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Among expanding discoveries of quantum phases in moir\'e superlattices, correlated insulators stand out as both the most stable and most commonly observed. Despite the central importance of these states in moir\'e physics, little is known about their underlying nature. Here, we use pump-probe spectroscopy to show distinct time-domain signatures of correlated insulators at fillings of one (v = -1) and two (v = -2) holes per moir\'e unit cell in the angle-aligned WSe2/WS2 system. Following photo-doping, we find that the disordering time of the v = -1 state is independent of excitation density (n_ex), as expected from the characteristic phonon response time associated with a polaronic state. In contrast, the disordering time of the v = -2 state scales with (n_ex)^-0.5, in agreement with plasmonic screening from free holons and doublons. These states display disparate reordering behavior dominated either by first order (v = -1) or second order (v = -2) recombination, suggesting the presence of Hubbard excitons and free carrier-like holons/doublons, respectively. Our work delineates the roles of electron-phonon (e-ph) versus electron-electron (e-e) interactions in correlated insulators on the moir\'e landscape and establishes non-equilibrium responses as mechanistic signatures for distinguishing and discovering quantum phases., Comment: 18 pages, 4 figures, +10 Supporting figures. arXiv admin note: text overlap with arXiv:2307.16563

Two-dimensional moir\'e materials have emerged as the most versatile platforms for realizing quantum phases of electrons. Here, we explore the stability origins of correlated states in WSe2/WS2 moir\'e superlattices. We find that ultrafast electronic excitation leads to melting of the Mott states on time scales five times longer than predictions from the charge hopping integrals and the melting rates are thermally activated, with activation energies of 18 and 13 meV for the one- and two-hole Mott states, respectively, suggesting significant electron-phonon coupling. DFT calculation of the one-hole Mott state confirms polaron formation and yields a hole-polaron binding energy of 16 meV. These findings reveal a close interplay of electron-electron and electron-phonon interactions in stabilizing the polaronic Mott insulators at transition metal dichalcogenide moir\'e interfaces., Comment: 14 pages, 4 figures, 11 SI figures

Since the seminal work on MoS2 monolayers, photoexcitation in atomically-thin transition metal dichalcogenides (TMDCs) has been assumed to result in excitons with large binding energies (~ 200-600 meV). Because the exciton binding energies are order-of-magnitude larger than thermal energy at room temperature, it is puzzling that photocurrent and photovoltage generation have been observed in TMDC-based devices, even in monolayers with applied electric fields far below the threshold for exciton dissociation. Here, we show that the photoexcitation of TMDC monolayers results in a substantial population of free charges. Performing ultrafast terahertz (THz) spectroscopy on large-area, single crystal WS2, WSe2, and MoSe2 monolayers, we find that ~10% of excitons spontaneously dissociate into charge carriers with lifetimes exceeding 0.2 ns. Scanning tunnelling microscopy reveals that photo-carrier generation is intimately related to mid-gap defect states, likely via trap-mediated Auger scattering. Only in state-of-the-art quality monolayers14, with mid-gap trap densities as low as 10^9 cm^-2, does intrinsic exciton physics start to dominate the THz response. Our findings reveal that excitons or excitonic complexes are only the predominant quasiparticles in photo-excited TMDC monolayers at the limit of sufficiently low defect densities., Comment: 18 pages, 5 figures, SI

We report a study of the noncentrosymmetric TaReSi superconductor by means of muon-spin rotation and relaxation ($\mu$SR) technique, complemented by electronic band-structure calculations. Its superconductivity, with $T_c$ = 5.5 K and upper critical field $\mu_0H_\mathrm{c2}(0)$ $\sim$ 3.4 T, was characterized via electrical-resistivity- and magnetic-susceptibility measurements. The temperature-dependent superfluid density, obtained from transverse-field $\mu$SR, suggests a fully-gapped superconducting state in TaReSi, with an energy gap $\Delta_0$ = 0.79 meV and a magnetic penetration depth $\lambda_0$ = 562 nm. The absence of a spontaneous magnetization below $T_c$, as confirmed by zero-field $\mu$SR, indicates a preserved time-reversal symmetry in the superconducting state. The density of states near the Fermi level is dominated by the Ta- and Re-5$d$ orbitals, which account for the relatively large band splitting due to the antisymmetric spin-orbit coupling. In its normal state, TaReSi behaves as a three-dimensional Kramers nodal-line semimetal, characterized by an hourglass-shaped dispersion protected by glide reflection. By combining non\-triv\-i\-al electronic bands with intrinsic superconductivity, TaReSi is a promising material for investigating the topological aspects of noncentrosymmetric superconductors., Comment: 9 pages, 9 figures; accepted by Phys. Rev. B

