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In response to the growing need for efficient processing of temporal information, neuromorphic computing systems are placing increased emphasis on the switching dynamics of memristors. While the switching dynamics can be regulated by the properties of input signals, the ability of controlling it via electrolyte properties of a memristor is essential to further enrich the switching states and improve data processing capability. This study presents the synthesis of mesoporous silica (mSiO 2 ) films using a sol-gel process, which enables the creation of films with controllable porosities. These films can serve as electrolyte layers in the diffusive memristors and lead to tunable neuromorphic switching dynamics. The mSiO 2 memristors demonstrate short-term plasticity, which is essential for temporal signal processing. As porosity increases, discernible changes in operating currents, facilitation ratios, and relaxation times are observed. The underlying mechanism of such systematic control was investigated and attributed to the modulation of hydrogen-bonded networks within the porous structure of the silica layer, which significantly influences both anodic oxidation and ion migration processes during switching events. The result of this work presents mesoporous silica as a unique platform for precise control of neuromorphic switching dynamics in diffusive memristors.

Two-dimensional (2D) transition-metal dichalcogenides have shown great potential for energy storage applications owing to their interlayer spacing, large surface area-to-volume ratio, superior electrical properties, and chemical compatibility. Further, increasing the surface area of such materials can lead to enhanced electrical, chemical, and optical response for energy storage and generation applications. Vertical silicon nanowires (SiNWs), also known as black-Si, are an ideal substrate for 2D material growth to produce high surface-area heterostructures, owing to their ultrahigh aspect ratio. Achieving this using an industrially scalable method paves the way for next-generation energy storage devices, enabling them to enter commercialization. This work demonstrates large surface area, commercially scalable, hybrid MoS 2 /SiNW heterostructures, as confirmed by Raman spectroscopy, with high tunability of the MoS 2 layers down to the monolayer scale and conformal MoS 2 growth, parallel to the silicon nanowires, as verified by transmission electron microscopy (TEM). This has been achieved using a two-step atomic layer deposition (ALD) process, allowing MoS 2 to be grown directly onto the silicon nanowires without any damage to the substrate. The ALD cycle number accurately defines the layer number from monolayer to bulk. Introducing an ALD alumina (Al 2 O 3 ) interface at the MoS 2 /SiNW boundary results in enhanced MoS 2 quality and uniformity, demonstrated by an order of magnitude reduction in the B/A exciton photoluminescence (PL) intensity ratio to 0.3 and a reduction of the corresponding layer number. This high-quality layered growth on alumina can be utilized in applications such as for interfacial layers in high-capacity batteries or for photocathodes for water splitting. The alumina-free 100 ALD cycle heterostructures demonstrated no diminishing quality effects, lending themselves well to applications that require direct electrical contact with silicon and benefit from more layers, such as electrodes for high-capacity ion batteries., Competing Interests: The authors declare no competing financial interest., (© 2024 The Authors. Published by American Chemical Society.)

A new family of phase change material based on antimony has recently been explored for applications in near-IR tunable photonics due to its wide bandgap, manifested as broadband transparency from visible to NIR wavelengths. Here, we characterize [Formula: see text] optically and demonstrate the integration of this phase change material in a silicon nitride platform using a microring resonator that can be thermally tuned using the amorphous and crystalline states of the phase change material, achieving extinction ratios of up to 18 dB in the C-band. We extract the thermo-optic coefficient of the amorphous and crystalline states of the [Formula: see text] to be 3.4 x [Formula: see text] and 0.1 x 10[Formula: see text], respectively. Additionally, we detail the first observation of bi-directional shifting for permanent trimming of a non-volatile switch using continuous wave (CW) laser exposure ([Formula: see text] to 5.1 dBm) with a modulation in effective refractive index ranging from +5.23 x [Formula: see text] to [Formula: see text] x 10[Formula: see text]. This work experimentally verifies optical phase modifications and permanent trimming of [Formula: see text], enabling potential applications such as optically controlled memories and weights for neuromorphic architecture and high density switch matrix using a multi-layer PECVD based photonic integrated circuit., (© 2022. The Author(s).)

