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Al-doped ZnO (AZO) is a promising candidate as a transparent conducting electrode. However, the electrical properties of AZO deteriorate greatly after exposing it to excessive heat. This limits the applications of AZO in devices that experience a demanding operation environment. It has been shown that a ZnO cap layer with proper morphology is capable to dramatically improve the thermal stability of AZO. However, the detailed mechanism is not yet clear. A comparison study of the electrical properties of AZO with a ZnO cap layer prepared by magnetron sputtering (MS) at low substrate temperature (70 °C) and chemical vapor deposition (CVD) at high substrate temperature (600 °C) indicates that MS-prepared ZnO is much less effective in protecting AZO from an oxidizing environment under elevated temperature than the CVD-prepared ZnO. The morphology and crystal structures of two types of ZnO/AZO, investigated by a scanning electron microscope and x-ray diffraction, are relatively similar, whereas the atomic structures (e.g., defects) revealed by Raman spectroscopy are rather different. The results suggest that it is difficult to improve the thermal stability of electrical properties of AZO without a proper restructuring process and a ZnO cap layer that could sacrifice its own structural order. The discoveries offer a novel approach to improve the performance of other transparent conducting oxides. [ABSTRACT FROM AUTHOR]

WTe2, a low-symmetry transition metal dichalcogenide, has broad prospects in functional device applications due to its excellent physical properties. When WTe2 flake is integrated into practical device structures, its anisotropic thermal transport could be affected greatly by the substrate, which matters a lot to the energy efficiency and functional performance of the device. To investigate the effect of SiO2/Si substrate, we carried out a comparative Raman thermometry study on a 50 nm-thick supported WTe2 flake (with κzigzag = 62.17 W·m−1·K−1 and κarmchair = 32.93 W·m−1·K−1), and a suspended WTe2 flake of similar thickness (with κzigzag = 4.45 W·m−1·K−1, κarmchair = 4.10 W·m−1·K−1). The results show that the thermal anisotropy ratio of supported WTe2 flake (κzigzag/κarmchair ≈ 1.89) is about 1.7 times that of suspended WTe2 flake (κzigzag/κarmchair ≈ 1.09). Based on the low symmetry nature of the WTe2 structure, it is speculated that the factors contributing to thermal conductivity (mechanical properties and anisotropic low-frequency phonons) may have affected the thermal conductivity of WTe2 flake in an uneven manner when supported on a substrate. Our findings could contribute to the 2D anisotropy physics and thermal transport study of functional devices based on WTe2 and other low-symmetry materials, which helps solve the heat dissipation problem and optimize thermal/thermoelectric performance for practical electronic devices. [ABSTRACT FROM AUTHOR]

Metal nanoparticles or nanoclusters have been widely used to functionalize semiconductor metal oxide nanostructures-based gas sensors or photodetectors to significantly enhance the device performance. It is crucial to reach a thorough understanding of the interfacial coupling between the metal nanoclusters and the metal oxide nanostructures. Here, in situ X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) have been used to investigate the interfacial interactions between metals (Au and Co) and molybdenum trioxide (MoO3) films. In spite of the high work function (6.8eV) of the thermally evaporated MoO3 films, only weak interaction is observed at the Au/MoO3 interface. Au clusters or films can remain their neutral and nonchemically reacted state on MoO3 film. In contrast, the interfacial chemical reaction between Co and MoO3 is significantly strong. A band-bending in MoO3 and two interface states have been observed at the Co/MoO3 interface. [ABSTRACT FROM AUTHOR]

Steadily, continuously, and precisely adjusting infrared emissivity of materials is of great importance for various applications, such as thermal camouflage. Herein, a method is proposed to fine-tune the emissivity of multilayer graphene (MLG) by ion intercalation with assistance of pulse voltage. The dynamic ion intercalation process in MLG-based emissivity modulators is investigated by a home-made electrical-optical synchronizing test system, which consists of a potentiostat and a thermal camera. It is observed that the apparent temperature of MLG is closely correlated with pulse duration and residual charges. Based on a second-order RC model, the ion transportation and charge transfer in the modulator are likely affected by three factors (i.e., internal resistance, electric field, and concentration gradient), which changes the doping level of MLG. Hence, the emissivity of MLG can be finely adjusted by regulating the duration of the voltage pulse. This also leads to a wavelength dependence of emissivity modulation, which is confirmed by Fourier transform infrared spectroscopy. The observations offer a promising venue for precise and continuous adjustment of MLG's emissivity, which is of great significance for many practical applications, such as simulating complex and subtle thermal images. [ABSTRACT FROM AUTHOR]