We report a study of NiBi$_3$ single crystals by means of electrical-resistivity-, magnetization-, and muon-spin rotation and relaxation ($\mu$SR) measurements. As a single crystal, NiBi$_3$ adopts a needle-like shape and exhibits bulk superconductivity with $T_c \approx 4.1$ K. By applying magnetic fields parallel and perpendicular to the $b$-axis of NiBi$_3$, we establish that its lower- and upper critical fields, as well as the magnetic penetration depths show slightly different values, suggesting a weakly anisotropic superconductivity. In both cases, the zero-temperature upper critical fields are much smaller than the Pauli-limit value, indicating that the superconducting state is constrained by the orbital pair breaking. The temperature evolution of the superfluid density, obtained from transverse-field $\mu$SR, reveals a fully-gapped superconductivity in NiBi$_3$, with a shared superconducting gap $\Delta_0$ = 2.1 $k_\mathrm{B}$$T_c$ and magnetic penetration depths $\lambda_0$ = 223 and 210 nm for $H \parallel b$- and $H \perp b$, respectively. The lack of spontaneous fields below $T_c$ indicates that time-reversal symmetry is preserved in NiBi$_3$. The absence of a fast muon-spin relaxation and/or precession in the zero-field $\mu$SR spectra definitely rules out any type of magnetic ordering in NiBi$_3$ single crystals. Overall, our investigation suggests that NiBi$_3$ behaves as a conventional $s$-type superconductor., Comment: 8 pages, 8 figures, accepted by Phys. Rev. B

The CuIr$_{2-x}$Ru$_x$Te$_4$ superconductors (with a $T_c$ around 2.8 K) can host charge-density waves, whose onset and interplay with superconductivity are not well known at a microscopic level. Here, we report a comprehensive study of the $x$ = 0 and 0.05 cases, whose superconductivity was characterized via electrical-resistivity-, magnetization-, and heat-capacity measurements, while their microscopic superconducting properties were studied via muon-spin rotation and relaxation ($\mu$SR). In CuIr$_{2-x}$Ru$_x$Te$_4$, both the temperature-dependent electronic specific heat and the superfluid density (determined via transverse-field $\mu$SR) are best described by a two-gap (s+d)-wave model, comprising a nodeless gap and a gap with nodes. The multigap superconductivity is also supported by the temperature dependence of the upper critical field $H_\mathrm{c2}(T)$. However, under applied pressure, a charge-density-wave order starts to develop and, as a consequence, the superconductivity of CuIr$_2$Te$_4$ achieves a more conventional s-wave character. From a series of experiments, we provide ample evidence that the CuIr$_{2-x}$Ru$_x$Te$_4$ family belongs to the rare cases, where an unconventional superconducting pairing is found near a charge-density-wave quantum critical point., Comment: 10 pages, 12 figures

Two-dimensional (2D) transition metal dichalcogenides (TMDC) and their moir\'e interfaces have been demonstrated for correlated electron states, including Mott insulators and electron/hole crystals commensurate with moir\'e superlattices. Here we present spectroscopic evidences for ordered bosons - interlayer exciton crystals in a WSe2/MoSe2/WSe2 trilayer, where the enhanced Coulomb interactions over those in heterobilayers have been predicted to result in exciton ordering. While the dipolar interlayer excitons in the heterobilayer may be ordered by the periodic moir\'e traps, their mutual repulsion results in de-trapping at exciton density n_ex larger than 10^11 cm^-2 to form mobile exciton gases and further to electron-hole plasmas, both accompanied by broadening in photoluminescence (PL) peaks and large increases in mobility. In contrast, ordered interlayer excitons in the trilayer are characterized by negligible mobility and by sharper PL peaks persisting to n_ex approximately 10^12 cm^-2. We present evidences for the predicted quadrupolar exciton crystal and its transitions to dipolar excitons either with increasing n_ex or by an applied electric field. These ordered interlayer excitons may serve as models for the exploration of quantum phase transitions and quantum coherent phenomena., Comment: 19 pages, 4 figures, SI

