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505 results on '"Zou, Xingli"'

5. Prognostic correlation analysis of multiple myeloma based on HALP score of peripheral blood before chemotherapy

Author

CHEN Min, AN Liying, LIN Xiaojing, ZHAO Pan, ZOU Xingli, WEI Jin, and NI Xun

Subjects
multiple myeloma, prognosis, hemoglobin, lymphocyte, albumin, platelet, Diseases of the blood and blood-forming organs, RC633-647.5, Medicine
Abstract

[Objective] To explore the predictive value of HALP score for prognosis in patients with multiple myeloma (MM). [Methods] A retrospective analysis was conducted on laboratory indicators and related clinical data of newly diagnosed multiple myeloma (NDMM) patients, treated at the Affiliated Hospital of North Sichuan Medical College from January 2016 to October 2023, prior to their first treatment. The HALP score was calculated, and the optimal cutoff value for HALP was determined using X-tile software. Survival analysis was performed using Kaplan-Meier curves for high HALP and low HALP groups. Univariate and multivariate analyses were conducted using the Cox regression model, and a forest plot was generated using Graphpad Prism to illustrate factors that may impact patient prognosis. The predictive ability of HALP score combined with β2-microglobulin and ECOG score for prognosis in MM patients was evaluated using receiver operating characteristic curve (ROC) analysis. [Results] A total of 203 MM patients were included, with the optimal cutoff value for HALP score being 29.15 (P

Published
2025
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11. Generic bond energy formalism within the modified quasichemical model for ternary solutions

Author

Wang, Kun, Li, Dongyang, Zou, Xingli, Cheng, Hongwei, Li, Chonghe, Lu, Xionggang, and Chou, Kuochih

Subjects
Condensed Matter - Materials Science
Abstract

The Modified Quasichemical Model in the Pair Approximation (MQMPA) can effectively capture the thermodynamic features of a binary solution with Short-Range Ordering (SRO). If the model is used to treat a ternary solution, a geometric interpolation method must be employed to extend the bond energy expression from binary to ternary formalism. The aim of the present work is to implement such extension by means of a generic geometric interpolation approach. The generic method is unbiased and can be transformed into the widely used Kohler, Toop and Muggianu approaches with special interpolation parameters. The interpolation parameters can be calculated by the integration method as well as be optimized by ternary experimental data. The generic bond energy formalism (GBEF) has thus been derived to provide the MQMPA great flexibility to describe ternary solutions with complex configurations. Moreover, the GBEF is more concise than the formula derived by a combinatorial Kohler-Toop method. The concise GBEF is in the respect more conveniently programmed. Eventually, the Cu-Li-Sn liquid where both SRO and clustering among atoms occur is employed to validate the effectiveness and reliability of the GBEF within the MQMPA., Comment: 20 pages, 5 figures

Published
2022

31. Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation.

Author

Zhu, Jiyuan, Hu, Shen, Chen, Bojia, Wei, Shice, Zhang, Yu, Wu, Xuefeng, Zou, Xingli, Lu, Xionggang, Sun, Qingqing, Zhang, David W., and Ji, Li

Abstract

Due to the limitation of inherent ultra-high electron concentration, the electrical properties of In2O3 resemble those of conductors rather than semiconductors prior to special treatment. In this study, the effect of various annealing treatments on the microstructure, optical properties, and oxygen vacancies of the films and transistors is systematically investigated. Our finding reveals a progressive crystallization trend in the films with increasing annealing temperature. In addition, a higher annealing temperature is also associated with the reduction in the concentration of oxygen vacancies, as well as an elevation in both optical transmittance and optical bandgap. Furthermore, with the implementation of annealing process, the devices gradually transform from no pronounced gate control to exhibit with excellent gate control and electrical performances. The atomic layer deposited Hf-doped In2O3 thin film transistor annealed at 250 °C exhibits optimal electrical properties, with a field-effect mobility of 18.65 cm2 V−1 s−1, a subthreshold swing of 0.18 V/dec, and an Ion/Ioff ratio of 2.76 × 106. The results indicate that the impact of varying annealing temperatures can be attributed to the modulation of oxygen vacancies within the films. This work serves as a complementary study for the existing post-treatment of oxide films and provides a reliable reference for utilization of the annealing process in practical applications. [ABSTRACT FROM AUTHOR]

Published
2024
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37. Facile Electrosynthesis of Ti3AlC2 and Its Derived Porous Carbon in Molten Salt: Facile Electrosynthesis of Ti3AlC2 and Its Derived Porous Carbon: Jiang, Pang, S. Chen, Tian, Zhang, Wang, Xia, C. Chen, Li, Xu, Lu, and Zou

