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Topological Dirac nodal-line semimetals host topologically nontrivial electronic structure with nodal-line crossings around the Fermi level, which could affect the photocarrier dynamics and lead to novel relaxation mechanisms. Herein, by using time- and angle-resolved photoemission spectroscopy, we reveal the previously-inaccessible linear dispersions of the bulk conduction bands above the Fermi level in a Dirac nodal-line semimetal PtSn$_4$, as well as the momentum and temporal evolution of the gapless nodal lines. A surprisingly ultrafast relaxation dynamics within a few hundred femtoseconds is revealed for photoexcited carriers in the nodal line. Theoretical calculations suggest that such ultrafast carrier relaxation is attributed to the multichannel scatterings among the complex metallic bands of PtSn$_4$ via electron-phonon coupling. In addition, a unique dynamic relaxation mechanism contributed by the highly anisotropic Dirac nodal-line electronic structure is also identified. Our work provides a comprehensive understanding of the ultrafast carrier dynamics in a Dirac nodal-line semimetal.

Revealing the fine electronic structure is critical for understanding the underlying physics of low-dimensional materials. Angle-resolved photoemission spectroscopy (ARPES) is a powerful experimental technique for mapping out the experimental electronic structure. By reducing the photon energy (e.g. to 6 eV) using laser sources, a greatly improved momentum resolution can be achieved, thereby providing opportunities for ``zooming in'' the fine electronic structure and even revealing the previously unresolvable bands near the Brillouin zone center. Here, by using quasi-one-dimensional material CuTe as an example, we demonstrate the unique capability of laser-based ARPES in revealing the fine electronic structures of ``hidden'' charge density wave induced shadow bands near the Brillouin zone center, which are previously unresolvable using synchrotron sources. The observation of the shadow bands reveals the CDW phase from the aspect of band folding, and the unpredicted CDW band hybridization strongly modifies the electronic structure and Fermi surface, which suggests that such hybridization must be taken into account for studying the CDW transition. Moreover, the ultrafast non-equilibrium carrier dynamics are captured by time-resolved ARPES, revealing the relaxation dynamics through electron-phonon scattering. Our work demonstrates the advantages of laser-based ARPES in zooming in the fine electronic structures, as well as capturing the ultrafast dynamics of low-dimensional materials., Comment: 8 pages, 5 figures

Time-periodic light field can dress the electronic states and lead to light-induced emergent properties in quantum materials. While below-gap pumping is regarded favorable for Floquet engineering, so far direct experimental evidence of momentum-resolved band renormalization still remains missing. Here, we report experimental evidence of light-induced band renormalization in black phosphorus by pumping at photon energy of 160 meV which is far below the band gap, and the distinction between below-gap pumping and near-resonance pumping is revealed. Our work demonstrates light-induced band engineering upon below-gap pumping, and provides insights for extending Floquet engineering to more quantum materials.

Van der Waals superlattices are important for tailoring the electronic structures and properties of layered materials. Here we report the superconducting properties and electronic structure of a natural van der Waals superlattice (PbSe)$_{1.14}$NbSe$_2$. Anisotropic superconductivity with a transition temperature $T_c$ = 5.6 $\pm$ 0.1 K, which is higher than monolayer NbSe$_2$, is revealed by transport measurements on high-quality samples. Angle-resolved photoemission spectroscopy (ARPES) measurements reveal the two-dimensional electronic structure and a charge transfer of 0.43 electrons per NbSe$_2$ unit cell from the blocking PbSe layer. In addition, polarization-dependent ARPES measurements reveal a significant circular dichroism with opposite contrast at K and K' valleys, suggesting a significant spin-orbital coupling and distinct orbital angular momentum. Our work suggests natural van der Waals superlattice as an effective pathway for achieving intriguing properties distinct from both the bulk and monolayer samples., Comment: 8 pages, 4 figures

Distinguishing and controlling the extent of Mottness is important for materials where the energy scales of the onsite Coulomb repulsion U and the bandwidth W are comparable. Here we report the ultrafast electronic dynamics of 1T-TaS$_2$ by ultrafast time- and angle-resolved photoemission spectroscopy. A comparison of the electron dynamics for the newly-discovered intermediate phase (I-phase) as well as the low-temperature commensurate charge density wave (C-CDW) phase shows distinctive dynamics. While the I-phase is characterized by an instantaneous response and nearly time-resolution-limited fast relaxation (~200 fs), the C-CDW phase shows a delayed response and a slower relaxation (a few ps). Such distinctive dynamics refect the different relaxation mechanisms and provide nonequilibrium signatures to distinguish the Mott insulating I-phase from the C-CDW band insulating phase. Moreover, a light-induced bandwidth reduction is observed in the C-CDW phase, pushing it toward the Mott insulating phase. Our work demonstrates the power of ultrafast light-matter interaction in both distinguishing and controlling the extent of Mottness on the ultrafast timescale.

