Search

β-Ga2O3 has received widespread attention due to its ultrawide bandgap, which potentially permits applications in extreme conditions. Ultrafast laser irradiation of β-Ga2O3 provides a means for exploring the response of the material under such conditions, which could result in the generation of point defects as well as a localized modification of structural features that could yield properties that differ from the pristine surface. However, an understanding of defects generated by femtosecond laser irradiation in the vicinity of laser-induced periodic surface structures (LIPSS) remains to be explored. We correlate topographic features with optical and electronic properties by combining near-nm scale resolution cathodoluminescence with Kelvin probe force microscopy. Defects are found to correlate with crystalline order and near-surface morphology, as well as changes in work function. They are also suggested to be closely related to the formation of high spatial frequency LIPSS. These results suggest a need for precise tuning of laser irradiation conditions as well as possible post-processing to control defects in future Ga2O3 devices. [ABSTRACT FROM AUTHOR]

β-Ga2O3 has received widespread attention due to its ultrawide bandgap, which potentially permits applications in extreme conditions. Ultrafast laser irradiation of β-Ga2O3 provides a means for exploring the response of the material under such conditions, which could result in the generation of point defects as well as a localized modification of structural features that could yield properties that differ from the pristine surface. However, an understanding of defects generated by femtosecond laser irradiation in the vicinity of laser-induced periodic surface structures (LIPSS) remains to be explored. We correlate topographic features with optical and electronic properties by combining near-nm scale resolution cathodoluminescence with Kelvin probe force microscopy. Defects are found to correlate with crystalline order and near-surface morphology, as well as changes in work function. They are also suggested to be closely related to the formation of high spatial frequency LIPSS. These results suggest a need for precise tuning of laser irradiation conditions as well as possible post-processing to control defects in future Ga2O3 devices. [ABSTRACT FROM AUTHOR]

Scintillators are materials that convert ionizing radiation in the form of particles or photons into low-energy photons in the ultraviolet to near-infrared spectral range. This work reviews efforts to use colloidal nanocrystals as scintillator materials. To date, research on colloidal nanocrystals as scintillators has focused on doped phosphor systems, quantum dots and related structures, and perovskite-based nanocrystals. Among various material classes and forms, colloidal semiconductor nanocrystals stand out thanks to their appealing fluorescence properties, yet understanding of their radioluminescence and cathodoluminescence is incomplete. This review discusses fundamental limits and material design challenges toward achieving high brightness, fast speed, and durable scintillator performance with nanocrystal scintillators. First, this review describes the basic principles and efficiency limitations of scintillation, particularly the large influence of multiple exciton generation in many nanocrystal species, as well as performance metrics. Second, methods for measurement are described. Third, we review the results of the main classes of nanocrystal scintillators, including quantum dots and related particles, perovskites, and doped-phosphor particles. Fourth, scintillation imaging is discussed in terms of the relevant performance metrics and results obtained using nanocrystal materials. Finally, we note the strengths and weaknesses of nanocrystal scintillators and discuss potential areas of further development. [ABSTRACT FROM AUTHOR]

Recently, deep-ultraviolet (DUV) light-emitting devices have attracted attention for various applications. GaN/AlN superlattices have emerged as a promising alternative for achieving high-efficiency DUV emission. To fabricate superlattices with high crystal quality and abrupt interfaces, we have utilized face-to-face-annealed sputter-deposited AlN template substrates characterized by a flat surface and low dislocation density. Furthermore, radio-frequency plasma-assisted molecular beam epitaxy with in situ reflection high-energy electron diffraction monitoring was employed for the growth process. The growth of the superlattices follows a specific sequence. Step 1: AlN growth, Step 2: conversion of Al droplets to AlN, Step 3: GaN growth, and Step 4: evaporation of Ga droplets. This study explored the impact of GaN thickness on the GaN/AlN superlattice. The GaN thickness was linearly controlled by changing the duration of Step 3. This approach allowed for the growth of a flat GaN layer up to 1 monolayer (ML) and achieved superlattices with abrupt interfaces. Single-peak cathodoluminescence (CL) emission at 240–245 nm was observed from the superlattices, with the peak shift toward longer wavelengths as the GaN thickness increased. In contrast, quantum dot-like GaN islands were generated with a thickness of over 1 ML, induced by compressive strain. Superlattices with thicker GaN exhibited broad CL emission with multiple peaks. However, the AlN barrier layer reduced the surface roughness and maintained abrupt interfaces within the superlattices. Therefore, to obtain sharp single-peak UV emission from GaN/AlN superlattices, the growth sequence should be controlled to obtain flat GaN layers without dots. [ABSTRACT FROM AUTHOR]

Traditional LEDs emit light that exhibits incoherence and displays a Lambertian distribution. To achieve linearly polarized (LP) light and control the emission direction, a variety of optical components are required to be stacked, which is unsuitable for compact applications and results in low deflection efficiency. Here, we propose and and numerically simulate a novel single-chip micro-resonant cavity LED (micro-RCLED) device that generates directional LP light by integrating a continuous metasurface. This device includes a bilayer grating at the GaN layer's bottom, providing high transverse electric (TE) reflectivity above 89.5% and an extinction ratio exceeds 57 dB at 500 nm. The top distributed Bragg reflector (DBR) and the bilayer grating together constitute a TE mode Fabry–Pérot resonant cavity. This not only promotes the emission of the TE wave, but also guarantees its collimation with the appropriate phase, thereby enhancing its spatial coherence. A functional metasurface above the DBR layer precisely controls the TE wave's deflection angle. It maintains a low aspect ratio while enabling efficient, large-angle deflection. The simulation results demonstrate that this device provides an effective solution for generating highly spatially coherent directional LP light, with broad potential applications in fields such as polarized light imaging and advanced 3D micro-LED display systems. [ABSTRACT FROM AUTHOR]

Ceria (CeO2) doped with Gd2O3 (Ce1−xGdxO2−x/2) is considered a surrogate of a burnable poison-doped nuclear fuel. Oxygen vacancies (VO) are induced in Ce1−xGdxO2−x/2 by the substitution of Gd3+ ions into the Ce4+ sites, and the oxygen deficiency is mainly controlled by the Gd2O3 concentration. Oxygen vacancies can also be generated by elastic collisions with high-energy electrons for recoil energies of oxygen atoms above the threshold displacement energy (Ed,O). Oxygen vacancy formation is a key factor to determine the radiation tolerance since it enhances the recombination of point defects. The behavior of point defects in ceramics is known to depend on their charge states, although there is only limited research on this topic. In this study, in situ cathodoluminescence (CL) spectroscopy is applied to studying the charge states of defects induced in the oxygen-deficient cerium dioxides, Ce1−xGdxO2−x/2, by using a high-voltage electron microscope for electron energies from 400 to 1250 keV. The CL emission bands of Ce3+ − VO, Ce3+, and F+ centers are obtained for Ce1−xGdxO2−x/2 as well as pure ceria. An energy shift and quenching of CL emission in Ce1−xGdxO2−x/2 are observed. Those effects are discussed as a consequence of the generation of extrinsic oxygen vacancies induced by Gd2O3 doping (VO,ext) and the influence of the respective electronic configurations of the Ce3+ ions and VO,ext. A schematic picture of energy levels of defects in the bandgap of Ce1−xGdxO2−x/2 is suggested. [ABSTRACT FROM AUTHOR]

