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This study considers the effect of the chemical reaction of slurry for chemical mechanical polishing and combines an analytical model of polishing times and the theory of specific downward force energy to construct a theoretical model to calculate abrasive removal depth of a silicon wafer that is polished by a cross-groove pattern polishing pad. Specific down force energy is used to calculate the thickness of the chemical reaction layer of the silicon wafer. A comparison of the average abrasive removal depths and the surface morphology of silicon wafer that uses simulation and experiment shows that the simulation results for the average abrasive removal depths and the surface morphology of silicon wafer are acceptable.

The present study proposed a modified decision-making trial and evaluation laboratory (DEMATEL) method. This innovation method involves collecting the repeated or identically defined technical keywords of patent techniques related to light-emitting diode (LED) bicycle light to determine the ratios of the normalized numerical values of these technical keywords by using one technical domain as the primary domain and another as a variable. The values obtained are then converted to mutual influence levels on a scale of 0 to 4, replacing the conventional expert questionnaire. In this study, in accordance with the operational steps of the decision-making trial and evaluation laboratory method, a general relational influence matrix, direct and indirect relationships diagram, and values of centrality (D + R) and causality (D − R) were obtained. A causal diagram was therefore created. The causal diagram was drawn using values of (D + R) and (D − R) as the two axes and facilitated determining the levels of mutual influence between technical domains. In accordance with the proposed modified decision-making trial and evaluation laboratory method, this study collected patents related to LED bicycle light; moreover, the normalized numerical values of key technical, part/component, and function words that appeared in these patents were calculated. Furthermore, clusters of technical and part or component words were defined in accordance with the first-layer technical category. The second-layer technical categories and functional categories were subsequently defined under the first-layer technical categories to establish the technique–function matrix, thereby dividing the techniques related to LED bicycle light into seven main technical domains. This study then analyzed patent life span. Patent life span was calculated using the announcement date of related patents. Finally, this study investigated the development potential of each technical domain of LED bicycle light by conducting a combined analysis of causal diagram obtained by modified DEMATEL method, activity trend chart of techniques, and patent life spans. The proposed patent analysis method and results can serve companies and engineers as references to facilitate developing new patents.

This article studies the change of specific down force energy and cutting depth of sapphire substrate when sapphire substrates were dipped in different temperatures of slurry. It involved applying small down force in cutting sapphire substrates by atomic force microscope (AFM) before dipping them in slurry in order to obtain the SDFE value of without dipping slurry. Next, small down force was applied to cut sapphire substrates dipped in slurry for varying dipping temperatures to obtain the SDFEreaction values of dipping slurry with different dipping temperatures. Nanocutting was performed by AFM with a small constant down force to obtain the cutting depths of sapphire substrate for the different dipping temperatures of slurry. The results of this study indicated that the dipping temperature of slurry increased, the SDFEreaction value of sapphire substrate decreased and the cutting depth of sapphire substrate with a constant down force increased.

The study mainly explores the surface profile of sapphire wafer after polishing by the method of chemical mechanical polishing (CMP). Pattern-free polishing slurry with SiO2 abrasive particle is used to polish the sapphire wafer. This paper observes the phenomena of surface profile and surface scratches of sapphire wafer under different pressures and different rotational velocities during CMP. The study uses atomic force microscope (AFM) to scan the surface of sapphire wafer focusing on three axial lines of 0∘, 45∘and 90∘from the position of near edge passing the center of sapphire wafer. The study also selects five positions on a specific area to draw the surface profiles on the axial lines of 0∘, 45∘and 90∘. It can be observed that the central area of sapphire wafer has lower depression than other areas because the central area is polished more polishing times. Besides, the depression on the central area of sapphire wafer has a greater depression value and it has more and larger surface scratches when it is polished under a greater down force and at a faster rotational velocity.