Actively controlling the infrared emissivity of materials is critical for many applications, such as radiative cooling and thermal camouflage. Multilayer graphene (MLG) has shown great potential as a functional material with a tunable infrared emissivity. However, the spatial homogeneity in adjusting MLG's emissivity through ion intercalation is rather poor, which limits its practical applications. Here, we study how mixing various molecular components (e.g., ethanol) with ionic liquids affects the performance of MLG-based infrared emissivity modulators. The results indicate that introducing a moderate concentration of molecular components not only significantly improves spatial homogeneity in tuning emissivity but also enhances modulation depth, dynamic response, and the stability of the modulators. This is likely due to the increasing conductivity of the mixture and the improved wetting properties between the mixture and the separator, which leads to more effective charge transfer from ions in ionic liquids to carbons in graphene. The microscopic structure of MLG, revealed by Raman spectroscopy, confirms that the improvement in modulator performance is mostly due to homogeneous transportation of ions in the modulators. This not only sheds light on the underlying physics of the modulator but also greatly expands the options when selecting ionic liquids, thereby opening a new route for the modulator design. [ABSTRACT FROM AUTHOR]

[Display omitted] Both high through-plane thermal conductivity and low elastic modulus can reduce thermal interface resistance, which is important for thermal interface materials. The internal porous structure of graphene aerogel (GA) makes it to have a low elastic modulus, which results in its good compressibility. Also, the network structure of GA provides thermal conducting paths, which improve the through-plane thermal conductivity of GA. Annealing GA at 3000 °C helps to remove oxygen-containing functional groups and reduces defects. This greatly improves its crystallinity, which further leads to the improvement of its through-plane thermal conductivity and it has a low modulus of 1.37Mpa. The through-plane thermal conductivity of GA annealed at 3000 °C (GA-3000) was improved as the pressure increased and got to 2.93 W/ m K at a pressure of 1.13 MPa, which is 30 times higher than other graphene-based thermal interface materials (TIMs). These discoveries offer a novel approach for preparing excellent TIMs. [ABSTRACT FROM AUTHOR]

With the continuous advancement of electronic devices, there is an urgent need for advanced thermal interface materials (TIMs) to prevent high-power density electronics from overheating. The orderly arrangement of thermally conductive fillers in TIMs plays a crucial role in enhancing thermal conduction along preferred directions. However, it is challenging to control the orientation of the fillers, especially for two-dimensional fillers. In this study, graphene nanoplates (GNPs) were co-planarly arranged in polyvinyl alcohol (PVA) using a rotating magnetic field, which significantly increased the thermal conductivity of the composites. The coplanar vertically aligned GNPs/PVA (CVGNPs/PVA) exhibited a through-plane thermal conductivity of 11.78 W m−1 K−1, which is about 10 times higher than that of the composites with disorderly distributed GNPs (1.14 W m−1 K−1). The rotating magnetic field facilitated the alignment of GNPs and increased face-to-face contact between adjacent GNPs, which significantly boosted the through-plane thermal conductivity of the composite. The compressive modulus of the CVGNPs/PVA composites was only 1.06 MPa, and it helped to reduce the thermal interface resistance to 49 mm2 K W−1. These results offer a novel approach for preparing excellent TIMs that could be used in various applications. GNPs are oriented more compactly and orderly in PVA by using the rotating magnetic field, resulting in a densified thermal conductive paths and higher thermal conductivity of the composite. [Display omitted] [ABSTRACT FROM AUTHOR]

Graphene photodetectors are highly attractive owing to its ultra-fast and wide-range spectral response from visible to infrared benefit from the superior carrier mobility and the linear dispersion with zero bandgap of graphene. The application of graphene photodetectors however is seriously limited by the low intrinsic responsivity in the order of ∼10 mA/W. Here, we demonstrate photogating field-effect transistors based on pure monolayer graphene with simple device structures. The light absorption in the heavily n-doped silicon/silicon oxide (Si/SiO2) substrate generates an additional photovoltage that effectively modulates the conductance of graphene, leading to room temperature graphene photodetectors with high responsivity of ∼500 A/W for 450 nm light and ∼4 A/W for 1064 nm light, respectively. The generated photocurrent changes with applied gate voltage and shows a strongly nonlinear power dependence. Meanwhile, the photoresponse of graphene exhibits a cut-off wavelength of ∼1100 nm, confirming the dominance photogating effect caused by light absorption in Si/SiO2 substrate. Considering the great compatibility of graphene to Si technology, our result paves a way for high-performance chip-integrated photodetectors. [ABSTRACT FROM AUTHOR]

