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C32H56F24N8P4, triclinic, P1‾$P‾{1}$ (no. 2), a = 8.6769(13) Å, b = 9.8858(14) Å, c = 14.510(2) Å, α = 102.564(2)°, β = 94.461(3)°, γ = 92.152(3)°, V = 81.710(2) Å3, Z = 1, Rgt(F) = 0.0692, wRref(F2) = 0.2245, T = 296(2) K.

C11H18F12N4P2, monoclinic, P21/c (no. 14), a = 14.975(3) Å, b = 9.897(2) Å, c = 13.525(3) Å, β = 105.507(3)°, V = 1931.5(7) Å3, Z = 4, Rgt(F) = 0.0590, wRref(F2) = 0.1843, T = 296(2) K.

Bombyx mori nucleopolyhedrovirus (BmNPV) is a DNA virus that causes huge losses to the silkworm industry but the piRNA responses during BmNPV infection in the silkworm remain uninvestigated. Here, silkworm piRNA profiles of uninfected and BmNPV‐infected fat body and midgut were determined by high‐through sequencing in the early stages of BmNPV infection. A total of 2675 and 3396 genome‐derived piRNAs were identified from fat body and midgut, respectively. These genome‐derived piRNAs mainly originated from unannotated instead of transposon regions in the silkworm genome. In total, 572 piRNAs were associated with 280 putative target genes in fat body and 805 piRNAs with 380 target genes in midgut. Compared to uninfected tissues, 322 and 129 piRNAs were significantly upregulated in BmNPV‐infected fat body and midgut, respectively. In addition, 276 and 117 piRNAs were significantly downregulated. Moreover, differentially expressed (DE) piRNAs during BmNPV infection differed significantly between fat body and midgut. Putative DE piRNA–targeted genes were associated with "response to stimulus" and "environmental information processing" in fat body after infection with BmNPV, which may indicate an active piRNA response to BmNPV infection in fat body. This study may lay the foundation for future research of the potential roles of the piRNA pathway and specific piRNAs in BmNPV pathogenesis. [ABSTRACT FROM AUTHOR]

C32H56F24N8P4, triclinic, P 1 ‾ $P‾{1}$ (no. 2), a = 8.6769(13) Å, b = 9.8858(14) Å, c = 14.510(2) Å, α = 102.564(2)°, β = 94.461(3)°, γ = 92.152(3)°, V = 81.710(2) Å3, Z = 1, Rgt(F) = 0.0692, wRref(F2) = 0.2245, T = 296(2) K. [ABSTRACT FROM AUTHOR]

C32H56F24N8P4, triclinic, P 1 ‾ $P‾{1}$ (no. 2), a = 8.6769(13) Å, b = 9.8858(14) Å, c = 14.510(2) Å, α = 102.564(2)°, β = 94.461(3)°, γ = 92.152(3)°, V = 81.710(2) Å3, Z = 1, Rgt(F) = 0.0692, wRref(F2) = 0.2245, T = 296(2) K. [ABSTRACT FROM AUTHOR]

C11H18F12N4P2, monoclinic, P21/c (no. 14), a = 14.975(3) Å, b = 9.897(2) Å, c = 13.525(3) Å, β = 105.507(3)°, V = 1931.5(7) Å3, Z = 4, Rgt(F) = 0.0590, wRref(F2) = 0.1843, T = 296(2) K. [ABSTRACT FROM AUTHOR]

C11H18F12N4P2, monoclinic, P21/c (no. 14), a = 14.975(3) Å, b = 9.897(2) Å, c = 13.525(3) Å, β = 105.507(3)°, V = 1931.5(7) Å3, Z = 4, Rgt(F) = 0.0590, wRref(F2) = 0.1843, T = 296(2) K. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) transition metal dichalcogenides lateral heterostructures exhibit excellent performance in electrics and optics. The electron transport of the heterostructures can be effectively regulated by ingenious design. In this study, we construct a monolayer MoSe 2 /WSe 2 lateral heterostructure, covalently connecting monolayer MoSe 2 and monolayer WSe 2 . Using the Extended Huckel Theory method, we explored current-voltage characteristics under varied conditions, including altering carrier density, atomic replacement and interface angles. Calculations demonstrate a significant electrical rectification ratio (ERR) ranging from 200 to 800. Additionally, Employing Density Functional Theory with non-equilibrium Green's function method, we investigated electronic properties, attributing the rectification effect to electronic state distribution differences, asymmetric transmission coefficients and band bending of projected local density of states. The expandability of the interfacial energy barrier enhances the rectification effect through adjustments in carrier concentration, atomic replacements and interface size. However, these enhancements introduce challenges such as increased electron-boundary scattering and reduced ambipolarity, resulting in a lower ERR. This study provides valuable theoretical insights for optimizing 2D electronic diode devices, offering avenues for precise control of the rectification effect., (© 2024 IOP Publishing Ltd.)