An innovative theoretical model and experimental method were proposed to calculate nanoscale thickness of the chemical reaction layer of sapphire substrates and analyzed the various slurry dipping temperatures affecting the thickness of the chemical reaction layer. The slurry used in this study was suitable to use in the CMP experiment of polishing the sapphire substrate. A small down force was applied to cut sapphire substrates dipped in slurry for varying dipping temperatures to obtain the specific down force energy (SDFE) values corresponding to the thickness of chemical reaction layer. Nanocutting was performed with a cutting depth interval of approximately 0.05 nm to obtain the SDFE values. Thus, changes in SDFE values is a critical target. The measured SDFE values were then used to develop a theoretical method for calculating the thickness of the chemical reaction layer of sapphire substrate according to the various dipping temperatures of dipping slurry. AFM nanoscale cutting with a cutting depth interval of approximately 0.01 nm was conducted and found the changes in the SDFE values, which were used to measure the thickness of the chemical reaction layer for each slurry dipping temperatures. The experimental results verify that the proposed theoretical method is feasible. Finally, it conducted a regression analysis for the thickness of the chemical reaction layer and various dipping temperatures. The results indicate that the slurry dipping temperatures increased, the chemical reaction layer thickened; and the increase of the chemical reaction layer thickness was approximately linear.

This study uses the polishing pad with cross pattern, and it is supposed that the contact area between polishing pad surface of cross pattern and wafer is Gaussian distribution to establish and analyze an innovative abrasive removal depth theoretical model of chemical mechanical polishing (CMP) silicon wafer. In this model, it uses the binary image pixel division to calculate polishing times and it derives the contact force of each abrasive particle and uses the specific down force energy (SDFE) theoretical equation to calculate the abrasive removal depth on each abrasive particle after down force being applied. This study carries out CMP silicon wafer experiment as well as atomic force microscopy (AFM) measurement experiment of SDFE of silicon wafer. The abrasive removal depth of silicon wafer acquired from simulation analysis is compared with the abrasive removal depth of silicon wafer obtained from CMP experiment of silicon wafer, and the difference in between will also be analyzed. It shows that the difference between the results of simulation and experiment is in the acceptable range.

Innovatively establishing a combination method of judging patent attribution.Improved cosine similarity concept and patent attribution probability is combined.Term and word segmentation system is used to analyze technical/functional words.Normalized numerical value is used as the weight of improved cosine similarity.Normalized numerical value is used in the probability method. The paper studies the attribution of patents by innovatively establishing a combination of improved cosine similarity concept and patent attribution probability method for hydrolysis substrate fabrication process in order to enhance the speed and accuracy for judgment of patent attribution. For the improved cosine similarity method innovatively established in the paper, all the vocabularies of important technical words or functional words in patent documents are regarded as a number of vector dimensions. The normalized numerical values of these vocabularies are regarded as the weights of these technical words or functional words. They are substituted in a formula of improved cosine similarity. Regarding the patent attribution probability method, it applies the normalized numerical values of the various clusters of technical or functional words as well as the formula of probability method to judge which technical category or functional category that a patent is attributed to. As the study innovatively combines improved cosine similarity with patent attribution probability method, before employing patent attribution probability method for a patent document, the study firstly uses improved cosine similarity to check with the cluster of patent group words having high relativity, and rule out the unrelated technical categories or functional categories that the patent is not attributed to, so as to decrease the number of categories for calculation and the time to calculate which technical category or functional category that a patent is attributed to when using patent attribution probability method, and to achieve a method that can more rapidly and accurately judge which technical category or functional category that a patent is attributed to.

