159 results on '"Zegaoui, M."'
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2. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
3. Degradation of InGaN-based MQW solar cells under 405 nm laser excitation
4. High PAE high reliability AlN/GaN double heterostructure
5. Thermal management of electronic devices by composite materials integrated in silicon
6. Development Status of Millimeter Wave GaN Schottky Doublers above W-band for the Implementation of European Terahertz Sources for Astronomy and Astrophysics
7. Sources térahertz pour l'astronomie et l'astrophysique et perspectives des multiplicateurs GaN Schottky
8. Effect of dimensional parameters on the current of MSM photodetector
9. Micro-patterning of LiPON and lithium iron phosphate material deposited onto silicon nanopillars array for lithium ion solid state 3D micro-battery
10. Up to 100 Gbit/s short link using 300 GHz band Yagi-Uda antenna
11. A Novel Bondpad report process for III–V semiconductor devices using full HSQ properties
12. 300 GHz link enabled by Yagi-Uda antenna
13. Recent Progress in Dilute Nitride-antimonide Materials for Photonic and Electronic Applications
14. Photon-driven degradation processes in GaN-based optoelectronic devices
15. Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures
16. Scaling of AlN/GaN HEMT for millimeter-wave power applications
17. Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V
18. AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer
19. GaN Schottky Diode for High Power THz Generation using Multiplier Principle
20. Next generation of GaN-on-Silicon power devices
21. First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects
22. Novel heterostructures for millimeter-wave GaN devices
23. Single channel 100 Gbit/s link in the 300 GHz band
24. Degradation of InGaN-based optoelectronic devices under electrical and optical stress
25. Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices
26. High voltage GaN on si with low trapping up to 1200V
27. Electrically- and Optically-driven Degradation Processes in InGaN-based Photodetectors
28. Degradation of InGaN-based MQW photodetectors under 405 nm laser excitation
29. Carrier generation and recombination dynamics and reliability of InGaN-based photodetectors for high power densities
30. Degradation of InGaN-based solar cells under monochromatic photoexcitation
31. Nano-structured top contact with low optical polarization dependence for THz generation using photodiodes
32. Single channel l00 Gbit/s link in the 300 GHz band
33. Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications
34. C-doped AlN/GaN HEMTs for High efficiency mmW applications
35. Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 μm application.
36. Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 [mu]m application
37. Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness
38. Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band
39. Degradation processes and origin in InGaN-based high-power photodetectors.
40. High dynamic range single channel sampling of wideband RF signals using ultra‐fast nanoscale photoconductive switching
41. High frequency high breakdown voltage GaN transistors
42. Thermal management of electronic devices by composite materials integrated in silicon
43. High performance GaN on Si transistors up to 40 GHz
44. AlN/GaN-on-silicon devices for millimeter wave high power/low noise applications
45. Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications
46. Influence des paramètres dimensionnels sur le photodétecteur métal-semiconducteur-métal
47. Low damage sputterred ITO front contact layer for CIGS solar microcells
48. Innovative ultrathin barrier GaN-based heterostructure : towards higher performance transmitters and receivers up to W band
49. SiN/AlN/GaN : a promising heterostructure for millimeter wave applications
50. Sol-gel synthesis and thin films development of CuIn(Ga)S2 : an energy solar scavenging device used for wireless autonomous systems
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