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The crystal structure and shape of the CdS quantum dots (QDs) obtained by the Langmuir-Blodgett method were studied by transmission electron microscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), and ultraviolet spectroscopy. X-ray photoelectron spectroscopy (XPS) and stationary photoluminescence spectroscopy (PL) methods were used to determine the dominant surface defects. Initially synthesized QDs within the Langmuir-Blodgett film of fatty behenic acid have a cubic structure and oblate spheroid shape, while free-standing QDs obtained after the matrix evaporation have a wurtzite structure and sphere-like shape. QDs within the matrix demonstrate a wide PL band centered at 2.3 eV corresponding to defect-assisted radiative recombination; after the matrix annealing and passivation of the QD surface in an ammonia atmosphere, the PL spectrum demonstrates a high-intensity band-edge peak together with a low-intensity defect-assisted shoulder. It was established that sulfur (VS) vacancies are the dominating defects. A model of simultaneous band-edge and defect-assisted recombination through the VS level was proposed.

The absorption, photoluminescence, and photoluminescence excitation spectra of CdS nanocrystals formed by the Langmuir–Blodgett method are explored. Features of the absorption and photoluminescence excitation spectra defined by optical transitions in the matrix and nanocrystals are identified. The efficiency of electronic excitation transfer from an organic matrix to nanocrystals is studied. It is shown that charge carriers efficiently transfer from the matrix to electron and hole size-quantization levels in nanocrystals and to acceptor defect levels in the band gap of nanocrystals. A large Stokes shift defined by fine exciton structure (bright and dark excitons) is observed. The shift is in the range 140–220 meV for nanocrystals 2.4 and 2.0 nm in radius.

SOI CMOS FETs have an order of magnitude lower than leakage currents, compared to the transistors on bulk silicon due to the lower defects density in the space charge region (SCR) of p-n junctions. The use of SOI structures for DC-DC convertors improves their energy efficiency by reducing generation-recombination leakage currents. The weak experimental dependence of leakage currents on drain voltages is explained by a strong SCR defects localization.

Cadmium sulfide (CdS) nanoparticles have been obtained by chemical precipitation onto the surface of single-crystalline silicon from an aqueous solution of ammonia, cadmium chloride (CdCl2), and thiourea, as well as from water–DMSO and water–DMF mixtures with the same concentrations of the reagents. According to data of atomic force microscopy, the samples obtained from the aqueous solution consist of individual nanoparticles and agglomerates thereof with sizes of no larger than 1 µm. Materials obtained from the water–organic mixtures are distinguished by the aggregation of CdS nanoparticles into threadlike chains. The length of the formed curved chains and the size of CdS nanoparticles composing them depend on the nature and amount of an organic component of a mixture. Atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy data have shown that the average size of CdS nanoparticles is 2–2.5 nm depending on solvent composition.

The photoluminescence kinetics in CdS nanocrystals produced by the Langmuir-Blodgett technique is studied at a temperature of 5 K. The photoluminescence kinetics is described by the sum of two exponential functions, with characteristic times of about 30 and 160 ns. It is found that the fast and slow decay times become longer, as the nanocrystal size increases. Analysis of the data shows that the fast decay time is controlled by trion recombination in nanocrystals with defects, whereas the slow decay time is controlled by the annihilation of optically inactive excitons in nanocrystals without defects. It is established that, as the nanocrystal size is decreased, the fraction of imperfect nanocrystals is reduced because of an increase in the energy of defect formation.

Photoluminescence (PL) properties of CdS nanoparticles were studied depending on spacing between the nanoparticles and carbon nanotube (CNT) surface. Using a chemical bath deposition procedure the nanoparticles were grown directly on CNT arrays or arrays covered by a polystyrene layer. The polymer thickness was changed by varying the polystyrene concentration in a solution and the duration of CNT immersing. Transmission electron microscopy and atomic force microscopy were used for estimation of CdS nanoparticle size. An increase in the separation between CdS and CNTs was found to enhance the PL intensity and contribute to the exciton lifetime. PL spectra of CdS nanoparticles grown on a CNT surface and polystyrene layer coating the CNTs.

Stationary and transient photoluminescence of CdS quantum dots deposited on silicon substrates and carbon nanotubes is investigated. The photoluminescence spectrum of quantum dots on a silicon substrate is dominated by a band originating from electron transitions between the quantum-confinement levels in the dots. When the quantum dots are deposited on carbon nanotubes, the intensity of this band decreases significantly. Furthermore, the kinetics of the photoluminescence decay becomes faster, which brings evidence of an additional channel for the quantum-dot deexcitation. The analysis of the experimental data demonstrates that the Forster energy transfer from CdS quantum dots to carbon nanotubes is most probably responsible for this channel. The efficiency of this process exceeds 60%.