The paper proposes using atomic force microscopy (AFM) and the concept of specific down force energy (SDFE) to establish an innovative offset cycle cutting method for fabricating a bulgy shape nanochannel on a single-crystal silicon substrate. In the offset cycle cutting method, cutting is performed at a constant down force in all cutting passes. After the first cutting pass, the AFM probe is offset rightward for the second pass and subsequently offset leftward to the middle (i.e., between the positions of the first two cutting passes) for the third cutting pass. Applying a step-by-step method to modify the offset distance and approach the defined SDFE value, this study determined the depth of the middle cutting pass and smaller values of upward bulginess and downward indentation at the bottom of the nanochannel. The nanochannel width can be increased by increasing the number of offset cycle cutting passes. In addition, by applying the proposed method, this study involved a simulation and experiment concerning the cutting path plan of bulgy shape nanochannels. Furthermore, using a small down force along the burr path is proposed for reducing burr height. The results of the simulation and experiment were compared to verify the feasibility of the method.

The paper innovatively proposes using atomic force microscopy (AFM) and the concept of specific down force energy (SDFE) to establish a method for fabricating T shape nanochannel grooves on silicon (Si) substrate. Using the single-pass multi-layer cutting method of nanochannel groove using AFM proposed by the paper, a nanochannel looked like T shape is fabricated. For fabricating T shape nanochannel, it is set that cutting is firstly carried out for one pass on each cutting layer at a fixed down force. Then the probe carries out cutting for repeated passes. Using this cutting way by AFM and SDFE theory, the cutting depth and width of each pass can be predicted. The results of simulation and experiment of fabricating method for T shape nanochannel is further compared.

The paper establishes a new theoretical model for abrasive removal depth for polishing a sapphire wafer using chemical mechanical polishing with a polishing pad that has a cross pattern. The theoretical model uses binary image pixel division to calculate the pixel polishing times. An abrasive contact model for single-pixel multiple abrasive particles, to estimate the contact force between a single abrasive particle and the wafer, is then established. When the contact force is calculated, it is possible to calculate the abrasive depth of a single abrasive particle on the surface of the sapphire wafer. Using this theoretical model, carring a numerical simulation with a slurry of the same concentration, but with different abrasive particle diameters, determines the removal volume and average abrasive removal depth at each pixel position and the surface condition of the wafer. The simulation result is also compared with experimental data, in order to verify that the new model is feasible.

A quasi-steady molecular statics nanoscale cutting model is used to carry out simulation of nanoscale orthogonal cutting of single-crystal silicon by the diamond tools with different edge shapes. Based on the simulation results, this paper analyzes the cutting force, equivalent stress and strain, and temperature field. When the diamond tool moves to cut the single-crystal silicon, displacement of atoms is caused due to the effects of Morse force on each other. After a small distance that each atom moves, the concept of force balance is used to directly calculate the trajectory of each atom. Hooke–Jeeves direct search method is also used to solve the force balance equation, and obtain the new movement position of each atom. When chip formation and the cutting forces during cutting are calculated, further analysis is made. After the position of an atom’s displacement is acquired, the shape function concept of finite element is employed to obtain the atomic-level equivalent strain. The equivalent stress–strain curve of single-crystal silicon acquired from the reference is used to calculate the equivalent stress produced under the calculated equivalent strain. This paper further supposes that temperature rise during nanoscale orthogonal cutting the single-crystal silicon is mainly produced from two heat sources: plastic deformation heat and friction heat. Thus, this paper uses the acquired equivalent stress and strain to calculate plastic deformation heat. Besides, this paper additionally develops a method to calculate the numerical value of friction heat produced by the single-crystal silicon atoms on the tool face and the numerical value of temperature rise of silicon atoms around tool face. Finally, the temperature rise produced from the two heat sources is added up for calculation of temperature field of the single-crystal silicon workpiece during nanoscale orthogonal cutting, and for making analysis. A simulation temperature field result obtained by the proposed quasi-steady molecular statics nanocutting model is qualitatively verified with the temperature field obtained by molecular dynamics method in the reference.