We report a comprehensive study of the Zr$_5$Pt$_3$C$_x$ superconductors, with interstitial carbon comprised between 0 and 0.3. At a macroscopic level, their superconductivity, with $T_c$ ranging from 4.5 to 6.3 K, was investigated via electrical-resistivity-, magnetic-susceptibility-, and specific-heat measurements. The upper critical fields $\mu_0H_\mathrm{c2}$ $\sim$ 7 T were determined mostly from measurements of the electrical resistivity in applied magnetic fields. The microscopic electronic properties were investigated by means of muon-spin rotation and relaxation ($\mu$SR) and nuclear magnetic resonance (NMR) techniques. In the normal state, NMR relaxation data indicate an almost ideal metallic behavior, confirmed by band-structure calculations, which suggest a relatively high electronic density of states at the Fermi level, dominated by the Zr 4$d$ orbitals. The low-temperature superfluid density, obtained via transverse-field $\mu$SR, suggests a fully-gapped superconducting state in Zr$_5$Pt$_3$ and Zr$_5$Pt$_3$C$_{0.3}$, with a zero-temperature gap $\Delta_0$ = 1.20 and 0.60 meV and a magnetic penetration depth $\lambda_0$ = 333 and 493 nm, respectively. The exponential dependence of the NMR relaxation rates below $T_c$ further supports a nodeless superconductivity. The absence of spontaneous magnetic fields below the onset of superconductivity, as determined from zero-field $\mu$SR measurements, confirms a preserved time-reversal symmetry in the superconducting state of Zr$_5$Pt$_3$C$_x$. In contrast to a previous study, our $\mu$SR and NMR results suggest a conventional superconductivity in the Zr$_5$Pt$_3$C$_x$ family, independent of the C content., Comment: 9 pages, 11 figures, accepted by Phys. Rev. B

Many crystalline solids possess strongly anharmonic soft phonon modes characterized by diminishing frequency as temperature approaches a critical point associated with a symmetry breaking phase transition. While electron-soft phonon coupling can introduce unique scattering channels for charge carriers in ferroelectrics, recent studies on the non-ferroelectric lead halide perovskites have also suggested the central role of anharmonic phonons bearing resemblance to soft modes in charge carrier screening. Here we apply coherent phonon spectroscopy to directly study electron coupling to the soft transverse optical (TO) phonon mode in a ferroelectric semiconductor SbSI. Photo-generated charge carriers in SbSI are found to be exceptionally long lived and are associated with a transient electro-optical effect that can be explained by interactions between charge carriers and thermally stimulated soft-phonon excitations. These results provide strong evidence for the role of electron-soft phonon coupling in the efficient screening of charge carriers and in reducing charge recombination rates, both desirable properties for optoelectronics., Comment: 15 pages, 4 figures, 6 pages SI

A search for the hadronic decays of the $h_{c}$ meson to the final states $p\bar{p}\pi^{+}\pi^{-}\pi^{0}$, $p\bar{p}\eta$, and $p\bar{p}\pi^0$ via the process $\psi(3686) \to \pi^{0}{h_c}$ is performed using $(4.48\pm0.03)\times10^{8}$ $\psi(3686)$ events collected with the BESIII detector. The decay channel $h_{c}\to p\bar{p}\eta$ is observed for the first time with a significance greater than $5\sigma$ and a branching fraction of $\left( {6.41 \pm 1.74 \pm 0.53 \pm 1.00} \right) \times {10^{ -4}}$, where the uncertainties are statistical, systematic, and that from the branching fraction of $\psi(3686)\to\pi^{0}h_{c}$. Strong evidence for the decay ${h_c} \to p\bar{p}{\pi^+}{\pi^-}{\pi^0}$ is found with a significance of $4.9\sigma$ and a branching fraction of $\left( {3.84 \pm 0.83 \pm0.69} \pm 0.58 \right) \times {10^{ - 3}}$. The significances include systematic uncertainties. No clear signal of the decay $h_c\to p\bar{p}\pi^{0}$ is found, and an upper limit of $6.59\times 10^{-4}$ on its branching fraction is set at the 90% confidence level.

Using $e^{+}e^{-}$ annihilation data corresponding to a total integrated luminosity of $6.32$ fb$^{-1}$ collected at the center-of-mass energies between 4.178 and 4.226 GeV with the BESIII detector, we perform an amplitude analysis of the decay $D^+_s \to K^-K^+\pi^+\pi^+\pi^-$ and determine the relative fractions and phases of different intermediate processes. Absolute branching fraction of $D^+_s\to K^-K^+\pi^+\pi^+\pi^-$ decay is measured to be ($6.60\pm0.47_{\rm stat.}\pm0.35_{\rm syst.})\times 10^{-3}$. The dominant intermediate process is $D_{s}^{+} \to a_1(1260)^+\phi, \phi\to K^-K^+, a_1(1260)^+\to \rho\pi^+, \rho\to\pi^+\pi^-$, with a branching fraction of $(5.16\pm0.41_{\rm stat.}\pm0.27_{\rm syst.})\times 10^{-3}$.

