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The morphology of the surfaces of single-crystal germanium, corresponding to the crystallographic planes {111}, {100}, {110}, after laser heat treatment was investigated. We used repetitively pulsed radiation of a nanosecond UV laser (wavelength is 355 nm, duration is 10 ns, energy density∼0.5 – 1.3 J/cm2) of pre-threshold intensity. It was confirmed that on the {111} plane, as a result of impact to radiation, etching pits appear, which are identical to those, that appear during selective chemical etching. It was first discovered, that on the {100} plane etching results, having a crystallographic nature, can also appear. On the {110} plane, traces of the impact of laser radiation were also observed. However, the crystallographic orientation of the plane in the traces of impact to radiation did not manifest itself explicitly. [ABSTRACT FROM AUTHOR]