In this letter, we report an oxygen-assisted chemical vapor deposition method to synthesize uniform large-area high-quality multilayer hexagonal boron nitride (hBN) films (denoted by O-hBN). Nonvolatile bipolar resistive switching (RS) of resistive random access memories (RRAMs) based on O-hBN films is presented. These RRAMs exhibit enhanced RS performance with lower cycle-to-cycle variability, lower set voltage, and higher current on/off ratio. The enhancement is benefited from the clean and smooth surface of O-hBN films and the reduction of grain boundaries which serve as an energetically favored path for ion migration. This scalable approach to synthesize hBN films could facilitate practical applications of hBN-based RRAMs. [ABSTRACT FROM AUTHOR]

2H phase Molybdenum ditelluride (MoTe2) is a layered two-dimensional (2D) semiconductor that has recently gained extensive attention for its intriguing properties, demonstrating great potential for nanoelectronics and optoelectronics. Optimizing the electric contacts to MoTe2 is a critical step for realizing high performance devices. Here, we demonstrate Co/hBN tunnel contacts to few-layer MoTe2. In sharp contrast to the p-type conduction of Co contacted MoTe2, Co/hBN tunnel contacted MoTe2 devices show clear n-type transport properties. Our first principles calculation reveals that the inserted few-layer hBN strongly interacts with Co and significantly reduces its work-function by ∼1.2 eV, while MoTe2 itself has a much weaker influence on the work-function of Co. This allows us to build MoTe2 diodes using the mixed Co/hBN and Co contact architecture, which can be switched from p-n type to n-p type by changing the gate-voltage, paving the way for engineering multi-functional devices based on atomically thin 2D semiconductors. [ABSTRACT FROM AUTHOR]

Abstract: Semiconducting molybdenum ditelluride (2H‐MoTe2), a fast‐emerging 2D material with an appropriate band gap and decent carrier mobility, is configured as field‐effect transistors and is the focus of substantial research interest, showing hole‐dominated ambipolar characteristics. Here, carrier modulation of ambipolar few‐layer MoTe2 transistors is demonstrated utilizing magnesium oxide (MgO) surface charge transfer doping. By carefully adjusting the thickness of MgO film and the number of MoTe2 layers, the carrier polarity of MoTe2 transistors from p‐type to n‐type can be reversely controlled. The electron mobility of MoTe2 is significantly enhanced from 0.1 to 20 cm2 V−1 s−1 after 37 nm MgO film doping, indicating a greatly improved electron transport. The effective carrier modulation enables to achieve high‐performance complementary inverters with high DC gain of >25 and photodetectors based on few‐layer MoTe2 flakes. The results present an important advance toward the realization of electronic and optoelectronic devices based on 2D transition‐metal dichalcogenide semiconductors. [ABSTRACT FROM AUTHOR]

Non-uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS2) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiOx layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS2/NiOx/Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors. [ABSTRACT FROM AUTHOR]

Van der Waals epitaxy growth of two-dimensional materials promise controllable fabrication of novel artificial heterostructures. Here, we report molecular beam epitaxy growth of continuous molybdenum ditelluride (MoTe 2 ) films on graphene substrates with good stoichiometry in both 2H and 1T′ phases. Post-growth annealing reveal phase transition suppressed in Te-rich atmosphere, through in-situ scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy. Our results suggest a new route to fabricate atomically ultrathin MoTe 2 lateral heterophase homojunctions, showing potential applications in future lateral thin-film transistors. [ABSTRACT FROM AUTHOR]