The synergistic mixing of P 2 O 5 and B 2 O 3 glass formers at a constant concentration of BaO as a glass modifier plays a vital role in generating a single-phase phosphor doped with Eu 2 O 3 for white light-emitting diodes (WLEDs). Herein, a glass system of nominal composition x P 2 O 5 ∙(50- x)B 2 O 3 ∙49.5BaO∙0.5Eu 2 O 3 (0 ≤ x ≤ 50 mol%) was prepared using a melt-quenching technique under normal atmospheric conditions. While the XRD patterns demonstrated the amorphous nature, the SEM micrographs proved the formation of cluster structures. Structural characterization using ATR-FTIR spectroscopy revealed the presence of main vibrational structural units associated with borate and phosphate glass formers, including BO 3 , BO 4 −, P=O, PO 2 −, and PO 3 2−. The IR spectra at x = 0 and 50 mol% exhibit characteristic metaborate and metaphosphate absorption peaks, respectively. In contrast, the mixing of both B 2 O 3 and P 2 O 5 at equal concentrations (x = 25 mol%) has resulted in the absence of absorption peaks assigned to the BO 3 and P=O units, thus indicating the mixed structural effect. This is assigned to the formation of B-O-P bonds, with the BO 4 −, PO 2 −, and PO 3 2− as the main structural units. These structural changes affect the reduction process of Eu3+ to Eu2+, as demonstrated by the corresponding photoluminescence spectra and observed by the cathodoluminescence micrographs. Photoluminescence studies showed tunable emission from red (Eu3+) to white light (Eu2+ and Eu3+) under UV excitation, with the P 2 O 5 content rising from 0 to 50 mol% due to the growing Eu2+ population formed by the reduction of Eu3+. The optical basicity was observed to decrease with the P 2 O 5 content, favouring the reduction process. The demonstrated tunable single-host white phosphor makes this an attractive system for energy-efficient WLED applications. [ABSTRACT FROM AUTHOR]

Series of gadolinium tantalum niobates activated with Eu3+ and Tb3+ ((Gd 1-y-z Eu y Tb z)Nb x Ta 1-x O 4 (x = 0, 0.3, 1; y = 0.6; z = 0.06; 0.15; 0.3)) were obtained for the first time. The formation of substitutional solid solutions was demonstrated. The obtained ceramic solid solutions had a monoclinic structure with I2/a space group. Electron probe microanalysis, photoluminescence (PL) and cathodoluminescence (CL) were used for studies of gadolinium tantalates and tantalum niobates series activated with Eu3++Tb3+. CL and PL spectra, concentration dependences of CL intensity and decay times, as well as excitation spectra for 5D 0 -7F 2 Eu3+ and 5D 4 -7F 5 Tb3+ bands were analyzed. It was shown for the first time that both energy transfer from Tb3+ to Eu3+ ions, and a reverse process – energy transfer from Eu3+ to Tb3+ ions are observed. This reverse process led to a decrease in CL intensity and decay times of europium bands in the presence of terbium 3+ in these materials. Presumably this phenomenon is influenced by anti-Stokes luminescence. This is confirmed by the dependences of anti-Stokes luminescence probability on temperature and excitation density. [ABSTRACT FROM AUTHOR]

ZnO based materials are gaining importance due to its potential applications. In many of these applications, the size, shape and dopability of the structures grown play a determinant role. In the present work, ZnO nano- and microstructures doped with Ru have been grown using the Vapour-Solid (VS) method. Among the different growth parameters, gas flux and initial dopant content seem to play the major role to determine both shape and size of the structures. The main morphologies obtained are self-arranged triangular grids and elongated structures. Based on microscopic observations a simplified growth model is proposed for the grids. An exhaustive characterization has been performed. X-Ray diffraction (XRD) investigations demonstrate good crystallinity and texturing related to preferential growth direction changes due to doping. Luminescence characterization through photo- and cathodoluminescence (PL and CL) techniques reveals typical ZnO near band edge and deep level emission bands at 3.2 and 2.3 eV, respectively. The potential use of elongated structures as waveguides and optical cavities, Fabry-Pèrot resonators, is explored. [ABSTRACT FROM AUTHOR]

Thin films of (Y0.06Ga0.94)2O3:Cr were obtained by radio-frequency (RF) ion-plasma sputtering in an argon atmosphere on polycrystalline polycor and amorphous υ-SiO2 substrates. The surface morphology of the films was studied by atomic force microscopy. It was found that during argon annealing of (Y0.06Ga0.94)2O3:Cr thin films on υ-SiO2 substrates, grain growth occurs perpendicular to the substrate surface. The results of studies of the photoluminescence and cathodoluminescence luminescence of the investigated films are presented. It is shown that thin films of (Y0.06Ga0.94)2O3:Cr on υ-SiO2 substrates under photoexcitation emit in the blue region of the spectrum and this luminescence is due to the luminescence of the (Y0.06Ga0.94)2O3 matrix. Under cathodic excitation, the activator luminescence of the Cr3+ ion dominates with a maximum in the region around 700 nm, due to the electronic transitions 4T2 → 4A2. [ABSTRACT FROM AUTHOR]

The evolution of the cathodoluminescence spectra from commercially available nanodiamonds with high density of nitrogen‐vacancy defects has been studied in a large wavelength range, from 200 to 800 nm, and temperatures from 5 to 300 K, in order to achieve a temperature probe with high spatial resolution. The full width at half maximum of the peak associated to the neutral charge state of the NV center has been found to evolve with temperature in a predictable way, although its value may vary from sample to sample. We have attributed this shift to the differences in the nanodiamonds surface chemistry. [ABSTRACT FROM AUTHOR]

Herein, integrating GaN quantum dots (QDs) within a resonant cavity is focused on. Utilizing metal‐organic vapor phase epitaxy, controlled growth of GaN QDs on AlN is achieved. A deep‐UV distributed Bragg reflector (DBR) with high reflectivity in the 250–300 nm range, using AlN and Al0.7Ga0.3N layers to maximize refractive index contrast, is developed. A 50‐period DBR achieves 98% reflectivity at a wavelength of 272 nm. Scanning transmission electron microscopy and electron energy loss spectroscopy analyses reveal a trisection of DBR periods, attributed to a Ga composition pulling effect during growth. The real structure's reflectivity is simulated and matched well with measured data, though actual reflectivity is lower than the ideal. Cathodoluminescence studies at T = 17 K show emission peaks from both the DBR and the GaN QDs. Further, single‐photon emission is demonstrated with a g(2)(t = 0) value of 0.41 at 272.7 nm, confirming the potential for deep‐UV single‐photon sources. Additionally, the creation of a planar resonant cavity with enhanced emission intensity and vertical nanopillar structures with an aspect ratio of 11 and a diameter of 400 nm confirm the successful integration of GaN QDs in advanced UV photonic structures. [ABSTRACT FROM AUTHOR]

Wide bandgap orthorhombic polymorph of gallium oxide (κ‐Ga2O3) possessing a high spontaneous polarization grown on wurtzite‐type semiconducting substrates is considered to create a high mobility electron channel suitable for applications. Such κ‐Ga2O3 layers are composed of hexagon microprisms whose properties affect the lateral electric conductance. In this work, the structure and recombination properties of extended defects in individual “suspended” thin microprisms are investigated with transmission and scanning electron microscopy techniques (STEM, HR‐TEM) including cathodoluminescence (CL‐SEM). It is established that the microprism is composed of six equisized orthorhombic domains bounded by twin domain boundaries (TDBs) along the directions <110>. Twin domain contains a parallel array of antiphase boundaries (APB) of a high density stretched in the [010] direction. APBs possess steps or interruption and can form double oppositely shifted spatially separated layers (APB dipoles). TDBs on majority of their length are incoherent and serve as the border for the APB terminations. Panchromatic CL maps reveal either enhanced or reduced intensity of APB without noticeable spectral changes. CL intensity enhancement is proposed to be due to enhanced electron–hole generation caused by excess scattering of primary electron beam by APBs in thin films while, in fact, APB exhibits enhanced nonradiative recombination activity. [ABSTRACT FROM AUTHOR]

Eu3+-doped Y2O3-based luminescent materials can be used as a scintillator for electron or high energy β-ray irradiation, which are essential for applications such as electron microscopy and nuclear batteries. Therefore, it is essential to understand their defect mechanisms and to develop materials with excellent properties. In this paper, Y2O3-based transparent ceramics with different Eu3+ doping concentrations were prepared by solid-state reactive vacuum sintering. This series of transparent ceramic samples exhibits strong red emission under electron beam excitation at the keV level. However, color change appears after the high-energy electron irradiation due to the capture of electrons by the traps in the Y2O3 lattice. Optical transmittance, laser-excited luminescence, X-ray photoelectron spectroscopy (XPS), and other analyses indicated that the traps, or the color change, mainly originate from the residual oxygen vacancies, which can be suppressed by high Eu doping. Seen from the cathodoluminescence (CL) spectra, higher doping concentrations of Eu3+ showed stronger resistance to electron irradiation damage, but also resulted in lower emissions due to concentration quenching. Therefore, 10% doping of Eu was selected in this work to keep the high emission intensity and strong radiation resistance both. This work helps to enhance the understanding of defect formation mechanisms in the Y2O3 matrix and will be of benefit for the modification of scintillation properties for functional materials systems. [ABSTRACT FROM AUTHOR]

Novel three-dimensional mesh porous gallium nitride (GaN) substrates were prepared by a two-step method combining electrochemical etching and molten alkali etching. The porous GaN substrate facilitated the successful growth of self-separated GaN crystals via hydride vapor phase epitaxy (HVPE), achieving a thickness of around 1.5 mm. The nucleation and growth process on a three-dimensional mesh porous substrate was demonstrated. High-resolution X-ray diffraction full width at half maximum (FWHM) highlighted the superior quality of the GaN crystals grown on porous substrates. Cathodoluminescence (CL) testing showed a significant reduction in the dislocation density, and transmission electron microscopy (TEM) cross-sectional analysis revealed that the porous structure can effectively impede dislocation propagation. Our work provides a new technological route for the growth of high-quality self-separated GaN crystals. [ABSTRACT FROM AUTHOR]

Due to its capacity to achieve nanometre-scale machining and lithography, a focused ion beam (FIB) is an extended tool for semiconductor device fabrication and development, in particular, for diamond-based devices. However, some technological steps are still not fully optimized for its use. Indeed, ion implantation seems to affect the crystalline structure and electrical properties of diamond. For this study, a boron-doped ([B] ∼ 1017 atoms·cm−3) diamond layer grown by chemical vapour deposition was irradiated using Ga+ by FIB, with 1 nA current and 5, 20, and 30 keV of acceleration voltage. The Ga+ implanted diamond layer has been analysed through cathodoluminescence (CL) and scanning transmission electron microscopy (STEM)-related techniques. The beam penetration depth has been simulated by Monte Carlo calculations of both Ga+ (FIB) and e− (CL) beams at different energies. The comparative CL analysis of the layer as-grown and after implantation revealed peaks related to defects, such as A band, H3 centre, and defects present in the green band region. The STEM studies for the 30 keV implanted sample showed that the diamond lattice is affected by the damage, evidencing amorphisation in the layer with a sp2/sp3 ratio of 1.37, estimated by electron energy loss spectroscopy. Therefore, this study highlights the effects of the Ga+ implantation on the optical and structural characteristics of diamond, using different methods. [ABSTRACT FROM AUTHOR]

Electron beam techniques have been used to analyze the impact of substrate choice and growth parameters on the compositional and optical properties of tin gallium oxide [(SnxGa1−x)2O3] thin films grown by plasma‐assisted molecular beam epitaxy. Sn incorporation and film quality are found to be highly dependent on growth temperature and substrate material (silicon, sapphire, and bulk Ga2O3) with alloy concentrations varying up to an x value of 0.11. Room temperature cathodoluminescence spectra show the Sn alloying suppressing UV (3.3–3.0 eV), enhancing blue (2.8–2.4 eV), and generating green (2.4–2.0 eV) emission, indicative of the introduction of a high density of gallium vacancies (VGa) and subsequent VGa–Sn complexes. This behavior was further analyzed by mapping composition and luminescence across a cross section. Compared to Ga2O3, the spectral bands show a clear redshift due to bandgap reduction, confirmed by optical transmission measurements. The results show promise that the bandgap of gallium oxide can successfully be reduced through Sn alloying and used for bandgap engineering within UV optoelectronic devices. [ABSTRACT FROM AUTHOR]

Cathodoluminescence of a heterostructure with CdS/ZnSe/ZnSSe quantum wells at different electron energies in the range of 3–7 keV has been studied. The dependence of the ratio of the radiation intensity of the quantum well to the intensity of radiation of the ZnSSe barrier layers matched to the GaAs substrate is obtained. This relationship is modeled for different diffusion lengths of nonequilibrium charge carriers in barrier layers and coefficients of trapping of these carriers by a quantum well. It is shown that taking the surface recombination into account gives the best modeling results. An estimate of the diffusion length of nonequilibrium carriers in barrier layers of 25 nm was obtained from comparing the simulation results and the experimental data. The effect of the diffusion length on the characteristics of a semiconductor disk laser based on heterostructures with similar quantum wells is discussed. [ABSTRACT FROM AUTHOR]

Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the first time, a hybrid heterojunction photodetector based on methylammonium lead bromide (MAPbBr3) polycrystalline film deposited on gallium arsenide (GaAs) was presented, along with comprehensive morphological, structural, optical, and photoelectrical investigations. The MAPbBr3/GaAs heterojunction photodetector exhibited wide spectral responsivity, from 540 to 900 nm. The fabrication steps of the prototype device, including a new preparation recipe for the MAPbBr3 solution and spinning, will be disclosed and discussed. It will be shown that extending the soaking time and refining the precursor solution's stoichiometry may enhance surface coverage, adhesion to the GaAs, and film uniformity, as well as provide a new way to integrate MAPbBr3 on GaAs. Compared to the pristine MAPbBr3, the enhanced structural purity of the perovskite on GaAs was confirmed by X-ray Diffraction (XRD) upon optimization compared to the conventional glass substrate. Scanning Electron Microscopy (SEM) revealed the formation of microcube-like structures on the top of an otherwise continuous MAPbBr3 polycrystalline film, with increased grain size and reduced grain boundary effects pointed by Energy-Dispersive Spectroscopy (EDS) and cathodoluminescence (CL). Enhanced absorption was demonstrated in the visible range and broadened photoluminescence (PL) emission at room temperature, with traces of reduction in the orthorhombic tilting revealed by temperature-dependent PL. A reduced average carrier lifetime was reduced to 13.8 ns, revealed by time-resolved PL (TRPL). The dark current was typically around 8.8 × 10−8 A. Broad photoresponsivity between 540 and 875 nm reached a maximum of 3 mA/W and 16 mA/W, corresponding to a detectivity of 6 × 1010 and 1 × 1011 Jones at −1 V and 50 V, respectively. In case of on/off measurements, the rise and fall times were 0.40 s and 0.61 s or 0.62 s and 0.89 s for illumination, with 500 nm or 875 nm photons, respectively. A long-term stability test at room temperature in air confirmed the optical and structural stability of the proposed hybrid structure. This work provides insights into the physical mechanisms of new hybrid junctions for high-performance photodetectors. [ABSTRACT FROM AUTHOR]

Herein, the impact of arsenolite oxide (As2O3) crystallites on the structural and optical properties of porous gallium arsenide (GaAs) is examined, focusing on understanding the potential passivation effect and its influence on material stability and safety. Utilizing a comprehensive set of analytical methods, including cathodoluminescence (CL) spectroscopy, Raman scattering spectroscopy, and X‐ray diffraction, the interaction between the GaAs substrate and arsenolite crystallites is characterized. The results indicate that the crystallites do not significantly alter the electronic and optical properties of the underlying GaAs, suggesting a possible passivating effect that could enhance device performance. However, concerns regarding arsenolite's environmental stability and toxicity prompt a cautious approach to its application. Herein, the need for further research into conditions conducive to natural oxide formation, exploration of alternative passivation strategies, and development of safe and stable oxide layers is underscored. Reproducible results are necessary to confirm the differences in CL signals between samples, as the current findings are based on single measurements. [ABSTRACT FROM AUTHOR]

Carbonates, as secondary minerals found in CM chondrites, have been widely employed for reconstructing the composition of the fluids from which they precipitated. They also offer valuable insights into the hydrothermal evolution of their parent bodies. In this study, we demonstrate that high‐resolution cathodoluminescence (HR‐CL) analyses of calcites derived from the brecciated Cold Bokkeveld CM2 chondrite can effectively reveal subtle compositional features and intricate zoning patterns. We have identified two distinct types of cathodoluminescence (CL) centers: a blue emission band (approximately 375–425 nm), associated with intrinsic structural defects, and a lower energy orange extrinsic emission (around 620 ± 10 nm), indicating the presence of Mn cations. These compositional variations enable discrimination between the calcite grain types previously designated as T1 and T2 in studies of CM chondrites. T1 calcites exhibit variable CL and peripheral Mn enrichments, consistently surrounded by a rim composed of Fe‐S‐rich serpentine–tochilinite assemblage. Conversely, T2 calcites display homogeneous CL and more abundant lattice defects. These polycrystalline aggregates of calcite grains, devoid of serpentine, contain Fe‐Ni sulfide inclusions and directly interface with the matrix. We propose that changes in the Mn content of calcite (indicated by the intensity of orange CL emission) are influenced by variations in redox potential (Eh) and pH of the fluid phase. This proposed hydrothermal evolution establishes a parallel between terrestrial serpentinization followed by carbonation processes and the aqueous alteration of CM chondrites, warranting further exploration and investigation of this intriguing similarity. [ABSTRACT FROM AUTHOR]

Thermal plasma melting was applied to mixtures of MgO, Al 2 O 3 and Tb 4 O 7 to synthesize the MgAl 2 O 4 :Tb3+ (0.1–10 % wt. Tb 4 O 7) luminescent ceramics series. Coarse-grained spinel materials (0.1–1 mm) with preferred crystal orientation were obtained. Structural, morphological (XRD and SEM) and spectroscopic (cathodoluminescence and Raman spectroscopy) analysis were used to investigate the influence of Tb 4 O 7 content on ceramics phase composition, cell parameter of MgAl 2 O 4 :Tb3+, the inversion degree, and luminescent properties. It was found that the thermal plasma synthesized spinel ceramics exhibit a non-controlled inversion degree. The formation of TbAlO 3 as a by-product was observed in materials containing more than 1 wt% of Tb 4 O 7. It was demonstrated that the thermal plasma melting method could be potentially applied for fast preparation of MgAl 2 O 4 :Tb3+ luminescent ceramics. [ABSTRACT FROM AUTHOR]

This paper presents the results of a study on the morphology, structure, and luminescent properties of ceramics synthesized in the radiation field of MeWO4 compositions (where Me is Mg, Ca, and Zn). The synthesis of ceramics was carried out by the direct action of the electron flux on an initial mixture of powders of the given stoichiometric composition. WO3, ZnO, MgO, and CaO powders with particle sizes in the range of 1–50 microns were used for the synthesis of the samples. It was found that the yield of the radiation synthesis reaction (the ratio of the mass of the sample and the charge used), when treated with an electron flux with an energy of 1.4 MeV and a flux power density of 15–18 kW/cm2, was in the range of 75–99%. The synthesis of all compositions was carried out under the same radiation treatment modes, although the melting temperatures of the starting materials varied significantly and ranged from 1473 °C (WO3) to 2825 °C (MgO). The study of the ceramic structure showed that under the radiation effect of powerful radiation fluxes on the charge, a crystalline phase of the appropriate composition formed, regardless of the synthesis modes. The results of XRD studies show that during the radiation treatment of the charge, ceramics are formed mainly with the crystalline phases ZnWO4, MgWO4, and CaWO4. These resulting MeWO4 ceramics can be used for the same purposes as crystals. Photoluminescence (PL) and cathodoluminescence (CL) were studied under excitation using stationary ultraviolet radiation and nanosecond pulses of electron flux. In general, the PL and CL of synthesized ceramic samples ZnWO4, MgWO4, and CaWO4 showed that their luminescent properties are similar to those of luminescence in corresponding crystalline materials. This indicates the formation of a crystalline phase in synthesized ceramic samples. [ABSTRACT FROM AUTHOR]

