered here: a physical compact model, an empirical look‐up table, and an empirical surrogate model based on a multilayer perceptron (MLP) regression. Each one is fit to measurements of discrete organic thin film transistors in the low voltage regime. It is shown that the models provide consistent results when designing artificial neuron circuits, but that the MLP regression provides the highest accuracy and is much simpler to fit compared to the compact model. The targeted technology exhibits non‐ideal behavior such as variable threshold voltage and hysteresis. Using the MLP regression model, the effect of such variability on the performance of an artificial neuron circuit is compared. It is found that these effects alter the neuron firing rate and change the time spent in the on/off states but do not change the basic operation. [ABSTRACT FROM AUTHOR]

In this work, we present an analytical DC model for the Gallium Nimtide High Electron Mobility Transistor by taking into account the finite width of the two-dimensional electron gas (2DEG) layer. The model predicts the vertical electric field in the device, especially at the interface of AlGaN and GaN layers, electrostatic potential, and energy band diagram are also obtained by the model. The general form of Gauss's law including piezoelectric and spontaneous polarization effect is employed to obtain this model in different regions from top to bottom of the GaN-HEMT. The model solves electrostatic equations in all regions of the device including two narrow regions around the AlGaN/GaN interface with thicknesses of about 3 nm. This model demonstrates how the triangular quantum well is formed around the AlGaN/GaN interface and varies as a function of gate voltages. Using the proposed electrostatic analysis and the treatment proposed by the EPFL HEMT model, the DC current-voltage characteristics are obtained by this model. The results predicted by the model are validated with TCAD simulations and in part with the EPFL HEMT model. The proposed model facilitates the following steps toward obtaining a complete model for small signal and large signal analysis of GaN HEMT. [ABSTRACT FROM AUTHOR]

Solar cell simulation software offers an intuitive platform enabling researchers to efficiently model, simulate, analyze, and optimize photovoltaic devices and accelerate desired innovations in solar cell technologies. This paper systematically reviews the numerical techniques and algorithms behind major solar cell simulators reported in the literature. The status, scopes, and limitations of these simulators have been critically evaluated after recording their use in nearly two hundred published articles. For the first time, we present a comparative study of the simulators in terms of their availability, applications, and system requirements. We anticipate that this review will aid in selecting the most appropriate solar cell simulator for the numerical study of preferred type of solar cells.

Abstract There is increasing interest in using specialized circuits based on emerging technologies to develop a new generation of smart devices. The process and device variability exhibited by such materials, however, can present substantial challenges for designing circuits. Three models are considered here: a physical compact model, an empirical look‐up table, and an empirical surrogate model based on a multilayer perceptron (MLP) regression. Each one is fit to measurements of discrete organic thin film transistors in the low voltage regime. It is shown that the models provide consistent results when designing artificial neuron circuits, but that the MLP regression provides the highest accuracy and is much simpler to fit compared to the compact model. The targeted technology exhibits non‐ideal behavior such as variable threshold voltage and hysteresis. Using the MLP regression model, the effect of such variability on the performance of an artificial neuron circuit is compared. It is found that these effects alter the neuron firing rate and change the time spent in the on/off states but do not change the basic operation.

Owing to efficient thermoelectric conversion, non-toxicity, low density and cost, Mg2(Si,Sn)-based solid solutions hold potential for mid-to-high temperature waste heat recovery. Yet, challenges arise from n-Mg2(Si,Sn) degradation at ≥400 °C caused by Mg loss and charge carrier reduction, particularly in Sn-rich compositions. To build a thermoelectric generator (TEG) stable up to 400 °C, we propose binary Mg2Si as the n-type leg. Using Ni45Cu55 and Ni yields low electrical contact resistance (

Artificial Neural Network (ANN) is frequently utilized for the development of behavioral models of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). However, exhaustive investigation concerning the ANN algorithms implemented in major programming platforms for small-signal behavioral models of GaN HEMTs is generally not available. To fill this void, this paper carefully examines and evaluates ANN algorithms implemented in MATLAB, Python and R software environments for the development of accurate and efficient GaN HEMTs modelling. At first, the ANN based models are developed using MATLAB, Python’s major frameworks namely Keras, PyTorch and Scikit-learn, and R’s ANN framework namely H2O to model the GaN devices. Thereafter, an in-depth analysis is carried out to comprehend the usefulness of each framework in different application scenarios. At last, a detailed evaluation of the developed models in terms of generalization capability, training and prediction speed, seamless integration with the standard circuit design tool advanced design system, and of the development environments in respect of support and documentation, user-friendly interface, ease of model development, open-access and cost is carried out.

