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In this paper, the influence of the type of interface treatment on the p‐Si surface (H2 or O2 plasma) and the SiH4 flow rate of SiOx on the characteristics stability of low‐temperature poly‐crystalline thin film transistors (LTPS‐TFT) has been investigated. The results indicate that H2 plasma is more effective than O2 plasma to repair low‐energy‐level defects at the interface of p‐Si layer and gate insulator layer (GI), and thus the threshold voltage (Vth) and subthreshold swing (ss) are smaller. And increasing the SiH4 flow rate of SiOx from 1900sccm to 3900sccm helps to form a defect‐reduced and more stable p‐Si film. Finally, the brightness degradation test shows that after aging for 24H with L255, the L3 brightness of base sample decreased by almost 32%, while improved sample decreased by only 8%. [ABSTRACT FROM AUTHOR]

Crystalline organic light-emitting diodes (OLEDs) have attracted continuous attention due to their capacity to withstand high current densities. Although crystalline OLEDs are of great potential for achieving electrically pumped organic lasers, the poor performance of these devices impedes their application. Therefore, the improvement of the performance of crystalline OLEDs is highly desirable. Here, this paper reports a para-sexiphenyl (p-6P)/tris(8-hydroxyquinoline) aluminum (Alq3) OLED with high efficiency based on high-quality crystalline films. The p-6P/Alq3 crystalline OLED exhibits a high external quantum efficiency (EQE) of 1.44% at ∼5000 cd m−2, which is ＞100 times more than other reported crystalline OLEDs. At high driving current density, the results show that the p-6P/Alq3 crystalline OLED exhibits better survivability than a p-6P/Alq3 amorphous OLED. This work provides a prototype of highly-efficient crystalline OLEDs, making crystalline OLEDs one of the choices to achieve electrically pumped organic lasers in the future. [ABSTRACT FROM AUTHOR]