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In the era of big data, the necessity for in-memory computing has become increasingly pressing, rendering memristors a crucial component in next-generation computing architectures. The self-rectifying memristor (SRM), in particular, has emerged as a promising solution to mitigate the sneak path current issue in crossbar architectures. In this work, a Pt/HfO2/WO3−x/TiN SRM structure is reported with an impressive rectification ratio above 106. To elucidate the underlying mechanisms, we systematically investigate the impact of the WO3−x resistive layer thickness modulation on the device's conductive behavior. Our findings reveal that the abundant traps in the WO3−x resistive layer and the excellent insulating property of HfO2 synergistically suppress negative current while promoting positive current. According to the simulation, the crossbar array based on the proposed SRMs can realize an array scale of over 21 Gbit. Furthermore, artificial synapses fabricated using these SRMs demonstrate a remarkable linearity of 0.9973. In conclusion, our results underscore the great potential of these SRMs for the ultra-large-scale integration of neuromorphic hardware, providing a guide for future ultra-high-energy efficiency hardware with minimal circuit overhead. [ABSTRACT FROM AUTHOR]

The demand for high‐performance X‐ray detectors leads to material innovation for efficient photoelectric conversion and carrier transfer. However, current X‐ray detectors are often susceptible to chemical and irradiation instability, complex fabrication processes, hazardous components, and difficult compatibility. Here, we investigate a two‐dimensional (2D) material with a relatively low atomic number, Ti3C2Tx MXenes, and single crystal silicon for X‐ray detection and single‐pixel imaging (SPI). We fabricate a Ti3C2Tx MXene/Si X‐ray detector demonstrating remarkable optoelectronic performance. This detector exhibits a sensitivity of 1.2 × 107 μC Gyair−1 cm−2, a fast response speed with a rise time of 31 μs, and an incredibly low detection limit of 2.85 nGyair s−1. These superior performances are attributed to the unique charge coupling behavior under X‐ray irradiation via intrinsic polaron formation. The device remains stable even after 50 continuous hours of high‐dose X‐ray irradiation. Our device fabrication process is compatible with silicon‐based semiconductor technology. Our work suggests new directions for eco‐friendly X‐ray detectors and low‐radiation imaging system. [ABSTRACT FROM AUTHOR]

Currently, solar heating systems face several challenges in winter cold conditions, including low heat collection temperature, high heat collection loss, low thermal storage density, and unstable storage temperature, making it difficult to meet heating quality requirements. Taking the heating of a driving school building in the suburbs of Baiyin, Gansu as a case study, and using typical meteorological data for the local heating season, we simulated the indoor thermal load of the building using DEST software. We then designed a focused solar heating system with phase change thermal storage, coupling focused solar thermal technology with latent heat storage technology. The thermal storage performance of Ba(OH)2-8H2O composite phase change material in an oil-sealed environment was verified. Mathematical models of the major components of the focused solar heating system with phase change storage were developed, along with a TRNSYS system model. An objective function was established using the annualized cost method, with the area of the collector and the mass of PCM as variables. Optimization was performed using Genopt software, invoking the Hooke-Jeeves algorithm to optimize the heat collection area S and mass m of phase change material in the focused solar heating system. The optimized results showed a collector area of 4.11 m2, and a PCM mass of 130 kg, resulting in a 10.04% improvement in the solar assurance rate. Over the system's entire lifecycle, the cost decreased by 1025 RMB, and the carbon emission reduction increased from 10,838 to 16,101 kg. [ABSTRACT FROM AUTHOR]