Author

Jiang, Zhenqiang, Pang, Zhongya, Chen, Shun, Tian, Feng, Zhang, Xueqiang, Wang, Fei, Xia, Xuewen, Chen, Chaoyi, Li, Guangshi, Xu, Qian, Lu, Xionggang, and Zou, Xingli

Subjects
PHYSICAL & theoretical chemistry, UNIFORM spaces, FUSED salts, ENERGY storage, ELECTROSYNTHESIS
Abstract

MAX phases and their derived materials (MXenes and CDCs) have received widespread attention because of their unique functional properties. However, the controllable synthesis of MAX phases and their derived powder materials remains challenging, and conventional preparation usually involves high-temperature sintering, mechanical crushing, and acid etching processes. Herein, this paper reports a facile electrochemical strategy for the synthesis of Ti3AlC2 powder and its derived carbon (Ti3AlC2-CDC) from TiO2/Al2O3/C precursors. In this strategy, the synthesis of Ti3AlC2 is achieved through molten salt electrolysis of a TiO2/Al2O3/C cathode directly, and the Ti3AlC2-CDC is then prepared through a subsequent molten salt electrochemical etching process. Systematical characterization and analysis of the synthesized Ti3AlC2 and Ti3AlC2-CDC were conducted, and the results indicate that the Ti3AlC2 synthesized by molten salt electrolysis is a micro-size powder, exhibiting a distinct lamellar structure with uniform element distribution. The synthesized Ti3AlC2-CDC powder exhibits a high specific surface area of 1268 m2 g−1 and excellent hierarchical porosity. As a conceptual demonstration, the energy storage properties of Ti3AlC2-CDC as electrode materials for lithium-ion battery (showing a specific capacity of 330 mAh g−1) and sodium-ion battery (showing a specific capacity of 100 mAh g−1) were preliminarily investigated, demonstrating excellent cycle stability in both cases. In summary, this work demonstrates the controllable synthesis of Ti3AlC2 and Ti3AlC2-CDC, offering advanced technological insights into the advancement of MAX phases and their derived powder materials. [ABSTRACT FROM AUTHOR]

Published
2025
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41. Scalable Fabrication Methods of Large‐Area (n‐i‐p) Perovskite Solar Panels

Author

Samantaray, Manas Ranjan, primary, Wang, Zhe, additional, Hu, Dingqin, additional, Yuan, Mingjian, additional, Song, Haisheng, additional, Li, Fang-Fang, additional, Jia, Guohua, additional, Ji, Li, additional, Zou, Xingli, additional, Shen, Hsin-Hui, additional, Xi, Bangzi, additional, Tian, Yanqing, additional, Xu, Xue-Qing, additional, Lee, Duu-Jong, additional, and Hsu, Hsien-Yi, additional

Published
2024
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42. Tunable-performance all-oxide structure field-effect transistor based atomic layer deposited Hf-doped In2O3 thin films.

Author

Zhu, Jiyuan, Hu, Shen, Chen, Bojia, Zhang, Yu, Wei, Shice, Guo, Xiangyu, Zou, Xingli, Lu, Xionggang, Sun, Qingqing, Zhang, David W., and Ji, Li

Subjects
FIELD-effect transistors, METAL oxide semiconductor field-effect transistors, THIN films, THIN film transistors, ATOMIC layer deposition, TRANSISTORS, CARRIER density
Abstract

The relocation of peripheral transistors from the front-end-of-line (FEOL) to the back-end-of-line (BEOL) in fabrication processes is of significant interest, as it allows for the introduction of novel functionality in the BEOL while providing additional die area in the FEOL. Oxide semiconductor-based transistors serve as attractive candidates for BEOL. Within these categories, In2O3 material is particularly notable; nonetheless, the excessive intrinsic carrier concentration poses a limitation on its broader applicability. Herein, the deposition of Hf-doped In2O3 (IHO) films via atomic layer deposition for the first time demonstrates an effective method for tuning the intrinsic carrier concentration, where the doping concentration plays a critical role in determine the properties of IHO films and all-oxide structure transistors with Au-free process. The all-oxide transistors with In2O3: HfO2 ratio of 10:1 exhibited optimal electrical properties, including high on-current with 249 µA, field-effect mobility of 13.4 cm2 V−1 s−1, and on/off ratio exceeding 106, and also achieved excellent stability under long time positive bias stress and negative bias stress. These findings suggest that this study not only introduces a straightforward and efficient approach to improve the properties of In2O3 material and transistors, but as well paves the way for development of all-oxide transistors and their integration into BEOL technology. [ABSTRACT FROM AUTHOR]

Published
2023
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