1. Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study.
- Author
-
Qu, Hengze, Zhang, Shengli, Cao, Jiang, Wu, Zhenhua, Chai, Yang, Li, Weisheng, Li, Lain-Jong, Ren, Wencai, Wang, Xinran, and Zeng, Haibo
- Subjects
- *
ORBITAL interaction , *ATOMIC orbitals , *ELECTRONIC band structure , *ATOMIC structure , *LOGIC circuits - Abstract
[Display omitted] Developing low-power FETs holds significant importance in advancing logic circuits, especially as the feature size of MOSFETs approaches sub-10 nanometers. However, this has been restricted by the thermionic limitation of SS , which is limited to 60 mV per decade at room temperature. Herein, we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize sub-thermionic SS in MOSFETs. Through high-throughput calculations, we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport potential. This guides us to screen 192 candidates from the 2D material database comprising 1608 systems. Additionally, the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed, which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 V. This work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF