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Stacking ferroelectricity (SFE) has been discovered in a wide range of van der Waals materials and holds promise for applications, including photovoltaics and high-density memory devices. We show that the microscopic origin of out-of-plane stacking ferroelectric polarization can be generally understood as a consequence of nontrivial Berry phase borne out of an effective Su-Schrieffer-Heeger model description with broken sublattice symmetry, thus elucidating the quantum-geometric origin of polarization in the extremely non-periodic bilayer limit. Our theory applies to known stacking ferroelectrics such as bilayer transition-metal dichalcogenides in 3R and T$_{\rm d}$ phases, as well as general AB-stacked honeycomb bilayers with staggered sublattice potential. Our explanatory and self-consistent framework based on the quantum-geometric perspective establishes quantitative understanding of out-of-plane SFE materials beyond symmetry principles., Comment: 5 + 20 pages, 2 + 3 figures. Texts revised with Fig.2 updated. Comments are welcome

Based on symmetry arguments and the latest density functional results for the copper-substituted lead phosphate apatite (`LK-99'), we show that, at the non-interacting level, the material is an inversion-asymmetric Weyl semimetal. A pair of Weyl nodes with opposite chiralities emerge at different energies in the vicinity of the time-reversal-invariant $\Gamma$ and ${\rm A}$ points of the 3D Brillouin zone. These are characterized by unusual Weyl charges of $C_{\rm W} = \pm 2$ and are connected by two branches of topologically protected Fermi arc states on surfaces parallel to the principal $c$-axis. We further study important effects of the atomic spin-orbit coupling on the band structure and the electronic properties of the material in general. Possible implications of the proposed band topology on the strong correlation physics are also discussed., Comment: 4 + 3 pages, 3 figures. Comments are welcome

Recent theoretical and experimental studies point to a novel spin-triplet valley-singlet (STVS) superconducting phase in certain two-valley electron liquids, including rhombohedral trilayer graphene, Bernal bilayer graphene and ZrNCl. This fully gapped phase is exotic in that it combines into Cooper pairs same-spin electrons from valleys centered around the opposing corners of a hexagonal Brillouin zone, but is, nevertheless, topologically trivial. Here, we predict that upon stacking two layers of an STVS material with an angular twist, a novel chiral topological phase -- an $f \pm if'$-wave superconductor -- emerges in the vicinity of the `maximal' twist angle of 30$^{\circ}$ where the system becomes an extrinsic quasi-crystal with 12-fold tiling. The resulting composite is a non-Abelian topological superconductor (TSC) with an odd number of chiral Majorana modes at its edges and a single Majorana zero mode (MZM) localized in the vortex core. Through symmetry analysis and detailed microscopic modelling based on a novel quasi-crystal band structure technique, we demonstrate that the non-Abelian TSC forms when the isolated Fermi pockets coalesce into a single connected Fermi surface around the center of the moir\'{e} Brillouin zone and is stable over a wide range of electron density. We further discuss how the energetics leading to the $f \pm if'$-wave phase results in anomalous $\pi$-periodic inter-layer Josephson effect, which can serve as a distinctive signature of the chiral phase. Distinct from the valley-preserving moir\'{e} physics in small-angle twisted graphene, our results establish the large-angle moir\'{e} physics arising near maximal twist as a new avenue toward intrinsic TSC with non-Abelian excitations., Comment: 12 + 19 pages, 5 + 6 figures. Texts and supplementary information(SI) revised, with discussions added to highlight the connection between non-Abelian topological superconductivity and a new type of large-angle moire physics. Detailed analysis on other pairing channels presented in revised SI. Comments are welcome

