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Quantum memory, which maps photonic quantum information into a stationary medium and retrieves it at a chosen time, plays a vital role in the advancement of quantum information science. In particular, the scalability of a quantum memory is a central challenge for quantum network that can be overcome by using integrated devices. Quantum memory with an integrated device is highly appealing since it not only expands the number of memories to increase data rates, but also offers seamless compatibility with other on-chip devices and existing fiber network, enabling scalable and convenient applications. Over the past few decades, substantial efforts have been dedicated to achieving integrated quantum memory using rare earth ions doped solid-state materials, color centers, and atomic gases. These physical platforms are the primary candidates for such devices, where remarkable advantages have been demonstrated in achieving high-performance integrated quantum memory, paving the way for efficiently establishing robust and scalable quantum network with integrated quantum devices. In this paper, we aim to provide a comprehensive review of integrated quantum memory, encompassing its background and significance, advancement with bulky memory system, fabrication of integrated device, and its memory function considering various performance metrics. Additionally, we will address the challenges associated with integrated quantum memory and explore its potential applications. By analyzing the current state of the field, this review will make a valuable contribution by offering illustrative examples and providing helpful guidance for future achievements in practical integrated quantum memory. [ABSTRACT FROM AUTHOR]

A selective and sensitive ion-imprinted electrochemical sensor was proposed to detect cadmium ion (Cd2+) through differential pulse voltammetry (DPV) method based on core–shell mesoporous cadmium ion-imprinted polymers (IIP) and gold nanoparticles (AuNPs). The ion-imprinted polymers were prepared by the surface ion-imprinting technique using core–shell mesoporous silica as the carrier, Cd2+ as the template ion, and 3-mercaptopropyl trimethoxysilane (MPTMS) as the functional monomer. Due to the implementation of surface ion imprinting strategy on core–shell mesoporous structure, the polymer was endowed with excellent specific surface area and imprinted cavities, thus showing effective transmission and recognition ability for Cd2+. Furthermore, the introduction of gold nanoparticles synthesized through electrodeposition can accelerate the electron transfer rate and also increase the modified area of electrode for ion-imprinted polymers, resulting in higher sensitivity of the modified electrodes when ion-imprinted polymers was self-assembled on the surface of gold nanoparticle-modified electrode through Au–S. The linear range of the sensor varied from 1 to 100 µg L−1, with the minimum detection limit of 0.22 µg L−1. In addition, excellent anti-interference ability in Cd2+ detection was obtained in the presence of various interfering ions, and the sensor has also been proved to have good practicability in actual water sample detection, with the recovery rate in the range of 82.2% and 116.0% and the RSD is in the range of 0.33−7.30%. Therefore, this work is expected to provide an electrochemical sensor with excellent selectivity, good stability, and sensitivity for detecting trace Cd2+ in real-water samples. [ABSTRACT FROM AUTHOR]

The quality of active layer film is the key factor affecting the performance of perovskite solar cells. In this work, we incorporated CsPbI3 quantum dots (QDs) materials into the MAPbI3 perovskite precursor to form photoactive layer. On one hand, CsPbI3 QDs can be used as nucleation center to enhance the compactness of the perovskite film, and on the other hand, partially CsPbI3 QDs can be dissociated as anions and cations to passivate vacancy defects in the perovskite active layer. As a result, the film quality of the active layer was improved remarkably, thus exciton recombination was reduced, and carrier transfer increased accordingly. The devices based on doped-CsPbI3 QDs film had higher short circuit current, open circuit voltage and filling factor. Finally, the power conversion efficiency (PCE) was greatly enhanced from 14.85% to 17.04%. Furthermore, optimized devices also exhibited better stability. This work provides an effective strategy for the processing of high-quality perovskite films, which is of great value for the preparation and research of perovskite photoelectronic devices. [ABSTRACT FROM AUTHOR]