Two-dimensional layered heterostructures show great potential to develop optoelectronic systems. Here, we have investigated the photoresponse properties of two contact interfaces in few-layer graphene–WSe 2 heterostructures. The photoresponsivity of graphene–WSe 2 contact interface is about 2.67 mA/W, and the photoresponsivity of WSe 2 –metal contact interface is about 0.2 mA/W. Photocurrent images show that the two contact interfaces behave differently under drain voltage from − 0.5 V to 0.5 V. The photoresponsivity of one contact interface increases with the drain voltage, and that of the other decreases with the drain voltage. Experimental results and band diagram studies prove that the photoresponse properties of contact interfaces are tuned by small drain voltage. This study will be beneficial for understanding the effect of drain voltage on the heterostructures. [ABSTRACT FROM AUTHOR]

Efficient thermal interface materials (TIMs) are urgently needed for heat dissipation of high-power density electronics. In this study, vinyl polydimethylsiloxane (PDMS) composites with the spatial alignment of carbon fibers (CFs) bridged by Al 2 O 3 particles were fabricated by the flow field. The through-plane thermal conductivity (TPTC) of the composites with 24 vol% CFs and 47 vol% Al 2 O 3 loading reached 38.0 W m−1 K−1. The oriented CFs bridged by Al 2 O 3 acted as the efficient through-plane thermal conductive network. Furthermore, the effects of shape factor (b/a), spatial angle (γ) of CFs, and CF loading (V f) on the TPTC were quantitatively discussed by steady-state finite element simulation combined with micro-computed tomography and machine learning. The positive contribution of the increased V f to TPTC was in competition with the negative contribution of b/a and γ , both of which increased with the increase of V f. Moreover, b/a exerted more negative effects than γ. The PDMS composites demonstrated excellent thermal stability (T d = 407.5 °C, CTE = −55.3 × 10−6 K−1), low compress modulus (1.71 MPa), and hardness (47 (Shore C)), which made them potential candidates for TIMs. This work offers a feasible method to prepare TIMs on large scale and refreshes the thermal conduction mechanism of TIMs by introducing the influencing factors (b/a and γ). [Display omitted] • Efficient heat conduction paths were constructed by spatial alignment of CFs bridged by Al 2 O 3. • The through-plane thermal conductivity of PDMS composites reached 38 W m−1 K−1. • The effect of spatial orientation angle of CFs on the thermal conduction property was revealed. • The PDMS composites with excellent comprehensive properties can be used as TIMs. [ABSTRACT FROM AUTHOR]

[Display omitted] • Magnetized carbon fibers (MCF) were vertically arranged in silicone rubber (SR) in magnetic field. • The λ of SR composites demonstrated an unusual power-law growth with the increase of MCF. • The o-MCF/SR-9 vol% composite exhibited a high λ of 4.72 W/(m·K) with 2045.5 % enhancement. • A new parameter, "shape factor", was introduced to reveal the heat conduction mechanism. The continual increase in power density and consumption of modern electronic devices calls for high-performance thermal interface materials (TIMs). In this work, silicone rubber composites with vertically oriented magnetic carbon fibers (o-MCF/SR) were successfully prepared via the cast molding and filler orientation upon uniform magnetic field in a vacuum environment. The through-plane thermal conductivity of o-MCF/SR composites showed an unusual power-law growth with increasing MCF loading. At a 9 vol% MCF loading, the o-MCF/SR composite exhibited a maximum through-plane thermal conductivity of 4.72 W/(m·K) with 2045.5 % TCE, about 3.55 W/(m·K) higher than that of SR composites with randomly dispersed MCF (λ = 1.17 W/(m·K), TCE = 431.8 %). To reveal the underlying through-plane heat conduction mechanism of o-MCF/SR composites, finite element simulation combined with classical effective medium theory model and machine learning method was used. A homogeneous unit fiber-filled composite (HUFC) was modelled, and a new parameter influencing the through-plane thermal conductivity, i.e. , shape factor (b / a), was introduced here for the first time. Theoretically, this shape factor was dependent on the filler content and indirectly reflected the assembly of matrix and 1D filler in HUFC fit to a parallel-series hybrid model. Furthermore, a decrease of b / a was practically found with increasing MCF loading, and the dominant series-type assembly gradually transformed to parallel-type assembly of the o-MCF/SR composites. This work not only developed a method to fabricate desirable TIMs that hold great promise for advanced thermal management, but also introduced a new parameter to reveal the underlying mechanism for heat conduction capacity of polymer composites. [ABSTRACT FROM AUTHOR]