Stacking order in van der Waals materials determines the coupling between atomic layers and is therefore key to the materials' properties. By exploring different stacking orders, many novel physical phenomena have been realized in artificial vdW stacks. Recently, 2D ferroelectricity has been observed in zero-degree aligned hBN and graphene-hBN heterostructures, holding promise in a range of electronic applications. In those artificial stacks, however, the single domain size is limited by the stacking-angle misalignment to about 0.1 to 1 $\mu$m, which is incompatible with most optical or optoelectronic applications. Here we show MoS$_2$ in the rhombohedral phase can host a homogeneous spontaneous polarization throughout few-$\mu$m-sized exfoliated flakes, as it is a natural crystal requiring no stacking and is, therefore free of misalignment. Utilizing this homogeneous polarization and its induced depolarization field (DEP), we build a graphene-MoS$_2$ based photovoltaic device with high efficiency. The few-layer MoS$_2$ is thinner than most oxide-based ferroelectric films, which allows us to maximize the DEP and study its impact at the atomically thin limit, while the highly uniform polarization achievable in the commensurate crystal enables a tangible path for up-scaling. The external quantum efficiency of our device is up to 16% at room temperature, over one order larger than the highest efficiency observed in bulk photovoltaic devices, owing to the reduced screening in graphene, the exciton-enhanced light-matter interaction, and the ultrafast interlayer relaxation in MoS$_2$. In view of the wide range of bandgap energy in other TMDs, our findings make rhombohedral TMDs a promising and versatile candidate for applications such as energy-efficient photo-detection with high speed and programmable polarity., Comment: 20 pages, 6 figures

We predict that in a twisted homobilayer of transition-metal dichalcogenide MoS$_2$, spin-orbit coupling in the conduction band states from $\pm K$ valleys can give rise to moir\'{e} flat bands with nonzero Chern numbers in each valley. The nontrivial band topology originates from a unique combination of angular twist and local mirror symmetry breaking in each individual layer, which results in unusual skyrmionic spin textures in momentum space with skyrmion number $\mathcal{S} = \pm 2$. Our Hartree-Fock analysis further suggests that density-density interactions generically drive the system at $1/2$-filling into a valley-polarized state, which realizes a correlated quantum anomalous Hall state with Chern number $\mathcal{C} = \pm 2$. Effects of displacement fields are discussed with comparison to nontrivial topology from layer-pseudospin magnetic fields., Comment: 4 + 10 pages, 4 + 3 figures

Recent studies have shown that moir\'{e} flat bands in a twisted bilayer graphene(TBG) can acquire nontrivial Berry curvatures when aligned with hexagonal boron nitride substrate [1, 2], which can be manifested as a correlated Chern insulator near the 3/4 filling [3, 4]. In this work, we show that the large Berry curvatures in the moir\'{e} bands lead to strong nonlinear Hall(NLH) effect in a strained TBG with general filling factors. Under a weak uniaxial strain $\sim 0.1\%$, the Berry curvature dipole which characterizes the nonlinear Hall response can be as large as $\sim$ 200{\AA}, exceeding the values of all previously known nonlinear Hall materials [5-14] by two orders of magnitude. The dependence of the giant NLH effect as a function of electric gating, strain and twist angle is further investigated systematically. Importantly, we point out that the giant NLH effect appears generically for twist angle near the magic angle due to the strong susceptibility of nearly flat moir\'{e} bands to symmetry breaking induced by strains. Our results establish TBG as a practical platform for tunable NLH effect and novel transport phenomena driven by nontrivial Berry phases., Comment: 5 pages, 3 figures. Comments are welcome

Recent experiments reported gate-induced superconductivity in the monolayer 1T$'$-WTe$_2$ which is a two-dimensional topological insulator in its normal state [1, 2]. The in-plane upper critical field $B_{c2}$ is found to exceed the conventional Pauli paramagnetic limit $B_p$ by 1-3 times. The enhancement cannot be explained by conventional spin-orbit coupling which vanishes due to inversion symmetry. In this work, we unveil some distinctive superconducting properties of centrosymmetric 1T$'$-WTe$_2$ which arise from the coupling of spin, momentum and band parity degrees of freedom. As a result of this spin-orbit-parity coupling: (i) there is a first-order superconductor-metal transition at $B_{c2}$ much higher than the Pauli paramagnetic limit $B_p$, (ii) spin-susceptibility is anisotropic with respect to in-plane directions and results in anisotropic $B_{c2}$ and (iii) the $B_{c2}$ exhibits a strong gate dependence as the spin-orbit-parity coupling is significant only near the topological band crossing points. The importance of SOPC on the topologically nontrivial inter-orbital pairing phase is also discussed. Our theory generally applies to centrosymmetric materials with topological band inversions., Comment: 5 pages, 4 figures. Comments are welcome

