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Controllably fabricating low-dimensional systems and unraveling their exotic states at the atomic scale is a pivotal step for the construction of quantum functional materials with emergent states. Here, by utilizing the elaborated molecular beam epitaxy growth, we obtain various FexSey phases beyond the single-layer FeSe/SrTiO3 films. A synthetic strategy of lowering substrate temperature with superfluous Se annealing is implemented to achieve various stoichiometric FeSe-derived phases, ranging from 1:1 to 5:8. The phase transitions and electronic structure of these FexSey phases are systematically characterized by atomic resolution scanning tunneling microscopy measurements. We observe the long-ranged antiferromagnetic order of the Fe4Se5 phase by spin-polarized signals with striped patterns, which is also verified by their magnetic response of phase shift between adjacent domains. The electronic doping effect in insulating Fe4Se5 and the kagome effect in metallic Fe5Se8 are also discussed, where the kagome lattice is a promising structure to manifest both spin frustration of d electrons in a quantum-spin-liquid phase and correlated topological states with flat-band physics. Our study provides promising opportunities for constructing artificial superstructures with tunable building blocks, which is helpful for understanding the emergent quantum states and their correlation with competing orders in the FeSe-based family. [ABSTRACT FROM AUTHOR]

Correlated states have emerged in low-dimensional systems owing to enhanced Coulomb interactions. Elucidating these states requires atomic-scale characterization and delicate control capabilities. Herein, spectroscopic imaging-scanning tunneling microscopy was employed to investigate the correlated states residing in 1D electrons of the monolayer and bilayer MoSe2 mirror twin boundary (MTB). The Coulomb energies, determined by the wire length, drive the MTB into two types of ground states with distinct respective out-of-phase and in-phase charge orders. The two ground states can be reversibly converted through a metastable zero-energy state with in situ voltage pulses, which tune the electron filling of the MTB via a polaronic process, substantiated by first-principles calculations. Our Hubbard model calculation with an exact diagonalization method reveals the ground states as correlated insulators from an on-site U-originated Coulomb interaction, dubbed the Hubbard-type Coulomb blockade effect. Our study lays a foundation for understanding and tailoring correlated physics in complex systems. [ABSTRACT FROM AUTHOR]

Intrinsic antiferromagnetism in van der Waals (vdW) monolayer (ML) crystals enriches our understanding of two-dimensional (2D) magnetic orders and presents several advantages over ferromagnetism in spintronic applications. However, studies of 2D intrinsic antiferromagnetism are sparse, owing to the lack of net magnetisation. Here, by combining spin-polarised scanning tunnelling microscopy and first-principles calculations, we investigate the magnetism of vdW ML CrTe2, which has been successfully grown through molecular-beam epitaxy. We observe a stable antiferromagnetic (AFM) order at the atomic scale in the ML crystal, whose bulk is ferromagnetic, and correlate its imaged zigzag spin texture with the atomic lattice structure. The AFM order exhibits an intriguing noncollinear spin reorientation under magnetic fields, consistent with its calculated moderate magnetic anisotropy. The findings of this study demonstrate the intricacy of 2D vdW magnetic materials and pave the way for their in-depth analysis. In two dimensions magnetic order without magnetic anisotropy is forbidden, making 2D magnetic systems a rich playground for interesting physics. Here, Xian et al. fabricate monolayers of CrTe2, and demonstrate antiferromagnetic ordering, with spin reorientation at finite magnetic fields. [ABSTRACT FROM AUTHOR]

In kagome lattice, with the emergence of Dirac cones and flat band in electronic structure, it provides a versatile ground for exploring intriguing interplay among frustrated geometry, topology and correlation. However, such engaging interest is strongly limited by available kagome materials in nature. Here we report on a synthetic strategy of constructing kagome systems via self-intercalation of Fe atoms into the van der Waals gap of FeSe 2 via molecular beam epitaxy. Using low-temperature scanning tunneling microscopy, we unveil a kagome-like morphology upon intercalating a 2 × 2 ordered Fe atoms, resulting in a stoichiometry of Fe 5 Se 8 . Both the bias-dependent STM imaging and theoretical modeling calculations suggest that the kagome pattern mainly originates from slight but important reconstruction of topmost Se atoms, incurred by the nonequivalent subsurface Fe sites due to the intercalation. Our study demonstrates an alternative approach of constructing artificial kagome structures, which envisions to be tuned for exploring correlated quantum states.

As a single-elemental system, tellurium can exist stably in the form of layers with an intriguing multivalence character, which constructs a new member of the 2D family. However, the growth and electronic structure of tellurium films are still far from known at present. Here, combined with molecular beam epitaxy, scanning tunneling microscopy/spectroscopy measurements and density functional theory calculations, we report the geometric and electronic structures of tellurium grown on NbSe2 from sub-monolayer to few-layer films. At the sub-monolayer coverage, we obtain two types of adatom-induced ordered superstructures that are strongly coupled with NbSe2. With the increase in coverage, the few-layer tellurium films adopt the α-phase form, showing internal strain-induced ripple patterns in the few-layers and bulk-like in thick layers with distinct edge geometries. The band gap of α-tellurium films decreases with the increase in thickness, which is associated with notable in-gap states. These observations, corroborated with DFT calculations, emphasize the important role of the NbSe2 substrate in modulating the structural and electronic properties of tellurium films. Moreover, the interaction between tellurium adatoms and tellurium films leads to √2 × √2 surface reconstruction prior to a new monolayer, conforming to our theoretical calculations. Our work clarifies the kinetic growth of tellurium films on NbSe2 and reveals the tunability of electronic properties via substrate modulation or surface decoration.