Search

Quantum dots (QDs) often exhibit unique behaviors because the reduction in lateral size leads to stronger quantum confinement effects and a higher surface-to-volume ratio in comparison with larger two-dimensional nanosheets. However, the preparation of homogeneous QDs remains a longstanding challenge. This work reports the preparation of high-yield and ultrasmall tin disulfide (SnS2) QDs by combining top–down and bottom–up approaches. The as-prepared SnS2 QDs have a uniform lateral size of 3.17 ± 0.62 nm and a thicknesses 2.39 ± 0.88 nm. A series of self-powered photoelectrochemical-type photodetectors (PDs) utilizing the SnS2 QDs as photoelectrodes are also constructed. Taking advantage of the tunable bandgaps and high carrier mobility of the SnS2, our PDs achieve a high photocurrent density of 16.38 μA cm−2 and a photoresponsivity of 0.86 mA W−1, and good long-term cycling stability. More importantly, the device can display obvious photoresponse, even at zero bias voltage (max), and greater weak-light sensitivity than previously reported SnS2-based PDs. Density functional theory calculation and optical absorption were employed to reveal the working mechanism of the SnS2 QDs-based PDs. This study highlights the prospective applications of ultrasmall SnS2 QDs and provides a new route towards future design of QDs-based optoelectronic devices.

A novel surface plasmon resonance (SPR) refractive index (RI) sensor based on the D-type dual-mode photonic crystal fiber (PCF) is proposed. The sensor employs a side-polished few-mode PCF that facilitates the transmission of the fundamental and second-order modes, with an integrated microfluidic channel positioned directly above the fiber core. This design minimizes the distance to the analyte and maximizes the interaction between the optical field and the analyte, thereby enhancing the SPR effect and resonance loss for improved sensing performance. Au-TiO2 dual-layer material was coated on the surface of a microfluidic channel to enhance the penetration depth of the core evanescent field and tune the resonance wavelength to the near-infrared band, meeting the special needs of chemical and biomedical detection fields. The finite element method was utilized to systematically investigate the coupling characteristics between various modes and surface plasmon polariton (SPP) modes, as well as the impact of structural parameters on the sensor performance. The results indicate that the LP11b_y mode exhibits greater wavelength sensitivity than the HE11_y mode, with a maximum sensitivity of 33,000 nm/RIU and an average sensitivity of 8272.7 nm/RIU in the RI sensing range of 1.25–1.36, which is higher than the maximum sensitivity of 16,000 nm/RIU and average sensitivity of 5666.7 nm/RIU for the HE11b_y mode. It is believed that the proposed PCF-SPR sensor features both high sensitivity and high resolution, which will become a critical device for wide RI detection in mid-infrared fields. [ABSTRACT FROM AUTHOR]

Quantum dots (QDs) often exhibit unique behaviors because the reduction in lateral size leads to stronger quantum confinement effects and a higher surface-to-volume ratio in comparison with larger two-dimensional nanosheets. However, the preparation of homogeneous QDs remains a longstanding challenge. This work reports the preparation of high-yield and ultrasmall tin disulfide (SnS2) QDs by combining top–down and bottom–up approaches. The as-prepared SnS2 QDs have a uniform lateral size of 3.17 ± 0.62 nm and a thicknesses 2.39 ± 0.88 nm. A series of self-powered photoelectrochemical-type photodetectors (PDs) utilizing the SnS2 QDs as photoelectrodes are also constructed. Taking advantage of the tunable bandgaps and high carrier mobility of the SnS2, our PDs achieve a high photocurrent density of 16.38 μA cm−2 and a photoresponsivity of 0.86 mA W−1, and good long-term cycling stability. More importantly, the device can display obvious photoresponse, even at zero bias voltage (max), and greater weak-light sensitivity than previously reported SnS2-based PDs. Density functional theory calculation and optical absorption were employed to reveal the working mechanism of the SnS2 QDs-based PDs. This study highlights the prospective applications of ultrasmall SnS2 QDs and provides a new route towards future design of QDs-based optoelectronic devices. [ABSTRACT FROM AUTHOR]

It has been demonstrated that the piezoresistive effect in silicon can be useful for boosting electromechanical transduction in Micro Electro Mechanical Systems (MEMS) resonators. Piezoresistive sensing has been applied to a number of different extensional mode resonator topologies. In comparison, flexural modes are more compliant and of greater interest for mechanical sensing applications. To adopt piezoresistive sensing, flexural-mode resonators require patterning and doping to define piezoresistors at given locations. In this paper, we report a MEMS flexural-mode double-ended tuning fork (DETF) resonator that employs piezoresistive readout using the whole beam as the piezoresistive strain gauge. We show that the boundary conditions of the DETF allow for linear piezoresistive readout at the fundamental resonant frequency. In our device characterization results, we show that a bias current of 10 mA increases the transduction by 22 dB over the capacitive readout. We also model the coupling between beam deformations and the resulting changes in piezoresistivity. [ABSTRACT FROM AUTHOR]