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Electron spin qubits in silicon are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit Controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with a fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise.

Despite the rapid progress in the study of planar Hall effect (PHE) in recent years, all the previous works only showed that the PHE is connected to local geometric quantities, such as Berry curvature. Here, for the first time, we point out that the PHE in magnetic Weyl semimetals is directly related to a global quantity, namely, the Chern number of the Weyl point. This leads to a remarkable consequence that the PHE observation predicted here is robust against many system details, including the Fermi energy. The main difference between non-magnetic and magnetic Weyl points is that the latter breaks time-reversal symmetry T, thus generally possessing an energy tilt. Via semiclassical Boltzmann theory, we investigate the PHE in generic magnetic Weyl models with energy tilt and arbitrary Chern number. We find that by aligning the magnetic and electric fields in the same direction, the trace of the PHE conductivity contributed from Berry curvature and orbital moment is proportional to the Chern number and the energy tilt of the Weyl points, resulting in previously undiscovered quantized PHE plateau by varying Fermi energy. We further confirm the existence of PHE plateaus in a more realistic lattice model without T symmetry. By proposing a new quantized physical quantity, our work not only provides a new tool for extracting the topological character of the Weyl points but also suggests that the interplay between topology and magnetism can give rise to intriguing physics., Comment: 15 pages, 5 figures

Exploring new Hall effect is always a fascinating research topic. The ordinary Hall effect and the quantum Hall effect, initially discovered in two-dimensional (2D) non-magnetic systems, are the phenomena that a transverse current is generated when a system carrying an electron current is placed in a magnetic field perpendicular to the currents. In this work, we propose the electric counterparts of these two Hall effects, termed as electric Hall effect (EHE) and quantum electric Hall effect (QEHE). The EHE and QEHE emerge in 2D magnetic systems, where the transverse current is generated by applying an electric gate-field instead of a magnetic field. We present a symmetry requirement for intrinsic EHE and QEHE. With a weak gate-field, we establish an analytical expression of the intrinsic EHE coefficient. We show that it is determined by intrinsic band geometric quantities: Berry curvature and its polarizability which consists of both intraband and interband layer polarization. Via first-principles calculations, we investigate the EHE in the monolayer Ca(FeN)$_2$, where significant EHE coefficient is observed around band crossings. Furthermore, we demonstrate that the QEHE can appear in the semiconductor monolayer $\rm BaMn_2S_3$, of which the Hall conductivity exhibits steps that take on the quantized values $0$ and $\pm1$ in the unit of $e^2/h$ by varying the gate-field within the experimentally achievable range. Due to the great tunability of the electric gate-field, the EHE and QEHE proposed here can be easily controlled and should have more potential applications., Comment: 7 pages, 3 figures

A real Chern insulator (RCI) featuring a real Chern number and a second-order boundary mode appears in a two-dimensional (2D) system with the space-time inversion symmetry (PT ). Here, we propose a kind of RCI: mirror real Chern insulator (MRCI) which emerges from the system having additional horizontal mirror symmetry Mz. The MRCI generally is characterized by two independent real Chern numbers, respectively defined in the two mirror subsystems of the system. Hence, the MRCI may host the second-order boundary modes different from the conventional RCI. We show that for spinless systems, the definition of the MRCI is straightforward, as PT keeps each mirror subsystem invariant. For the spinful systems with both PT and Mz, the real Chern number for the total system remain well defined, as MzPT = C2zT , and (C2zT )2= 1. However, since C2zT exchanges the two mirror subsystems, the definition of the MRCI in spinful systems requires the help of projective symmetry algebra. We also discuss the MRCIs in 3D systems, where the MRCI is defined on certain mirror-invariant 2D planes. Compared with its 2D counterpart, the 3D MRCI can exhibit more abundant physics when the systems have additional nonsymmorphic operators. Several concrete MRCI models including 2D and 3D, spinless and spinful models are constructed to further demonstrate our ideas.

In three dimensions, quasi-one-dimensional (Q1D) transport has traditionally been associated with systems featuring a Q1D chain structure. Here, based on first-principle calculations, we go beyond this understanding to show that the Q1D transport can also be realized in certain three-dimensional (3D) altermagnetic (AM) metals with a topological nodal net in momentum space but lacking Q1D chain structure in real space, including the existing compounds $\beta$-Fe$_2$(PO$_4$)O, Co$_2$(PO$_4$)O, and LiTi$_2$O$_4$. These materials exhibit an AM ground state and feature an ideal crossed $Z^3$ Weyl nodal line in each spin channel around Fermi level, formed by three straight and flat nodal lines traversing the entire Brillouin zone. These nodal lines eventually lead to an AM $Z^3$ nodal net. Surprisingly, the electronic conductivity $\sigma_{xx}$ in these topological nodal net metals is dozens of times larger than $\sigma_{yy}$ and $\sigma_{zz}$ in the up-spin channel, while $\sigma_{yy}$ dominates transport in the down-spin channel. This suggests a distinctive Q1D transport signature in each spin channel, and the principal moving directions for the two spin channels are orthogonal, resulting in Q1D direction-dependent spin transport. This novel phenomenon cannot be found in both conventional 3D bulk materials and Q1D chain materials. In particular, the Q1D spin transport gradually disappears as the Fermi energy moves away from the nodal net, further confirming its topological origin. Our work not only enhances the comprehension of topological physics in altermagnets but also opens a new direction for the exploration of topological spintronics.

Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control through the electric field is generally more practical, and has become a focal point in the field of spintronics. Current methodologies for generating spin polarization via an electric field generally necessitate spin-orbit coupling. Here, we propose an innovative mechanism that accomplishes this task without dependence on spin-orbit coupling. Our method employs two-dimensional altermagnets with valley-mediated spin-layer coupling (SLC), in which electronic states display symmetry-protected and valley-contrasted spin and layer polarization. The SLC facilitates predictable, continuous, and reversible control of spin polarization using a gate electric field. Through symmetry analysis and ab initio calculations, we pinpoint high-quality material candidates that exhibit SLC. We ascertain that applying a gate field of $0.2$ eV/\AA~ to monolayer Ca(CoN)$_2$ can induce significant spin splitting up to 123 meV. As a result, perfect and switchable spin/valley-currents, and substantial tunneling magnetoresistance can be achieved in these materials using only a gate field. These findings provide new opportunities for generating predictable spin polarization and designing novel spintronic devices based on coupled spin, valley and layer physics.

Two-dimensional checkerboard lattice, the simplest line-graph lattice, has been intensively studied as a toy model, while material design and synthesis remain elusive. Here, we report theoretical prediction and experimental realization of the checkerboard lattice in monolayer Cu$_2$N. Experimentally, monolayer Cu$_2$N can be realized in the well-known N/Cu(100) and N/Cu(111) systems that were previously mistakenly believed to be insulators. Combined angle-resolved photoemission spectroscopy measurements, first-principles calculations, and tight-binding analysis show that both systems host checkerboard-derived hole pockets near the Fermi level. In addition, monolayer Cu$_2$N has outstanding stability in air and organic solvents, which is crucial for further device applications., Comment: Nano Letters, in press

We demonstrate the emergence of a pronounced thermal transport in the recently discovered class of magnetic materials-altermagnets. From symmetry arguments and first-principles calculations performed for the showcase altermagnet, RuO2, we uncover that crystal Nernst and crystal thermal Hall effects in this material are very large and strongly anisotropic with respect to the Neel vector. We find the large crystal thermal transport to originate from three sources of Berry's curvature in momentum space: the Weyl fermions due to crossings between well-separated bands, the strong spin-flip pseudonodal surfaces, and the weak spin-flip ladder transitions, defined by transitions among very weakly spin-split states of similar dispersion crossing the Fermi surface. Moreover, we reveal that the anomalous thermal and electrical transport coefficients in RuO2 are linked by an extended Wiedemann-Franz law in a temperature range much wider than expected for conventional magnets. Our results suggest that altermagnets may assume a leading role in realizing concepts in spin caloritronics not achievable with ferromagnets or antiferromagnets., Comment: 6 pages

Hydrogen, a simple and magic element, has attracted increasing attention for its effective incorporation within solids and powerful manipulation of electronic states. Here, we show that hydrogenation tackles common problems in two-dimensional borophene, e.g., stability and applicability. As a prominent example, a ladder-like boron hydride sheet, named as 2D ladder polyborane, achieves the desired outcome, enjoying the cleanest scenario with an anisotropic and tilted Dirac cone, that can be fully depicted by a minimal two-band tight-binding model. Introducing external fields, such as an electric field or a circularly-polarized light field can effectively induce distinctive massive Dirac fermions, whereupon four types of multi-field-driven topological domain walls hosting tunable chirality and valley indexes are further established. Moreover, the 2D ladder polyborane is thermodynamically stable at room temperature and supports highly switchable Dirac fermions, providing an ideal platform for realizing and exploring the various multi-field-tunable electronic states., Comment: 25 pages, 5 figures

More is left to do in the field of flat bands besides proposing theoretical models. One unexplored area is the flat bands featured in the van der Waals (vdW) materials. Exploring more flat-band material candidates and moving the promising materials toward applications have been well recognized as the cornerstones for the next-generation high-efficiency devices. Here, we utilize a powerful high-throughput tool to screen desired vdW materials based on the Inorganic Crystal Structure Database. Through layers of filtration, we obtained 861 potential monolayers from 4997 vdW materials. Significantly, it is the first example to introduce flat-band electronic properties in the vdW materials and propose three families of representative flat-band materials by mapping two-dimensional (2D) flat-band lattice models. Unlike existing screening schemes, a simple, universal rule, i.e., 2D flat-band score criterion, is first proposed to efficiently identify 229 high-quality flat-band candidates, and guidance is provided to diagnose the quality of 2D flat bands. All these efforts to screen experimental available flat-band candidates will certainly motivate continuing exploration towards the realization of this class of special materials and their applications in material science.

Recently discovered high-quality nodal chain spin-gapless semimetals $M$F$_3$ ($M$ = Pd, Mn) feature an ultra-clean nodal chain in the spin up channel residing right at the Fermi level and displaying a large spin gap leading to a 100\% spin-polarization of transport properties. Here, we investigate both intrinsic and extrinsic contributions to anomalous and spin transport in this class of materials. The dominant intrinsic origin is found to originate entirely from the gapped nodal chains without the entanglement of any other trivial bands. The side-jump mechanism is predicted to be negligibly small, but intrinsic skew-scattering enhances the intrinsic Hall and Nernst signals significantly, leading to large values of respective conductivities. Our findings open a new material platform for exploring strong anomalous and spin transport properties in magnetic topological semimetals., Comment: 7 pages, 4 figures