An orthogonal cutting is a symmetric cutting thus it can be modified as a two dimensional cutting. This paper uses quasi-steady molecular statics method to carry out simulation of two dimensional nanoscale cutting copper work piece by the diamond tools. For the two dimensional quasi-steady molecular statics nanoscale cutting model used by this paper, when the cutting tool moves on a copper work piece, displacement of atoms is caused due to the effects of potential on each other. After a small distance that each atom moves is directly solved by the calculated trajectory of each atom, the concept of force balance is used. The minimum energy method is employed to carry out the search, and obtain the new movement position for each atom. Based on the simulation results, this paper studies the chip formation shape and cutting forces in x direction and y direction.

This paper proposes the innovative concept of specific down force energy (SDFE) and applies it to nanoscale multi-pass cutting using an atomic force microscopy (AFM) probe as a cutting tool. This paper defines SDFE as the down force energy dividing the volume of material removed of the workpiece by the AFM probe. Experimental data and the calculation results indicate that the SDFE values of different down forces and in different cutting passes are close to a constant value. Adopting the SDFE theory, this paper calculates objective functions through step-by-step adjustments of the increased cutting depth under some constraint conditions. These conditions require that the shape of probe is already known and is within the range of machinable down force of probe, and that the requirement of convergence error functions of SDFE and objective cutting depth are met. This paper uses the proposed method to identify the fewest cutting passes that can achieve the objective cutting depth under suitable down force action. Finally, this paper reports experiments using an AFM probe cutting tool to carry out nanoscale cutting experiments on the surface of sapphire substrate for cutting nanoscale V-shaped grooves in different cutting passes under different down force actions. This study compares the cutting depth values of different nanoscale grooves in the central area with the theoretically calculated results. A comparison of these results shows that the down force and cutting passes required to achieve the objective cutting depth using the proposed method are very close to experimental results using the same down force and cutting passes. These results verify the feasibility of the proposed method in finding the fewest cutting passes for cutting a specific depth using an AFM probe.

The present paper proposes using atomic force microscopy (AFM) and the concept of specific down force energy (SDFE) to establish a method for fabricating and cutting the burr for Y shape nanochannel on silicon (Si) substrate. For fabricating Y shape nanochannel, it first makes the experimental cutting path planning for fabricating Y shape nanochannel until the fifth cutting layer. Using the constant down force by AFM and SDFE theory and following the experimental cutting path planning, the cutting depth and width of each pass of Y shape nanochannel can be predicted by simulation. The paper plans the path for cutting the burr at the edge of Y shape nanochannel. Then, it carries out cutting the burr along the Y nanochannel edge by using a smaller down force. The height of standing burr at the edge is required to be below the set value of 0.54 nm. The results of simulation and experiment of fabricating and cutting the burr for Y shape nanochannel is further compared., {"references":["S.M. Hwang, N.S. Kim and J.H. Lee, IEEE Electron Device Letters, vol.31, 2010, pp. 698-700.","G. Binning, C.F. Quate and C. Gerber, Physical Review Letters, vol.56, 1986, pp. 930-933.","A.A. Tseng, S. Jou, A. Notargiacomo and T.P. Chen, Journal of Nanoscience and Nanotechnology, vol.8, 2008, pp. 2167–2186.","T.H. Fang, C.I. Weng and J.G. Chang, Nanotechnology, vol.11, 2000, pp. 181-187.","H.W. Schumacher, U.F. Keyser and U. Zeitler, Fabrication of a single-electron transistor, Physical. vol.6, 2000, pp. 860-863.","Y. Yan, T. Sun, Y.C. Liang and S. Dong, International Journal of Machine Tools and Manufacture, vol.47 ,2007, pp. 1651-1659.","Z.Q. Wang, N.D. Jiao, S. Tung and Z.L. Dong, Chinese Science Bulletin, vol.55, 2010, pp. 3466-3471.","J.C.T. Eijkel, W. Sparreboom, L. Shui, G.B. Salieb-Beugelaar, and A. van den Berg, Nanofluidics: fundamentals and applications, vol.978, 2009, pp. 4193-4244.","L.L. Shui, C.T. Jan Eijkel and A. van den Berg, Sensors and Actuators B, vol.121, 2007, pp. 263-276.\n[10]\tZ.C. Lin, Y.C. Hsu, Applied Surface Science, vol.258 , 2012, pp. 4513-4522."]}

