284 results on '"Zavarin, E. E."'
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2. A GaN/AlGaN Resonance Bragg Structure
3. Critical Disorder in InGaN/GaN Resonant Bragg Structures
4. Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells
5. The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE
6. Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
7. Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure
8. Insulating GaN Epilayers Co-Doped with Iron and Carbon
9. Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
10. The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
11. Variations in the degree of order of GaN epilayer mosaic structure after Si doping
12. SEM investigations of individual extended defects in GaN epilayers
13. Photoluminescence mapping of GaN epilayers with different degrees of order of mosaic structure
14. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
15. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
16. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
17. Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure.
18. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
19. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
20. Elastic strains and delocalized optical phonons in AlN/GaN superlattices
21. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
22. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
23. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
24. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
25. Critical spatial disorder in InGaN resonant Bragg structures
26. MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range
27. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
28. MOVPE of III-N LED structures with short technological process
29. Optical lattices of excitons in InGaN/GaN quantum well systems
30. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
31. Determination of hole diffusion length in n-GaN
32. Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data
33. Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
34. Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
35. X-ray diffraction study of short-period AlN/GaN superlattices
36. Resonance Bragg structure with double InGaN quantum wells
37. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
38. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
39. InGaN/GaN heterostructures grown by submonolayer deposition
40. Monolithic white LEDs: Approaches, technology, design
41. Specific features of gallium nitride selective epitaxy in round windows
42. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
43. Study of tunneling transport of carriers in structures with an InGaN/GaN active region
44. Formation of composite InGaN/GaN/InAlN quantum dots
45. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
46. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
47. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
48. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
49. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
50. Indium-rich island structures formed by in-situ nanomasking technology
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