Careful design and material selection are the most beneficial strategies to ensure successful implantation and mitigate the failure of a neural probe in the long term. In order to realize a fully flexible implantable system, the probe should be easily manipulated by neuroscientists, with the potential to bend up to 90°. This paper investigates the impact of material choice, probe geometry, and crucially, implantation angle on implantation success through finite-element method simulations in COMSOL Multiphysics followed by cleanroom microfabrication. The designs introduced in this paper were fabricated using two polyimides: (i) PI-2545 as a release layer and (ii) photodefinable HD-4110 as the probe substrate. Four different designs were microfabricated, and the implantation tests were compared between an agarose brain phantom and lamb brain samples. The probes were scanned in a 7 T PharmaScan MRI coil to investigate potential artefacts. From the simulation, a triangular base and 50 µm polymer thickness were identified as the optimum design, which produced a probe 57.7 µm thick when fabricated. The probes exhibit excellent flexibility, exemplified in three-point bending tests performed with a DAGE 4000Plus. Successful implantation is possible for a range of angles between 30° and 90°. This article is part of the theme issue 'Advanced neurotechnologies: translating innovation for health and well-being'. [ABSTRACT FROM AUTHOR]

Resistive switching behaviour has been demonstrated to be a common characteristic to many materials. In this regard, research teams to date have produced a plethora of different devices exhibiting diverse behaviour, but when system design is considered, finding a ‘one-model-fits-all’ solution can be quite difficult, or even impossible. However, it is in the interest of the community to achieve more general modelling tools for design that allows a quick model update as devices evolve. Laying the grounds with such a principle, this paper presents an artificial neural network learning approach to resistive switching modelling. The efficacy of the method is demonstrated firstly with two simulated devices and secondly with a 4 μm2 amorphous IGZO device. For the amorphous IGZO device, a normalized root-mean-squared error (NRMSE) of 5.66 × 10−3 is achieved with a [2, 50,50 ,1] network structure, representing a good balance between model complexity and accuracy. A brief study on the number of hidden layers and neurons and its effect on network performance is also conducted with the best NRMSE reported at 4.63 × 10−3. The low error rate achieved in both simulated and real-world devices is a good indicator that the presented approach is flexible and can suit multiple device types.

This paper presents the hybridized fuzzy-neural predictive intelligent (HFNPI) based approach for predicting FinFET model. The proposed model is an improved approach over artificial neural network (ANN) model and adaptive neuro fuzzy inference system (ANFIS) model that provides optimum model parameters. In this paper, the challenge of optimization of large number of parameters is reduced. It assesses the performance of resultant structure on the basis of selected RF figure-of-merit. Based on the application requirements, RF figure-of-merit such as fT and fmax are used as appropriate performance parameters to analyse the device performance. The framework for the HFNPI model is underlapped FinFET structural/process parameters. The mean prediction error was found 2.8 × 10−4 GHz. The comparative analysis of HFNPI with ANN and ANFIS model is done. It is found that combination of fuzzy and neural logic shows better result rather than individual ANFIS and ANN model to redevelop the model and increase the number of inputs. [ABSTRACT FROM AUTHOR]

Summary: In this paper, a comprehensive dynamic model for silicon photomultiplier (SiPM) detectors is proposed to investigate their response when exposed to the light of any wavelength and relatively high intensity. Also, a procedure is proposed to perform reliable circuit‐level simulations to predict the response of these detectors under various photon rates. The approach of dynamic model is based on the state of microcells in terms of overvoltage, elapsed recharging time, and their effect on the triggering probability with which the detector current and voltage can be accurately simulated. Using the proposed model, the SiPM behaviour is examined under various continuous illumination power in simulation. The effectiveness of the proposed model and the simulation method are verified by experimental results extracted from two SiPM detectors. [ABSTRACT FROM AUTHOR]

