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8 results on '"Zhang, Nan-sheng"'

3. Characterization of AZO/p-Si heterojunction prepared by DC magnetron sputtering

Author

Shen Cheng, Zhang Nan Sheng, Li Feng, Shen Ling, Zhao Lei, Yu Zheng Shan, He Bo, Zhou Cheng Yue, Xu Jing, Yin Yan Ting, and Ma Zhong Quan

Subjects
Photocurrent, Materials science, Electrical junction, business.industry, Mechanical Engineering, Analytical chemistry, Heterojunction, Sputter deposition, Condensed Matter Physics, Semiconductor, Mechanics of Materials, Saturation current, General Materials Science, business, Extrinsic semiconductor, Diode
Abstract

Al-doped ZnO (AZO) film was deposited by direct-current (DC) magnetron sputtering on p-Si (1 0 0) wafer to fabricate Al-doped n-ZnO/p-Si heterojunctions. The microstructural, optical and electrical properties of the AZO film were characterized by XRD, SEM; UV–vis spectrophotometer; four-point probe and Hall effect measurement, respectively. Results show that the AZO film is of good quality. The electrical junction properties were investigated by I–V measurement, which reveals that the heterojunction shows rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 20.1 and 1.19×10 −4 A, respectively. The value of I F / I R ( I F and I R stand for forward and reverse current, respectively) at 5 V is found to be as high as 19.7. It shows fairly good rectifying behavior, indicating formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of AZO film is good enough to transmit light into p-Si.

Published
2009

4. Realization and characterization of an SIS heterojunction

Author

He, Bo, primary, Ma, Zhong Quan, additional, Xu, Jing, additional, Zhao, Lei, additional, Zhang, Nan Sheng, additional, Li, Feng, additional, Shen, Cheng, additional, Shen, Ling, additional, Meng, Xia Jie, additional, Zhou, Cheng Yue, additional, Yu, Zheng Shan, additional, and Yin, Yan Ting, additional

Published
2009
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6. Fabrication and photoelectrical properties of a novel violet and blue enhanced SINP silicon photovoltaic device.

Author

HE BO, ZHONG QUAN MA, XU JING, ZHAO LEI, ZHANG NAN SHENG, LI FENG, SHEN CHENG, SHEN LING, MENG XIA JIE, ZHOU CHENG YUE, YU ZHENG SHAN, and YIN YAN TING

Subjects
SILICON, PHOTOVOLTAIC cells, PHOSPHORUS, SILICA, CRYSTALS, ELECTRIC potential
Abstract

A novel ITO/SiO2/np-silicon violet and blue enhanced photovoltaic device with SINP structure has been fabricated by thermal diffusion of phosphorus. The shallow junction was formed to enhance the spectral responsivity within the wavelength range of 400-600 nm. An ultrathin silicon dioxide was thermally grown at low temperature and RF sputtering of ITO antireflection coating to reduce the reflected light and enhance the sensitivity. The crystalline structure, optical and electric properties of ITO film were determined by an XRD, UV-VIS spectrophotometer, a four point probe and the Hall effect measurement, respectively. The results show that ITO film has high quality. The current-voltage (I-V ) characteristics, spectral response and responsivity of the photovoltaic device with high quantum efficiency of violet SINP and deep junction SINP structure were calculated and analyzed in detail. [ABSTRACT FROM AUTHOR]

Published
2009

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