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[Objective] The oil and gas conveyed in transmission pipelines are highly flammable and explosive. During natural disasters,these pipelines are susceptible to technological accidents such as fire, explosion, and environmental pollution, i.e. Natural Hazards Triggering Technological Accidents(Natech). Rapid and accurate identification of weak segments of oil and gas pipelines in Natech events is particularly critical for disaster prevention and mitigation and emergency decision-making of pipelines. [Methods] Vulnerability is often employed as a metric to assess the safety risk level of complex systems. It can also be used to characterize the disparity in the safety levels of oil and gas pipeline during Natech events. Based on the characteristic parameters of oil and gas pipeline segmentation and initial natural disasters, as well as the functional model method commonly used in vulnerability assessment research, a vulnerability assessment model for oil and gas pipeline in Natech events was created. The design concept of a vulnerability assessment system for oil and gas pipeline segments in Natech events was proposed from the aspects of system architecture design, database design, and function module design, and the functions of the assessment system were realized based on the B/S architecture, ArcGIS technology, Editable Table technology, Localstorage technology, and Lay-UI component technology. [Results] The new assessment system was used in an oil pipeline project in South China. The practical results show that the vulnerability assessment system of oil and gas pipeline in Natech events can not only quickly solve the vulnerability assessment results to simplify the application process of the vulnerability assessment method, but also help users identify the root causes of vulnerability differences according to the data acquisition module, providing a clear solution for reducing the vulnerability level of pipeline segments, visually displaying the vulnerability assessment results, and effectively improving the production efficiency of the vulnerability zoning map. [Conclusion] The research results provide a reference for the prevention and control of Natech events of oil and gas pipelines, the identification of key vulnerable targets, and the development of information systems.

This paper firstly establishes the mathematical models of electric networks, natural gas networks and electrically coupled equipment, respectively, and models them comprehensively to form the basic architecture of an electrically coupled integrated energy system. Based on this, an integrated energy system planning model based on the ARIMA-LSTM model is proposed, and the objective function is optimized. Among them, the ARIMA model is used to fix the order of the objective function, and the LSTM model is used to train the backpropagation of the error of the objective function. Finally, the effectiveness of electrical cost planning and CO2 emission planning is verified by simulation experiments under two scenarios. The results show that scenario 1 saves $79,799.8 in electricity cost and reduces 11,612 t of CO2 emissions compared with scenario 2, which is not configured with an electrically coupled integrated energy system. The research in this paper provides new ideas and methods for the planning of electrically coupled integrated energy systems, which have certain academic value and application prospects.

Objective: To investigate the associations between parity (the number of offspring a female has borne) and cognitive function, depression, and chronic comorbidity in Western China. Methods: A total of 846 women aged 50–55 years were included in the current analysis. Cognitive status was measured using a 10‐item short portable mental status questionnaire (SPMSQ). Depressive symptoms were assessed using the 15‐item geriatric depression scale (GDS‐15). Other characteristics were self‐reported. The associations between parity and cognitive decline, depression, and chronic comorbidity were analyzed using univariable and multivariable models. Multivariable models were adjusted for age, ethnic group, occupation, marital status, educational level, lifestyle factors, and sleeping time. Results: Among the enrolled women, 26.71% were either childless or had one child, 47.40% had two children, 18.32% had three children, and 7.57% had ≥4 children. Compared to women with low parity, women with two or more children exhibited a higher risk of cognitive decline. Moreover, having four or more children was significantly associated with depression and chronic comorbidity. After adjusting covariates, women with three or more children exhibited a higher risk of cognitive decline than those with low parity. However, high parity was not significantly associated with depression or chronic comorbidity after adjustment for covariates. Conclusion: Our study showed that ≥3 children was associated with cognitive decline in women. Longitudinal studies are needed to evaluate this conclusion and to investigate the mechanisms involved. More importantly, families and societies should pay more attention to women's long‐term health outcomes related to fertility. Synopsis: This study explored the link between the number of children borne and cognitive function, depression, and chronic comorbidity in women aged 50 to 55 in Western China. It found that having three or more children was associated with a higher risk of cognitive decline. [ABSTRACT FROM AUTHOR]

The influence of external strain on the gate leakage current of AlGaN/GaN high-electron-mobility transistors was studied. The magnitude of the leakage current increased by 39% under 0.1% tensile strain but decreased by 23% under −0.1% compressive strain. The leakage current obeyed the Poole–Frenkel conduction mechanism, demonstrating a decrease/increase in the barrier height for electron emission from the trap state into the continuum dislocation state. Furthermore, the magnitude of critical reverse stressing voltage for the onset of degradation induced by the inverse piezoelectric effect became lower/higher under tensile/compressive strain compared with that of the initial state, which was attributed to the modification of the total stress in the film. In addition, using the transient current method, it was established that the detrapping time constant for the traps in the AlGaN barrier increased as a result of the tensile strain, which is ascribed to movement of the dislocation level away from the conduction band. [ABSTRACT FROM AUTHOR]