Lead-halide based perovskite solar cells (PSC's) have proven to be efficient and have extraordinary stability. CsPbI 3 is thought to be a potential light-absorbing material for use in all-inorganic PSCs due to its advantageous bandgap and thermal stability. In contrast to the organic-inorganic hybrid PSCs counterpart, the CsPbI 3 has a high defect density resulting in a lower PCE and less stable structure. In this study, we performed a device modeling of all-inorganic CsPbI 3 using SCAPS-1D to improve its performance. Here, we have shown how various electron and hole transport layers (ETL & HTL) affect the performance of the CsPbI 3 device. For this, the effect of dopant concentration, the thickness of HTL, ETL, and absorber layer along with optimization of back contact metal work function have been numerically investigated. Under the optimum condition, the best theoretical conversion efficiency of ∼27.04% was achieved for FTO/SnO 2 /CsPbI 3 /CuSbS 2 /Pd configuration, which is the highest theoretical value reported among CsPbI 3 -based PSCs. Based on these results, we concluded that all-inorganic CsPbI 3 PSCs under these optimized conditions might help researchers improve this material experimentally for renewable energy applications. [ABSTRACT FROM AUTHOR]

Cut-off frequency increase from 12.1 GHz to 26.4 GHz, 52.1 GHz and 91.4 GHz is observed when the 1 μm gate length GaN HEMT is laterally scaled down to L G = 0.5 μm, L G = 0.25 μm and L G = 0.125 μm, respectively. The study is based on accurately calibrated transfer characteristics ( I D - V GS ) of the 1 μm gate length device using Silvaco TCAD. If the scaling is also performed horizontally, proportionally to the lateral (full scaling), the maximum drain current is reduced by 38.2% when the gate-to-channel separation scales from 33 nm to 8.25 nm. Degradation of the RF performance of a GaN HEMT due to the electric field induced acceptor traps experienced under a high electrical stress is found to be about 8% for 1 μm gate length device. The degradation of scaled HEMTs reduces to 3.5% and 7.3% for the 0.25 μm and 0.125 gate length devices, respectively. The traps at energy level of E T = E V + 0.9 eV (carbon) with concentrations of N IT = 5 × 10 16 cm − 3 , N IT = 5 × 10 17 cm − 3 and N IT = 5 × 10 18 cm − 3 are located in the drain access region where highest electrical field is expected. The effect of traps on the cut-off frequency is reduced for devices with shorter gate lengths down to 0.125 μm. [ABSTRACT FROM AUTHOR]

As solar cell efficiency improves, so does the cell's radiative efficiency. In high-performance tandem stacks, each individual cell emits significant luminescence during operation, making radiative coupling between these cells an important factor to consider in cell design, measurement and performance prediction. Past modelling includes the electroluminescent coupling component only, although photoluminescent coupling is likely to be important for cells operating near or below their maximum power point voltage or when junction defect recombination is dominant. In this work, we first propose an extension of earlier models to allow this non-negligible coupling component to be included, which is validated by measurement of the closely related external emission. Then, we establish an equivalent circuit and uniquely use intuitive circuit concepts to conduct a comprehensive analysis clarifying the roles of parasitic circuit elements and external loads in the complex radiative interactions between cells. The circuit analysis also reveals some undiscovered issues to be addressed in eliminating coupling effects from measured cell spectral responses. Copyright © 2016 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

It is currently possible to fabricate crystalline silicon solar cells with the absorber thickness ranging from a few hundreds of micrometres (conventional wafer-based cells) to devices as thin as 1 μm. In this work, we use a model single-junction solar cell to calculate the limits of energy conversion efficiency and estimate the optimal absorber thickness. We have found that the limiting efficiency for cells in the thickness range between 40 and 500 μm is very similar and close to 29%. In this regard, we argue that decreasing the thickness below around 40 μm is counter-productive, as it significantly reduces the maximum achievable efficiency, even when an optimal light trapping is implemented. We analyse the roles of incomplete light trapping and extrinsic (bulk and surface) recombination mechanisms. For a reasonably high material quality, consistent with present-day fabrication techniques, the optimal thickness is always higher than a few tens of micrometres. We identify incomplete light trapping and parasitic losses as a major roadblock for improving the efficiency upon the current record of 25.6% for silicon solar cells. Finally, considering the main parameters that impact the solar cell performance, we quantify the requirements for achieving a given efficiency, which helps us to establish a proper design strategy for high efficiency silicon solar cells. [ABSTRACT FROM AUTHOR]

