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1. A Low-Complexity Digital Predistortion Technique for Digital I/Q Transmitters

2. PA Output Power and Efficiency Enhancement Across the 2:1 VSWR Circle using Static Active Load Adjustment

3. A Wideband Digital-Intensive Current-Mode Transmitter Line-Up

4. A 26GHz Balun-First Three-Way Doherty PA in 40nm CMOS with 20.7 dBm Psat and 20dB Power Gain

5. A Highly Linear Receiver Using Parallel Preselect Filter for 5G Microcell Base Station Applications

6. 19.1 A 300MHz-BW, 27-to-38dBm In-Band OIP3 sub-7GHz Receiver for 5G Local Area Base Station Applications

7. A Wideband Energy-Efficient Multi-Mode CMOS Digital Transmitter

8. High-Power Digital Transmitters for Wireless Infrastructure Applications (A Feasibility Study)

9. A 0.5-3GHz Receiver with a Parallel Preselect Filter Achieving 120dB/dec Channel Selectivity and +28dBm Out-of-Band IIP3

10. A 1-to-4GHz Multi-Mode Digital Transmitter in 40nm CMOS Supporting 200MHz 1024-QAM OFDM signals with more than 23dBm/66% Peak Power/Drain Efficiency

11. A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies

12. Load-Modulation-Based IMD3 Cancellation for Millimeter-Wave Class-B CMOS Power Amplifiers Achieving EVM < 1.2%

13. A Millimeter-Wave CMOS Series-Doherty Power Amplifier With Post-Silicon Inter-Stage Passive Validation

14. A Wideband Two-Way Digital Doherty Transmitter in 40nm CMOS

15. A 23.8–30.4-GHz Vector-Modulated Phase Shifter With Two-Stage Current-Reused Variable-Gain Amplifiers Achieving 0.23° Minimum RMS Phase Error

16. A Millimeter-Wave Front-End for FD/FDD Transceivers Featuring an Embedded PA and an N-Path Filter Based Circulator Receiver

17. Compact N-Way Doherty Power Combiners for mm-wave 5G Transmitters

18. A Wideband IQ-Mapping Direct-Digital RF Modulator for 5G Transmitters

19. A 39 W Fully Digital Wideband Inverted Doherty Transmitter

20. On-chip output stage design for a continuous class-F power amplifier

21. A Wideband Four-Way Doherty Bits-In RF-Out CMOS Transmitter

22. A Millimeter-Wave Mutual-Coupling-Resilient Double-Quadrature Transmitter for 5G Applications

23. A Versatile and Efficient 0.1-to-11 Gb/s CML Transmitter in 40-nm CMOS

24. 6.5 A 3dB-NF 160MHz-RF-BW Blocker-Tolerant Receiver with Third-Order Filtering for 5G NR Applications

26. A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz

27. A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier

28. A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS

29. A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS

30. High Efficiency and Wide Bandwidth Quasi-Load Insensitive Class-E Operation Utilizing Package Integration

31. A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies

34. A Wideband 2x13-bit All-Digital I/Q RF-DAC

36. Open loop load pull arrangement with determination of injections signals

37. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and A1N Cooling

38. A 67 dBm OIP3 Multistacked Junction Varactor

39. Varactor element and low distortion varactor circuit arrangement

40. Linear variable voltage diode capacitor and adaptive matching networks

42. A Wideband 2x13-bit All-Digital I/Q RF-DAC

43. Passive and active reconfigurable scan-beam hollow patch reflectarray antennas

44. Digital power amplifier with I/Q combination

45. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and A1N Cooling

46. Open loop load pull arrangement with determination of injections signals

47. A 90-W peak power GaN outphasing amplifier with optimum input signal conditioning

48. Active Harmonic Load–Pull With Realistic Wideband Communications Signals

49. Enabling Low-Distortion Varactors for Adaptive Transmitters

50. A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

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