The three-dimensional quasi-steady molecular statics nanocutting model developed by this paper carries out simulation analysis of nanocutting of sapphire substrate in order to explore the effects of tools with the same tip radii of probe and straight-line cutting at different cutting depths, on cutting force. The three-dimensional quasi-steady molecular statics nanocutting sapphire workpiece model first assumes the trajectory of each atom of the sapphire workpiecs being cut whenever the diamond cutter goes forward one step. It then uses the optimization search method to solve the force equilibrium equation of the Morse force in the X, Y and Z directions when each atom moves a small distance, so as to find the new movement position of each atom, and step by step calculates the behavior during cutting. And from the simulation results of cutting force, down force and side force, it is found that under the actions of cutting tools with the same tip radius of probe, cutting force enlarges with the increase of cutting depth. This result is identical to the actual experimental phenomena of nanocutting. From this, it is known that the simulation model developed in this study is reasonable.

The study mainly explores the fabrication mechanism for fabricating sapphire wafer substrate, by using chemical mechanical polishing (CMP) method. A slurry containing the abrasive particles of SiO2 is used to contact with the sapphire substrate polish and to produce chemical reaction for removal of sapphire wafer substrate when CMP method is used. The study observes the changes of the removal amount of sapphire wafer substrate when the pattern-free polishing pad and hole-pattern polishing pad are used under different down forces, polishing velocities, abrasive particle sizes and slurry concentrations. Employing regression analysis theory, the study makes improvement of the equation of material removal rate (MRR) to be the material removal height per 30 minutes (MRRh), and develops a compensation parameter Crv of the error caused by the volume concentration of slurry. The results of experimental analysis show that under a certain down force, if the polishing velocity is greater, the material removal amount will be greater. Generally speaking, the material removal amount of hole-pattern polishing pad is greater than that of pattern-free polishing pad. As to the relationship between abrasive particle size and slurry concentration, when particle size is smaller, the volume concentration of slurry will be higher, and the number of abrasives for polishing wafer will be greater. As a result, a better material removal depth can be acquired. Through the above analytical results, considerable help is offered to the polishing of sapphire wafer.

This paper studies two models for estimating cutting depth of multi-pass nanoscale cutting by using an atomic force microscopy (AFM) probe. One estimates cutting depth for multi-pass nanoscale cutting by using regression equations of nanoscale contact pressure factor (NCP factor) while the other uses equation of specific down force energy (SDFE). This paper proposes taking a diamond-coated probe of AFM as the cutting tool to carry out multi-pass nanoscale cutting experiments on the surface of sapphire substrate. In the process of experimentation, different down forces are set, and the probe shape of AFM is known, then using each down force to multi-pass cutting the sapphire substrate. From the measured experimental data of a central cutting depth of the machining groove by AFM, this paper calculates the specific down force energy of each down force. The experiment results reveal that the specific down force energy of each case of multi-pass nanoscale cutting for different down forces under a probe of AFM is close to a constant value. This paper also compares the nanoscale cutting results from estimating cutting depths for each pass of multi-pass among the experimental results and the calculating results obtained by the two theories models. It is found that the model of specific down force energy can calculate cutting depths for each nanoscale cutting pass by one equation. It is easier to use than the multi-regression equations of the nanoscale contact pressure factor. Besides, the estimations of cutting depth results obtained by the model of specific down force energy are closer to that of the experiment results. It shows that the proposed specific down force energy model in this paper is an acceptable model.