An external magnetic field is needed to drive a nanowire in proximity to an s-wave superconductor into a topological regime which supports Majorana end states. However, a magnetic field generally suppresses the proximity superconducting gap induced on the nanowire. In recent experiments using InSb nanowires coupled to Al, the induced proximity gap vanishes at magnetic fields B~1T. This results in a small superconducting gap on the wire and a narrow topological regime which is proportional to the strength of the magnetic field. In this work, we show that by placing nanowires in proximity to recently discovered Ising superconductors such as the atomically thin transition-metal dichalcogenide(TMD) NbSe2, the topological superconducting gap on the wire can maintain at a large magnetic field as strong as B~10T. This robust topological superconducting gap is induced by the unique equal-spin triplet Cooper pairs of the parent Ising superconductor. The strong magnetic field allows a topological regime ten times larger than those in InSb wires coupled to Al. Our work establishes a realistic platform for building robust Majorana-based qubits., Comment: 6 pages, 4 figures. Comments are welcome

Recently, signatures of nonlinear Hall effects induced by Berry-curvature dipoles have been found in atomically thin 1T'/Td-WTe$_2$. In this work, we show that in strained polar transition-metal dichalcogenides(TMDs) with 2H-structures, Berry-curvature dipoles created by spin degrees of freedom lead to strong nonlinear Hall effects. Under an easily accessible uniaxial strain of order 0.2%, strong nonlinear Hall signals, characterized by a Berry-curvature dipole on the order of 1{\AA}, arise in electron-doped polar TMDs such as MoSSe, and this is easily detectable experimentally. Moreover, the magnitude and sign of the nonlinear Hall current can be easily tuned by electric gating and strain. These properties can be used to distinguish nonlinear Hall effects from classical mechanisms such as ratchet effects. Importantly, our system provides a potential scheme for building electrically switchable energy-harvesting rectifiers., Comment: 16 pages, 7 figures. Comments are welcome

Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons from different valleys. Such valley Hall effects have been achieved only by extrinsic means, such as substrate coupling, dual gating, and light illuminating. Here, we report the first observation of intrinsic valley Hall transport without any extrinsic symmetry breaking in the non-centrosymmetric monolayer and trilayer MoS2, evidenced by considerable nonlocal resistance that scales cubically with local resistance. Such a hallmark survives even at room temperature with a valley diffusion length at micron scale. By contrast, no valley Hall signal is observed in the centrosymmetric bilayer MoS2. Our work elucidates the topological quantum origin of valley Hall effects and marks a significant step towards the purely electrical control of valley degree of freedom in topological valleytronics., Comment: 22 pages, 4 figures

In this work, we consider a 3D cubic optical lattice composed of coupled 1D wires with 1D spin-orbit coupling. When the s-wave pairing is induced through Feshbach resonance, the system becomes a topological superfluid with ring nodes, which are the ring nodal degeneracies in the bulk, and supports a large number of surface Majorana zero energy modes. The large number of surface Majorana modes remain at zero energy even in the presence of disorder due to the protection from a chiral symmetry. When the chiral symmetry is broken, the system becomes a Weyl topological superfluid with Majorana arcs. With 3D spin-orbit coupling, the Weyl superfluid becomes a novel gapless phase with spiral Majorana modes on the surface. The spatial resolved radio frequency spectroscopy is suggested to detect this novel nodal ring topological superfluid phase., Comment: 5 pages, 4 figures. Comments are welcome

