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Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseudomorphic growth of Si1-x-yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, X-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4x1019 cm-3.

For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band gap and strain engineering and can improve the carrier mobilities, which makes Si1-x-yGeySnx alloys promising candidates for future opto- and nanoelectronics applications. The bottom-up approach for epitaxial growth of Si1-x-yGeySnx, e.g., by chemical vapor deposition and molecular beam epitaxy, allows tuning the material properties in the growth direction only; the realization of local material modifications to generate lateral heterostructures with such a bottom-up approach is extremely elaborate, since it would require the use of lithography, etching, and either selective epitaxy or epitaxy and chemical-mechanical polishing giving rise to interface issues, non-planar substrates, etc. This article shows the possibility of fabricating Si1-x-yGeySnx alloys by Sn ion beam implantation into Si1-yGey layers followed by millisecond-range flash lamp annealing (FLA). The materials are investigated by Rutherford backscattering spectrometry, micro Raman spectroscopy, X-ray diffraction, and transmission electron microscopy. The fabrication approach was adapted to ultra-thin Si1-yGey layers on silicon-on-insulator substrates. The results show the fabrication of single-crystalline Si1-x-yGeySnx with up to 2.3 at.% incorporated Sn without any indication of Sn segregation after recrystallization via FLA. Finally, we exhibit the possibility of implanting Sn locally in ultra-thin Si1-yGey films by masking unstructured regions on the chip.

This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis of the PL data robustly unveils energy splittings, bandgaps and excitonic transitions across different thicknesses of CrSBr, ranging from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the N\'eel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal band splitting in both the conduction and valence bands, but also point to an intricate interplay between the optical, electronic and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals.

Van der Waals magnetic materials are an ideal platform to study low-dimensional magnetism. Opposed to other members of this family, the magnetic semiconductor CrSBr is highly resistant to degradation in air, which, besides its exceptional optical, electronic, and magnetic properties, is the reason the compound is receiving considerable attention at the moment. For many years, its magnetic phase diagram seemed to be well-understood. Recently, however, several groups observed a magnetic transition in magnetometry measurements at temperatures of around 40 K that is not expected from theoretical considerations, causing a debate about the intrinsic magnetic properties of the material. In this letter, we report the absence of this particular transition in magnetization measurements conducted on high-quality CrSBr crystals, attesting to the extrinsic nature of the low-temperature magnetic phase observed in other works. Our magnetometry results obtained from large bulk crystals are in very good agreement with the magnetic phase diagram of CrSBr previously predicted by the mean-field theory; A-type antiferromagnetic order is the only phase observed below the N\'eel temperature at TN = 131 K. Moreover, numerical fits based on the Curie-Weiss law confirm that strong ferromagnetic correlations are present within individual layers even at temperatures much larger than TN., Comment: 13 pages, submitted to Appl. Phys. Lett

The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling between its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in nanometer-thick CrSBr. By careful analysis, we identify that the satellite peaks predominantly arise from the interaction between the exciton and an optical phonon with a frequency of 118 cm-1 (~14.6 meV) due to the out-of-plane vibration of Br atoms. Power-dependent and temperature-dependent photoluminescence measurements support exciton-phonon coupling and indicate a coupling between magnetic and optical properties, suggesting the possibility of carrier localization in the material. The presence of strong coupling between the exciton and the lattice may have important implications for the design of light-matter interactions in magnetic semiconductors and provides new insights into the exciton dynamics in CrSBr. This highlights the potential for exploiting exciton-phonon coupling to control the optical properties of layered antiferromagnetic materials., Comment: 21 pages, together with suppl

Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic ions. Already at moderate fluences, ion irradiation induces a remanent magnetization with hysteresis adapting to the easy-axis anisotropy of the pristine magnetic order up to a critical temperature of 110 K. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggest that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favors ferromagnetic order between the layers., Comment: 25 pages including the supporting information, published as Nano Lett. 23, 8468-8473 (2023)

Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology., Comment: 18 pages, 5 Figures, Supplementary information

