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For over half a century, traditional silicon-based integrated circuits (ICs) have been the basis of computational electronics and are widely used in computers, cell phones, and other fields. With the rapid development of human society, silicon-based semiconductor technology is approaching its physical and engineering limits. Our increasing diversity of non-traditional computing needs, such as ultra-small, ultra-fast, ultra-low-power wearables, and space radiation protection, is driving the search for new electronic materials. Semiconducting single-walled carbon nanotubes (s-SWCNTs) have many excellent electrical properties, such as high carrier mobility and high ballistic transport, making them strong candidates for new semiconductor materials in the post-Moore era. Carbon-based electronic technology has been developed for over 20 years, and the fundamental issues such as the material purification of s-SWCNTs, preparation prospects of s-SWCNT-based field-effect transistors (CNT FETs), and device physics based on CNT FETs have been basically solved. However, the chiral diversity of s-SWCNTs may lead to problems such as fluctuations in the electrical performance of CNT FETs, limiting the application of s-SWCNTs in high-end ICs. Monochiral s-SWCNTs not only have excellent electrical properties but also have a controllable structure and uniformity, which are crucial for the high-end IC of CNTs. However, some problems exist in the purity and yield of monochiral s-SWCNT preparation and the optimization of monochiral CNT FETs. Therefore, the chiral sorting of CNTs is reviewed in this paper, and the progress of polymer reprocessing in chiral separation is highlighted. Then, the research progress of monochiral CNT FETs is introduced, and possible development directions are summarized and analyzed. Finally, the application prospects of chiral-enriched s-SWCNTs include challenges and future opportunities. [ABSTRACT FROM AUTHOR]

Background: Crohn's disease (CD) is a chronic intestinal inflammatory disease associated with genetic, environmental, and other unknown factors. Cluster of differentiation 36 (CD36) plays an important role in cancer, inflammation, and metabolic diseases. Although CD36 has recently been implicated in various diseases, its role in CD is still unclear. Methods: Blood samples were collected from patients with CD and healthy volunteers. Peripheral blood mononuclear cells (PBMCs) were isolated by density gradient centrifugation over Ficoll–Paque and labeled with monoclonal antibodies (CD14‐APC and CD36‐PE). Flow cytometer CytoFlex is used for analysis. Results: Twenty‐nine patients with CD in remission, 42 patients with active CD, and 23 healthy volunteers were included in the study. Our results showed that the frequency of the CD14+CD36+ monocyte subset was increased in PBMCs from patients with active CD compared with patients in remission and healthy controls. However, CD36 on monocytes was lower in CD compared with the healthy controls. CD36 expression was decreased in patients with active CD compared with that of patients with CD in remission and healthy control subjects, but no difference was found between patients with CD in remission and healthy controls. Interestingly, we found negative correlations of CD36 with HBI, SES‐CD, C‐reactive protein, and neutrophil‐to‐lymphocyte ratio. Conclusions: These data indicate that monocyte CD36 associates with disease activity in CD and might be a potential biomarker for assessing the activity of CD. [ABSTRACT FROM AUTHOR]

Background: Ulcerative colitis (UC) is a long-lasting idiopathic condition, but its precise mechanisms remain unclear. Meanwhile, evidence has demonstrated that ferroptosis seems to interlock with the progress of UC. This research sought to identify hub genes of UC related to ferroptosis. Methods: First, the relevant profiles for this article were obtained from GEO database. From the FerrDb, 479 genes linked to ferroptosis were retrieved. Using analysis of the difference and WGCNA on colonic samples from GSE73661, the remaining six hub genes linked to ferroptosis and UC were discovered. Through logistic regression analyses, the diagnostic model was constructed and was then evaluated by external validation using dataset GSE92415. Afterwards, the correlation between immune cell filtration in UC and hub genes was examined. Finally, a mice model of colitis was established, and the results were verified using qRT-PCR. Results: We acquired six hub genes linked to ferroptosis and UC. In order to create a diagnostic model for UC, we used logistic regression analysis to screen three of the six ferroptosis related genes (HIF1A, SLC7A11, and LPIN1). The ROC curve showed that the three hub genes had outstanding potential for disease diagnosis (AUC = 0.976), which was subsequently validated in samples from GSE92415 (AUC = 0.962) and blood samples from GSE3365 (AUC = 0.847) and GSE94648 (AUC = 0.769). These genes might be crucial for UC immunity based upon the results on the immune system. Furthermore, mouse samples examined using qRT-PCR also verified our findings. Conclusion: In conclusion, the findings have important implications for ferroptosis and UC, and these hub genes may also offer fresh perspectives on the aetiology and therapeutic approaches of UC. [ABSTRACT FROM AUTHOR]

In this study, the negative shift of the threshold voltage (VTH) and degradation of the leakage current triggered by the ultraviolet (UV) light (375 nm) have been investigated when a large reverse gate-to-drain voltage was applied to a Si3N4/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor. However, an increase in leakage was not observed under the blue light or in the dark. The holes generated in the channel by UV illumination were attracted by the gate electrode owing to the reverse voltage. During the movement, holes were captured by border traps at very deep levels in the Si3N4 near AlGaN, leading to a negative shift of VTH that was difficult to recover. According to the simulation based on Silvaco Atlas TCAD, the trapped holes significantly increased the electric field strength in Si3N4. Therefore, as the injection barrier for electrons from the gate became thinner, it was easier for electrons to tunnel through the Si3N4. Finally, for the degraded devices under the UV light stress, Fowler-Nordheim tunneling was the dominant leakage conduction mechanism, as exhibited by the current density versus electric field strength curve fitting. In addition, the holes with high energies collided with Si3N4 and generated new defects at the edge of the gate near the drain side. [ABSTRACT FROM AUTHOR]

Low-damage plasma oxidation treatment for AlN/GaN high-electron-mobility transistors (HEMTs) was developed in this letter, with which high-performance enhancement-mode (E-mode) AlON/AlN/GaN HEMTs were demonstrated. After removal of in situ SiN cap layer within gate area, remote plasma oxidation (RPO) treatment of 4.9nm AlN barrier layer at 300 °C leads to formation of AlON insulator layer and effective depletion of 2-D electron gas channel, without etch-induced damage or serious interfacial issues compared with the commonly used gate- recess metal-insulator-semiconductor HEMTs. Thanks to the low-damage RPO treatment, the achieved E-mode HEMTs with threshold voltage of 0.4 V exhibit quite a small loss of output current (7.8%) compared with the depletion-mode devices. In addition, the AlON gate insulator layer results in a remarkable increase in breakdown voltage of devices from 20 V to 74 V, which benefits the high-voltage operation of AlN/GaN technology. Further investigation shows that the oxidation process of AlN barrier tends to be saturated with treatment time increasing, providing a promising solution to the high-performance E-mode operation of scaled GaN-based HEMTs in RF applications. [ABSTRACT FROM AUTHOR]