In transition-metal dichalcogenides, electrons in the K-valleys can experience both Ising and Rashba spin-orbit couplings. In this work, we show that the coexistence of Ising and Rashba spin-orbit couplings leads to a special type of valley Hall effect, which we call spin-orbit coupling induced valley Hall effect. Importantly, near the conduction band edge, the valley-dependent Berry curvatures generated by spin-orbit couplings are highly tunable by external gates and dominate over the intrinsic Berry curvatures originating from orbital degrees of freedom under accessible experimental conditions. We show that the spin-orbit coupling induced valley Hall effect is manifested in the gate dependence of the valley Hall conductivity, which can be detected by Kerr effect experiments., Comment: 5 pages, 3 figures. Comments are welcome

In this work, we predict the emergence of the valley Edelstein Effect (VEE), which is an electric-field-induced spin polarization effect, in gated monolayer transition metal dichalcogenides (MTMDs). We found an unconventional valley-dependent response in which the spin-polarization is parallel to the applied electric field with opposite spin-polarization generated by opposite valleys. This is in sharp contrast to the conventional Edelstein effect in which the induced spin-polarization is perpendicular to the applied electric field. We identify the origin of VEE as combined effects of conventional Edelstein effect and valley-dependent Berry curvatures induced by coexisting Rashba and Ising SOCs in gated MTMDs. Experimental schemes to detect the VEE are also considered., Comment: 5+7 pages, 5+4 figures ; v3 a detection way of the VEE added

In this work, we review the results of several recent works on the experimental and theoretical studies of monolayer superconducting transition metal dichalcogenides (TMD) such as superconducting MoS2 and NbSe2. We show how the strong Ising spin-orbit coupling (SOC), a special type of SOC which pins electron spins to out-of-plane directions, can affect the superconducting properties of the materials. Particularly, we discuss how the in-plane upper critical fields of the materials can be strongly enhanced by Ising SOC and how TMD materials can be used to engineer topological superconductors and nodal topological superconductors which support Majorana fermions., Comment: 9 pages, 6 figures, an invited paper to Association of Asia Pacific Physical Societies Bulletin. All comments are welcome

Recently, Ising superconductors which possess in-plane upper critical fields much larger than the Pauli limit field are under intense experimental study. Many monolayer or few layer transition metal dichalcogenides are shown to be Ising superconductors. In this work, we show that in a wide range of experimentally accessible regimes where the in-plane magnetic field is higher than the Pauli limit field but lower than $H_{c2}$, a 2H-structure monolayer NbSe$_2$ or simiarly TaS$_2$ becomes a nodal topological superconductor. The bulk nodal points appear on the $\Gamma- M$ lines of the Brillouin zone where the Ising SOC vanishes. The nodal points are connected by Majorana flat bands, similar to the Weyl points being connected by surface Fermi arcs in Weyl semimetals. The Majorana flat bands are associated with a large number of zero energy Majorana fermion edge modes which induce spin-triplet Cooper pairs. This work demonstrates an experimentally feasible way to realise Majorana fermions in nodal topological superconductor, without any fining tuning of experimental parameters., Comment: 5 pages, 4 figures, plus supplementary material. Comments are welcome

In monolayer transition metal dichalcogenides (TMDs), electrons in opposite $K$ valleys are subject to opposite effective Zeeman fields, which are referred to as Ising spin-orbit coupling (SOC) fields. The Ising SOC, originated from in-plane mirror symmetry breaking pins the electron spins in out-of-plane directions, and results in the newly discovered Ising superconducting states with strongly enhanced upper critical fields. In this work, we show that the Ising SOC generates equal-spin triplet Cooper pairs with spin polarization in the in-plane directions. Importantly, the spin-triplet Cooper pairs can induce superconducting pairings in a half-metal wire placed on top of the TMD and result in a topological superconductor with Majorana end states. Direct ways to detect equal-spin triplet Cooper pairs and the differences between Ising superconductors and Rashba superconductors are discussed., Comment: 5 pages, 3 figures. Comments are welcome