In this article, we present a transient temperature detection device for silicon carbide (SiC) Schottky barrier diodes (SBDs) based on thermal reflection theory. We constructed a thermal reflection temperature measurement device based on a 530-nm green laser. This device is more suitable for transient temperature measurement of SiC SBDs than previous thermal reflection equipment. The accuracy of temperature measurement by our device was confirmed by comparison with the results of infrared thermal imaging. The high temporal resolution characteristics of the thermal reflection technology allowed the detection of millisecond-level transient temperature changes in SiC SBDs. In addition, we investigated the complementarity of transient temperature change curves during heating and cooling processes, as well as the reasons for the differences between these curves. Finally, we used the structural function method combined with the Bayesian deconvolution algorithm to obtain the thermal resistance along the heat flow path of the device and validated the results using an established thermal resistance testing method. [ABSTRACT FROM AUTHOR]

Cysteine palmitoylation (S-palmitoylation) is a reversible post-translational modification that is installed by the DHHC family of palmitoyltransferases and is reversed by several acyl protein thioesterases.sup.1,2. Although thousands of human proteins are known to undergo S-palmitoylation, how this modification is regulated to modulate specific biological functions is poorly understood. Here we report that the key T helper 17 (T.sub.H17) cell differentiation stimulator, STAT3.sup.3,4, is subject to reversible S-palmitoylation on cysteine 108. DHHC7 palmitoylates STAT3 and promotes its membrane recruitment and phosphorylation. Acyl protein thioesterase 2 (APT2, also known as LYPLA2) depalmitoylates phosphorylated STAT3 (p-STAT3) and enables it to translocate to the nucleus. This palmitoylation-depalmitoylation cycle enhances STAT3 activation and promotes T.sub.H17 cell differentiation; perturbation of either palmitoylation or depalmitoylation negatively affects T.sub.H17 cell differentiation. Overactivation of T.sub.H17 cells is associated with several inflammatory diseases, including inflammatory bowel disease (IBD). In a mouse model, pharmacological inhibition of APT2 or knockout of Zdhhc7--which encodes DHHC7--relieves the symptoms of IBD. Our study reveals not only a potential therapeutic strategy for the treatment of IBD but also a model through which S-palmitoylation regulates cell signalling, which might be broadly applicable for understanding the signalling functions of numerous S-palmitoylation events. The dynamic and reversible S-palmitoylation of the transcription factor STAT3 enhances its activation and promotes the differentiation of T.sub.H17 cells., Author(s): Mingming Zhang [sup.1] [sup.2] , Lixing Zhou [sup.3] , Yuejie Xu [sup.4] , Min Yang [sup.2] , Yilai Xu [sup.2] , Garrison Paul Komaniecki [sup.2] , Tatsiana Kosciuk [sup.2] [...]

The gate defect of the ferroelectric HfO2-based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an effective method for the atomic-scale understanding of gate defects. However, the first-principles study on the defects of FeFET gate stacks, i.e., the metal/orthorhombic-Hf0.5Zr0.5O2/SiOx/Si structure, has not been reported so far. The key challenge is the construction of metal/orthorhombic-Hf0.5Zr0.5O2/SiOx/Si gate stack models. Here, the atomic structure and defect property of orthorhombic-Hf0.5Zr0.5O2/SiO2/Si gate stack are systematically studied by first-principles calculations. We use the Hf0.5Zr0.5O2(130) high-index crystal face as the orthorhombic ferroelectric layer and construct a robust atomic structure of the orthorhombic-Hf0.5Zr0.5O2/SiO2/Si gate stack without any gap states based on the electron counting rule. The calculated band offsets show that this gate structure is of type-I band alignment. Furthermore, the formation energies and charge transition levels (CTLs) of defects reveal that the oxygen vacancy defects are more favorable to form compared with other defects such as oxygen interstitial and Hf/Zr vacancy, and their CTLs are mainly localized near the Si conduction band minimum and valence band maximum, in agreement with the reported experimental results. The oxygen vacancy defects are responsible for charge trapping/de-trapping behavior in Si FeFET. This work provides an insight into gate defects and paves the way to carry out the first-principles study of ferroelectric HfO2-based Si FeFET. [ABSTRACT FROM AUTHOR]