Time-periodic light field has emerged as a control knob for manipulating quantum states in solid-state materials, cold atoms and photonic systems via hybridization with photon-dressed Floquet states in the strong coupling limit, dubbed as Floquet engineering. Such interaction leads to tailored properties of quantum materials, for example, modifications of the topological properties of Dirac materials and modulation of the optical response. Despite extensive research interests over the past decade, there is no experimental evidence of momentum-resolved Floquet band engineering of semiconductors, which is a crucial step to extend Floquet engineering to a wide range of solid-state materials. Here, based on time- and angle-resolved photoemission spectroscopy measurements, we report experimental signatures of Floquet band engineering in a model semiconductor - black phosphorus. Upon near-resonance pumping at photon energy of 340 to 440 meV, a strong band renormalization is observed near the band edges. In particular, light-induced dynamical gap opening is resolved at the resonance points, which emerges simultaneously with the Floquet sidebands. Moreover, the band renormalization shows a strong selection rule favoring pump polarization along the armchair direction, suggesting pseudospin selectivity for the Floquet band engineering as enforced by the lattice symmetry. Our work demonstrates pseudospin-selective Floquet band engineering in black phosphorus, and provides important guiding principles for Floquet engineering of semiconductors.

Developing a widely tunable vacuum ultraviolet (VUV) source with sub-100 femtoseconds (fs) pulse duration is critical for ultrafast pump-probe techniques such as time- and angle-resolved photoemission spectroscopy (TrARPES). While a tunable probe source with photon energy of 5.3 - 7.0 eV has been recently implemented for TrARPES by using a KBe$_2$BO$_3$F$_2$ (KBBF) device, the time resolution of 280 - 320 fs is still not ideal, which is mainly limited by the duration of the VUV probe pulse generated by the KBBF device. Here, by designing a new KBBF device which is specially optimized for fs applications, an optimum pulse duration of 55 fs is obtained after systematic diagnostics and optimization. More importantly, a high time resolution of 81 - 95 fs is achieved for TrARPES measurements covering the probe photon energy range of 5.3 - 7.0 eV, making it particularly useful for investigating the ultrafast dynamics of quantum materials. Our work extends the application of KBBF device to ultrafast pump-probe techniques with the advantages of both widely tunable VUV source and ultimate time resolution., Comment: 8 pages, 4 figures

Revealing the ultrafast dynamics of three-dimensional (3D) Dirac fermions upon photoexcitation is critical for both fundamental science and device applications. So far, how the cooling of 3D Dirac fermions differs from that of two-dimensional (2D) Dirac fermions and whether there is population inversion are fundamental questions that remain to be answered. Here we reveal the ultrafast dynamics of Dirac fermions in a model 3D Dirac semimetal Cd$_3$As$_2$ by ultrafast time- and angle-resolved photoemission spectroscopy (TrARPES) with a tunable probe photon energy from 5.3 - 6.9 eV. The energy- and momentum-resolved relaxation rate shows a linear dependence on the energy, suggesting Dirac fermion cooling through intraband relaxation. Moreover, a population inversion is reported based on the observation of accumulated photoexcited carriers in the conduction band with a lifetime of $\tau_n$ = 3.0 ps. Our work provides direct experimental evidence for a long-lived population inversion in a 3D Dirac semimetal, which is in contrast to 2D graphene where the interband relaxation occurs on a much faster timescale.

Time- and angle-resolved photoemission spectroscopy (TrARPES) is a powerful technique for capturing the ultrafast dynamics of charge carriers and revealing photo-induced phase transitions in quantum materials. However, the lack of widely tunable probe photon energy, which is critical for accessing the dispersions at different out-of-plane momentum $k_z$ in TrARPES measurements, has hindered the ultrafast dynamics investigation of 3D quantum materials such as Dirac or Weyl semimetals. Here we report the development of a TrARPES system with a highly tunable probe photon energy from 5.3 to 7.0 eV. The tunable probe photon energy is generated by the fourth harmonic generation of a tunable wavelength femtosecond laser source by combining a $\beta$-BaB$_2$O$_4$ (BBO) crystal and a KBe$_2$BO$_3$F$_2$ (KBBF) crystal. High energy resolution of 29 - 48 meV and time resolution of 280 - 320 fs are demonstrated on 3D topological materials ZrTe$_5$ and Sb$_2$Te$_3$. Our work opens up new opportunities for exploring ultrafast dynamics in 3D quantum materials.

MnBi$_8$Te$_{13}$ is an intrinsic ferromagnetic (FM) topological insulator with different complex surface terminations. Resolving the electronic structures of different termination surfaces and manipulation of the electronic state are important. Here, by using micrometer spot time- and angle-resolved photoemission spectroscopy ($\mu$-TrARPES), we resolve the electronic structures and reveal the ultrafast dynamics upon photoexcitation. Photoinduced filling of the surface state hybridization gap is observed for the Bi$_2$Te$_3$ quintuple layer directly above MnBi$_2$Te$_4$ accompanied by a nontrivial shift of the surface state, suggesting light-tunable interlayer interaction. Relaxation of photoexcited electrons and holes is observed within 1-2 ps. Our work reveals photoexcitation as a potential control knob for tailoring the interlayer interaction and surface state of MnBi$_8$Te$_{13}$.