We report on systematic muon-spin rotation and relaxation ($\mu$SR) studies of the magnetic properties of EuAl$_4$ and EuGa$_4$ single crystals at a microscopic level. Transverse-field $\mu$SR measurements, spanning a wide temperature range (from 1.5 to 50 K), show clear bulk AFM transitions, with an almost 100% magnetic volume fraction in both cases. Zero-field $\mu$SR measurements, covering both the AFM and the paramagnetic (PM) states, reveal internal magnetic fields $B_\mathrm{int}(0) = 0.33$ T and 0.89 T in EuAl$_4$ and EuGa$_4$, respectively. The transverse muon-spin relaxation rate $\lambda_\mathrm{T}$, a measure of the internal field distribution at the muon-stopping site, shows a contrasting behavior. In EuGa$_4$, it decreases with lowering the temperature, reaching its minimum at zero temperature, $\lambda_\mathrm{T}(0) = 0.71$ $\mu$s$^{-1}$. In EuAl$_4$, it increases significantly below $T_\mathrm{N}$, to reach 58 $\mu$s$^{-1}$ at 1.5 K, most likely reflecting the complex magnetic structure and the competing interactions in the AFM state of EuAl$_4$. In both compounds, the temperature-dependent longitudinal muon-spin relaxation $\lambda_\mathrm{L}(T)$, an indication of the rate of spin fluctuations, diverges near the onset of AFM order, followed by a significant drop at $T < T_\mathrm{N}$. In the AFM state, spin fluctuations are much stronger in EuAl$_4$ than in EuGa$_4$, while being comparable in the PM state. The evidence of robust spin fluctuations against the external magnetic fields provided by $\mu$SR may offer new insights into the origin of the topological Hall effect and the possible magnetic skyrmions in the EuAl$_4$ and EuGa$_4$ compounds., Comment: 10 pages, 7 figures, accepted by Phys. Rev. B

We report on systematic temperature- and magnetic field-dependent studies of the EuGa$_4$ binary compound, which crystallizes in a centrosymmetric tetragonal BaAl$_4$-type structure with space group $I4/mmm$. The electronic properties of EuGa$_4$ single crystals, with an antiferromagnetic (AFM) transition at $T_\mathrm{N} \sim 16.4$ K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching $\sim 7 \times 10^4$ % at 2 K in a magnetic field of 9 T. In the AFM state, EuGa$_4$ undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. Below $T_\mathrm{N}$, in the $\sim$4-7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl$_4$-type structure, to which EuGa$_4$ and EuAl$_4$ belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands., Comment: 15 pages, 6 figures; to be appeared on JPCM

Spin-orbit coupling (SOC) is responsible for a range of spintronic and topological processes in condensed matter. Here we show photonic analogs of SOCs in exciton-polaritons and their condensates in microcavities composed of birefringent lead halide perovskite single crystals. The presence of crystalline anisotropy coupled with splitting in the optical cavity of the transverse electric (TE) and transverse magnetic (TM) modes gives rise to a non-Abelian gauge field, which can be described by the Rashba-Dresselhaus Hamiltonian near the degenerate points of the two polarization modes. With increasing density, the exciton polaritons with pseudospin textures undergo phase transitions to competing condensates with orthogonal polarizations. Unlike their pure photonic counterparts, these exciton polaritons and condensates inherit nonlinearity from their excitonic components and may serve as quantum simulators of many-body SOC processes., Comment: 17 pages, 4 figures, 29 pages Supporting Information

Utilizing a data set corresponding to an integrated luminosity of 6.32~$\rm fb^{-1}$, recorded by the BESIII detector at center-of-mass energies between 4.178 and 4.226~GeV, we perform an amplitude analysis of the decay $D_{s}^{+} \to K_{S}^{0}\pi^{+}\pi^{0}$ and determine the relative fractions and phase differences of different intermediate processes, which include $K_{S}^{0}\rho(770)^{+}$, $K_{S}^{0}\rho(1450)^{+}$, $K^{*}(892)^{0}\pi^{+}$, $K^{*}(892)^{+}\pi^{0}$, and $K^{*}(1410)^{0}\pi^{+}$. Using a double-tag technique, and making an efficiency correction that relies on our knowledge of the phase-space distribution of the decays coming from the amplitude analysis, the absolute branching fraction is measured to be $\mathcal{B}(D_{s}^{+} \to K_{S}^{0}\pi^{+}\pi^{0})=(5.43\pm0.30_{\text{stat}}\pm 0.15_{\text{syst}})\times 10^{-3}$.

The ultrafast polarization response to incident light and ensuing exciton/carrier generation are essential to outstanding optoelectronic properties of lead halide perovskites (LHPs). A large number of mechanistic studies in the LHP field to date have focused on contributions to polarizability from organic cations and the highly polarizable inorganic lattice. For a comprehensive understanding of the ultrafast polarization response, we must additionally account for the nearly instantaneous hyperpolarizability response to the propagating light field itself. While light propagation is pivotal to optoelectronics and photonics, little is known about this in LHPs in the vicinity of the bandgap where stimulated emission, polariton condensation, superfluorescence, and photon recycling may take place. Here we develop two-dimensional optical Kerr effect (2D-OKE) spectroscopy to energetically dissect broadband light propagation and dispersive nonlinear polarization responses in LHPs. In contrast to earlier interpretations, the below-bandgap OKE responses in both hybrid CH3NH3PbBr3 and all-inorganic CsPbBr3 perovskites are found to originate from strong hyperpolarizability and highly anisotropic dispersions. In both materials, the nonlinear mixing of anisotropically propagating light fields result in convoluted oscillatory polarization dynamics. Based on a four-wave mixing model, we quantitatively derive dispersion anisotropies, reproduce 2D-OKE frequency correlations, and establish polarization dressed light propagation in single crystal LHPs. Moreover, our findings highlight the importance of distinguishing the often-neglected anisotropic light propagation from underlying coherent quasi-particle responses in various forms of ultrafast spectroscopy., Comment: 22 pages, 5 figures, 32 pages SI

Charge separated interlayer excitons in transition metal dichalcogenide (TMDC) heterobilayers are being explored for moir\'e exciton lattices and exciton condensates. The presence of permanent dipole moments and the poorly screened Coulomb interaction make many body interactions particularly strong for interlayer excitons. Here we reveal two distinct phase transitions for interlayer excitons in the MoSe2/WSe2 heterobilayer using time and spatially resolved photoluminescence imaging: from trapped excitons in the moir\'e-potential to the modestly mobile exciton gas as exciton density increases to ne/h ~ 1011 cm-2 and from the exciton gas to the highly mobile charge separated electron/hole plasma for ne/h > 1012 cm-2. The latter is the Mott transition and is confirmed in photoconductivity measurements. These findings set fundamental limits for achieving quantum states of interlayer excitons., Comment: 11 pages, 4 figures, and SI with 14 figures

Moir\'e superlattices in van der Waals (vdW) heterostructures have given rise to a number of emergent electronic phenomena due to the interplay between atomic structure and electron correlations. A lack of a simple way to characterize moir\'e superlattices has impeded progress in the field. In this work we outline a simple, room-temperature, ambient method to visualize real-space moir\'e superlattices with sub-5 nm spatial resolution in a variety of twisted vdW heterostructures including but not limited to conducting graphene, insulating boron nitride and semiconducting transition metal dichalcogenides. Our method utilizes piezoresponse force microscopy, an atomic force microscope modality which locally measures electromechanical surface deformation. We find that all moir\'e superlattices, regardless of whether the constituent layers have inversion symmetry, exhibit a mechanical response to out-of-plane electric fields. This response is closely tied to flexoelectricity wherein electric polarization and electromechanical response is induced through strain gradients present within moir\'e superlattices. Moir\'e superlattices of 2D materials thus represent an interlinked network of polarized domain walls in a non-polar background matrix., Comment: 21 pages, 4 figures; updated text

Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above $10^{13} /cm^2$ to below $10^{11} /cm^2$. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.