In this work, we investigated the influence of the mobility ( μ ) and the lifetime ( τ ) of charge carriers on the short-circuit current, the fill factor, and the efficiency of a bulk heterojunction solar cell based on a P3HT:PCBM biphasic film. Measurements of the photocurrent as a function of the applied voltage J ph ( V ), photo-CELIV, and the transient photovoltage (TPV) were carried out at different temperatures (100–340 K). With the help of an analytical model for the photocurrent, we shed light on which recombination mechanism is dominant along the J ph ( V ) curve and quantitatively evaluated the impact of the μτ product on the cell parameters. We conclude that for voltages close to the open-circuit voltage, nongeminate recombination is the main loss factor in a bulk heterojunction solar cell, while as the photocurrent approaches its saturated value, the loss factor is essentially defined by the dissociation probability ( P ) of the charge transfer states (CTC states). Thermomechanical analysis (DMA) provided additional information about structural changes of the P3HT:PCBM active layer, which can be correlated with changes in the loss factor and in the cell parameters. [ABSTRACT FROM AUTHOR]

In this study, a 12-bit 65MS/s MOSFET-only pipelined analogue-to-digital converter (ADC) is successfully designed and implemented in 0.18 µm standard digital complementary metal–oxide–semiconductor (CMOS) technology. In the proposed ADC, constant capacitors of the analogue pipeline stages are replaced with anti-parallel depletion-mode metal–oxide–semiconductor (MOS) devices and their non-linearity is modelled and calibrated digitally. Simulations show that the proposed digital calibration algorithm improves the ADC signal-to-noise plus distortion ratio and spurious-free dynamic range from 43 dB and 44 dB to 70 dB and 78 dB, respectively. [ABSTRACT FROM AUTHOR]

We report the development and testing of simulation software, which, combining self-consistent Brownian dynamics and Drift Diffusion simulation techniques in a single simulation domain allows the simulation of the effect of ions and charged molecules on the current flowing through a sensing FET. For sensory applications an aqueous solution is introduced above the transistor gate dielectric and the effect of fixed charges on the transistor current is investigated. We significantly extend previous work (Moore et al. in Proceedings of the 11th International Conference on Ultimate Integration on Silicon, pp. 85-88, ) by analysing the effects of mobile ions on the system and introduce an initial analysis of the noise associated with the Brownian motion of mobile ions in the solution in order to determine the sensitivity of the FET in measuring the position and number of ions. Finally, results are presented showing the sensitivity of the drain current to the movement of a single ion through a nano-pore. [ABSTRACT FROM AUTHOR]

Abstract: Many electrical characteristics of Cu(In,Ga)Se2-based solar cells, including current–voltage characteristics, are affected by specific properties of negative-U defects in the absorber. We present these characteristics and discuss them in the framework of a V Se–V Cu defect model proposed by Lany and Zunger. We show how these defects influence photocarrier transport and the dominant recombination mechanism, and hence also the photovoltaic parameters of the cells. Numerical simulations validating our approach will also be presented. [Copyright &y& Elsevier]

The development of microwave Gallium Arsenide Metal semiconductor Field Effect Transistors (GaAs MESFET) devices has enabled the miniaturization of cellular phones, pagers and other electronic devices. With these MESFET devices comes the need to model them. In this work, we have extracted a small signal equivalent circuit model for a GaAs MESFET device, where the elements are directly related to the physical design parameters of the device. The model is simulated using SPICE to give the GaAs MESFET characteristics. [ABSTRACT FROM AUTHOR]

Abstract: Synthetic diamond power Schottky structures have the capability of sustaining significant reverse voltages with rather thin drift layers. Diamond Schottky barrier diodes (SBDs) also exhibit promising on-state behaviour. This paper looks at the influence of temperature and drift doping on the forward characteristics of these devices. Physical explanations for the variation of the forward current with the forward voltage, together with equations which aim to model this dependence, are also presented. [Copyright &y& Elsevier]

Abstract: A new analytical model is used to describe the emitter of silicon solar cells in order to gain information on the surface recombination velocity S. The procedure takes advantage of the combined use of experimental measurements, done to determine the emitter saturation current J oe, and analytical modelling to relate J oe to S. Several experiments have been carried out on silicon solar cells having different emitter profiles subjected to various surface treatments. The influence of the surface on significant cell parameters has been analysed. [Copyright &y& Elsevier]

