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An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout, a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defects spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or postselection, resulting in a high signal-to-noise ratio that enables us to measure long spin coherence times. Combined with pulsed dynamical decoupling sequences in an isotopically purified host material, we report single-spin T-2 > 5 seconds, over two orders of magnitude greater than previously reported in this system. The mapping of these coherent spin states onto single charges unlocks both single-shot readout for scalable quantum nodes and opportunities for electrical readout via integration with semiconductor devices., Funding Agencies|UChicago MRSEC [NSF DMR-1420709]; Pritzker Nanofabrication Facility from the SHyNE; NSFs National Nanotechnology Coordinated Infrastructure [NSF ECCS-1542205]; AFOSRUnited States Department of DefenseAir Force Office of Scientific Research (AFOSR) [FA9550-19-1-0358]; DARPAUnited States Department of DefenseDefense Advanced Research Projects Agency (DARPA) [D18AC00015KK1932]; ONROffice of Naval Research [N00014-17-1-3026]; U.S. Department of Energy, Office of Basic Energy Sciences, Materials Science and Engineering DivisionUnited States Department of Energy (DOE); Boeing through the Chicago Quantum Exchange; JPS KAKENHI grant [21H04553, 20H00355]; Swedish Research CouncilSwedish Research CouncilEuropean Commission [20200544]; EUEuropean Commission [862721]; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [KAW 2018.0071]; University of Chicago Research Computing Center; U.S. Department of Energy Office of Science National Quantum Information Science Research CentersUnited States Department of Energy (DOE)

An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout, a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-tocharge conversion, whereby the defect’s spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or postselection, resulting in a high signal-to-noise ratio that enables us to measure long spin coherence times. Combined with pulsed dynamical decoupling sequences in an isotopically purified host material, we report single-spin T2 > 5 seconds, over two orders of magnitude greater than previously reported in this system. The mapping of these coherent spin states onto single charges unlocks both single-shot readout for scalable quantum nodes and opportunities for electrical readout via integration with semiconductor devices.

Rare-earth iron garnet thin films with perpendicular magnetic anisotropy (PMA) have recently attracted a great deal of attention for spintronic applications. Thulium iron garnet (TmIG) has been successfully grown and TmIG/Pt heterostructures have been characterized. However, TmIG is not the only rare-earth iron garnet that can be grown with PMA. We report the growth, magnetic, and spintronic properties of epitaxial terbium iron garnet (TbIG) and europium iron garnet (EuIG) thin films with PMA. Reciprocal space mapping shows the films are lattice matched to the substrate without strain relaxation, even for films up to 56 nm thick. The lattice strain and magnetostriction coefficient produce PMA in certain cases. TbIG grows on (111) gadolinium gallium garnet (GGG) with PMA due to the in-plane compressive strain, whereas TbIG on (111) substituted GGG (SGGG) is in tension and has an in-plane easy axis. EuIG grows with PMA on (100) and (111) GGG substrates, which facilitates the investigation of spintronic properties as a function of orientation. Both garnets have excess rare earth, which is believed to occupy Fe octahedral sites and in the case of TbIG is associated with an increase in the compensation temperature to 330 K, higher than the bulk value. Anomalous Hall effect (AHE) measurements of Pt/EuIG Hall crosses show that the spin mixing conductance of Pt/ (111) and (100) EuIG is similar. AHE measurements of Pt/TbIG Hall crosses reveal a sign change in the AHE amplitude at the compensation point analogous to all-metallic systems., National Science Foundation (U.S.) (Grant 1122374)