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In this article, fluorine (F)-doped SnO2 (FTO) thin-film transistors (TFTs) are fabricated by the solution process with a low process temperature (300°C). The FTO film characteristic, TFT electrical performance, and stability under the negative bias illumination stress (NBIS) are improved by F doping. The enhancement in electrical performance and stability is because F can substitute oxygen atom in the lattice and oxygen vacancies in FTO system. The FTO TFT with 3 mol.% F doping ratio shows superior electrical performance with saturation mobility ($\mu$) of 14.48 cm2/ $\text{V}\cdot \text{s}$ , a threshold voltage (${V}_{{\text {TH}}}$) of 1.01 V, a subthreshold swing (SS) of 0.19 V/decade, and an ON/OFF current ratio (${I}_{{\text {on}}}/{I}_{{\text {off}}})$ of $9.32\times 10^{{7}}$. Furthermore, the 3 mol.% FTO TFT shows only −0.8 V ${V}_{{\text {TH}}}$ shift under NBIS. The total density of states (DOSs) for the FTO TFT is extracted in order to further verify the stability improvement based on the temperature-dependence field-effect measurement. The results indicate that the simple solution-processed FTO-TFT is promising for application in electronics. [ABSTRACT FROM AUTHOR]

Abstract: In this work, the high κ ZrxAl1−xOy films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric properties of ZrxAl1−xOy films is analyzed by Atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and capacitance-frequency measurement. The effect of Zr concentrations of ZrxAl1-xOy gate insulator on the electrical property and stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is firstly investigated. Under NBIS and TS, the much better stability of ZTO TFTs with ZrxAl1−xOy film as a gate insulator is due to the suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeation at the ZTO/ZrxAl1−xOy interface. It provides a new strategy to fabricate the low consumption and high stability ZTO TFTs for application.Graphical Abstract: [ABSTRACT FROM AUTHOR]