Temperature-dependent cathodoluminescence spectra were measured for rock salt-structured MgxZn1−xO films with x = 0.95–0.61. The Mg0.95Zn0.05O film exhibited the shortest deep UV peak wavelength of 199 nm (6.24 eV) at 6 K. Relatively high equivalent internal quantum efficiencies of 0.9%–11% were obtained. The Tauc plots, which were obtained from temperature-dependent optical transmittance measurements, exhibited large Stokes-like shifts of 0.7–0.9 eV at 6–300 K. Time-resolved photoluminescence (PL) signals at 7 K exhibited fast and slow decay components. The fast decay component had PL lifetimes of 2.59–3.08 ns, and the slow decay component far exceeded the measurement time range of 12.5 ns. The fast decay constant reflected the transfer lifetime of the photoexcited carriers to certain trapping centers. These centers were tentatively ascribed to Zn-related isoelectronic trapped-hole centers and may be a cause of the large Stokes-like shifts. The signals at 300 K exhibited very short PL lifetimes of 120–180 ps. The PL lifetimes were mainly attributed to the nonradiative recombination lifetime. Simultaneous decreases in the Zn-related isoelectronic trapped-hole centers and the nonradiative recombination centers were found to be necessary to improve the DUV emission properties of RS-MgxZn1−xO films. [ABSTRACT FROM AUTHOR]

Trench defects, resulting in low emission efficiency in green and longer spectrum ranges, are widely observed in III-nitride alloy multiple quantum wells (MQWs), particularly in those with high indium content. There is a lack of understanding of the atomic formation mechanism of trench defects; however, it is crucial to the efficiency of devices. Here, we provided a thermodynamic analysis through first-principles calculations based on the density functional theory combined with experimental confirmation to reveal the atomic formation mechanism of trench defects in the InGaN MQWs system. The In-rich region is easy to form and induces basal plane stacking faults (BSFs) at the interface between the InGaN quantum well and the GaN quantum barrier (QB). The boundary between BSF and non-BSF regions exhibits a much slower growth rate due to the formation of homoelementary bonds, resulting in a V-shaped groove shape. Based on high-angle annular dark field scanning transmission electron microscopy, we observe the trench defects originating from the thick GaN QB layer due to the formation of closed-loop V-shaped grooves and the BSF. Besides, the cathodoluminescence measurements show that the InGaN QW within the defect has excess indium and poor crystal quality. [ABSTRACT FROM AUTHOR]

This paper presents the results of a study on the morphology, structure, and luminescent properties of ceramics synthesized in the radiation field of MeWO4 compositions (where Me is Mg, Ca, and Zn). The synthesis of ceramics was carried out by the direct action of the electron flux on an initial mixture of powders of the given stoichiometric composition. WO3, ZnO, MgO, and CaO powders with particle sizes in the range of 1–50 microns were used for the synthesis of the samples. It was found that the yield of the radiation synthesis reaction (the ratio of the mass of the sample and the charge used), when treated with an electron flux with an energy of 1.4 MeV and a flux power density of 15–18 kW/cm2, was in the range of 75–99%. The synthesis of all compositions was carried out under the same radiation treatment modes, although the melting temperatures of the starting materials varied significantly and ranged from 1473 °C (WO3) to 2825 °C (MgO). The study of the ceramic structure showed that under the radiation effect of powerful radiation fluxes on the charge, a crystalline phase of the appropriate composition formed, regardless of the synthesis modes. The results of XRD studies show that during the radiation treatment of the charge, ceramics are formed mainly with the crystalline phases ZnWO4, MgWO4, and CaWO4. These resulting MeWO4 ceramics can be used for the same purposes as crystals. Photoluminescence (PL) and cathodoluminescence (CL) were studied under excitation using stationary ultraviolet radiation and nanosecond pulses of electron flux. In general, the PL and CL of synthesized ceramic samples ZnWO4, MgWO4, and CaWO4 showed that their luminescent properties are similar to those of luminescence in corresponding crystalline materials. This indicates the formation of a crystalline phase in synthesized ceramic samples.

Luminescent properties of tissue-equivalent detectors have been studied. The detectors are made of lithium tetraborate and doped with magnesium, manganese, or tin. Analysis of the results obtained makes it possible to confirm the complexity of luminescence centers in lithium tetraborate without using structural analysis methods. For the first time, the effect of the method and order of introducing impurities on the storage properties of the studied materials was demonstrated and explained. The synthesis of the lithium tetraborate host occurred through the reaction of H3BO3 and Li2CO3. The binding agent was SiO2. Magnesium, manganese, or tin dopants were introduced during the synthesis of the host or later. The final stage of the synthesis was pressing of the powder into tablets and sintering in argon at 1158 K. The photoluminescence and pulsed cathodoluminescence signals were recorded by CCD-spectrometers. Portable pulsed electron accelerator was used for excitation of cathodoluminescence. Thermally stimulated luminescence was recorded by a special dosimetric reader with a heater and photo muliplier tube after exposure of the samples to an electron beam. Photoluminescence spectra, cathodoluminescence spectra, and glow curves were obtained for five samples of lithium tetraborate with various impurities, namely, magnesium, manganese, and tin. A comparison of the results was made to identify how the intensity signals depend on the amount of impurities and order of their introduction. It was found that the synthesis procedure and the order of introducing the dopants affect the luminescent properties of the materials. It has been suggested that the impurities take different positions in the lithium tetraborate structure. Predominant introduction of a particular impurity at a particular site leads to the following result. Doping with tin provides an increase in the number of luminescence centers of manganese and significantly sensitizes its luminescence, while doping with magnesium leads to the opposite result. The results indicate that it is possible to create advanced tissue-equivalent detectors with tailored luminescent. Depending on the dose of ionizing radiation, the use of material with different sensitivity and radiation resistance is required. Thus, the production of detectors based on lithium tetraborate and the described impurities in the future will give an opportunity to create a promising group of ionizing radiation detectors with various properties.