The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material from crystalline to amorphous. This is especially true in silicon photonics, where the high thermal conductivity of the waveguide material makes heating the PCM energy inefficient. Here, we improve the energy efficiency of the laser-induced phase transitions by inserting a layer of two-dimensional (2D) material, either MoS 2 or WS 2 , between the silica or silicon substrate and the PCM. The 2D material reduces the required laser power by at least 40% during the amorphization (RESET) process, depending on the substrate. Thermal simulations confirm that both MoS 2 and WS 2 2D layers act as a thermal barrier, which efficiently confines energy within the PCM layer. Remarkably, the thermal insulation effect of the 2D layer is equivalent to a ∼100 nm layer of SiO 2 . The high thermal boundary resistance induced by the van der Waals (vdW)-bonded layers limits the thermal diffusion through the layer interface. Hence, 2D materials with stable vdW interfaces can be used to improve the thermal efficiency of PCM-tuned Si photonic devices. Furthermore, our waveguide simulations show that the 2D layer does not affect the propagating mode in the Si waveguide; thus, this simple additional thin film produces a substantial energy efficiency improvement without degrading the optical performance of the waveguide. Our findings pave the way for energy-efficient laser-induced structural phase transitions in PCM-based reconfigurable photonic devices.

In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

The next generation of silicon-based photonic processors and neural and quantum networks need to be adaptable, reconfigurable, and programmable. Phase change technology offers proven nonvolatile electronic programmability; however, the materials used to date have shown prohibitively high optical losses, which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material Sb 2 Se 3 for ultralow-loss programmable silicon photonics. The favorable combination of large refractive index contrast and ultralow losses seen in Sb 2 Se 3 facilitates an unprecedented optical phase control exceeding 10π radians in a Mach-Zehnder interferometer. To demonstrate full control over the flow of light, we introduce nanophotonic digital patterning as a previously unexplored conceptual approach with a footprint orders of magnitude smaller than state-of-the-art interferometer meshes. Our approach enables a wealth of possibilities in high-density reconfiguration of optical functionalities on silicon chip., (Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY).)

Laser processing is a highly versatile technique for the post-synthesis treatment and modification of transition metal dichalcogenides (TMDCs). However, to date, TMDCs synthesis typically relies on large area CVD growth and lithographic post-processing for nanodevice fabrication, thus relying heavily on complex, capital intensive, vacuum-based processing environments and fabrication tools. This inflexibility necessarily restricts the development of facile, fast, very low-cost synthesis protocols. Here we show that direct, spatially selective synthesis of 2D-TMDCs devices that exhibit excellent electrical, Raman and photoluminescence properties can be realized using laser printing under ambient conditions with minimal lithographic or thermal overheads. Our simple, elegant process can be scaled via conventional laser printing approaches including spatial light modulation and digital light engines to enable mass production protocols such as roll-to-roll processing.

This paper describes a novel, semiautomated design methodology based on a genetic algorithm (GA) using freeform geometries for microelectromechanical systems (MEMS) devices. The proposed method can design MEMS devices comprising freeform geometries and optimize such MEMS devices to provide high sensitivity, large bandwidth, and large fabrication tolerances. The proposed method does not require much computation time or memory. The use of freeform geometries allows more degrees of freedom in the design process, improving the diversity and performance of MEMS devices. A MEMS accelerometer comprising a mechanical motion amplifier is presented to demonstrate the effectiveness of the design approach. Experimental results show an improvement in the product of sensitivity and bandwidth by 100% and a sensitivity improvement by 141% compared to the case of a device designed with conventional orthogonal shapes. Furthermore, excellent immunities to fabrication tolerance and parameter mismatch are achieved., Competing Interests: Conflict of interestThe authors declare that they have no conflict of interest., (© The Author(s) 2020.)

We propose a reconfigurable and non-volatile Bragg grating in the telecommunication C-band based on the combination of novel low-loss phase-change materials (specifically Ge 2 Sb 2 Se 4 Te 1 and Sb 2 S 3 ) with a silicon nitride platform. The Bragg grating is formed by arrayed cells of phase-change material, whose crystallisation fraction modifies the Bragg wavelength and extinction ratio. These devices could be used in integrated photonic circuits for optical communications applications in smart filters and Bragg mirrors and could also find use in tuneable ring resonators, Mach-Zehnder interferometers or frequency selectors for future laser on chip applications. In the case of Ge 2 Sb 2 Se 4 Te 1 , crystallisation produces a Bragg resonance shift up to ∼ 15 nm, accompanied with a large amplitude modulation (insertion loss of 22 dB). Using Sb 2 S 3 , low losses are presented in both states of the phase change material, obtaining a ∼ 7 nm red-shift in the Bragg wavelength. The gratings are evaluated for two period numbers, 100 and 200 periods. The number of periods determines the bandwidth and extinction ratio of the filters. Increasing the number of periods increases the extinction ratio and reflected power, also narrowing the bandwidth. This results in a trade-off between device size and performance. Finally, we combine both phase-change materials in a single Bragg grating to provide both frequency and amplitude modulation. A defect is introduced in the Sb 2 S 3 Bragg grating, producing a high quality factor resonance (Q ∼ 10 4 ) which can be shifted by 7 nm via crystallisation. A GSST cell is then placed in the defect which can modulate the transmission amplitude from low loss to below -16 dB.

