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Your search keyword '"Zhao, C.Z."' showing total 122 results
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122 results on '"Zhao, C.Z."'

17. Hydrogen induced positive charge generation in gate oxides

Author

Zhang, J.F., Zhao, C.Z., Groeseneken, G., Degraeve, R., Ellis, J.N., and Beech, C.D.

Subjects
Field-effect transistors -- Research, Metal oxide semiconductors -- Research, Physics
Abstract

A new study investigates the H2-anneal-induced positive charge generation in gate oxides made using a submicron complementary metal-oxide-semiconductor process.

Published
2001

18. Interface state generation after hold injection

Author

Zhao, C.Z., Zhang, J.F., Groeseneken, G., Degraeve, R., Ellis, J.N., and Beech, C.D.

Subjects
Surface chemistry -- Research, Physics
Abstract

The interface state generation after hole injection is investigated, and two independent processes were found to cause generation, including H2 cracking.

Published
2001

22. On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks

Author

Chang, M.H., Zhao, C.Z., Ji, Z., Zhang, J.F., Groeseneken, G., Pantisano, L., De Gendt, S., and Heyns, M.M.

Subjects
Dielectrics -- Evaluation, Gates (Electronics) -- Evaluation, Hafnium -- Electric properties, Physics
Abstract

The activation of process-induced positive charging (PIPC) precursors after device fabrication is examined and it is shown that the loss of certain species from the gate edge through lateral diffusion is responsible for it. That studies have shown that water- and chlorine-related species have played a major role, the reactivation of the passivation precursor is examined and the results have shown that it is not thermally accelerated.

Published
2009

23. Dielectric relaxation of lanthanum doped zirconium oxide

Author

Zhao, C.Z., Taylor, S., Werner, M., Chalker, P.R., Murray, R.T., Gaskell, J.M., and Jones, A.C.

Subjects
Dielectric relaxation -- Analysis, Lanthanum -- Electric properties, Semiconductor doping -- Analysis, Zirconium -- Electric properties, Physics
Abstract

Lanthanum doped zirconium oxide films are analyzed and the highest dielectric constant is obtained for a lightly doped film. The dielectric relaxation is shown to be related to the size of crystal grains formed during annealing, which is dependent on the doping level.

Published
2009

25. Analysis of the kinetics for interface state generation following hole injection

Author

Zhang, J.F., Zhao, C.Z., Groeseneken, G., and Degraeve, R.

Subjects
Hydrogen -- Research, Dynamics -- Research, Physics
Abstract

The effects of various stressing parameters on the kinetics, including the oxide field strength during and posthole injection, the stress time, the energy and current of hot holes are investigated. Hydrogen emission and detrapping of a certain type of hole traps as the rate limiting processes are finally proposed, and the relative importance of these two is addressed.

Published
2003

45. Identification of a novel HLA‐DRB1 allele (HLA‐DRB1*111902*)

Author

Li, D., primary, Gao, H.F., additional, Liu, X., additional, Jiang, D., additional, Li, Z., additional, Liu, Y.H., additional, Jiang, Y.Z., additional, Li, L., additional, Lan, G.X., additional, Zhao, C.Z., additional, Guo, T., additional, Cai, B., additional, Wang, D., additional, Sun, G.Y., additional, Zhang, D., additional, and Lu, D.P., additional

Published
2005
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