1. Via-less microstrip to rectangular waveguide transition on InP
- Author
-
Paolo Ghelfi, Bilal Hussain, Andreas Stohr, Giovanni Serafino, and Antonella Bogoni
- Subjects
Materials science ,III-V semiconductors ,etching ,indium compounds ,microstrip transitions ,millimetre wave devices ,rectangular waveguides ,waveguide transitions ,rectangular waveguide transition ,Indium-Phosphide ,millimeter frequency range ,isotropic etching profile ,InP substrate ,passive devices ,lossy hybrid platform ,millimeter wave ,rectangular waveguide structure ,vialess microstrip ,frequency 220.0 GHz to 320.0 GHz ,bandwidth 30.0 GHz ,InP ,Indium phosphide ,III-V semiconductor materials ,Rectangular waveguides ,Microstrip ,Substrates ,Optical waveguides ,Etching ,Terahertz radiation ,02 engineering and technology ,chemistry.chemical_compound ,Planar ,0202 electrical engineering, electronic engineering, information engineering ,Elektrotechnik ,business.industry ,020206 networking & telecommunications ,Isotropic etching ,chemistry ,Extremely high frequency ,Return loss ,Optoelectronics ,Millimeter ,business - Abstract
Indium-Phosphide (InP) is one of the most common materials used for realizing active devices working in the millimeter frequency range. The isotropic etching profile of InP substrates limits the realization of passive devices, thus requiring an expensive and lossy hybrid platform. This paper presents a via-less, cost-effective and efficient solution for InP substrate. By using the proposed planar solution, it is demonstrated that rectangular waveguides can be realized on InP by fabricating a bed of nails structure which acts as a reflecting boundary for an impinging millimeter wave. As a proof of concept, a transition from microstrip to rectangular waveguide structure is realized within H-band (220-320 GHz) with a return loss of -18dB over a bandwidth of 30 GHz.
- Published
- 2019