The combined application of Cathodoluminescence (CL) with Scanning Electron Microscopy (SEM) on paintings and painted surfaces has the potential to identify both organic and inorganic pigments on a micrometre or even nanometre scale. Additionally, the combination with Energy-Dispersive Spectrometry (EDS) allows for a more holistic, elemental, and mineralogical characterization of pigments. In addressing the need for the creation of a robust, open access database of characteristic CL spectra of pigments, a large project has been undertaken, focusing primarily on common organic and inorganic pigments. The present paper focuses on the CL characterization of 10 significant blue pigments in pure powder form: cerulean blue, Egyptian blue, Han blue, indigo, lapis lazuli, Maya blue, phthalo blue, vivianite, ultramarine blue, and zirconium blue. The CL spectra present characteristic bands for most of the pigments, allowing their secure identification, especially when combining the results with the EDS analyses. The effect of binding media and of the mixture of different pigments was also studied, via the analysis of mixtures of pigments with oil painted over canvas. Overall, both the binding medium and the mixture of pigments do not appear to create significant differences in the occurring spectra, thus allowing the identification of individual pigments. EDS and RAMAN spectra are included in order to facilitate comparison with other databases.

ABSTRACT Zircon geochronology provides critical information on the rates and durations of geological processes and enables researchers to explore deep time. However, some zircon datasets show a continuum of concordant ages (‘smear’) without well‐defined age populations. These age smears are typically interpreted to represent variable loss of radiogenic Pb or protracted geological events lasting tens of millions of years. Coupled dissolution‐precipitation replacement of zircon has been suggested as one process that may produce these complex age datasets. Here, we react fragments of the well characterised Mud Tank zircon standard with natural intermediate and mafic melts (0.9 GPa, 1100–1180°C) to test if short‐term exposure to a melt can modify the geochronological patterns of zircon. Our observations show that within a short duration (18 h to 3.5 days), most Mud Tank zircon fragments display microstructural and/or chemical evidence for modification by dissolution at fragment boundaries along with partial replacement by coupled dissolution‐precipitation processes. The replaced zircon domains have U–Pb ages that smear over one hundred million years, between 764–647 Ma, illustrating variable mobility and redistribution of the U and Pb isotopes. Our experiments demonstrate that zircon modified by coupled dissolution‐precipitation replacement may not faithfully record the age or duration of geological events and that investigation of zircon microstructure in high‐resolution backscattered electron, cathodoluminescence imaging and/or Raman mapping is needed to better understand complex zircon geochronological datasets. [ABSTRACT FROM AUTHOR]

Hexagonal boron nitride (hBN) holds promise as a solid state, van der Waals host of single photon emitters for on‐chip quantum photonics. The B‐center defect emitting at 436 nm is particularly compelling as it can be generated by electron beam irradiation. However, the emitter generation mechanism is unknown, the robustness of the method is variable, and it has only been applied successfully to thick flakes of hBN (≫ 10 nm). Here, it is used in situ time‐resolved cathodoluminescence (CL) spectroscopy to investigate the kinetics of B‐center generation. It is shown that the generation of B‐centers is accompanied by quenching of a carbon‐related emission at ≈305 nm and that both processes are rate‐limited by electromigration of defects in the hBN lattice. It identifies problems that limit the efficacy and reproducibility of the emitter generation method and solve them using a combination of optimized electron beam parameters and hBN pre‐and postprocessing treatments. It is achieved B‐center quantum emitters in hBN flakes as thin as 8 nm, elucidate the mechanisms responsible for electron beam restructuring of quantum emitters in hBN, and gain insights toward the identification of the atomic structure of the B‐center quantum emitter. [ABSTRACT FROM AUTHOR]

The Songshugang deposit is a large Ta–Nb deposit in South China, with Ta–Nb mineralization associated genetically with the granite and pegmatite. A diversity of quartz from topaz–albite granite, quartz–mica pegmatite, quartz–feldspar pegmatite, and quartz–fluorite pegmatite at Songshugang was studied by CL and LA–ICP–MS in order to constrain enrichment mechanisms of Nb and Ta and to find geochemical indicators of quartz for rare metal deposits. Cathodoluminescence image illuminates a canvas of complexity, the quartz from topaz–albite granite, quartz–mica pegmatite, quartz–feldspar pegmatite, and quartz–fluorite pegmatite, exhibits numerous dark CL streaks, patches, and a series of healed fractures. These textures suggest that the rocks were fractured because of deep crustal pressure, and underwent later hydrothermal metasomatism and quartz filling. The quartz from quartz–fluorite pegmatite present limited patches or fractures but distinct growth bands, indicating that the melt fluid composition during the formation of quartz at this stage varies greatly and is less affected by mechanical fragmentation. The LA–ICP–MS analysis of quartz shows that there is a positive correlation between Al and Li in the quartz from topaz–albite granite, quartz–mica pegmatite, quartz–feldspar pegmatite, to quartz–fluorite pegmatite, indicating that Al mainly enters the quartz lattice through charge compensation substitution mechanism with Li. However, our data deviate from the theoretical Li:Al mass ratio of ~ 1:3.89 in quartz, indicating that there may be competition between H+ and Li in a water-rich magmatic environment. The quartz from topaz–albite granite is enriched in K and Na elements, and the quartz from quartz–fluorite pegmatite is enriched in fluorite with a low Ca content in quartz, further elucidating that these rocks were subjected to hydrothermal metasomatism. From topaz–albitite granite to quartz–fluorite pegmatite, Al, Li and Ge content and Al/Ti, Ge/Ti, Sb/Ti ratios in quartz gradually increased, but Ti content gradually decreased, reflecting the high evolution of magma, which can enrich rare metal elements. Based on the characteristics of quartz CL textures and trace elements in topaz–albite granite, quartz–mica pegmatite, quartz–feldspar pegmatite, and quartz–fluorite pegmatite, combined with the albitization and K-feldspathization of rocks, it is suggested that the Nb–Ta mineralization in Songshugang may be influenced by the combined action of magmatic crystallization differentiation and fluid metasomatism. By comparing the quartz in the Songshugang pluton with the quartz in the granite type and pegmatite type rare metal deposits recognized in the world, the Songshugang pegmatite share similarities with the LCT-type pegmatite. Combined with previous studies, the Ge/Ti > 0.1 and Ti < 10 ppm, as well as Al, Li, Ge, Sb, K, Na contents and Al/Ti, Sb/Ti ratios in quartz have the potential to be a powerful exploration marker for identifying granite-like pegmatitic Nb–Ta deposits in other places. [ABSTRACT FROM AUTHOR]

