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Benefitting from the mature, cost‐effective, and scalable manufacturing capabilities of complementary metal‐oxide‐semiconductor (CMOS) technology, silicon photonics has facilitated the seamless and monolithic integration of diverse functionalities, including optical sources, modulators, and photodetectors. Microresonators can generate multiple coherent optical frequency comb lines and serve as optical sources. However, at the telecom band, silicon suffers from two‐photon absorption and free‐carrier absorption, which severely hampers the realization of microcombs from a single silicon chip at telecom wavelengths until now. In this paper, a novel approach is presented and demonstrated with near‐infrared dual‐band frequency combs from a multimode silicon resonator. With a single pumping configuration, dual‐band combs are generated from the interaction between the pump and Raman Stokes fields by involving two different optical mode families but with similar group velocities. It is observed that the pump power required to generate dual‐band combs is as low as 0.7 mW. The work in bringing telecom microcombs to the silicon platform will advance silicon photonics for the next generation of monolithically integrated technology based on a single silicon chip, enabling new possibilities for further exploring silicon photonics‐based applications in optical telecommunications, sensing, and quantum metrology in the telecom band using a monolithic single silicon chip. [ABSTRACT FROM AUTHOR]

Integrated Raman lasers have been well explored using silica and silicon platforms for decades. A well‐known equation with negligible nonlinear losses is employed for predictions of Raman lasing threshold powers in critically coupled cavities. However, nonlinear losses are known to be highly detrimental to silicon devices. Herein, for the first time, including the effects of linear loss, nonlinear losses, and cavity design, a new general equation that predicts the onset of Raman lasing in a cavity is derived and validated experimentally. Generally, a cavity with a small effective area, a short length, and high quality factors (Qs) at both pump and Stokes wavelengths can lase at relatively low pump power. This theory is verified by the experimental results with sub‐milliwatt threshold powers in 2.8 mm long multimode cavities with different Qs at different pump wavelengths. The derived Raman gain coefficients from the measurements follow the scaling rules of Raman gain. This work advances the understanding of Raman lasing in high‐Q multimode cavities. It also shows that Raman lasing at O/S‐band is possible in racetrack resonators without needing any reverse bias and the broad operation wavelength is promising for single‐chip silicon devices operating at all communication bands. [ABSTRACT FROM AUTHOR]