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Your search keyword '"Zilkie, A. J."' showing total 26 results
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26 results on '"Zilkie, A. J."'

4. Carrier dynamics of quantum-dot, quantum-dash, and quantum-well semiconductor optical amplifiers operating at 1.55 [mu]m

Author

Zilkie, Aaron J., Meier, Joachim, Mojahedi, Mo, Poole, Philip J., Barrios, Pedro, Poitras, Daniel, Rotter, Thomas J., Chi Yang, Stintz, Andreas, Malloy, Kevin J., Smith, Peter W.E., and Aitchison, J. Stewart

Subjects
Quantum electronics -- Research, Quantum wells -- Analysis, Semiconductor device, Business, Computers, Electronics, Electronics and electrical industries
Abstract

The influence of the degree of quantum confinement on the carrier dynamics and high-speed performance of semiconductor optical amplifiers (SOAs) is evaluated by comparing the amplitude and phase recovery dynamics in three SOAs with different dimensionalities. Findings reveal that shorter gain recovery time results in lower dimensionality in the active region.

Published
2007

6. Multi-Micron Silicon Photonics Platform for Highly Manufacturable and Versatile Photonic Integrated Circuits

Author

Zilkie, Aaron J., primary, Srinivasan, Pradeep, additional, Trita, Andrea, additional, Schrans, Thomas, additional, Yu, Guomin, additional, Byrd, Jerry, additional, Nelson, David A., additional, Muth, Karl, additional, Lerose, Damiana, additional, Alalusi, Mazin, additional, Masuda, Kevin, additional, Ziebell, Melissa, additional, Abediasl, Hooman, additional, Drake, John, additional, Miller, Gerald, additional, Nykanen, Henri, additional, Kho, Evie, additional, Liu, Yangyang, additional, Liang, Hong, additional, Yang, Hua, additional, Peters, Frank H., additional, Nagra, Amit S., additional, and Rickman, Andrew G., additional

Published
2019
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7. Ultrafast gain and index dynamics in an InAs/InGaAsP quantum dot amplifier operating at 1.55 μm

Author

Zilkie, A. J., Meier, J., Smith, P. W. E., Mojahedi, M., Aitchison, J. S., Poole, P. J., Ni, C., Barrios, Allen P., and Poitras, D.

Abstract

The gain and index dynamics of a QD amplifier operating at 1.55 mum are characterized via heterodyne pump-probe measurements with 150 fs resolution. A 13 ps gain recovery time was found, promising for all-optical signal processing., 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, May 21-26, 2006, Long Beach, CA, USA

Published
2006

8. Raman gain from waveguides inscribed in KGd(WO₄)₂ by high repetition rate femtosecond laser

Author

Eaton, S. M., Merchant, C. A., Iyer, R., Zilkie, A. J., Helmy, A. S., Aitchison, J. S., Herman, P. R., Kraemer, D., Miller, R. J. D., Hnatovsky, C., Taylor, R. S., Eaton, S. M., Merchant, C. A., Iyer, R., Zilkie, A. J., Helmy, A. S., Aitchison, J. S., Herman, P. R., Kraemer, D., Miller, R. J. D., Hnatovsky, C., and Taylor, R. S.

Abstract

We report the formation of waveguides in Raman-active KGd(WO₄)₂ with a focused, high repetition rate femtosecond laser. Parallel guiding regions, formed to either side of the laser-induced damage track, supported TE and TM modes that coupled efficiently to optical fiber at telecom wavelengths. Micro-Raman spectroscopy of the guiding regions revealed the preservation of the characteristic 768 and 901cm¯¹ Raman mode intensities. Raman gain with 6% efficiency was demonstrated for the 768cm¯¹ Raman line by pumping the waveguide with an infrared 80ps source, the first time Raman gain has been reported in laser formed waveguides.