Currently, epoxy-based composites are widely used in thermal management. However, with the development of complex and high power-density electronic devices, the thermal properties of the composites need to be improved. Inspired by the unique galls-leaf structure of Distylium chinense, a graphene-diamond framework (GRDF) is developed by a simple filtration method. A through-plane and in-plane thermal conductivity of 22.7 and 21.8 Wm−1 K−1, respectively, have been achieved by forming epoxy-based composites with the GRDF annealed at 3000 °C. The result is 70% higher than the best-reported value for epoxy-based composites prepared by vacuum filtration under a filler content of 43 wt%. Such high thermal conductivity remains unchanged (within 2%) in a temperature range from 25 to 100 °C. Based on various microscopic characterizations, the diamond particles evenly distribute in a framework formed by graphene sheets, which bridge the gaps in the framework and improve its structural integrity. High-temperature annealing converts most diamond particles to graphite, which further enhances the thermal properties of the composite. The observations provide a feasible way for developing polymer-based composite with high thermal conductivity, which could meet the ever-increasing demands for heat dissipation in high-power electronics. [Display omitted] • The epoxy composite with a through-plane thermal conductivity of 22.7 Wm−1K−1 is achieved under 43.2 wt.% filler filling. • The composites show a high degree of isotropic thermal properties, and a good thermal stability. • The high thermal conductivity of the composite is due to diamond filling and high-temperature graphitization. [ABSTRACT FROM AUTHOR]

A review of carbon-based thermal interface materials: mechanisms, thermal measurements and thermal properties. [Display omitted] • Various carbon-based thermal interface materials were reviewed, ranging from one-dimensional carbon nanotubes, two-dimensional graphene films, to three-dimensional graphene foams, graphene aerogels, vertical graphene and other 3D graphene. • Thermal measurements for bulk and nanoscale materials were discussed to offer a guidance for improving the precision of the results. • The challenges for carbon-based thermal interface materials were discussed, including how to decrease the overall thermal resistance of thermal interface materials, the potential applications from micro to macro devices and the prerequisites for industrial application. With the development of electronic technologies, electronic devices become smaller, while their power density increases dramatically. The resulting excessive heat requires excellent heat dissipation to ensure great performance of the devices. A good thermal interface material (TIM), with excellent bulk thermal conductivity and proper elastic modulus, which can fill the gap between contact surfaces, is of great importance to improve overall performance of thermal management in the electronic devices. Carbon-based materials, such as carbon nanotubes (CNTs) and graphene (Gr), have attracted great attentions, due to their intrinsic high thermal conductivity. In this paper, carbon-based TIMs are reviewed, as well as the thermal conducting mechanisms and techniques to measure thermal properties for materials. The unique three-dimensional network of 3D-Gr provides not only high thermal conductivity, but also excellent mechanical properties, which makes it more competitive as TIM than CNTs and Gr. Furthermore, there is currently no universal characterization techniques, which are suitable to measure thermal properties of all TIMs. Hence, special attention must be paid to select a proper technique based on the measuring principle, in order to obtain accurate results. An outlook of the future challenges of the thermal interface materials is proposed at the end of the paper. [ABSTRACT FROM AUTHOR]

Abstract: The periodic disposed gold nanoparticle arrays (GNPAs) are very useful for wide range applications. Employing the neutralization reaction between chloroauric acid and amino groups, GNPAs were self-assembled inside pore channels of amino-functionalized mesoporous silica thin films (AF-MSTFs) which were produced by using the surface active agent CTAB (cetyltrimethyl ammonium bromide). The AF-MSTF samples were characterized by FTIR, XRD and TEM. The results show that the average diameter of quantum dots was controlled by the highly ordered pore channels. UV–vis absorption spectra of the GNPAs/AF-MSTF nanocomposites exhibit blue-shift and intensity decrease of absorption peaks as the neutralization reaction time decreases, representing the existence of GNPs and revealing an adjustable optical property. [Copyright &y& Elsevier]

A so called all-carbon based graphene field effect transistor (GFET) in which the electrodes are composed of graphite-like nano-sheets instead of metals in the traditional devices is fabricated by one-step e-beam direct writing (EBDW). It is also found that the graphite-like nano-sheets in electrodes are perpendicular to the channel graphene, which is confirmed by the transmission electron microscopy (HRTEM). The one-step fabrication of the carbonaceous electrodes is more convenient and lower-cost comparing to the preparation of traditional metal electrodes and can be applied to many other nano-electronic devices. [ABSTRACT FROM AUTHOR]