Unlike MoS 2 ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS 2 films using this approach has been more challenging. Here, we report a method for growth of few-layer WS 2 that results in continuous and uniform films over centimetre scale. The method is based on the thermolysis of spin coated ammonium tetrathiotungstate ((NH 4 ) 2 WS 4 ) films by two-step high temperature annealing without additional sulphurization. This facile and scalable growth method solves previously encountered film uniformity issues. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to confirm the few-layer nature of WS 2 films. Raman and X-Ray photoelectron spectroscopy (XPS) revealed that the synthesized few-layer WS 2 films are highly crystalline and stoichiometric. Finally, WS 2 films as-deposited on SiO 2 /Si substrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time using this precursor to demonstrate the electronic functionality of the material and further validate the method.

The change of optical properties that some usually natural compounds or polymeric materials show upon the application of external stress is named mechanochromism. Herein, an artificial nanomechanical metasurface formed by a subwavelength nanowire array made of molybdenum disulfide, molybdenum oxide, and silicon nitride changes color upon mechanical deformation. The aforementioned deformation induces reversible changes in the optical transmission (relative transmission change of 197% at 654 nm), thus demonstrating a giant mechanochromic effect. Moreover, these types of metasurfaces can exist in two nonvolatile states presenting a difference in optical transmission of 45% at 678 nm, when they are forced to bend rapidly. The wide optical tunability that photonic nanomechanical metasurfaces, such as the one presented here, possess by design, can provide a valuable platform for mechanochromic and bistable responses across the visible and near infrared regime and form a new family of smart materials with applications in reconfigurable, multifunctional photonic filters, switches, and stress sensors., Competing Interests: The authors declare no conflict of interest., (© 2019 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim.)

Flexible thermoelectric generators (TEGs) can provide uninterrupted, green energy from body-heat, overcoming bulky battery configurations that limit the wearable-technologies market today. High-throughput production of flexible TEGs is currently dominated by printing techniques, limiting material choices and performance. This work investigates the compatibility of physical vapour deposition (PVD) techniques with a flexible commercial process, roll-to-roll (R2R), for thermoelectric applications. We demonstrate, on a flexible polyimide substrate, a sputtered Bi 2 Te 3 /GeTe TEG with Seebeck coefficient (S) of 140 μV/K per pair and output power (P) of 0.4 nW per pair for a 20 °C temperature difference. For the first time, thermoelectric properties of R2R sputtered Bi 2 Te 3 films are reported and we demonstrate the ability to tune the power factor by lowering run times, lending itself to a high-speed low-cost process. To further illustrate this high-rate PVD/R2R compatibility, we fabricate a TEG using Virtual Cathode Deposition (VCD), a novel high deposition rate PVD tool, for the first time. This Bi 2 Te 3 /Bi 0.5 Sb 1.5 Te 3 TEG exhibits S = 250 μV/K per pair and P = 0.2 nW per pair for a 20 °C temperature difference.

Field-Effect Transistor sensors (FET-sensors) have been receiving increasing attention for biomolecular sensing over the last two decades due to their potential for ultra-high sensitivity sensing, label-free operation, cost reduction and miniaturisation. Whilst the commercial application of FET-sensors in pH sensing has been realised, their commercial application in biomolecular sensing (termed BioFETs) is hindered by poor understanding of how to optimise device design for highly reproducible operation and high sensitivity. In part, these problems stem from the highly interdisciplinary nature of the problems encountered in this field, in which knowledge of biomolecular-binding kinetics, surface chemistry, electrical double layer physics and electrical engineering is required. In this work, a quantitative analysis and critical review has been performed comparing literature FET-sensor data for pH-sensing with data for sensing of biomolecular streptavidin binding to surface-bound biotin systems. The aim is to provide the first systematic, quantitative comparison of BioFET results for a single biomolecular analyte, specifically streptavidin, which is the most commonly used model protein in biosensing experiments, and often used as an initial proof-of-concept for new biosensor designs. This novel quantitative and comparative analysis of the surface potential behaviour of a range of devices demonstrated a strong contrast between the trends observed in pH-sensing and those in biomolecule-sensing. Potential explanations are discussed in detail and surface-chemistry optimisation is shown to be a vital component in sensitivity-enhancement. Factors which can influence the response, yet which have not always been fully appreciated, are explored and practical suggestions are provided on how to improve experimental design.