This article presents a quasi-steady molecular statics nanocutting simulation model for simulating orthogonal two dimension cutting copper materials with different point defects by using diamond cutters. The analyses of cutting action, cutting force, equivalent strain and equivalent stress are taken during nanocutting copper material with point defect. The two dimensional quasisteady molecular statics nanocutting model first assumes the trajectory of each atom of copper workpiece being cut whenever the diamond cutter goes forward one step. It then uses the Hooke- Jeeves search method to solve the force equilibrium equation of the Morse force in X and Y directions when each copper atom moves a small distance, so as to find the new movement position of each copper atom. Then, the displacement of the acquired new position of each atom combined with the concept of shape function of finite element method are employed to calculate the equivalent strain of the copper workpiece during nanocutting . By using the relationship equation of the flow stress-strain curve, the equivalent stress of the copper workpiece during cutting can also be calculated

This study uses an overall knowledge framework concept to carry out engineering knowledge framework categorization for a door-shaped structure. Based on the engineering knowledge and important parameters, combined with agent technology, this study establishes the transverse beam engineering knowledge coding and a case-based similarity method for door-shaped structures. According to the coding model, we establish an associated case-based knowledgebase to carry out data search and inference application so as to shorten the working time. This study only considers the analytic problems of the natural frequency and stress of transverse beams. Looking at these problems, this study establishes different kinds of boundary conditions and load range in sequential order, as well as the related detail parameter coding. Finally, taking a case study which includes the general direct calculation through programs and the detailed dimension trans-coding as an example, this study establishes an automatic mesh model for finite element analysis to solve the analytical problems of vibration and stress. Through the weighting factor, similarity analysis is conducted to search for the similar cases. Furthermore, taking the most similar case located as the foundation, and matching it with regression analysis, this study carries out revised calculation and comparative investigation to rapidly acquire the analytic results. Thus, the proposed method can also shorten the time required for knowledge searching and design analysis by similar structures.

During chemical-mechanical polishing (CMP), the polishing pad is placed under a wafer and it completely covers the wafer. Compensating CMP (CCMP) decreases the polishing pad wear and enhances end-point detection (EDP). In CCMP, a polishing pad is placed above the wafer and does not completely cover the wafer. Regardless of CMP or CCMP, there are grooved patterns on the polishing pads. However, on the difference in polishing situations as affected by the polishing pads with different grooved patterns during polishing of wafer, theoretically there was no past reference with related studies. This study analyzes the effects of various pattern designs–concentric circles, grids, spirals and waves–on polishing pads. A numerical analytical model constructed in this study is utilized to analyze and compare the distribution of polishing times, also the polishing pads with different patterns during CMP or CCMP analytic results can function as a qualitative reference for the planarization of processing and a reference for selecting an appropriate pattern design for polishing pads. The analytic method adopts CAD-designed patterns and shapes, which are converted into a binary matrix by image processing. The various profiles and patterns of polishing pads, as well as different polishing paths, are also considered. Problems such as deformation caused by turning the pattern, ineffective polishing and the transformation of shape pixels to a physical length are corrected.

This study proposes to construct a nano-scale simulative measuring model of Tapping Mode Atomic Force Microscopy (TM-AFM), compare with the edge effect of simulative and measurement results. It combines with the Morse potential and vibration theory to calculate the tip-sample atomic interaction force between probe and sample. Used Silicon atoms (Si) arrange the shape of the rectangular cantilever probe and the nano-scale ladder-shape standard sample atomic model. The simulative measurements are compared with the results for the simulative measurements and experimental measurement. It is found that the scan rate and the probe tip's bevel angle are the two reasons to cause the surface error and edge effect of measuring the nano-scale ladder-shape standard sample by TM-AFM. And the bevel angle is about equal to the probe tip's bevel angle from the results of simulated and experimented on the vertical section of the sample edge. To compare with the edge effect between the simulation and experimental measurement, its error is small. It could be verified that the constructed simulative measuring model for TM-AFM in this article is reasonable.