Abstract: The influence of parasitic capacitance on high frequency performances of SiGe n-HFET is reported. These capacitances arising from the fringe and electrostatic contributions of the gate are extracted from HF measurements and estimated with a 2D hydrodynamic modelling and with a 2D electrostatic modelling of the device. The main electrostatic contribution arises from the strong direct coupling between the mushroom-shaped gate and the 2D electron gas in the quantum well increased by the thin oxide layer above the undoped Si cap layer. The height of the gate foot, the shape of the top of the gate are investigated, showing that if the mushroom shape increase the capacitance by 22% compared to a simple-shaped gate, the increase of its size has less impact than the oxide thickness and the aspect ratio. The extrinsic capacitances can degrade by 27% the intrinsic properties of the transistors reported here. [Copyright &y& Elsevier]

A fast wavelet based non-uniform grid generation method is presented for time domain simulation of active semiconductor devices. The proposed approach solves the active part model of the semiconductor device. This approach is used to solve the non-linear equations of semiconductors on the self-adaptive grids, obtained by applying wavelet. Non-uniform mesh size is implemented and controlled by the wavelet coefficients. A fine mesh is used where the unknowns are varying rapidly and a coarser mesh where the unknowns are varying slowly. The energy model is considered for active layer of transistor and its results are compared with those of the classical drift diffusion model. Performance of this method is compared with the conventional finite difference on a uniform mesh. A reduction over 80 percent of unknowns in grid together with good accuracy in simulation is obtained using this non-uniform mesh while accurate physical behaviour of the device can be predicted. This represents an ongoing effort toward a numerical technique that uses wavelet to solve physical modelling problem of semiconductor devices. Copyright © 2006 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

To overcome any difficulty related to the fabrication of diamond ultraviolet (UV) sensors based on p–n junction, in this work we describe the realisation and characterisation of a very simple chemical vapour deposited diamond position sensitive detector based on a voltage-division structure. The photosensor, tested under UV excimer laser illumination, shows a non-linearity of the output signal vs. the beam position of approximately 6% but the response repeatability under stable excitation conditions indicates an rms signal fluctuation as low as 1%. A very low sensitivity to light intensity variation has been also evidenced. Moreover, the device shows a high stability and preliminary results seem to indicate a good robustness to repetitive use. Compared to silicon, the high thermal conductivity and the large threshold energy for radiation damage of diamond would largely extend the lifetime of the device under high intensity UV irradiation. [Copyright &y& Elsevier]

Diamond is radiation-hard. This makes CVD diamond films suitable for particle detector applications without a significant degradation in performance due to radiation damage. We have built up a computer simulation of the detection mechanism in diamond detectors. We consider three different morphologies for the CVD diamond films: single crystal (SC), highly oriented (HOD), and randomly oriented polycrystalline (PCD) diamond. Our model of a diamond detector enables us to relate the morphology of the material and the geometry of the system to predict the detector''s response. In this paper, we consider two different electrode configurations: parallel plate and interdigitated strips geometry; by applying the Shockley–Ramo theorem we calculate the total induced charge on the electrodes and we analyse some effects related to the presence of defects and other inhomogeneities related to the polycrystalline structure. In particular, we study the non-uniformity of the detector''s response and the appearance of slow components in the output signal. [Copyright &y& Elsevier]

A two dimensional-hydrodynamic model is carried out to predict the performance of short gate length power field effect transistors based on III–V semi-conductor systems. The model is based on the conservation equations, deduced from the Boltzmann transport equation, solved in their whole form by taking temporal and spatial variations in carrier momentum into account. This model is well suited to get accurate predictions for power devices having various gate recess topologies. Results are performed for devices with different gate lengths and compared with those obtained from simplified models. For gate lengths shorter than 0.5 μm, a drop in the overshoot velocity phenomenon involves a better estimation of the characteristics of the device. [Copyright &y& Elsevier]