This paper focuses on the role of the most common mineralogical techniques applied to the identification of the different statuary qualities in white, grey, and black Göktepe marble. For this purpose, the case of a Roman sculpture marble collection from the rural villa of Valdetorres de Jarama (central Iberia), dating to the 4th century AD, is presented. The mythological statuary, combining white, grey, and black marbles, is one of the most outstanding marble collections in the Aphrodisian style found in Hispania. The analytical results (achieved through Petrography, Cathodoluminescence, C and O isotopes, and Sr and Mn concentration) support the identification of two varieties of "black" Göktepe, traditionally referred to as bigio morato and bigio antico, as well as the best statuary quality of white Göktepe. In addition, the analytical identification of other Asiatic marbles in the Valdetorres collection, a white coarse-grain originally from the quarries of Aphrodisias city, and one small piece identified as Carian red from Iasos, corroborates the already suggested strong connection existing between artists and the stone material they chose for their works. Finally, the identification carried out on the marble of the bases that served as seats for the sculptures is noteworthy, as it is a white marble of lower quality whose analytical characteristics are consistent with the Microasiatic marble of Denizli. The use of these exotic and exceptional raw materials confirms the taste for luxury and decorative richness in Late Antique Hispanic rural villae and contributes to a better understanding of the distribution of Aphrodisian production and trade networks with the Western Roman provinces. [ABSTRACT FROM AUTHOR]

It has recently been demonstrated that electron beam injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length with injection duration, followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) at meta-stable native defect levels in the material, which in turn blocks recombination through these levels. In this work, in contrast to previous studies, the effect of electron injection in p-type Ga2O3 was investigated using cathodoluminescence technique in situ in scanning electron microscope, thus providing insight into minority carrier lifetime behavior under electron beam irradiation. The activation energy of ∼0.3 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects. [ABSTRACT FROM AUTHOR]

A series of characterization methods involving high-resolution X-ray diffraction (HR-XRD), electron channel contrast imaging (ECCI), cathodoluminescence microscopy (CL), and atomic force microscopy (AFM) were applied to calculate the dislocation density of GaN-on-Si epitaxial wafers, and their performance was analyzed and evaluated. The ECCI technique, owing to its high lateral resolution, reveals dislocation distributions on material surfaces, which can visually characterize the dislocation density. While the CL technique is effective for low-density dislocations, it is difficult to accurately identify the number of dislocation clusters in CL images as the density increases. The AFM technique analyzes surface dislocation characteristics by detecting surface pits caused by dislocations, which are easily affected by sample and probe conditions. A prevalent method for assessing the crystal quality of GaN is the rocking curve of HR-XRD (ω-scan), which calculates the dislocation density based on the FWHM value of the curves. By comparing the above four dislocation characterization methods, the advantages and limitations of each method are clarified, which also verifies the applicability of D B = β 2 9 b 2 for GaN-on-Si epitaxial wafers. This provides an important reference value for dislocation characterization in GaN-on-Si materials. The accuracy evaluation of dislocation density can truly and reliably reflect crystal quality, which is conducive to further optimization. Furthermore, this study can also be applied to other heterogeneous or homogeneous epitaxial materials. [ABSTRACT FROM AUTHOR]

Cathodoluminescence and electron backscatter diffraction have been applied to exactly the same grain boundaries (GBs) in a Cu(In,Ga)S2 solar absorber in order to investigate the influence of microstructure on the radiative recombination behaviour at the GBs. Two different types of GB with different microstructure were analysed in detail: random high angle grain boundaries (RHAGBs) and Σ3 GBs. We found that the radiative recombination at all RHAGBs was inhibited to some extent, whereas at Σ3 GBs three different observations were made: unchanged, hindered, or promoted radiative recombination. These distinct behaviours may be linked to atomic-scale grain boundary structural differences. The majority of GBs also exhibited a small spectral shift of about ±10 meV relative to the local grain interior (GI) and a few of them showed spectral shifts of up to ±40 meV. Red and blue shifts were observed with roughly equal frequency. [ABSTRACT FROM AUTHOR]

There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media, and cloud technologies. In addition to increasing storage density, new solutions should provide long‐term data archiving that goes far beyond traditional magnetic memory, optical disks, and solid‐state drives. Here, a concept of energy‐efficient, ultralong, high‐density data archiving is proposed, based on optically active atomic‐size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature‐dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near‐infrared laser excitation, grayscale encoding and multi‐layer data storage, the areal density corresponds to that of Blu‐ray discs. Furthermore, it is demonstrated that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron‐beam excitation. [ABSTRACT FROM AUTHOR]

Subsurface damage (SSD) structures induced by mechanical polishing of gallium nitride (GaN) substrates are comprehensively investigated using atomic force microscopy, cathodoluminescence (CL) imaging, and cross‐sectional transmittance electron microscopy. The low removal rate of the CMP process is a barrier to high productivity of a GaN wafering process; therefore, reducing the chemical mechanical polishing (CMP) process time by reducing the depth of SSD induced by mechanical processing is an active research area. To better understand the SSD structures, the surface roughness, SSD depth, and SSD distributions induced by mechanical polishing are quantitatively evaluated in this study. The SSD structures induced by mechanical polishing can be quantitatively exhibited as the SSD distribution with the damage strength at the outermost surface and the damage propagation, which are obtained by CMP process time‐resolved CL imaging method. On the basis of the analysis results, a schematic model of the SSD structures for mechanically polished GaN substrates is proposed. [ABSTRACT FROM AUTHOR]

The effect of microbial binding for the stabilization of steep carbonate slopes is well documented in Cenozoic examples but its significance and relationship with abiotic marine cements in Paleozoic reef systems and steep slopes is not clearly established. Here, samples from a Late Silurian (Ludlovian) reef complex are evaluated by using an integrated approach that involves petrographic and isotope analyses, cathodoluminescence microscopy, and environmental scanning electron microscopy. This study reveals the in situ production of mineral fabrics of microbial origins, including micrite, peloidal micrite with dendritic fabrics, meniscus, and bridge-like cements. This study stresses the leading role of microbes in the early lithification stages that led to the stabilization of Silurian steep carbonate slopes. These findings are further supported by the occurrence of fossilized microbes and extracellular polymeric substance. The micritic cements are the first step in the diagenetic paragenesis followed by abiotic fibrous and equant calcite cements whose stable isotope values are in concert with estimated values of calcite precipitated in equilibrium with Silurian seawater. Results from this project provide insights into the relationship between microbial binding and early abiotic marine cements in ancient reef systems and, further, provide evidence for a consortia of microbes that existed 440 Ma ago. [ABSTRACT FROM AUTHOR]

A multimethod approach aimed at characterizing carbonate parietal deposits and at proposing a chronology for these carbonate crusts is described. Dating was performed by radiometric methods (C-14 for recent samples and U series) on samples that had been characterized beforehand using optical and cathodoluminescence microscopy and Fourier transform infrared microspectroscopy. For the U series, high precision on U–Th ages was achieved using liquid phase multicollector inductively coupled plasma mass spectrometry (ICP-MS) applied to large samples, while laser ablation single collector inductively coupled plasma sector field mass spectrometry (ICP-SFMS) provided information on the reliability of the sampling with a high spatial resolution. This methodology, based on the combination of these two techniques reinforced by the information obtained by the calcite characterization methods, was applied to carbonate deposits from the cave of Trou du Renard (Soyons, France). The ages obtained with the two U–Th dating techniques are comparable and illustrate that different laminae were deposited at different rates in the samples. In the future, this procedure, based on the mineralogical and geochemical characterization of the samples and their dating by radiometric methods, will be applied to the layers of parietal carbonates deposited on Palaeolithic decorated walls. When the crystallization is slow, the U/Th dating method by imaging technique is of interest, as well as that by multicollector ICP-MS in liquid phase. The development of robust dating methods on very small quantities of material will make it possible to define the chronological framework of cave rock art. [ABSTRACT FROM AUTHOR]