We present all-electrical operation of a Fe$_x$Cr$_{1-x}$-based Curie switch at room temperature. More specifically, we study the current-induced thermally-driven transition from ferromagnetic to antiferromagnetic Ruderman-Kittel-Kasuya-Yosida (RKKY) indirect coupling in a Fe/Cr/Fe$_{17.5}$Cr$_{82.5}$/Cr/Fe multilayer. Magnetometry measurements at different temperatures show that the transition from the ferromagnetic to the antiferromagnetic coupling at zero field is observed at $\sim$325K. Analytical modelling confirms that the observed temperature-dependent transition from indirect ferromagnetic to indirect antiferromangetic interlayer exchange coupling originates from the modification of the effective interlayer exchange constant through the ferromagnetic-to-paramagnetic transition in the Fe$_{17.5}$Cr$_{82.5}$ spacer with minor contributions from the thermally-driven variations of the magnetization and magnetic anisotropy of the Fe layers. Room-temperature current-in-plane magnetotransport measurements on the patterned Fe/Cr/Fe$_{17.5}$Cr$_{82.5}$/Cr/Fe strips show the transition from the 'low-resistance' parallel to the 'high-resistance' antiparallel remanent magnetization configuration, upon increased probing current density. Quantitative comparison of the switching fields, obtained by magnetometry and magnetotransport, confirms that the Joule heating is the main mechanism responsible for the observed current-induced resistive switching., Comment: 8 pages, 4 figures

Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by pulsed laser annealing. The dopant concentration is variable and high above the solubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these configurations a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions this matches the expectations. For multi-Te configurations the results contribute to understanding the exceptional activation of free charge carriers in hyperdoping of chalcogens in silicon., Comment: 5 pages, 4 figures

Magnetic garnets such as yttrium iron garnet (Y$_3$Fe$_5$O$_{12}$, YIG) are widely used in spintronic and magnonic devices. Their magnetic and magneto-optical properties can be modified over a wide range by tailoring their chemical composition. Here, we report the successful growth of Al-substituted yttrium iron garnet (YAlIG) thin films via radio frequency sputtering in combination with an ex situ annealing step. Upon selecting appropriate process parameters, we obtain highly crystalline YAlIG films with different Al$^{3+}$ substitution levels on both, single crystalline Y$_3$Al$_5$O$_{12}$ (YAG) and Gd$_3$Ga$_5$O$_{12}$ (GGG) substrates. With increasing Al$^{3+}$ substitution levels, we observe a reduction of the saturation magnetisation as well as a systematic decrease of the magnetic ordering temperature to values well below room temperature. YAlIG thin films thus provide an interesting material platform for spintronic and magnonic experiments in different magnetic phases.

Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, both maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order-disorder transition induced polar nanoregions (PNRs) have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 J/cm3 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities.

B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature. In this work, we grow MnSi films on Si(100) and Si(111) substrates with a broad variation in their structures. By controlling the Mn thickness and annealing parameters, the pure MnSi phase of polycrystalline and textured nature as well as the mixed phase of MnSi and MnSi1.7 are obtained. Surprisingly, all these MnSi films show an increased Curie temperature of up to around 43 K. The Curie temperature is likely independent of the structural parameters within our accessibility including the film thickness above a threshold, strain, cell volume and the mixture with MnSi1.7. However, a pronounced phonon softening is observed for all samples, which can tentatively be attributed to slight Mn excess from stoichiometry, leading to the increased Curie temperature., Comment: 20 pages, 6 figures

Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the one-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems., Comment: 20 pages, 5 figures

The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable doping. In this work, we demonstrate n-type doping in MoSe2 flakes realized by low-energy ion implantation of Cl+ ions followed by millisecond-range flash lamp annealing (FLA). We further show that FLA for 3 ms with a peak temperature of about 1000 {\deg}C is enough to recrystallize implanted MoSe2. The Cl distribution in few-layer-thick MoSe2 is measured by secondary ion mass spectrometry. An increase in the electron concentration with increasing Cl fluence is determined from the softening and red shift of the Raman-active A_1g phonon mode due to the Fano effect. The electrical measurements confirm the n-type doping of Cl-implanted MoSe2. A comparison of the results of our density functional theory calculations and experimental temperature-dependent micro-Raman spectroscopy data indicates that Cl atoms are incorporated into the atomic network of MoSe2 as substitutional donor impurities., Comment: 32 pages, 10 figures

Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSi films have been successfully grown on Si(111) substrates, there is no report about B20-MnSi films on Si(100) substrates, which would be more preferred for practical applications. In this letter, we present the first preparation of B20-MnSi on Si(100) substrates. It is realized by sub-second solid-state reaction between Mn and Si via flash-lamp annealing at ambient pressure. The regrown layer shows an enhanced Curie temperature of 43 K compared with bulk B20-MnSi. The magnetic skyrmion signature is proved in our films by magnetic and transport measurements. The millisecond-range flash annealing provides a promising avenue for the fabrication of Si-based skyrmionic devices., Comment: 17 pages, accepted at Materials Today Physics

Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for understanding many-body phenomena. Therefore, it is important to enhance the trion emission and its stability. In this study, we construct a MoSe2/FePS3 van der Waals heterostructure (vdWH) with type-I band alignment, which allows for carriers injection from FePS3 to MoSe2. At low temperatures, the neutral exciton (X0) emission in this vdWH is almost completely suppressed. The ITrion/Ix0 intensity ratio increases from 0.44 in a single MoSe2 monolayer to 20 in this heterostructure with the trion charging state changing from negative in the monolayer to positive in the heterostructure. The optical pumping with circularly polarized light shows a 14% polarization for the trion emission in MoSe2/FePS3. Moreover, forming such type-I vdWH also gives rise to a 20-fold enhancement of the room temperature photoluminescence from monolayer MoSe2. Our results demonstrate a novel approach to convert excitons to trions in monolayer 2D TMDCs via interlayer doping effect using type-I band alignment in vdWH., Comment: 21 pages, including the suppl. materials, accepted at Adv. Fun. Mater

Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive study of a room-temperature MWIR photodetector based on Si hyperdoped with Te. The demonstrated MWIR p-n photodiode exhibits a spectral photoresponse up to 5 {\mu}m and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0-1.9 {\mu}m. We also investigate the correlation between the background noise and the sensitivity of the Te-hyperdoped Si photodiode, where the maximum room-temperature specific detectivity is found to be 3.2 x 10^12 cmHz^{1/2}W^{-1} and 9.2 x 10^8 cmHz^{1/2}W^{-1} at 1 {\mu}m and 1.55 {\mu}m, respectively. This work contributes to pave the way towards establishing a Si-based broadband infrared photonic system operating at room temperature., Comment: 24 pages, 5 figures, to be published at Adv. Opt. Mater

The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology., Comment: 19 pages, 5 figures, to be published at New J. Phys

The combination of different exotic properties in materials paves the way for the emergence of their new potential applications. An example is the recently found coexistence of the mutually antagonistic ferromagnetism and superconductivity in hydrogenated boron-doped diamond, which promises to be an attractive system with which to explore unconventional physics. Here, we show the emergence of Yu-Shiba-Rusinov (YSR) bands with a spatial extent of tens of nanometers in ferromagnetic superconducting diamond using scanning tunneling spectroscopy. We demonstrate theoretically how a two-dimensional (2D) spin lattice at the surface of a three-dimensional (3D) superconductor gives rise to the YSR bands, and how their density-of-states profile correlates with the spin lattice structure. The established strategy to realize new forms of the coexistence of ferromagnetism and superconductivity opens a way to engineer the unusual electronic states and also to design better performing superconducting devices., Comment: 13 pages, 5 figures

The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study THE is observed in 60 nm thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 K to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii-Moriya interaction as a result of artificial inversion symmetry breaking associated to the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronics devices., Comment: 18 pages, including the suppl. material, to be published at Advanced Electronic Materials

Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2-50 K. These results show that the electron wave-function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction., Comment: 19 pages, 6 figures

Interfaces separating ferromagnetic (FM) layers from non-ferromagnetic layers offer unique properties due to spin-orbit coupling and symmetry breaking, yielding effects such as exchange bias, perpendicular magnetic anisotropy, spin-pumping, spin-transfer torques, conversion between charge and spin currents and vice-versa. These interfacial phenomena play crucial roles for magnetic data storage and transfer applications, which require forming FM nano-structures embedded in non-ferromagnetic matrices. Here, we investigate the possiblity of creating such nano-structures by ion-irradiation. We study the effect of lateral confinement on the ion-irradiation-induced reduction of non-magnetic metal oxides (e.g., antiferro- or paramagnetic) to form ferromagnetic metals. Our findings are later exploited to form 3-dimensional magnetic interfaces between Co, CoO and Pt by spatially-selective irradiation of CoO/Pt multilayers. We demonstrate that the mechanical displacement of the O atoms plays a crucial role during the reduction from insulating, non-ferromagnetic cobalt oxides to metallic cobalt. Metallic cobalt yields both perpendicular magnetic anisotropy in the generated Co/Pt nano-structures, and, at low temperatures, exchange bias at vertical interfaces between Co and CoO. If pushed to the limit of ion-irradiation technology, this approach could, in principle, enable the creation of densely-packed, atomic scale ferromagnetic point-contact spin-torque oscillator (STO) networks, or conductive channels for current-confined-path based current perpendicular-to-plane giant magnetoresistance read-heads., Comment: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces copyright \c{opyright} American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https:// pubs.acs.org/articlesonrequest/AOR-rPGr2e7nZ7tzzwK3tnBZ

Ferromagnetism in certain B2 ordered alloys such as Fe$_{60}$Al$_{40}$ can be switched on, and tuned, via antisite disordering of the atomic arrangement. The disordering is accompanied by a $\sim$1 % increase in the lattice parameter. Here we performed a systematic disordering of B2 Fe$_{60}$Al$_{40}$ thin films, and obtained correlations between the order parameter ($S$), lattice parameter ($a_0$), and the induced saturation magnetization ($M_{s}$). As the lattice is gradually disordered, a critical point occurs at 1-$S$=0.6 and $a_0$=291 pm, where a sharp increase of the $M_{s}$ is observed. DFT calculations suggest that below the critical point the system magnetically behaves as it would still be fully ordered, whereas above, it is largely the increase of $a_0$ in the disordered state that determines the $M_{s}$. The insights obtained here can be useful for achieving tailored magnetic properties in alloys through disordering., Comment: 6 pages, 3 figures

In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases, which should theoretically lead to an increase of the Curie temperature (TC) according to the p-d Zener model. Unexpectedly, although the film keeps its epitaxial structure, both TC and the magnetization decrease. The samples present a phase transition from ferromagnetism to paramagnetism upon increasing hole concentration. In the intermediate regime, we observe a signature of antiferromagnetism. By using channeling Rutherford backscattering spectrometry and particle-induced x-ray emission, the substitutional Mn atoms are observed to shift to interstitial sites, while more Zn atoms occupy Ga sites, which explains the observed behavior. This is also consistent with first-principles calculations, showing that the complex of substitutional Zn and interstitial Mn has the lowest formation energy., Comment: 21 pages, 8 figures

A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is presented in this work. In all materials, both Curie temperature and magnetization decrease upon increasing the hole compensation, confirming the description of hole mediated ferromagnetism according to the p-d Zener model. The material dependence of Curie temperature and magnetization versus hole compensation reveals that the manipulation of magnetic properties in III-Mn-V dilute ferromagnetic semiconductors by ion irradiation is strongly influenced by the energy level location of the produced defect relative to the band edges in semiconductors., Comment: 11 pages, 4 figures

Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsd\"orfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystalline Ge hyperdoped with gallium or aluminium by ion implantation and rear-side flash lamp annealing. The maximum concentration of Al and Ga incorporated into substitutional positions in Ge is eight times higher than the equilibrium solid solubility. This corresponds to a hole concentration above 10^21 cm-3. Using density functional theory in the local density approximation and pseudopotential plane-wave approach, we show that the superconductivity in p-type Ge is phonon-mediated. According to the ab initio calculations the critical superconducting temperature for Al- and Ga-doped Ge is in the range of 0.45 K for 6.25 at.% of dopant concentration being in a qualitative agreement with experimentally obtained values., Comment: including the suppl. information, 24 pages, accepted at Phys. Rev. Materials

Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean field theory (DFT+DMFT) calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of out-of-plane lattice constant. These findings provide new insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons., Comment: 17 pages, 4 figures,submitted to Phys. Rev. Materials

Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, accurate control the concentration of defects remains a big challenge. In this work, ion implantation, that can provide controllable point defects, allows us the ability to produce a controlled defect-driven true super-tetragonal (T) phase with enhanced tetragonality in ferroelectric BiFeO3 thin films. This point defect engineering is found to drive the phase transition from the as-grown mixed rhombohedral-like (R) and tetragonal-like (MC) phase to true tetragonal (T) symmetry. By further increasing the injected dose of He ion, we demonstrate an enhanced tetragonality super-tetragonal (super-T) phase with the largest c/a ratio (~ 1.3) that has ever been experimentally achieved in BiFeO3. A combination of morphology change and domain evolution further confirm that the mixed R/MC phase structure transforms to the single-domain-state true tetragonal phase. Moreover, the re-emergence of R phase and in-plane stripe nanodomains after heat treatment reveal the memory effect and reversible phase transition. Our findings demonstrate the control of R-Mc-T-super T symmetry changes and the creation of true T phase BiFeO3 with enhanced tetragonality through controllable defect engineering. This work also provides a pathway to generate large tetragonality (or c/a ratio) that could be extended to other ferroelectric material systems (such as PbTiO3, BaTiO3 and HfO2) which may lead to strong polarization enhancement.

Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology., Comment: 20 pages, 6 figures

Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These properties are expected to be sensitive to a post-synthesis thermal annealing, since hyperdoped Si is a thermodynamically metastable material. Thermal stability of the as-fabricated hyperdoped Si is of great importance for the device fabrication process involving temperature-dependent steps like ohmic contact formation. Here, we report on the thermal stability of the as-fabricated Te-hyperdoped Si subjected to isochronal furnace anneals from 250 {\deg}C to 1200 {\deg}C. We demonstrate that Te-hyperdoped Si exhibits thermal stability up to 400 {\deg}C with a duration of 10 minutes that even helps to further improve the crystalline quality, the electrical activation of Te dopants and the room-temperature sub-band gap absorption. At higher temperatures, however, Te atoms are found to move out from the substitutional sites with a migration energy of EM = 2.1+/-0.1 eV forming inactive clusters and precipitates that impair the structural, electrical and optical properties. These results provide further insight into the underlying physical state transformation of Te dopants in a metastable compositional regime caused by post-synthesis thermal annealing as well as pave the way for the fabrication of advanced hyperdoped Si-based devices.

Proton irradiation of both n-type and semi-insulating bulk samples of \b{eta}-Ga2O3 leads to the formation of one paramagnetic defect with spin S=1/2, monoclinic point symmetry, a g-tensor with principal values of gb=2.0313, gc=2.0079, ga*= 2.0025 and quasi isotropic superhyperfine interaction of 13G with two equivalent Ga neigbours. Its high introduction rate indicates it to be a primary irradiation induced defect. At low temperature, photoexcitation transforms this defect into a different metastable S=1/2 center with principal g-values of gb=2.0064, gc=2.0464, ga*= 2.0024 and a reduced hyperfine interaction of 9G. This metastable defect is stable up to T=100K, when it switches back to the previous configuration. Density functional theory calculations of the Spin Hamiltonian parameters of various intrinsic defects are carried out using the Gauge Including Projector Augmented Wave method in order to determine the microscopic structure of these defects.Our results do not support the intuitive model of the isolated octahedral or tetrahedral gallium vacancy, VGa2-, but favor the model of a gallium vacancy complex VGa-Gai-VGa., Comment: 12 figures

Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at the ambient pressure. The single crystalline Mn5Ge3 is ferromagnetic with a Curie temperature of 283 K. Both the c-axis of hexagonal Mn5Ge3 and the magnetic easy axis are parallel to the Ge (100) surface. The millisecond-range flash epitaxy provides a new avenue for the fabrication of Ge-based spin-injectors fully compatible with CMOS technology., Comment: 10 pages, 5 figures, submitted to Appl. Phys. Lett

Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation temperature 155 K, where the net magnetic moment is strictly zero, the anomalous Hall conductivity is 6673 $\Omega^{-1}.m^{-1}$ and the coercivity exceeds 9 T. Molecular field modelling is used to determine the intra- and inter-sublattice exchange constants and from the spin-flop transition we infer the anisotropy of the electrically active sublattice to be 216 kJ/m$^3$ and predict the magnetic resonances frequencies. Exchange and anisotropy are comparable and hard-axis applied magnetic fields result in a tilting of the magnetic moments from their collinear ground state. Our analysis is applicable to collinear ferrimagnetic half-metal systems.

Exchange bias stems from the interaction between different magnetic phases and therefore it generally occurs in magnetic multilayers. Here we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature, but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to around 0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation., Comment: 14 pages, 5 figures

N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interstitial Te fraction decreases with increasing doping concentration and substitutional Te dimers become the dominant configuration as effective donors, leading to a non-saturating carrier concentration as well as to an insulator-to-metal transition. First-principle calculations reveal that the Te dimers possess the lowest formation energy and donate two electrons per dimer to the conduction band. These results provide novel insight into physics of deep impurities and lead to a possible solution for the ultra-high electron concentration needed in today's Si-based nanoelectronics., Comment: 26 pages, including the suppl information

Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed by ion implantation combined with pulsed-laser melting and incorporate Te-dopant concentrations several orders of magnitude above the solid solubility limit. With increasing Te concentration, the Te-hyperdoped layer changes from insulating to quasi-metallic behavior with a finite conductivity as the temperature tends to zero. The optical absorptance is found to increase monotonically with increasing Te concentration and extends well into the mid-infrared range. Temperature-dependent optoelectronic photoresponse unambiguously demonstrates that the extended infrared photoresponsivity from Te-hyperdoped Si p-n photodiodes is mediated by a Te intermediate band within the upper half of the Si band gap. This work contributes to pave the way toward establishing a Si-based broadband infrared photonic system operating at room temperature., Comment: 18 pages, 7 figures

The origin of nematicity, i.e., in-plane rotational symmetry breaking, and in particular the relative role played by spontaneous unidirectional ordering of spin, orbital, or charge degrees of freedom, is a challenging issue of magnetism, unconventional superconductivity, and quantum Hall effect systems, discussed in the context of doped semiconductor systems, such as Ga$_{1-x}$Mn$_x$As, Cu$_x$Bi$_2$Se$_3$, and Ga(Al)As/Al$_x$Ga$_{1-x}$As quantum wells, respectively. Here, guided by our experimental and theoretical results for In$_{1-x}$Fe$_x$As, we demonstrate that spinodal phase separation at the growth surface (that has a lower symmetry than the bulk) can lead to a quenched nematic order of alloy components, which then governs low temperature magnetic and magnetotransport properties, in particular the magnetoresistance anisotropy whose theory for the $C_{2v}$ symmetry group is advanced here. These findings, together with earlier data for Ga$_{1-x}$Mn$_x$As, show under which conditions anisotropic chemical phase separation accounts for the magnitude of transition temperature to a collective phase or merely breaks its rotational symmetry. We address the question to what extent the directional distribution of impurities or alloy components setting in during the growth may account for the observed nematicity in other classes of correlated systems., Comment: 16 pages and 11 figures