We have built up a computer simulation of the detection mechanism for particles in diamond detectors. A detector with the interdigitated strip geometry is considered in this paper. Minimising ionising particles produce approximately 36 electron–hole pairs per micrometre along their path, which traverses the full thickness of the detector and alpha particles produce a large number of electron–hole pairs within a few micrometres of the surface. Under an applied electric field, the carriers move through the material and they induce charge on each electrode. By applying the Shockley–Ramo theorem we calculate this induced charge, which gives rise to the signal in an external circuit. In diamond, many of the carriers are trapped at defects in the material. They may recombine or be released at later times and continue their path contributing further to the signal. We have included these effects in the simulation and we have investigated the temperature dependence of the response of the detector. [Copyright &y& Elsevier]

We developed a simulation tool that combines a frequency-domain simulation engine and different nonlinear device modelling approaches. Among these, we focus on a novel technique based on vectorial large-signal measurements. We show the hard practical implementation of the analytical solution and propose an accurate procedure based on optimization. ©2000 John Wiley & Sons, Inc. Int J RF and Microwave CAE 10: 63–72, 2000. [ABSTRACT FROM AUTHOR]

Accurate forecasting of yearly energy yield of photovoltaic devices under realistic operating conditions is key for numerous practical applications related to further evolution of photovoltaics. In this work we present development and validation of an energy yield model applied to planar perovskite solar cells. The model is based on the combination of advanced optical modelling and extensive opto-electrical characterization and takes the geographical location and the orientation of the device into account. Using the model, we first perform a detailed sensitivity analysis and indicate the key parameters and their interdependencies that most significantly affect the calculated energy yield values. We show that the results are dominated (within 4% of the final value) by the solar irradiance dependency of the short-circuit current density, and further by the temperature dependency of the open-circuit voltage and the fill factor, whereas the irradiance dependency of the open-circuit voltage and the fill factor are mutually compensated. In the second part of the paper, we investigate how the energy yield of the device is affected by the application of external light management foils. Different texture morphologies, geographical locations, and device orientations are included in the investigation. The results show that even under realistic operating conditions, the overall trends of the light management efficiency of textured foils are not that different from those observed under standard test conditions; the highest energy yield gains in the order of 7–11% are obtained by the tetrahedral texture which is indicated as optimal in all studied cases. [Display omitted] • EY forecasting crucial for LCOE estimation, degradation monitoring, and device optimization. • J SC under realistic conditions can be simulatend using advanced optical modelling. • V OC and FF under realistic conditions can be obtained through extensive electrical characterization. • External light management foils provide significant EY boosts under realistic outdoor conditions; tetrahedral micro texture indicated as the optimal in all studied cases. • Similar trends observed as under STC conditions, with similar achievable relative gains. [ABSTRACT FROM AUTHOR]

This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using Vector Network Analyser is introduced in this paper as an original contribution. It was applied to extract the impedances of the GaN device to develop an efficient behavioural model. The switching behaviour of the model was validated using both simulation and real time double pulse test experiments at 500 V, 15 A conditions. The proposed model is much easier for power designers to handle, without the need for knowledge about the physics or geometry of the device. The proposed model for Transphorm GaN HEMT was found to be 95.2% more accurate when compared to the existing LT-Spice manufacturer model. This work additionally highlights the need to adopt established RF techniques into power electronics to reduce the learning curve while dealing with these novel high-speed switching devices. [ABSTRACT FROM AUTHOR]

The modelling and simulation of low-dimensional nanoelectronic devices is important, because the semiconductor industry has scaled transistors down to the sub- 10 n m regime. The top of the barrier (ToB) transistor model has been developed and used to model transistors that are composed of various semiconducting materials. In this paper, a brief overview of the ToB transistor model is presented. The main objective of this paper is to provide a focused review on the device modelling milestones that have been achieved using the ToB transistor model. The accuracy of a few of these models is assessed by computing the normalised root mean square deviation. The ToB transistor model is widely used for computational studies on low-dimensional field-effect transistors with various channel materials, such as ultra-thin-bodies, two-dimensional materials and one-dimensional materials. The ToB transistor model is also useful for extensive research in circuit-level simulations. In summary, this nanoscale model helps researchers to identify and evaluate the potential nanomaterials for future nanoelectronic applications. • A focused review of nanotransistor model for nanoelectronics. • Overview of the top of the barrier approach. • The milestones of the nanotransistor model for semiconductor nanomaterials. • Model comparison based on the benchmark and performance. [ABSTRACT FROM AUTHOR]