(In, Ga) alloy droplets are used to catalyse the growth of (In, Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To incorporate more than 10% of In, a high In/(In+Ga) flux ratio above 0.7 is required. We report a maximum In content of almost 30% in bulk (In, Ga)As nanowires for an In/(In+Ga) flux ratio of 0.8. However, with increasing In/(In+Ga) flux ratio, the nanowire length and diameter are notably reduced. Using photoluminescence and cathodoluminescence spectroscopy on nanowires covered by a passivating (In, Al)As shell, two luminescence bands are observed. A significant segment of the nanowires shows homogeneous emission, with a wavelength corresponding to the In content in this segment, while the consumption of the catalyst droplet leads to a spectrally-shifted emission band at the top of the nanowires. The (In,Ga)As nanowires studied in this work provide a new approach for the integration of infrared emitters on Si platforms. [ABSTRACT FROM AUTHOR]

We have investigated the optical properties of heterostructured InGaN platelets aiming at red emission, intended for use as nano-scaled light-emitting diodes. The focus is on the presence of non-radiative emission in the form of dark line defects. We have performed the study using hyperspectral cathodoluminescence imaging. The platelets were grown on a template consisting of InGaN pyramids, flattened by chemical mechanical polishing. These templates are defect free, whereas the dark line defects are introduced in the lower barrier and tend to propagate through all the subsequent layers, as revealed by the imaging of different layers in the structure. We conclude that the dark line defects are caused by stacking mismatch boundaries introduced by multiple seeding and step bunching at the edges of the as-polished, dome shaped templates. To avoid these defects, we suggest that the starting material must be flat rather than dome shaped. [ABSTRACT FROM AUTHOR]

The combined application of Cathodoluminescence (CL) with Scanning Electron Microscopy (SEM) on paintings and painted surfaces has the potential to identify both organic and inorganic pigments on a micrometre or even nanometre scale. Additionally, the combination with Energy-Dispersive Spectrometry (EDS) allows for a more holistic, elemental, and mineralogical characterization of pigments. In addressing the need for the creation of a robust, open access database of characteristic CL spectra of pigments, a large project has been undertaken, focusing primarily on common organic and inorganic pigments. The present paper focuses on the CL characterization of 10 significant blue pigments in pure powder form: cerulean blue, Egyptian blue, Han blue, indigo, lapis lazuli, Maya blue, phthalo blue, vivianite, ultramarine blue, and zirconium blue. The CL spectra present characteristic bands for most of the pigments, allowing their secure identification, especially when combining the results with the EDS analyses. The effect of binding media and of the mixture of different pigments was also studied, via the analysis of mixtures of pigments with oil painted over canvas. Overall, both the binding medium and the mixture of pigments do not appear to create significant differences in the occurring spectra, thus allowing the identification of individual pigments. EDS and RAMAN spectra are included in order to facilitate comparison with other databases. [ABSTRACT FROM AUTHOR]

Intrinsic defects and their concentrations in hexagonal boron nitride (h‐BN) play a key role in single‐photon emission. In this study, the optical properties of large‐area multilayer h‐BN‐on‐sapphire grown by metal‐organic chemical vapor deposition are explored. Based on the detailed spectroscopic characterization using both cathodoluminescence (CL) and photoluminescence (PL) measurements, the material is devoid of random single‐point defects instead of a few clustered complex defects. The emission spectra of the measurements confirm a record‐low‐defect concentration of ≈104 cm−2. Post‐annealing, no significant changes are observed in the measured spectra and the defect concentrations remain unaltered. Through CL and PL spectroscopy, an optically active boron vacancy spin defect is identified and a novel complex defect combination arising from carbon impurities is revealed. This complex defect, previously unreported, signifies a unique aspect of the material. In these findings, the understanding of defect‐induced optical properties in h‐BN films is contributed, providing insights for potential applications in quantum information science. [ABSTRACT FROM AUTHOR]

Alloying small quantities of silver into Cu(In,Ga)Se2 is shown to improve the efficiency for wide and low bandgap solar cells. Low bandgap industrial Cu(In,Ga)(S,Se)2 absorbers are studied, substituting less than 10% of the copper with silver, using absolute photoluminescence and cathodoluminescence spectroscopy. Silver improves the grain size and promotes the interdiffusion of Ga and In across the depth of the absorber, resulting in a smoother bandgap gradient. However, a certain lateral inhomogeneity is observed near the front and back sides. The nonradiative losses in the bare absorbers are reduced by up to 30 meV. [ABSTRACT FROM AUTHOR]

This work carefully studied the transition from 3D perovskite to 2D perovskite. Our system includes single crystals (SCs) of MAPbBr3, which were dipped in a solution of barrier molecules. Three monoammonium cations and one di‐ammonium cation were studied. Absorbance and cathodoluminescence were used to follow the formation of low‐dimensional perovskite on the SC surface. Quantitative nuclear magnetic resonance and scanning electron microscopy assist in quantitatively tracking the exchange process. We followed the barrier molecules′ concentration during the exchange process and their penetration depth into the 3D single crystal. The short aliphatic chain penetrates much farther into the crystal (ca. 450 μm) than the long aliphatic chain barrier molecule. In contrast, the process time is the opposite: the long aliphatic chain requires 5 days to achieve an equilibrium state compared with 15 days for the short aliphatic chain. Ab initio calculations indicate that the exchange process initiates due to the methylammonium vacancies on the surface, and the process is inhibited by the interactions between the −NH3 group and the PbBr2 planes. This work sheds light on the kinetics and thermodynamics of the transition from 3D to 2D perovskites, which is important for stabilizing the hybrid perovskites. [ABSTRACT FROM AUTHOR]

Cross-sectional transmission electron microscopy studies often reveal a-type dislocations located either below or above the interfaces in InGaN/GaN structures deposited along the [0001] direction. We show that these dislocations do not emerge during growth but rather are a consequence of the stress state on lateral surfaces and mechanical processing, making them a post-growth effect. In cathodoluminescence mapping, these defects are visible in the vicinity of the edges of InGaN/GaN structures exposed by cleaving or polishing. Finite element calculations show the residual stress distribution in the vicinity of the InGaN/GaN interface at the free edge. The stress distribution is discussed in terms of dislocation formation and propagation. The presence of such defects at free edges of processed devices based on InGaN layers may have a significant negative impact on the device performance. [ABSTRACT FROM AUTHOR]