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Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with electric field has been proven to be elusive. Recently, magnetic layered semiconductors have attracted much attention due to their emerging new physical phenomena. However, challenges still remain in the demonstration of a gate controllable magnetism based on them. Here, we show that, via ionic gating, strong field effect can be observed in few-layered semiconducting Cr$_{2}$Ge$_{2}$Te$_{6}$ devices. At different gate doping, micro-area Kerr measurements in the studied devices demonstrate tunable magnetization loops below the Curie temperature, which is tentatively attributed to the moment re-balance in the spin-polarized band structure. Our findings of electric-field controlled magnetism in van der Waals magnets pave the way for potential applications in new generation magnetic memory storage, sensors, and spintronics., Comment: 8 pages, 4 figures

Two-dimensional (2D) semiconductors isoelectronic to phosphorene has been drawing much attention recently due to their promising applications for next-generation (opt)electronics. This family of 2D materials contains more than 400 members, including (a) elemental group-V materials, (b) binary III-VII and IV-VI compounds, (c) ternary III-VI-VII and IV-V-VII compounds, making materials design with targeted functionality unprecedentedly rich and extremely challenging. To shed light on rational functionality design with this family of materials, we systemically explore their fundamental band gaps and alignments using hybrid density functional theory (DFT) in combination with machine learning. First, GGA-PBE and HSE calculations are performed as a reference. We find this family of materials share similar crystalline structures, but possess largely distributed band-gap values ranging approximately from 0 to 8 eV. Then, we apply machine learning methods, including Linear Regression (LR), Random Forest Regression (RFR), and Support Vector Machine Regression (SVR), to build models for prediction of electronic properties. Among these models, SVR is found to have the best performance, yielding the root mean square error (RMSE) less than 0.15 eV for predicted band gaps, VBMs, and CBMs when both PBE results and elemental information are used as features. Thus, we demonstrate machine learning models are universally suitable for screening 2D isoelectronic systems with targeted functionality and especially valuable for the design of alloys and heterogeneous systems., Comment: 6 figures

The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high quality Pb$_{1-x}$Sn$_x$Te(111) films and investigated the TCI phase by in-situ angle-resolved photoemission spectroscopy. Pb$_{1-x}$Sn$_x$Te(111) films undergo a topological phase transition from trivial insulator to TCI via increasing the Sn/Pb ratio, accompanied by a crossover from n-type to p-type doping. In addition, a hybridization gap is opened in the surface states when the thickness of film is reduced to the two-dimensional limit. The work demonstrates an approach to manipulating the topological properties of TCI, which is of importance for future fundamental research and applications based on TCI.

An overview of the mathematical structure of the three-dimensional (3D) Ising model is given, from the viewpoints of topologic, algebraic and geometric aspects. By analyzing the relations among transfer matrices of the 3D Ising model, Reidemeister moves in the knot theory, Yang-Baxter and tetrahedron equations, the following facts are illustrated for the 3D Ising model: 1) The complexified quaternion basis constructed for the 3D Ising model represents naturally the rotation in a (3 + 1) - dimensional space-time, as a relativistic quantum statistical mechanics model, which is consistent with the 4-fold integrand of the partition function by taking the time average. 2) A unitary transformation with a matrix being a spin representation in 2^(nlo)-space corresponds to a rotation in 2nlo-space, which serves to smooth all the crossings in the transfer matrices and contributes as the non-trivial topologic part of the partition function of the 3D Ising model. 3) A tetrahedron relation would ensure the commutativity of the transfer matrices and the integrability of the 3D Ising model, and its existence is guaranteed also by the Jordan algebra and the Jordan-von Neumann-Wigner procedures. 4) The unitary transformation for smoothing the crossings in the transfer matrices changes the wave functions by complex phases {\Phi}x, {\Phi}y, and {\Phi}z. The relation with quantum field and gauge theories, physical significance of weight factors are discussed in details. The conjectured exact solution is compared with numerical results, and singularities at/near infinite temperature are inspected. The analyticity in {\beta} = 1/(kB T) of both the hard-core and Ising models has been proved for {\beta} > 0, not for {\beta} = 0. Thus the high-temperature series cannot serve as a standard for judging a putative exact solution of the 3D Ising model., Comment: 53 pages; 0 figures

We report the conjectures on the three-dimensional (3D) Ising model on simple orthorhombic lattices, together with the details of calculations for a putative exact solution. Two conjectures, an additional rotation in the fourth curled-up dimension and the weight factors on the eigenvectors, are proposed to serve as a boundary condition to deal with the topologic problem of the 3D Ising model. The partition function of the 3D simple orthorhombic Ising model is evaluated by spinor analysis, by employing these conjectures. Based on the validity of the conjectures, the critical temperature of the simple orthorhombic Ising lattices could be determined by the relation of KK* = KK' + KK'' + K'K'' or sinh 2K sinh 2(K' + K'' + K'K''/K) = 1. For a simple cubic Ising lattice, the critical point is putatively determined to locate exactly at the golden ratio xc = exp(-2Kc) = (sq(5) - 1)/2, as derived from K* = 3K or sinh 2K sinh 6K = 1. If the conjectures would be true, the specific heat of the simple orthorhombic Ising system would show a logarithmic singularity at the critical point of the phase transition. The spontaneous magnetization and the spin correlation functions of the simple orthorhombic Ising ferromagnet are derived explicitly. The putative critical exponents derived explicitly for the simple orthorhombic Ising lattices are alpha = 0, beta = 3/8, gamma = 5/4, delta = 13/3, eta = 1/8 and nu = 2/3, showing the universality behavior and satisfying the scaling laws. The cooperative phenomena near the critical point are studied and the results obtained based on the conjectures are compared with those of the approximation methods and the experimental findings. The 3D to 2D crossover phenomenon differs with the 2D to 1D crossover phenomenon and there is a gradual crossover of the exponents from the 3D values to the 2D ones., Comment: 176 pages, 4 figures