1. Experimental location of helium atoms in 6H-SiC crystal lattice after implantation and after annealing at 400 degrees C
- Author
-
Pierre Desgardin, Thierry Sauvage, Blandine Courtois, H. Erramli, M.F. Barthe, Frédérico Garrido, F. Linez, Conditions Extrêmes et Matériaux : Haute Température et Irradiation (CEMHTI), Université d'Orléans (UO)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), CSNSM PCI, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
- Subjects
Nuclear and High Energy Physics ,cristal lattice ,Materials science ,Annealing (metallurgy) ,chemistry.chemical_element ,Crystal structure ,Atomic units ,Molecular physics ,Fluence ,Ion ,chemistry.chemical_compound ,Nuclear reaction analysis ,Silicon carbide ,SILICON-CARBIDE ,General Materials Science ,cristallographic planes ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,ANNIHILATION ,TEMPERATURE ,Helium ,[PHYS]Physics [physics] ,ta114 ,MECHANICAL-PROPERTIES ,NUCLEAR-REACTION ANALYSIS ,DIFFUSION ,IRRADIATION ,POSITRON LIFETIME SPECTROSCOPY ,Crystallography ,Nuclear Energy and Engineering ,chemistry ,MICROSTRUCTURAL EVOLUTION ,Helium atoms ,BEHAVIOR - Abstract
International audience; The question of the helium behavior in silicon carbide has been studied at the atomic scale by numerical simulations, but no experiment has been carried out to assess the results hitherto. This paper describes the first experiments allowing this comparison. 6H-SiC single crystals were implanted with 50-keV He ions at a fluence of 10(15) He/cm(2) at room temperature. The as-received and as-implanted samples were analyzed by RBS and NRA in channeling mode along the main crystallographic planes and across three main axes. The measurements have shown that a portion of the He is located in the interstitial tetrahedral sites as predicted by the numerical simulations. The same measurements were performed on an implanted sample subsequently annealed at 400 degrees C under Ar atmosphere. They have shown that the quantity of He detected in interstitial tetrahedral sites T-Si and T-C has not significantly changed whereas that of He detected in the main crystallographic plane and in the main axis has increased. This increase is likely caused by He atoms migration at 400 degrees C toward interstitial positions located inside vacancies such as V-Si and VSiVC. In parallel a partial recovery of the Si and C sublattices has been observed. (C) 2015 Elsevier B.V. All rights reserved.
- Published
- 2015
- Full Text
- View/download PDF