This study establishes a set of theoretical line segment fabrication models of near-field photolithography using radiation field theory—Dill's exposure model and Mack's development model. By combining the theoretical line segment fabrication model and experiments, this work constructs a novel theory of inverse calculation of fiber probe aperture size using the non-destructive method. The experimental and simulation results obtained using the theoretical line segment fabrication model are compared; the error between these results is utilized as an objective function. The Levenberg–Marquardt method is used to search and rationalize the convergence criterion. Fiber probe aperture size that fits the experimental and theoretical model is inverse calculated. According to the results, the probe aperture obtained by this inverse model is d=250.6 nm, while the average size certified by SEM is davg=253.4 nm, the close match indicated that the probe aperture calculated with the inverse model is reasonable and can be accepted. The lithographic fabrication profile can be predicted with the inverse model to get the probe aperture and, then, cooperated with the theoretical simulated values and experimental parameter control. Such a fabrication has an application value for industry. This non-destructive fiber probe aperture measured model can overcome the bottleneck at present to get this value by destructive measurement, thus, it has surmounted contribution in fiber probe aperture measuring techniques. SCANNING 31: 211–220, 2009. © 2010 Wiley Periodicals, Inc.

This study investigates the performance of the ZrN tools coated by the pulsed-DC reactive magnetron sputtering on milling memory modules of PCB (printed circuit board). A speed-adjustable rotation system was designed to find out the optimal process parameters through grey relational analysis and Taguchi method, such as the sputtering distance, flow rate of nitrogen and rotational speed of tool. From the sputtering experiment, the two parameters having greatest effects are the ratio of argon to nitrogen as well as the rotational speed of tool. Within the range of the experimental equipments, the optimal ratio of argon to nitrogen flow rate is 10:4 (sccm), and the optimal rotational speed of tool is around 8 rpm. The average micro-hardness of the surface of the ZrN-coated tools are increased from 15 GPa to 21 GPa compared with uncoated tools by nano-indentator measurement. From the cutting experiments, the cutting tool life of an uncoated tungsten carbide tool is around 38 m, and that of a ZrN-coated tool is around 115 m. And the statistical process capability index (Cpk) of the coated tool also rises from 0.788 to 1.858. It is observed that a ZrN-coated tool not only can extend its used life, but also can improve the cutting quality.

This paper uses a method that combines molecular dynamics with finite element deformation model (MDFM) to calculate the stress and strain of single crystal copper that occur during nano-scale orthogonal cutting. Using the MDFM model, the phenomenon of residual strain, residual stress on the machined surface and the cutting force by the four different cutting speeds such as 20, 50, 100 and 200 m/s were investigated during nano-scale orthogonal cutting. The average cutting force is about the same under different cutting speeds ranging from 20 to 200 m/s during steady cutting state. This paper also finds that it has only minor influence for the different cutting speeds on the distribution of the strain and stress at the contact area between the cutting chip and rigid tool during steady cutting state. And the cutting speed has greater influence on the distribution of strain and stress in the shear zone. The distribution of strain and stress in shear zone increases when the cutting speed decreases. Under different cutting speeds, the values and distribution ranges of the residual strain and residual stress on the machined surface of single crystal copper are similar.

Small outline dual in-line memory modules (SO-DIMM) are the memory modules used in notebook computers. This study investigates the SO-DIMM accuracy and tool life using an uncoated and TiAlCN-coated tungsten carbide tool in the depanel process. During the cutting process, the tool operating time of a TiAlCN-coated tool can be extended and the surface quality of SO-DIMM at the cutting edge is better than uncoated tools based on EDS (energy dispersive spectrometer) observation. In the milling process, tool wear is a serious problem for new tools and to solve the problem of dimension variation, this study proposes the use of grey prediction tool compensation to offset the variation and enhance the quality of SO-DIMM. According to the process capability indices within the experimental scope, the quality of memory modules using uncoated and TiAlCN-coated tools using grey prediction tool compensation were shown to improve both its Ca and Cpk values. Thus, the grey prediction tool compensation method has really proven to be workable and can improve the quality of SO-DIMM.