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Your search keyword '"Zhou, X.C."' showing total 34 results
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34 results on '"Zhou, X.C."'

30. Experience with Repair of Hypospadias Using Bladder Mucosa in Adolescents and Adults

Author

Li, L.C., Zhang, X., Zhou, S.W., Zhou, X.C., Yang, W.M., and Zhang, Y.S.

Abstract

From July 1984 to January 1994, 113 hypospadias operations were performed using a free bladder mucosa graft. There were 31 primary cases and 82 secondary cases in which prior operations had been done. The meatus was penile in 33 patients, penoscrotal in 72 and perineal in 8. The cosmetic and functional results were satisfactory. Postoperative complications included 8 fistulas that required closure and 6 cases of stenosis treated by dilation. Our results suggest that hypospadias repair with a bladder mucosa graft is feasible and reliable. The technique has been performed successfully in the most complex as well as simple cases in adults and adolescents.

Published
1995
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31. SOI high-voltage LDMOS with novel triplelayer top silicon based on thin BOX.

Author

Hu, S. D., Zhang, L., Luo, J., Tan, K. Z., Chen, W. S., Gan, P., Zhou, X.C., and Zhu, Z.

Subjects
SILICON, ELECTRIC fields, HIGH voltages, DIELECTRICS, ELECTRIC breakdown
Abstract

A novel SOI high-voltage LDMOS with a triple-layer top silicon (TLTS) is investigated. The top silicon layer of the TLTS LDMOS consists of n - silicon with a p-top layer, p - silicon in the middle, and n + silicon on the interface. On the condition of high-voltage blocking state, the electric fields of the drift region and BOX are modulated and optimised by the triple-layer top silicon, respectively, which induces a high BV of 624 V for the TLTS LDMOS with a thin buried oxide layer (BOX) of 0.4 μm. Compared with several SOI devices, the proposed TLTS LDMOS has a higher figure-of-merit. [ABSTRACT FROM AUTHOR]

Published
2013
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32. Determination of the condition-band offset a single AlGaAs barrier layer using deep level....

Author

Zhu, Q.S., Mou, S.M., Zhou, X.C., and Zhong, Z.T.

Subjects
CONDUCTION bands, HETEROSTRUCTURES, DEEP level transient spectroscopy, ELECTRON emission
Abstract

Examines the conduction band offset in a gallium arsenide/aluminum gallium arsenide/gallium arsenide heterostructures. Use of deep level transient spectroscopy; Electron emission from the deep traps in the barrier layer of the structure; Measurement of the offset by tunneling effect.

Published
1993
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34. The improvement of structure and photoluminescence properties of ZnAl2O4:Cr3 + ceramics synthesized by using solvothermal method.

Author

Zhang, D., Qiu, Y.H., Xie, Y.R., Zhou, X.C., Wang, Q.R., Shi, Q., Li, S.H., and Wang, W.J.

Subjects
*PHOTOLUMINESCENCE, *ZINC compounds, *NANOCRYSTALS, *SODIUM acetate, *SINGLE crystals
Abstract

ZnAl 2 O 4 :Cr 3 + nanocrystals were fabricated by using solvothermal method at various temperatures ranging from 160 °C to 220 °C. The influence of sodium acetate (NaAC) on the structural, photoluminescence and magnetic properties of Cr-doped zinc aluminate ceramics was investigated. The results showed that ZnAl 2 O 4 :Cr 3 + polycrystals with sphere morphology (about 500 nm) were formed without NaAC in precursors, while after adding NaAC into the precursors, octahedral and hexagonal single crystals of ZnAl 2 O 4 :Cr 3 + were present. The PL spectra showed a series of sharp emission peaks ranging from 650 nm to 730 nm assigned to spin-forbidden 2 E g → 4 A 2g transition of Cr 3 + ions in spinel lattices corresponding to the result of EPR. Comparing to the PL spectra of ZnAl 2 O 4 :Cr 3 + nanocrystals prepared by using sol-gel method, the intensity of R lines (originating from 2 E g → 4 A 2g transition of Cr 3 + ions in normal spinel lattices) was much larger than that of N lines (originating from 2 E g → 4 A 2g transition of Cr 3 + ions in inverse spinel lattices) for all samples. The EPR and VSM results showed that with grain size increasing, the interaction between Cr-Cr ions became weaker and the ferromagnetism of ZnAl 2 O 4 :Cr 3 + nanocrystals was enhanced. [ABSTRACT FROM AUTHOR]

Published
2017
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