134 results on '"Zhang, Zhaohao"'
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2. Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications
3. Investigation on dependency of thermal characteristics on gate/drain bias voltages in stacked nanosheet transistors
4. Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs
5. Unveiling the Role of Filler Characteristics in Enhancing the High-Voltage Performance of Succinonitrile-Based Solid-State Lithium–Metal Batteries.
6. The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂
7. Unique Consecutive RTN Characteristics Coupled With Ferroelectric Nanodomain Switching in Advanced Fe-FinFETs
8. Impact of Thickness Dependent Ferroelectric and Interface Charge Variation on Device-to-Device Variation in Ferroelectric FET
9. Ultrasensitive 3D Stacked Silicon Nanosheet Field-Effect Transistor Biosensor with Overcoming Debye Shielding Effect for Detection of DNA
10. Investigation of the interaction between xanthate and kaolinite based on experiments, molecular dynamics simulation, and density functional theory
11. O2 plasma treated biosensor for enhancing detection sensitivity of sulfadiazine in a high-к HfO2 coated silicon nanowire array
12. Correction: Hu et al. Ultrasensitive Silicon Nanowire Biosensor with Modulated Threshold Voltages and Ultra-Small Diameter for Early Kidney Failure Biomarker Cystatin C. Biosensors 2023, 13 , 645.
13. Long-term stability of photodetectors based on graphene field-effect transistors encapsulated with Si3N4 layers
14. Influence of the hard masks profiles on formation of nanometer Si scalloped fins arrays
15. Investigation of Vertically Stacked Horizontal Gate-All-Around SI Nanosheet Ion Sensitive Field Effect Transistor For Detection of C-Reactive Protein
16. An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors
17. Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C)
18. Ultralow‐Power Compact Artificial Synapse Based on a Ferroelectric Fin Field‐Effect Transistor for Spatiotemporal Information Processing.
19. Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory
20. Stacked HZO/$\alpha$-In$_{\text{2}}$Se$_{\text{3}}$ Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window
21. Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes
22. Numerical Analysis of the Influence of the Impinging Distance on the Scouring Efficiency of Submerged Jets
23. Quasi-Volatile MoS2 Barristor Memory for 1T Compact Neuron by Correlative Charges Trapping and Schottky Barrier Modulation
24. Layout Optimization of Complementary FET 6T-SRAM Cell Based on a Universal Methodology Using Sensitivity With Respect to Parasitic - and -Values
25. Ultrasensitive Silicon Nanowire Biosensor with Modulated Threshold Voltages and Ultra-Small Diameter for Early Kidney Failure Biomarker Cystatin C.
26. Improved Ferroelectricity and Endurance of Hf 0.5 Zr 0.5 O 2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology
27. Selective Wet-Etching of GESI in Multi-Layer GESI/SI Stacks
28. Fabrication and Performance Research of Silicon Nanosheet Field Effect Transistor Biosensor
29. Influence Of B Ions Doping on the Performance of P-Type Silicon Nanowire Field Effect Transistor Biosensor
30. Improving Driving Current with High-Efficiency Landing Pads Technique for Reduced Parasitic Resistance in Gate-All-Around Si Nanosheet Device
31. Scallop-shaped p-type FinFETs with improved short-channel effects immunity and driving current
32. Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs.
33. Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1–xZrxO2
34. A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors
35. Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors
36. Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches
37. Large memory window with low operating voltages using Hf 1.5 Gd 2 O 6 charge trapping layer and thin MoS 2 channel
38. Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window
39. Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO2 Films
40. Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology.
41. Three-dimensional Graphene FETs for pH Detection
42. Copper slag: The leaching behavior of heavy metals and its applicability as a supplementary cementitious material
43. Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices
44. A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs
45. Endurance Characteristics of Negative Capacitance FinFETs With Negligible Hysteresis
46. Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
47. Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate
48. Fabrication of Low Cost and Low Temperature Poly-Silicon Nanowire Sensor Arrays for Monolithic Three-Dimensional Integrated Circuits Applications
49. Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1–xZrxO2.
50. Influences of Encapsulated HfO2 Film on the Performance of Graphene Filed Effect Transistors
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