Monolayer photonic materials offer a tremendous potential for on-chip optoelectronic devices. Their realization requires knowledge of optical coherence properties of excitons and trions that have so far been limited to nonlinear optical experiments carried out with strongly inhomogenously broadened material. Here we employ h-BN encapsulated and electrically gated MoSe2 to reveal coherence properties of trion-species directly in the linear optical response. Autocorrelation measurements reveal long dephasing times up to T2=1.16+-0.05 ps for positively charged excitons. Gate dependent measurements provide evidence that the positively-charged trion forms via spatially localized hole states making this trion less prone to dephasing in the presence of elevated hole carrier concentrations. Quantum beat signatures demonstrate coherent coupling between excitons and trions that have a dephasing time up to 0.6 ps, a two-fold increase over those in previous reports. A key merit of the prolonged exciton/trion coherences is that they were achieved in a linear optical experiment, and thus are directly relevant to applications in nanolasers, coherent control, and on-chip quantum information processing requiring long photon coherence., Comment: 21 pages, 6 figures, 2 SOI figures

Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find that encapsulation in hexagonal boron nitride (h-BN) sharply reduces the PL linewidth, and that passivation of the oxide substrate by an alkyl monolayer further decreases the linewidth and also minimizes the charged exciton (trion) peak. The combination of these sample preparation methods results in much reduced spatial variation in the PL emission, with a full-width-at-half-maximum as low as 1.7 meV. Analysis of the PL line shape yields a homogeneous width of 1.43$\pm$0.08 meV and inhomogeneous broadening of 1.1$\pm$0.3 meV., Comment: 16 pages, 4 figures

The recent discovery of exciton quantum emitters in transition metal dichalcogenides (TMDCs) has triggered renewed interest of localized excitons in low-dimensional systems. Open questions remain about the microscopic origin previously attributed to dopants and/or defects as well as strain potentials. Here we show that the quantum emitters can be deliberately induced by nanobubble formation in WSe2 and BN/WSe2 heterostructures. Correlations of atomic-force microscope and hyperspectral photoluminescence images reveal that the origin of quantum emitters and trion disorder is extrinsic and related to 10 nm tall nanobubbles and 70 nm tall wrinkles, respectively. We further demonstrate that hot stamping results in the absence of 0D quantum emitters and trion disorder. The demonstrated technique is useful for advances in nanolasers and deterministic formation of cavity-QED systems in monolayer materials., Comment: 17 pages, 6 figures

We measure the magnetic penetration depth $\Delta\lambda(T)$ for NdO$_{1-x}$F$_{x}$BiS$_{2}$ ($x$ = 0.3 and 0.5) using the tunnel diode oscillator technique. The $\Delta\lambda(T)$ shows an upturn in the low-temperature limit which is attributed to the paramagnetism of Nd ions. After subtracting the paramagnetic contributions, the penetration depth $\Delta\lambda(T)$ follows exponential-type temperature dependence at $T\ll T_c$. Both $\Delta\lambda(T)$ and the corresponding superfluid density $\rho_s(T)$ can be described by the BCS model with an energy gap of $\Delta(0)$ $\approx$ 2.0 $k_BT_c$ for both $x$ = 0.3 and 0.5, suggesting strong-coupling BCS superconductivity in the presence of localized moments for NdO$_{1-x}$F$_{x}$BiS$_{2}$., Comment: 4 pages and 4 figures

NdO$_{0.5}$F$_{0.5}$BiS$_{2}$ is a new layered superconductor. We have studied the low-lying electronic structure of a single crystalline NdO$_{0.5}$F$_{0.5}$BiS$_{2}$ superconductor, whose superconducting transition temperature is 4.87K, with angle-resolved photoemission spectroscopy. The Fermi surface consists of two small electron pockets around the X point and shows little warping along the $k_z$ direction. Our results demonstrate the multi-band and two-dimensional nature of the electronic structure. The good agreement between the photoemission data and the band calculations gives the renormalization factor of 1, indicating the rather weak electron correlations in this material. Moreover, we found that the actual electron doping level and Fermi surface size are much smaller than what are expected from the nominal composition, which could be largely explained by the bismuth dificiency. The small Fermi pocket size and the weak electron correlations found here put strong constraints on theory, and suggest that the BiS$_2$-based superconductors could be conventional BCS superconductors mediated by the electron-phonon coupling., Comment: 5 pages, 4 figures

We report the discovery of superconductivity at 2.3 K in Zr5Sb3, the first superconducting member in the large compound family of the Mn5Si3-structure type. Transport, magnetic, and calorimetric measurements and band structure calculations show it to be a phonon-mediated BCS superconductor, with a relatively large density of states at the Fermi level associated with the d-electrons of Zr and substantially larger electron-phonon coupling compared to the Sn counterpart compound Zr5Sn3. More superconductors with even higher transition temperatures are expected to be found in this family of compounds., Comment: 13 pages, 8 figures