A low cost thin-film transistor (TFT) nanoribbon (NR) sensor has been developed for rapid real-time detection of DNA amplification using an isothermal Recombinase Polymerase Amplification (RPA) method. The semiconductor chip measures DNA amplification through a pH change, rather than via fluorescence. The utility of the method was demonstrated by amplifying CTX-M and NDM, two genes that confer bacterial resistance to cephalosporins and carbapenems, respectively. It is shown that this approach provides extremely fast and sensitive detection. It can detect <10 copies of the gene in genomic DNA extracted from E. coli or K. pneumoniae clinical isolates within a few minutes. A differential readout system was developed to minimize the effect of primer-dimer amplification on the assay. The simple device has the potential for low cost, portable and real-time nucleic acid analysis as a Point of Care device., (Copyright © 2017 The Authors. Published by Elsevier B.V. All rights reserved.)

We present a complete biosensing system that comprises a Thin Film Transistor (TFT)-based nanoribbon biosensor and a low noise, high-performance bioinstrumentation platform, capable of detecting sub-30 mpH unit changes, validated by an enzymatic biochemical reaction. The nanoribbon biosensor was fabricated top-down with an ultra-thin (15 nm) polysilicon semiconducting channel that offers excellent sensitivity to surface potential changes. The sensor is coupled to an integrated circuit (IC), which combines dual switched-capacitor integrators with high precision analog-to-digital converters (ADCs). Throughout this work, we employed both conventional pH buffer measurements as well as urea-urease enzymatic reactions for benchmarking the overall performance of the system. The measured results from the urea-urease reaction demonstrate that the system can detect urea in concentrations as low as 25 μM, which translates to a change of 27 mpH, according to our initial pH characterisation measurements. The attained accuracy and resolution of our system as well as its low-cost manufacturability, high processing speed and portability make it a competitive solution for applications requiring rapid and accurate results at remote locations; a necessity for Point-of-Care (POC) diagnostic platforms., Competing Interests: The authors declare no conflict of interest.

We describe a low cost thin-film transistor (TFT) nanoribbon sensor for detection of the inflammatory biomarker C-reactive protein (CRP) in human serum via a miniature bead-based enzyme-linked immunosorbent assay (ELISA). The TFT nanoribbon sensor measures the reaction products from the ELISA via pH changes. The bead-based ELISA decouples the protein functionalization steps from the sensor surface, increasing the signal and simplifying the assay. The ability to directly sense proteins in human serum in this way overcomes the Debye length limitation associated with nanowire and nanoribbon biosensors. Compared to classically fabricated nanowires, the TFT nanoribbon sensors are simple, extremely easy to fabricate, and should therefore be much cheaper to manufacture. TFT nanoribbon sensors, configured to measure pH, were used for quantitative detection of CRP spiked into human serum at concentrations as low as 0.2 ng/mL, which is 10 000 times lower than needed for diagnostic purposes, providing the potential for applications that require very high sensitivity.

In this work, we investigate sensor design approaches for eliminating the effects of parasitic resistance in nanowire and nanoribbon biosensors. Measurements of pH with polysilicon nanoribbon biosensors are used to demonstrate a reduction in sensitivity as the sensor length is reduced. The sensitivity (normalised conductance change) is reduced from 11% to 5.5% for a pH change from 9 to 3 as the sensing window length is reduced from 51 to 11 μm. These results are interpreted using a simple empirical model, which is also used to demonstrate how the sensitivity degradation can be alleviated by a suitable choice of sensor window length. Furthermore, a differential sensor design is proposed that eliminates the detrimental effects of parasitic resistance. Measurements on the differential sensor give a sensitivity of 15%, which is in good agreement with the predicted maximum sensitivity obtained from modeling.