Published
2008

9. Power-efficient III-V/Silicon external cavity DBR lasers

Author

Zilkie, A. J., primary, Seddighian, P., additional, Bijlani, B. J., additional, Qian, W., additional, Lee, D. C., additional, Fathololoumi, S., additional, Fong, J., additional, Shafiiha, R., additional, Feng, D., additional, Luff, B. J., additional, Zheng, X., additional, Cunningham, J. E., additional, Krishnamoorthy, A. V., additional, and Asghari, M., additional

Published
2012
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14. Time-Resolved Linewidth Enhancement Factors in Quantum Dot and Higher-Dimensional Semiconductor Amplifiers Operating at 1.55 $\mu{\hbox{m}}$

Author

Zilkie, Aaron J., primary, Meier, Joachim, additional, Mojahedi, Mo, additional, Helmy, Amr S., additional, Poole, Philip J., additional, Barrios, Pedro, additional, Poitras, Daniel, additional, Rotter, Thomas J., additional, Yang, Chi, additional, Stintz, Andreas, additional, Malloy, Kevin J., additional, Smith, Peter W. E., additional, and Aitchison, J. Stewart, additional

Published
2008
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17. Carrier Dynamics of Quantum-Dot, Quantum-Dash, and Quantum-Well Semiconductor Optical Amplifiers Operating at 1.55 $\mu{\hbox {m}}$

Author

Zilkie, Aaron J., primary, Meier, Joachim, additional, Mojahedi, Mo, additional, Poole, Philip J., additional, Barrios, Pedro, additional, Poitras, Daniel, additional, Rotter, Thomas J., additional, Yang, Chi, additional, Stintz, Andreas, additional, Malloy, Kevin J., additional, Smith, Peter W. E., additional, and Aitchison, J. Stewart, additional

Published
2007
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25. Carrier Dynamics of Quantum-Dot, Quantum-Dash, and Quantum-Well Semiconductor Optical Amplifiers Operating at 1.55 μm.

Author

Zilkie, Aaron J., Meier, Joachim, Mojahedi, Mo, Poole, Philip J., Barrios, Pedro, Poitras, Daniel, Rotter, Thomas J., Chi Yang, Stintz, Andreas, Malloy, Kevin J., Smith, Peter W. E., and Aitchison, J. Stewart

Subjects
*PHYSICS research, *METAPHYSICS, *QUANTUM electronics, *OPTICAL amplifiers, *OPTOELECTRONIC devices, *SEMICONDUCTORS, *QUANTUM dots, *QUANTUM wells, *WAVELENGTHS
Abstract

We assess the influence of the degree of quantum confinement on the carrier recovery times in semiconductor optical amplifiers (SOAs) through an experimental comparative study of three amplifiers, one InAs-InGaAsP-InP quantum dot (O-D), one InAs-InAlGaAs-InP quantum dash (1-D), and one InGaAsP-In- GaAsP-InP quantum well (2-D), all of which operate near 1.55-μm wavelengths. The short-lived (around 1 ps) and long-lived (up to 2 ns) amplitude and phase dynamics of the three devices are characterized via heterodyne pump-probe measurements. The quantum-dot device is found to have the shortest long-lived gain recovery (~80 ps) as well as gain and phase changes indicative of a smaller linewidth enhancement factor, making it the most promising for high-bit-rate applications. The quantum-dot amplifier is also found to have reduced ultrafast transients, due to a lower carrier density in the dots. The quantum-dot gain saturation characteristics and temporal dynamics also provide insight into the nature of the dot energy-level occupancy and the interactions of the dot states with the wetting layer. [ABSTRACT FROM AUTHOR]

Published
2007
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26. Raman gain from waveguides inscribed in KGd(WO4)2 by high repetition rate femtosecond laser.

Author

Eaton, S. M., Merchant, C. A., Iyer, R., Zilkie, A. J., Helmy, A. S., Aitchison, J. S., Herman, P. R., Kraemer, D., Miller, R. J. D., Hnatovsky, C., and Taylor, R. S.

Subjects
RAMAN effect, LASERS, RAMAN spectroscopy, WAVEGUIDES, PHYSICS
Abstract

We report the formation of waveguides in Raman-active KGd(WO4)2 with a focused, high repetition rate femtosecond laser. Parallel guiding regions, formed to either side of the laser-induced damage track, supported TE and TM modes that coupled efficiently to optical fiber at telecom wavelengths. Micro-Raman spectroscopy of the guiding regions revealed the preservation of the characteristic 768 and 901 cm-1 Raman mode intensities. Raman gain with 6% efficiency was demonstrated for the 768 cm-1 Raman line by pumping the waveguide with an infrared 80 ps source, the first time Raman gain has been reported in laser formed waveguides. [ABSTRACT FROM AUTHOR]

Published
2008
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