662 results on '"Zhuravlev, K. S."'
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2. Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1)
3. Homogeneous Array of Nanopits on the Surface of InAlAs Layers Grown by Molecular Beam Epitaxy on an InP (001) Substrate
4. Surface Passivation of IR Photodetectors Based on InSb/In\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{\boldsymbol{1-x}}\mathbf{Al}_{\boldsymbol{x}}$$\end{document}Sb Heterostructures
5. The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors
6. GaAs/AlGaAs- and InGaAs/AlGaAs-Heterostructures for High-Power Semiconductor Infrared Emitters
7. Recombination Kinetics of Excitons and Trions in Free-Standing CdS Quantum Dots Synthesized by the Langmuir–Blodgett Method
8. Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers
9. GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow
10. Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux
11. Mechanisms of the Oxides Removal from the InP Surface under Annealing in an Arsenic Flux
12. Photoluminescence of Multiple GaN/AlN Quantum Wells
13. High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures
14. Features of Optical Gain in Heavily Doped AlxGa1 –xN:Si-Structures
15. A Millimeter-Wave Field-Effect Transistor Based on a Pseudomorphic Heterostructure with an Additional Potential Barrier
16. AlSb/InAs Heterostructures for Microwave Transistors
17. Growth of Nitride Heteroepitaxial Transistor Structures: from Epitaxy of Buffer Layers to Surface Passivation
18. New Type of Heterostructures for Powerful pHEMT Transistors
19. AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy
20. Influence of the heterointerface sharpness on exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap
21. Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1).
22. Surface Passivation of IR Photodetectors Based on InSb/InSb Heterostructures.
23. Pauli blockade of the electron spin flip in bulk GaAs
24. Interplay of the exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs
25. Influence of Trapping on the Exciton Dynamics of Al_xGa_1-xAs Films
26. Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface
27. On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique
28. Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures
29. Growth of AlGaN:Si Heterostructures with Bragg Reflectors for the Blue-Green Spectral Range
30. Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors
31. Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films
32. The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes
33. Kinetics of exciton photoluminescence in type-II semiconductor superlattices
34. The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors.
35. High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines
36. Formation of a Graphene-Like SiN Layer on the Surface Si(111)
37. Determination of Electron Temperature in DA-pHEMT Heterostructures by Shubnikov – de Haas Oscillation Method
38. Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE
39. Broadband Spontaneous and Stimulated Luminescence of Heavily Doped AlxGa1 – xN Structures
40. Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers
41. Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
42. Local phonon imaging of AlN nanostructures with nanoscale spatial resolution
43. Nature of luminescence of PbS quantum dots synthesized in a Langmuir–Blodgett matrix
44. MBE-grown InSb photodetector arrays
45. Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method
46. Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate
47. AlN/GaN heterostructures for normally-off transistors
48. Radiation enhancement in doped AlGaN-structures upon optical pumping
49. Self-assembled Quantum Dots: From Stranski–Krastanov to Droplet Epitaxy
50. Field Effect Transistor Constructed of Novel Structure With Short-Period (GaAs)n/(AlAs)m Superlattice
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