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6. Abnormal Threshold Voltage Shift and Sub-channel Generation in Top-Gate InGaZnO TFTs under Backlight Negative Bias Illumination Stress

7. Impact of Variant Gate Insulator Fabrication Process on Reliability of Dual-Gate InGaZnO Thin-Film Transistors

11. Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation

15. Physical Mechanism of the Mechanical Bending of High-Performance Organic TFTs and the Effect of Atmospheric Factors

16. Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs

17. Asymmetric Electrode Structure Induces Dual-Channel Phenomenon Under Hot-Carrier Stress in Organic Thin-Film Transistors

18. Stably Saturated Output Current Characteristics and Hot-Carrier Reliability of a-InGaZnO Thin-Film Transistors With Source-Connected Field Plate

19. Suppressing Drain-Induced Barrier Lowering and Kink Effect in Low-Temperature Poly-Si TFTs Using a Partitioned Light Shield

25. Vertical Electric Field-Induced Abnormal Capacitance–Voltage Electrical Characteristics in a-InGaZnO TFTs

26. Impact of AC Stress in Low Temperature Polycrystalline Silicon Thin Film Transistors Produced With Different Excimer Laser Annealing Energies

27. Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors

28. Realizing forming-free characteristic by doping Ag into HfO2-based RRAM

30. Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation

32. Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

34. Improving a-InGaZnO TFTs Reliability by Optimizing Electrode Capping Structure Under Negative Bias Illumination Stress

35. Abnormal Hump Effect Induced by Hydrogen Diffusion During Self-Heating Stress in Top-Gate Amorphous InGaZnO TFTs

37. A Novel Structure to Reduce Degradation Under Mechanical Bending in Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide

38. Impact of Gate Size on Abnormal Current Rise Under an Electric Field in Organic Thin-Film Transistors

39. Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory

41. Inhibiting the Kink Effect and Hot-Carrier Stress Degradation Using Dual-Gate Low-Temperature Poly-Si TFTs

42. Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution

44. Formation of Hump Effect Due to Top-Gate Bias Stress in Organic Thin-Film Transistors

45. Abnormal Back Channel Leakage Under Large Drain Voltage in Short Channel Organic Thin-Film Transistors

46. Investigation of the Capacitance–Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment

50. Realizing forming-free characteristic by doping Ag into HfO2-based RRAM.

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